JPH01106477A - Sic blue color light emitting diode - Google Patents
Sic blue color light emitting diodeInfo
- Publication number
- JPH01106477A JPH01106477A JP62264384A JP26438487A JPH01106477A JP H01106477 A JPH01106477 A JP H01106477A JP 62264384 A JP62264384 A JP 62264384A JP 26438487 A JP26438487 A JP 26438487A JP H01106477 A JPH01106477 A JP H01106477A
- Authority
- JP
- Japan
- Prior art keywords
- type
- sic
- substrate
- sic layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 abstract description 10
- 238000005530 etching Methods 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 229910018125 Al-Si Inorganic materials 0.000 abstract 1
- 229910018520 Al—Si Inorganic materials 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は５ｔＣ（シリコンカーバイト）発色発光ダイオ
ードに関する。DETAILED DESCRIPTION OF THE INVENTION (a) Industrial Application Field The present invention relates to a 5tC (silicon carbide) color emitting diode.
（ロ）従来の技術
ＳＩＣはバンドギャップが太き（、Ｐｎ間両伝導形得ら
れることから青色発光ダイオード用材料として注目を浴
びてきた。(b) Conventional SIC has attracted attention as a material for blue light emitting diodes because it has a wide bandgap (and Pn-to-Pn biconductivity type can be obtained).
ｓ ｔ ｃｇ色発光ダイオードの発光層はり、 Ｈｏｆ
ｔｍａｎｎらの報告（Ｊｏｕｒｎａｌ Ａｐｐｌｉｅｄ
Ｐｈｙｓｉｃｓ ５３α（１，６９６２，（１９１３
２））から、カソードルミネッセンスを用いた測定でｎ
側エピタキシャル成長層で発光していることが知らｎて
いる。また、Ｇ１１ｎｔｈｅｒ ｚｉｅｇｌｅｒらの
報告（ＩＥＥＩｉ： Ｔｒａｎｓ、Ｅｌｅｃｔｒｏｎ
Ｄａｖｉｃｅｇ、ＥＤ−３０，２７７（１９８３））よ
フ、アルミニクムドーグｐ形ＳＩＧとアンドーグｎ形Ｓ
ＩＣを比較すると、アルミニクムドープｐ形８１Ｃの方
がかな〕透過率が低いことが知らｎている。s t cg color light emitting diode light emitting layer beam, Hof
A report by tmann et al. (Journal Applied
Physics 53α (1,6962, (1913
2)), n is measured using cathodoluminescence.
It is known that light is emitted from the side epitaxial growth layer. In addition, a report by G11nther ziegler et al. (IEEEi: Trans, Electron
Daviseg, ED-30, 277 (1983)) Aluminum Dogue p-type SIG and Andog n-type S
When comparing ICs, it is known that aluminum-doped p-type 81C has lower transmittance.
更に、古賀らの報告（応用電子物性分科会 研究ことが
知らｎている。Furthermore, a report by Koga et al. (Applied Electronic Materials Subcommittee Research) is known.
こｎらの点から、ＳｉＣ實色発色発光ダイオード装置て
は、第４因に示す如くｎ型６Ｈ−ＳｉＣ基板（１）の−
主面に窒素がドープさｎ九ｎ型６Ｈ−ＳｉＣ層（２）と
アルミニクムがドープさｎ＆ｐ型６Ｈ−５ｔＣ層（３）
とを順次形成してなるＳｉＣ背色発色発光ダイオード）
の上記ｐ型６Ｈ−８１Ｃ層（３）肯を銀ペースト（５１
等を介して反射器（６）等に固着し、基板（Ｉｊｆｌよ
り光を取出す構成のものが考えらｎる。From these points, as shown in the fourth factor, in the SiC color-emitting diode device, the n-type 6H-SiC substrate (1)
Nitrogen doped n9n type 6H-SiC layer (2) and aluminum doped n&p type 6H-5tC layer (3) on main surface
(SiC colored light-emitting diode formed by sequentially forming
The above p-type 6H-81C layer (3) is coated with silver paste (51
A configuration in which the light is fixed to a reflector (6) or the like through a substrate (Ijfl) or the like and extracts light from the substrate (Ijfl) can be considered.
尚、図中（７）は基板（１）の他主面の周縁に形成さｎ
たオーミック性の第１［［、（８１はｐ盤６Ｈ，８１α
層（３）表面に形成さｎたオーミック性の第２電極であ
る。Note that (7) in the figure is formed at the periphery of the other main surface of the substrate (1).
The first ohmic property [[, (81 is p board 6H, 81α
This is an ohmic second electrode formed on the surface of layer (3).
斯る装置では第５図に示す如くｐ型６Ｈ−ＳｉＣ基板（
１１１上ＫＰ型６Ｈ−８ｌｃｍ（１３とｎ型６Ｈ−８Ｉ
Ｇ層αＪとｔ−順次ａｉ層してなる５ｌ（４色発光ダイ
オードα瘤の上記基板（１１）側を銀ペース）（ｌシ等
を介して反射器（ｔｅ等に固着し、ｎ型６Ｈ−ＳｉＣ層
と
α３側より光を取出す構成点た装置に較べて光透過率が
低いｐ型頭域を薄くできるので光取出効率が１１向上す
る。尚、第５図中、αηはｐ型６Ｈ−８ＩＧ゛層Ｑ３１
の表面周縁に形成さｎたオーミック性のＭ１電極、αδ
は基板（１１１裏面に形成さｎたオーミック性の第２電
極である。In such a device, a p-type 6H-SiC substrate (
111 upper KP type 6H-8lcm (13 and n type 6H-8I
5L consisting of G layer αJ and t-sequential AI layer (silver paste on the substrate (11) side of the four-color light emitting diode α bump) (fixed to reflector (TE etc. through l sheet etc., n-type 6H - Compared to a device that extracts light from the SiC layer and the α3 side, the p-type head region with low light transmittance can be made thinner, so the light extraction efficiency is improved by 11. In Fig. 5, αη is the p-type 6H -8IG layer Q31
An ohmic M1 electrode formed on the surface periphery of αδ
is an ohmic second electrode formed on the back surface of the substrate (111).
し９ 発明が解決しようとする問題煮
熱るに、基板をｎ型６Ｈ−８ＩＧで構成してなるＳＩＣ
青色発光ダイオード（４）においても夾用上光分な光取
出効率が得らｎてなく、光取出効率の更に高いものが望
まれている。9 The problem that the invention seeks to solve is the SIC whose substrate is composed of n-type 6H-8IG.
Even in the blue light emitting diode (4), a sufficient light extraction efficiency has not been obtained, and a device with even higher light extraction efficiency is desired.
に）問題点を解決するための手段
本発明は斯る点に鑑みてなさｎたもので、その構成的特
徴は、ｎ型４Ｈ−８ＩＧ基板上にｎ型６Ｈ−８ＩＧ層及
びｐ盤６ Ｈ−８Ｉ ＣＩｎ１に７＠久積層したことに
ある。B) Means for Solving the Problems The present invention has been made in view of the above points, and its structural features include an n-type 6H-8IG layer and a p-type 6H-8IG layer on an n-type 4H-8IG substrate. -8I This is due to the fact that 7@k layers were added to CIn1.
（Ｊ＃作用
４Ｈ−ＳｉＣの光透過率（図中、矢線Ａ）とキャリアａ
度が３ＸＩＯ／ｍのｎ型６Ｈ−ＳｉＣＯ光透過率（図中
、５Ｊ！腺Ｂ）とを測定した結果を示す。(J# action 4H-SiC light transmittance (arrow A in the figure) and carrier a
The results of measuring the light transmittance of n-type 6H-SiCO with a degree of 3XIO/m (5J! gland B in the figure) are shown.
第３図よル明らかな如＜、”型４Ｈ−ＳｉＣは斯るＳＩ
Ｃより低濃度のｎ型６ Ｈ−８ｉ Ｃに較べて波長４６
０ｎｍ程度の青色光に対する透過率が高い。尚、図示し
ていないがキャリア濃度が３Ｘ１０１７／／ｄのｐ型４
Ｈ−ＳｉＣの光透過率は上記ｎ型６Ｈ−３ＩＧより低い
。As is clear from Figure 3, "type 4H-SiC is such an SI
Wavelength 46 compared to n-type 6 H-8i C, which has a lower concentration than C.
High transmittance for blue light of about 0 nm. Although not shown, a p-type 4 with a carrier concentration of 3X1017//d
The light transmittance of H-SiC is lower than that of the n-type 6H-3IG.
（へ）夾施例
第１図（ａ）〜（１］は本発明のＳＩＣ青色発光ダイオ
ードの與遣方法を示す工程別断面図である。(F) Additional Embodiments FIGS. 1(a) to 1(1) are cross-sectional views showing each step of the method for providing the SIC blue light emitting diode of the present invention.
第１図（４Ｌ）は第１工程を示し、ｎ型４Ｈ−８ｉＧ基
板Ｑｖ上に窒素がドープさｎたｎ型６Ｈ−ＳｉＣ１！■
及びアルミニクムがドーグさ２’したＰ型６Ｈ。FIG. 1 (4L) shows the first step, in which an n-type 4H-8iG substrate Qv is doped with nitrogen (n-type 6H-SiC1!). ■
and P-type 6H with aluminum dogged 2'.
ＳＩＣ層＠を順次成長させる。尚、斯る成長は周知のＣ
ＶＤ法等によシ行なう。SIC layers are grown sequentially. Incidentally, such growth is the well-known C.
This is done using the VD method, etc.
第１図中】は第２工程を示し、ｐ型６Ｈ−８ＩＧ層のの
表面及び側面と基板ＣＩＤ及びｎ型６Ｈ−８，１電層四
備面に膜厚２５ＧＯＡの熱酸化５１０２展ｃ！４Ｊｔ−
形成する。尚、斯るＳ ｌ ０２ ＨＱ４０ｆｆｅＫ（
ｒｉ湿潤な酸素がｓｏｏｓｃｃＭの割合で供給さｎる１
０００℃の高温雰囲気中に１２０分間、上記成長ｊ−の
のが形成され九基板１２］Ｊ１に床持することによ〕行
なえる。1 shows the second step, in which a film thickness of 25 GOA is thermally oxidized on the surface and side surfaces of the p-type 6H-8 IG layer, the substrate CID, and the four surfaces of the n-type 6H-8,1 conductive layer. 4Jt-
Form. In addition, such S l 02 HQ40ffeK (
ri Moist oxygen is supplied at a rate of soosccM n1
The above growth can be carried out by holding the substrate 12 on the substrate 12] for 120 minutes in a high temperature atmosphere of 000 DEG C.
第１図（０）は第３工程を示し、ｐ型６Ｈ−８ＩＧ層の
表面の８１へ膜＋２４１をホトリソグラフィ技術を用い
て部分的に除去し、紙面垂直方向に延在する開口ｃ５ｔ
−形成する。FIG. 1(0) shows the third step, in which the film +241 is partially removed from 81 on the surface of the p-type 6H-8IG layer using photolithography, and an opening c5t extending in the direction perpendicular to the paper surface is formed.
- form.
Ｎ１図（山はＭ４工程を示し、上記８１０２展圓をエラ
をングマスクとしてｐ型６Ｈ−３ｉＣ４ｉ＠、 表面よ
〕基板ｒ２ｖに達する溝＠ヲエッをングにょシ形成する
。斯るエツチングは基板ｃ？１ｌｔ−ｉｏｏｏｔ：に床
持した状態でＡｒガス２１８ＬＭ、Ｃ／ｚガ、ｃ１７０
ＳＣＣＭ、Ｏｚガ、ｘｔ−１４ｓｃｃＭずっ基板表面に
供給することにより行なえる。Diagram N1 (The mountain indicates the M4 process, using the 8102 expansion circle as an etching mask, etching the grooves reaching the substrate r2v from the p-type 6H-3iC4i@ surface) to the substrate r2v. 1lt-iooot: Ar gas 218LM, C/z gas, c170
This can be done by supplying SCCM, Oz, and xt-14sccM to the surface of the substrate.
第１図（ｅ）はＭ５工程を示し、Ｓ ｉ ０２ ＨＩＩ
Ｃ＃ｔｍ去する。FIG. 1(e) shows the M5 process, S i 02 HII
C#tm leave.
第１図（！］は第６エ程を示し、ｐｌＪ１６Ｈ−ＳｉＣ
層の表面及び側面、ｎ型６Ｈ−８ＩＧ層の及び基板ＱＤ
側面と溝（至）円面に膜厚６００λの熱酸化Ｓｔ０２
＠＠を形成する。尚、斯る５ｌｏ２膜（至）の形成は乾
燥酸素が５００８ＣＣＭの割合で供給さｎる１１００℃
の高温雰囲気中に５時間、ｊＩ！１図（４３３に示す基
板金床持することにより行なえる。Figure 1 (!) shows the 6th process, plJ16H-SiC
Surface and side surfaces of the layer, n-type 6H-8IG layer and substrate QD
Thermal oxidation St02 with a film thickness of 600λ on the side surface and groove (to) circular surface
Form @@. The formation of such a 5LO2 film was carried out at 1100°C while dry oxygen was supplied at a rate of 5008 CCM.
jI! for 5 hours in a high temperature atmosphere. This can be done by holding the substrate anvil shown in Figure 1 (433).
８１図（２）は第７エ程を示し、溝＠により分離さｎた
ｐ型６Ｈ−ＳｉＣ層（ハ）の表面に夫々位置する５ｌＯ
ｚ膜（２）をホトシソグラフィ技ｖｒＩを用いて部分的
に除去し、紙面垂直方向に延在する開口ｗ’を形成する
。Figure 81 (2) shows the seventh step, in which the 5lO
The Z film (2) is partially removed using photolithography technique vrI to form an opening w' extending in the direction perpendicular to the plane of the paper.
第１図（勾はＭ８工程を示し、上記開口（至）により露
出したｐ型６Ｈ−８ｉ ｃ層の表面及び基板ｃ！！ｌ凰
面に夫ｈＡ、ｌニー８１及びＮ１−Ｃｒ−Ａｕからなる
オーミック性のＭ１１第２１を極（２）閃ヲ形成する。FIG. 1 (The slope shows the M8 process, and the surface of the p-type 6H-8i C layer exposed by the above opening (to) and the bottom surface of the substrate are covered with a layer of aluminum, aluminum 81, and N1-Cr-Au. The ohmic M11 21 forms a pole (2) flash.
尚、上記第２電価（７）は開口（至）直下には形成さｎ
ない。Note that the second electric charge (7) is not formed directly below the opening (to).
do not have.
第１図（１）は最終工程を示し、溝のに浴りて基板（２
ＩＩｔ″分割することによ、１ｊ）ＳＩＣ青色発光ダイ
オード３Ｉ）が完成する。Figure 1 (1) shows the final process, in which the substrate (2
By dividing IIt'', 1j) SIC blue light emitting diode 3I) is completed.
第２図は上記工程によシ作成さｎたＳＩＣ背色青色光ダ
イオード６υのｐ型ＳＩＣ層（２３１側を銀ペースト８
３ｔ″介して反射器−に固層した構成を示す。Figure 2 shows a p-type SIC layer (231 side with silver paste 8
The configuration is shown in which the structure is fixed to the reflector through 3t''.
第２図のような装置では、ｎ型６Ｈ−８ＩＧ層ｏとｐ型
ｓ Ｈ−８１ｃｍｃｎトｏ接合近傍テ生じた青色光の大
部分は、Ｉｉ ［Ｉ２Ｄ ｔ−介して外部に取出さｎる
こととなるが、上記基板Ｑｖがｎ型４Ｈ−３ＩＧで構成
さｎているため、第４図及び第５図に示した従来装置に
較べて光取出効率は５０％以上向上した。また、不夾施
例の発光ダイオードｒ３１）のｎ型６Ｈ−３ＩＧ層のと
ｐ型６Ｈ−８ＩＧ層（ハ）との側面は５ＩＯｚ＆１＠で
被わｎているため、第２図に示す如く、ｐ型６Ｈ−３１
ＣＪ＠（ハ）側をボンディングした場合でありても銀ペ
ース）Ｃ３１の這い上ルにより生じる上記両肩＋２２１
Ωの短絡は生じない。In the device shown in Fig. 2, most of the blue light generated near the junction between the n-type 6H-8IG layer o and the p-type sH-81cmcn is taken out to the outside via Ii[I2Dt-. However, since the substrate Qv is composed of n-type 4H-3IG, the light extraction efficiency is improved by more than 50% compared to the conventional device shown in FIGS. 4 and 5. In addition, since the side surfaces of the n-type 6H-3IG layer and the p-type 6H-8IG layer (c) of the light emitting diode r31) of the non-containing example are covered with 5IOz&1@, as shown in FIG. p-type 6H-31
Even if the CJ @ (C) side is bonded, the above two shoulders +221 caused by the creeping of C31 (silver pace)
No short circuit of Ω occurs.
怪】発明の効果
本発明によｎば、従来に比して光取出効率が大なるＳＩ
Ｃ青色発光ダイオードを提供できる。[Suspicious] Effects of the Invention According to the present invention, the SI has a higher light extraction efficiency than the conventional one.
C blue light emitting diode can be provided.
第１図（〜〜（幻は不発明の５ｉｃｙ色発光ダイオード
の製造工程を示す工程別断面図、第２図は第１図に示し
た工程によ９作成さルたＳＩＣ青色発光ダイオードを反
射器に組込んだ構成を示す断面図、Ｍ３図は光透過率を
示す特注図、第４図及び第５図は従来例を示す断面図で
ある。Figure 1 is a cross-sectional view showing the manufacturing process of an uninvented 5icy color light emitting diode, Figure 2 is a reflective SIC blue light emitting diode manufactured by the process shown in Figure 1. FIG. 4 and FIG. 5 are cross-sectional views showing a conventional example. Figure M3 is a custom-made view showing light transmittance.
Claims (1)
びＰ型６Ｈ−ＳｉＣ層を順次積層したことを特徴とする
ＳｉＣ青色発光ダイオード。(1) An SiC blue light emitting diode characterized in that an n-type 6H-SiC layer and a P-type 6H-SiC layer are sequentially laminated on an n-type 4H-SiC substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26438487A JPH0797660B2 (en) | 1987-10-20 | 1987-10-20 | SiC blue light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26438487A JPH0797660B2 (en) | 1987-10-20 | 1987-10-20 | SiC blue light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01106477A true JPH01106477A (en) | 1989-04-24 |
| JPH0797660B2 JPH0797660B2 (en) | 1995-10-18 |
Family
ID=17402405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26438487A Expired - Lifetime JPH0797660B2 (en) | 1987-10-20 | 1987-10-20 | SiC blue light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0797660B2 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0546052U (en) * | 1991-11-19 | 1993-06-18 | 三洋電機株式会社 | Light emitting diode device |
| JPH05175239A (en) * | 1991-06-14 | 1993-07-13 | Cree Res Inc | High power and high frequency metal-semiconductor field-effect transistor |
| US5481318A (en) * | 1990-03-27 | 1996-01-02 | Ferguson Limited | Television receiver with additional display of characters |
| US6686616B1 (en) | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
| US6902964B2 (en) | 2001-10-24 | 2005-06-07 | Cree, Inc. | Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
| US6956239B2 (en) | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
| KR100548860B1 (en) * | 1997-07-16 | 2006-03-23 | 산요덴키가부시키가이샤 | N type nitride semiconductor electrode, semiconductor device having the electrode, and manufacturing method thereof |
| US7265399B2 (en) | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
| US7348612B2 (en) | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
| US7402844B2 (en) | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
| US7646043B2 (en) | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
| US8203185B2 (en) | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
-
1987
- 1987-10-20 JP JP26438487A patent/JPH0797660B2/en not_active Expired - Lifetime
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5481318A (en) * | 1990-03-27 | 1996-01-02 | Ferguson Limited | Television receiver with additional display of characters |
| JPH05175239A (en) * | 1991-06-14 | 1993-07-13 | Cree Res Inc | High power and high frequency metal-semiconductor field-effect transistor |
| JPH0546052U (en) * | 1991-11-19 | 1993-06-18 | 三洋電機株式会社 | Light emitting diode device |
| KR100548860B1 (en) * | 1997-07-16 | 2006-03-23 | 산요덴키가부시키가이샤 | N type nitride semiconductor electrode, semiconductor device having the electrode, and manufacturing method thereof |
| US6686616B1 (en) | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
| US7067361B2 (en) | 2000-05-10 | 2006-06-27 | Cree, Inc. | Methods of fabricating silicon carbide metal-semiconductor field effect transistors |
| US6902964B2 (en) | 2001-10-24 | 2005-06-07 | Cree, Inc. | Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
| US6906350B2 (en) | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
| US6956239B2 (en) | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
| US7297580B2 (en) | 2002-11-26 | 2007-11-20 | Cree, Inc. | Methods of fabricating transistors having buried p-type layers beneath the source region |
| US7265399B2 (en) | 2004-10-29 | 2007-09-04 | Cree, Inc. | Asymetric layout structures for transistors and methods of fabricating the same |
| US7348612B2 (en) | 2004-10-29 | 2008-03-25 | Cree, Inc. | Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same |
| US8203185B2 (en) | 2005-06-21 | 2012-06-19 | Cree, Inc. | Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods |
| US7402844B2 (en) | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
| US7646043B2 (en) | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
| US7943972B2 (en) | 2006-09-28 | 2011-05-17 | Cree, Inc. | Methods of fabricating transistors having buried P-type layers coupled to the gate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0797660B2 (en) | 1995-10-18 |
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