JPH01115875A - Production of aluminum nitride sintered form - Google Patents
Production of aluminum nitride sintered formInfo
- Publication number
- JPH01115875A JPH01115875A JP62271716A JP27171687A JPH01115875A JP H01115875 A JPH01115875 A JP H01115875A JP 62271716 A JP62271716 A JP 62271716A JP 27171687 A JP27171687 A JP 27171687A JP H01115875 A JPH01115875 A JP H01115875A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- followed
- aln
- oxidative atmosphere
- nitride sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000010304 firing Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 abstract description 9
- 239000000843 powder Substances 0.000 abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 238000001354 calcination Methods 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 230000001955 cumulated effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 238000005262 decarbonization Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001272 pressureless sintering Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は高熱伝導率の窒化アルミニウム焼結体を均質で
かつ安価に製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing a sintered aluminum nitride body having high thermal conductivity homogeneously and at low cost.
［従来の技術］
エレクトロニクスの技術の急激な発達は、半導体デバイ
スの小型化のみならず、高出力化、高集積度化をも同時
に可能なものとしてきている。また、単一の基板上に、
半導体デバイスの高密度な実装方法も研究されている。[Background Art] The rapid development of electronics technology has made it possible not only to miniaturize semiconductor devices, but also to simultaneously increase output power and integration. Also, on a single board,
High-density packaging methods for semiconductor devices are also being researched.
これらの例は、パワーダイオード、パワートランジスタ
、半導体レーザー、また、ＬＳＩざらにＶＬＳＩなどで
ある。Examples of these include power diodes, power transistors, semiconductor lasers, and LSIs and VLSIs.
高出力化、高集積度化、あるいは、高密度実装化する半
導体デバイスは、単位面積、単位体積当りの発熱量が大
きくなるという問題をもたらす。現在のところ、半導体
デバイスから発生する熱は、熱伝導性の良い、ダイヤモ
ンド、立方晶窒化ホウ素、酸化ベリリウム、絶縁性炭化
ケイ素などを、ヒートシンクやパッケージ材料の一部と
して用いて、散逸させる方法がとられている。しかし、
上記の良熱伝導性材料には、安全性、製造に要するコス
ト、生産の絶対量などの観点から見た場合、必ずしも十
分とは言えない。2. Description of the Related Art Semiconductor devices that have higher output, higher integration, or higher density packaging bring about the problem that the amount of heat generated per unit area or unit volume increases. Currently, the heat generated by semiconductor devices can be dissipated by using materials with good thermal conductivity such as diamond, cubic boron nitride, beryllium oxide, or insulating silicon carbide as part of the heat sink or packaging material. It is taken. but,
The above-mentioned materials with good thermal conductivity are not necessarily sufficient from the viewpoint of safety, cost required for manufacturing, absolute amount of production, etc.
発熱量の大きい半導体デバイスの実用化に対して、低コ
ストで供給量の大きな、高熱伝導性材料が必要となって
きている。For the practical application of semiconductor devices that generate a large amount of heat, there is a need for high thermal conductivity materials that are low cost and available in large quantities.
このような要求に対して、窒化アルミニウム焼結体が提
案され、注目されている。In response to these demands, aluminum nitride sintered bodies have been proposed and are attracting attention.
［発明が解決しようとする問題点］
窒化アルミニウムの薄板焼結体を製造する場合、通常窒
素雰囲気にて常圧焼結が行われているが、成形時の不均
一、焼結時の不均一によって、反り、うねりが発生し、
焼結体を矯正することが行われている。（例えば、特開
昭６１−１５８８８１号公報参照）しかしながら、この
方法はコスト而で問題があった。[Problems to be solved by the invention] When producing a thin plate sintered body of aluminum nitride, pressureless sintering is usually performed in a nitrogen atmosphere, but unevenness during forming and nonuniformity during sintering occur. This causes warping and waviness,
The sintered body is being straightened. (For example, see Japanese Unexamined Patent Publication No. 158881/1981.) However, this method has a problem in terms of cost.
［問題点を解決するための手段］
本発明は上記問題点を解決すべくなされたもので、窒化
アルミニウム成形体を１４００〜１６５０℃の非酸化雰
囲気で加熱した後、２０ｋｇ／ｃａ＋ ２以下の荷重下
で１６５０〜２２００℃の非酸化雰囲気で焼成緻密化す
ることを特徴とする窒化アルミニウム焼結体の製造方法
である。[Means for Solving the Problems] The present invention has been made to solve the above problems, and after heating an aluminum nitride molded body in a non-oxidizing atmosphere at 1400 to 1650°C, a load of 20 kg/ca+2 or less is applied. This is a method for producing an aluminum nitride sintered body, characterized in that the aluminum nitride sintered body is densified by firing in a non-oxidizing atmosphere at 1650 to 2200°C.
すなわち、本発明は焼結を２段に分けて行うものであり
、第１段焼結は公知の方法で得た窒化アルミニウム成形
体を敷板上で非酸化雰囲気した１４００〜１６５０℃で
加熱して、高熱伝導性を得るのに必要な脱酸素、脱炭素
を行う。この第１段焼結時に加圧を行うと、脱酸素、脱
炭素が不十分となるため、１枚毎に敷板に置いた状態で
加熱処理を行う。又、第２段階の２０ｋｇ／ｃｍ ’以
下の荷重下で１６５０〜２２００℃の非酸化雰囲気で焼
結する。この場合、１段目焼結体の間に窒化ホウ素粉等
セラミックス粉末をはさみ、何層か重ね、最上段に荷重
を加えて焼結することが可能である。荷重としては２０
に、ｇ／ｃｍ ’以下程度で十分に目的を達することが
できる。これによって、焼結時の変形（前記反り、うね
り）を防ぎ、また１段目焼結体の変形を矯正することが
できる。That is, in the present invention, sintering is performed in two stages, and the first stage sintering is performed by heating an aluminum nitride molded body obtained by a known method on a bed plate at 1400 to 1650 °C in a non-oxidizing atmosphere. , performs the deoxidation and decarbonization necessary to obtain high thermal conductivity. If pressure is applied during this first stage sintering, deoxidation and decarbonization will be insufficient, so heat treatment is performed one by one while being placed on a bed plate. Further, in the second stage, sintering is performed in a non-oxidizing atmosphere at 1650 to 2200°C under a load of 20 kg/cm' or less. In this case, it is possible to sandwich ceramic powder such as boron nitride powder between the first stage sintered bodies, stack them in several layers, and apply a load to the top stage for sintering. The load is 20
However, the purpose can be sufficiently achieved with a value of about g/cm' or less. This makes it possible to prevent deformation during sintering (the above-mentioned warpage and waviness) and to correct deformation of the first stage sintered body.
本発明の窒化アルミニウム焼結体は、窒化アルミニウム
を主成分とし、焼結助剤として、■ａ族、Ｈａ族元素化
合物を含むもので、公知の組成を用いることが可能であ
る。The aluminum nitride sintered body of the present invention has aluminum nitride as a main component and contains a compound of an a-group element or an Ha-group element as a sintering aid, and a known composition can be used.
また、原料窒化アルミニウム粉は微粉でかつ高純度のも
のが望ましいが、市販のものを用いることが可能である
。Furthermore, it is desirable that the raw material aluminum nitride powder be fine and highly pure, but commercially available powder can be used.
成形体はプレス成形品、シート成形品等あらゆる成形法
によって得たものでよい。The molded product may be one obtained by any molding method such as a press molded product or a sheet molded product.
［実施例］
窒化アルミニウム粉末（平均粒径０．５μ、酸素量１．
５％）３に酸化イツトリウム粉末を１．０１１Ｉ量パー
セント加え、成形助剤としてパラフィンを用い、加圧成
形し、θ４Ｘ １）４Ｘ Ｏ，８の成形体を得た。脱脂
後ＡＩＮ焼結体上におき、第１表に示す条件の窒素気流
中で加熱した。[Example] Aluminum nitride powder (average particle size 0.5μ, oxygen content 1.
Yttrium oxide powder was added in an amount of 1.011I percent to 5%) 3, and the mixture was pressure-molded using paraffin as a molding aid to obtain a molded body of θ4X 1)4X O,8. After degreasing, it was placed on an AIN sintered body and heated in a nitrogen stream under the conditions shown in Table 1.
得られた熱処理品をＢＮスプレーでＢＮ粉を塗布し、１
０枚積層した後、ＡＩＮ製の支持台をのせ、加圧しなが
ら第１表に示す条件で焼成した。得られた焼結体の特性
も第１表に併記する。The obtained heat-treated product was coated with BN powder using BN spray, and 1
After laminating 0 sheets, a support made of AIN was placed on it, and it was fired under pressure under the conditions shown in Table 1. The properties of the obtained sintered body are also listed in Table 1.
第１表
［発明の効果］
本発明によれば高熱伝導で変形の少ない優れた特性の窒
化アルミニウム焼結体が得られ、しかもそれは極めて効
率よく得られる。Table 1 [Effects of the Invention] According to the present invention, an aluminum nitride sintered body with excellent properties such as high thermal conductivity and little deformation can be obtained, and it can be obtained extremely efficiently.
特許出願人 住友電気工業株式会社 代理人 弁理士 小 松 秀 岳Patent applicant: Sumitomo Electric Industries, Ltd. Agent Patent Attorney Hidetake Komatsu
Claims (2)
の非酸化雰囲気で加熱した後、２０ｋｇ／ｃｍ＾２以下
の荷重下で１６５０〜２２００℃の非酸化雰囲気で焼成
緻密化することを特徴とする窒化アルミニウム焼結体の
製造方法。(1) Aluminum nitride molded body at 1400-1650℃
A method for producing an aluminum nitride sintered body, which comprises heating the aluminum nitride sintered body in a non-oxidizing atmosphere, and then firing and densifying it in a non-oxidizing atmosphere at 1650 to 2200°C under a load of 20 kg/cm^2 or less.
て行う特許請求の範囲第（１）項記載の窒化アルミニウ
ム焼結体の製造方法。(2) A method for producing an aluminum nitride sintered body according to claim (1), in which the firing is performed by stacking aluminum nitride molded bodies in several stages.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62271716A JPH01115875A (en) | 1987-10-29 | 1987-10-29 | Production of aluminum nitride sintered form |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62271716A JPH01115875A (en) | 1987-10-29 | 1987-10-29 | Production of aluminum nitride sintered form |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01115875A true JPH01115875A (en) | 1989-05-09 |
Family
ID=17503844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62271716A Pending JPH01115875A (en) | 1987-10-29 | 1987-10-29 | Production of aluminum nitride sintered form |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01115875A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294578A (en) * | 1988-05-20 | 1989-11-28 | Denki Kagaku Kogyo Kk | Production of aluminum nitride sintered material |
| JPH0238369A (en) * | 1988-07-27 | 1990-02-07 | Denki Kagaku Kogyo Kk | Production of sintered material of aluminum nitride |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151684A (en) * | 1986-12-16 | 1988-06-24 | 株式会社トクヤマ | Manufacture of sintered body |
| JPS63242974A (en) * | 1987-03-31 | 1988-10-07 | 株式会社東芝 | Manufacture of aluminum nitride board |
-
1987
- 1987-10-29 JP JP62271716A patent/JPH01115875A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63151684A (en) * | 1986-12-16 | 1988-06-24 | 株式会社トクヤマ | Manufacture of sintered body |
| JPS63242974A (en) * | 1987-03-31 | 1988-10-07 | 株式会社東芝 | Manufacture of aluminum nitride board |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294578A (en) * | 1988-05-20 | 1989-11-28 | Denki Kagaku Kogyo Kk | Production of aluminum nitride sintered material |
| JPH0238369A (en) * | 1988-07-27 | 1990-02-07 | Denki Kagaku Kogyo Kk | Production of sintered material of aluminum nitride |
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