JPH01103628A - Preparation of curable polymer - Google Patents
Preparation of curable polymerInfo
- Publication number
- JPH01103628A JPH01103628A JP25951687A JP25951687A JPH01103628A JP H01103628 A JPH01103628 A JP H01103628A JP 25951687 A JP25951687 A JP 25951687A JP 25951687 A JP25951687 A JP 25951687A JP H01103628 A JPH01103628 A JP H01103628A
- Authority
- JP
- Japan
- Prior art keywords
- curable polymer
- coating
- dianhydride
- film
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 12
- 239000007787 solid Substances 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000009477 glass transition Effects 0.000 abstract description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 abstract 1
- OLFJKJDFWDYOBW-UHFFFAOYSA-N 7-trimethoxysilyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound CO[Si](OC)(OC)C1=CCCC2C(=O)OC(=O)C12 OLFJKJDFWDYOBW-UHFFFAOYSA-N 0.000 abstract 1
- 238000000576 coating method Methods 0.000 description 39
- 239000011248 coating agent Substances 0.000 description 38
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 20
- 239000000758 substrate Substances 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000002904 solvent Substances 0.000 description 13
- 239000007788 liquid Substances 0.000 description 12
- 150000003377 silicon compounds Chemical class 0.000 description 10
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 8
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 239000004793 Polystyrene Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920002223 polystyrene Polymers 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- -1 alicyclic diamines Chemical class 0.000 description 4
- 150000008064 anhydrides Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- LZXCSTVSBHSDFY-UHFFFAOYSA-N 4-trimethoxysilyl-2-benzofuran-1,3-dione Chemical compound CO[Si](OC)(OC)C1=CC=CC2=C1C(=O)OC2=O LZXCSTVSBHSDFY-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- SQNZJJAZBFDUTD-UHFFFAOYSA-N durene Chemical compound CC1=CC(C)=C(C)C=C1C SQNZJJAZBFDUTD-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- YLHUPYSUKYAIBW-UHFFFAOYSA-N 1-acetylpyrrolidin-2-one Chemical compound CC(=O)N1CCCC1=O YLHUPYSUKYAIBW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- OLQWMCSSZKNOLQ-UHFFFAOYSA-N 3-(2,5-dioxooxolan-3-yl)oxolane-2,5-dione Chemical compound O=C1OC(=O)CC1C1C(=O)OC(=O)C1 OLQWMCSSZKNOLQ-UHFFFAOYSA-N 0.000 description 1
- ICNFHJVPAJKPHW-UHFFFAOYSA-N 4,4'-Thiodianiline Chemical compound C1=CC(N)=CC=C1SC1=CC=C(N)C=C1 ICNFHJVPAJKPHW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- IBOFVQJTBBUKMU-UHFFFAOYSA-N 4,4'-methylene-bis-(2-chloroaniline) Chemical compound C1=C(Cl)C(N)=CC=C1CC1=CC=C(N)C(Cl)=C1 IBOFVQJTBBUKMU-UHFFFAOYSA-N 0.000 description 1
- HSBOCPVKJMBWTF-UHFFFAOYSA-N 4-[1-(4-aminophenyl)ethyl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)C1=CC=C(N)C=C1 HSBOCPVKJMBWTF-UHFFFAOYSA-N 0.000 description 1
- KIFDSGGWDIVQGN-UHFFFAOYSA-N 4-[9-(4-aminophenyl)fluoren-9-yl]aniline Chemical compound C1=CC(N)=CC=C1C1(C=2C=CC(N)=CC=2)C2=CC=CC=C2C2=CC=CC=C21 KIFDSGGWDIVQGN-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- QHAFFSRNBIQYRM-UHFFFAOYSA-N 5-dimethoxysilyl-4-methyl-2-benzofuran-1,3-dione Chemical compound CC1=C2C(C(=O)OC2=O)=CC=C1[SiH](OC)OC QHAFFSRNBIQYRM-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000006501 nitrophenyl group Chemical group 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical compound OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、硬化性重合体の製造方法に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for producing a curable polymer.
従来、電子機器分野における保護膜材料、絶縁膜材料な
どとして耐熱性の優れたポリイミドが知られている。ポ
リイミドをこれらの材料として使用する場合には、ポリ
イミドの前駆体であるポリアミド酸の溶液を基体に塗布
して加熱処理を施すことによりイミド化反応を生起させ
、ポリイミドとする方法が利用される。しかしながら、
このようにして得られるポリイミドは、基体がシリコン
やガラスよりなる場合においては、基体との密着性が不
充分であることなどの問題点を有する。Conventionally, polyimide with excellent heat resistance has been known as a protective film material, an insulating film material, etc. in the field of electronic devices. When polyimide is used as these materials, a method is used in which a solution of polyamic acid, which is a precursor of polyimide, is applied to a substrate and heat treated to cause an imidization reaction to form polyimide. however,
The polyimide thus obtained has problems such as insufficient adhesion to the substrate when the substrate is made of silicon or glass.
そこで、最近、基体との密着性の優れた硬化膜を形成す
ることができるポリイミド系樹脂前駆体とシリル基金を
テトラヒドロ無水フタル酸とを混合してなる組成物が開
示された(特開昭61−293258号公報参照)。Therefore, recently, a composition has been disclosed which is made by mixing a polyimide resin precursor, a silyl foundation, and tetrahydrophthalic anhydride, which can form a cured film with excellent adhesion to a substrate (Japanese Patent Laid-Open No. 61 -293258).
しかしながら、この組成物は、粘度が高く、塗膜の形成
において塗工性が悪いという問題点がある。However, this composition has the problem of high viscosity and poor coating properties in forming a coating film.
これに対して、塗工性を向上させるために溶剤を加えて
粘度を低くすることが考えられるが、この場合には固形
分濃度が底下するため、塗膜の硬化後において表面の平
坦化性が悪くなるという問題点が発生する。On the other hand, it is possible to lower the viscosity by adding a solvent to improve coating properties, but in this case, the solid content concentration will drop to the bottom, making it difficult to flatten the surface after the coating film has hardened. A problem arises in that the condition deteriorates.
また、該ポリイミド系樹脂前駆体組成物によって得られ
る硬化膜はガラス転移温度が低く、高温での使用に支障
があり、硬度も不十分であるという問題点がある。さら
に、該組成物の溶液は加熱処理による硬化により着色す
るという問題点を存する。In addition, the cured film obtained from the polyimide resin precursor composition has a low glass transition temperature, making it difficult to use at high temperatures, and has insufficient hardness. Furthermore, there is a problem in that the solution of the composition becomes colored when cured by heat treatment.
本発明は以上の問題点に基いてなされたものであって、
その目的は、低粘度で固形分濃度が高くても優れた塗工
性を有すると共に、着色せずに透明性、基体との密着性
、平坦化性および硬度の優れたガラス転移温度の高い硬
化膜を形成することができる硬化性重合体の製造方法を
提供することにある。The present invention has been made based on the above problems, and
The objective is to have low viscosity and excellent coating properties even at high solids concentrations, as well as high glass transition temperature curing with excellent transparency, adhesion to substrates, flattening properties, and hardness without coloring. An object of the present invention is to provide a method for producing a curable polymer capable of forming a film.
本発明は、ジアミノ化合物と、加水分解性基を有するケ
イ素原子を含有したジカルボン酸無水物とを反応させて
硬化性重合体を製造することを特徴とする。The present invention is characterized in that a curable polymer is produced by reacting a diamino compound with a silicon atom-containing dicarboxylic acid anhydride having a hydrolyzable group.
以下、本発明を具体的に説明する。The present invention will be explained in detail below.
本発明においては、ジアミノ化合物を必要に応じて溶剤
に溶解または懸濁し、これに前記加水分解性基を有する
ケイ素原子を含有したジカルボン酸無水物すなわち特定
のケイ素化合物を添加して反応させて硬化性重合体を得
る。In the present invention, the diamino compound is dissolved or suspended in a solvent as required, and a silicon atom-containing dicarboxylic acid anhydride having the hydrolyzable group, that is, a specific silicon compound, is added thereto, and the diamino compound is reacted and cured. to obtain a polymer.
本発明において用いられるジアミノ化合物としては、例
えばパラフェニレンジアミン、メタフェニレンジアミン
、4.4’−ジアミノジフェニルメタン、4.4’−ジ
アミノジフェニルエタン、ベンチジン、4.4’−ジア
ミノジフェニルスルフィド、4.4’−ジアミノジフエ
ニルスルホン、4.4’−ジアミノジフェニルエーテル
、1.5−ジアミノナフタレン、3.3°−ジメチル−
4,4°−ジアミノビフェニル、3゜4”−ジアミノベ
ンズアニリド、3.4’−ジアミノジフェニルエーテル
、3.3’−ジアミノベンゾフェノン、3.4”−ジア
ミノベンゾフェノン、4,4″−ジアミノベンゾフェノ
ン、1.4−ビス(4−アミノフェノキシ)ベンゼン、
1.3−ビス(4−アミノフェノキシ)ベンゼン、1.
3−ビス(3−アミノフェノキシ)ベンゼン、9.9−
ビス(4−アミノフェニル)−10−ヒドロ・−アント
ラセン、9.9−ビス(4−アミノフェニル)フルオレ
ン、4.4’ −メチレン−ビス(2−クロロアニリ
ン)、2,2°。Examples of the diamino compound used in the present invention include para-phenylene diamine, meta-phenylene diamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylethane, benzidine, 4,4'-diaminodiphenyl sulfide, 4.4 '-Diamino diphenyl sulfone, 4.4'-diaminodiphenyl ether, 1.5-diaminonaphthalene, 3.3°-dimethyl-
4,4°-diaminobiphenyl, 3°4"-diaminobenzanilide, 3.4'-diaminodiphenyl ether, 3.3'-diaminobenzophenone, 3.4"-diaminobenzophenone, 4,4"-diaminobenzophenone, 1 .4-bis(4-aminophenoxy)benzene,
1.3-bis(4-aminophenoxy)benzene, 1.
3-bis(3-aminophenoxy)benzene, 9.9-
Bis(4-aminophenyl)-10-hydro-anthracene, 9,9-bis(4-aminophenyl)fluorene, 4,4'-methylene-bis(2-chloroaniline), 2,2°.
5.5′−テトラクロロ−4,4°−ジアミノビフェニ
ル、2.2°−ジクロロ−4,4′−ジアミノ−5,5
′−ジメトキシビフェニノペ3,3゛−ジメトキシ−4
,4°−ジアミノビフェニルなどの芳香族ジアミン、メ
タキシリレンジアミン、l、3−プロパンジアミン、テ
トラメチレンジアミン、ペンタメチレンジアミン、ヘキ
サメチレンジアミン、ヘプタメチレンジアミン、オクタ
メチレンジアミン、ノナメチレンジアミン、4.4’−
ジメチルへブタメチレンジアミン、1.4−ジアミノシ
クロヘキサン、インホロンジアミン、テトラヒドロジシ
クロペンタジエニレンジアミン、ヘキサヒドロ−4,7
−メタノインダニレンシメチレンジアミン、トリシクロ
(6,2,1,O2・7〕−ランデシレンジメチルジア
ミン、1,4−ビス〈3−アミノプロピル−ジメチルシ
リル)ベンゼンなどの脂肪族および脂環族ジアミンを挙
げることができる。5.5'-tetrachloro-4,4'-diaminobiphenyl, 2.2'-dichloro-4,4'-diamino-5,5
'-dimethoxybipheninope3,3'-dimethoxy-4
, 4°-diaminobiphenyl and other aromatic diamines, metaxylylene diamine, 1,3-propanediamine, tetramethylene diamine, pentamethylene diamine, hexamethylene diamine, heptamethylene diamine, octamethylene diamine, nonamethylene diamine, 4. 4'-
Dimethyl hebutamethylene diamine, 1,4-diaminocyclohexane, inphorone diamine, tetrahydrodicyclopentadienyl diamine, hexahydro-4,7
- Aliphatic and alicyclic diamines such as methanoindanilene shimethylene diamine, tricyclo(6,2,1,O2.7]-landecylenedimethyldiamine, 1,4-bis<3-aminopropyl-dimethylsilyl)benzene can be mentioned.
さらに
CH,CH5
などで示されるジアミノオルカリシロキサンを挙げるこ
とができる。Furthermore, diaminoolkalisiloxanes represented by CH, CH5, etc. can be mentioned.
これらジアミノ化合物のうち好ましくは、4,4”−ジ
アミノフェニルエーテル、4.4°−ジアミノジフェニ
ルメタンなどの芳香族ジアミン、右よび前記ジアミノオ
ルガノシロキサンなどを挙げることができる。これらの
ジアミノ化合物は、単独でもしくは2種以上を組み合わ
せて用いることができる。Among these diamino compounds, preferable examples include aromatic diamines such as 4,4''-diaminophenyl ether and 4.4°-diaminodiphenylmethane, and the above-mentioned diaminoorganosiloxanes. It can be used alone or in combination of two or more kinds.
本発明において用いられるジアミノ化合物は、テトラカ
ルボン酸二無水物との反応により変性されている変性物
であってもよい。この変性物は、ジアミノ化合物を後記
溶剤に溶解または懸濁したものに、テトラカルボン酸二
無水物を好ましくは徐々に添加して反応させることによ
って得られる。The diamino compound used in the present invention may be a modified product modified by reaction with a tetracarboxylic dianhydride. This modified product is obtained by preferably gradually adding a tetracarboxylic dianhydride to a diamino compound dissolved or suspended in a solvent described below and reacting the diamino compound.
このようにジアミノ化合物を変性するテトラカルボン酸
二無水物としては、例えばピロメリット酸二無水物、3
,3°、4,4°−ビフェニルテトラカルボン酸二無水
物、2.2’、3.3°−ビフェニルテトラカルボン酸
二無水物、2.3.3′、4°−ビフェニルテトラカル
ボン酸二無水物、3,3°、 4.4’−ベン7’フエ
ノンテトラカルボン酸二無水物、2.3.3°、4”−
ベンゾフェノンテトラカルボン酸二無水物、2,2°。Examples of the tetracarboxylic dianhydride that modifies the diamino compound include pyromellitic dianhydride, 3
, 3°, 4,4°-biphenyltetracarboxylic dianhydride, 2.2', 3.3°-biphenyltetracarboxylic dianhydride, 2.3.3', 4°-biphenyltetracarboxylic dianhydride Anhydride, 3,3°, 4.4'-ben7'phenotetracarboxylic dianhydride, 2.3.3°, 4”-
Benzophenone tetracarboxylic dianhydride, 2,2°.
3.3°−ベンゾフェノンテトラカルボン酸二無水物、
ビス(3,4−ジカルボキシフェニル)−コーテルニ無
水物、ビス(3,4−ジカルボキシフェニル)−スルホ
ンニ無水物、1.2.5.6−ナフタレンテトラカルボ
ン酸二無水物、2.3,6.7−ナフタレンテトラカル
ボン酸二無水物などの芳香族テトラカルボン酸二無水物
、ブタンテトラカルボン酸二無水物、1.2.3.4−
シクロブタンテトラカルボン酸二無水L 1.2,3
.4−シクロペンクンテトラカルボン酸二無水物、’2
,3.5− トリカルボキシシクロペンチル酢酸二無水
物、3.5.6−)!Iカルボキシーノルボルナンー2
−酢酸二無水物、5− (2,5−ジオキソテトラヒド
ロフリル)−3−メチル−シクロヘキセンジカルボン酸
二無水物、ビシクロ(2,2,2]−オクトー7−エン
−テトラカルボン酸二無水物などの脂肪族および指環族
のテトラカルボン酸二無水物を挙げることができる。3.3°-benzophenonetetracarboxylic dianhydride,
Bis(3,4-dicarboxyphenyl)-courtelanhydride, bis(3,4-dicarboxyphenyl)-sulfonic anhydride, 1.2.5.6-naphthalenetetracarboxylic dianhydride, 2.3, 6.7-Aromatic tetracarboxylic dianhydride such as naphthalenetetracarboxylic dianhydride, butanetetracarboxylic dianhydride, 1.2.3.4-
Cyclobutanetetracarboxylic dianhydride L 1.2,3
.. 4-Cyclopenkune tetracarboxylic dianhydride, '2
, 3.5- tricarboxycyclopentyl acetic dianhydride, 3.5.6-)! I carboxynorbornane-2
-acetic dianhydride, 5-(2,5-dioxotetrahydrofuryl)-3-methyl-cyclohexenedicarboxylic dianhydride, bicyclo(2,2,2]-oct-7-ene-tetracarboxylic dianhydride Mention may be made of aliphatic and cyclic tetracarboxylic dianhydrides such as.
これらのテトラカルボン酸二無水物のうちでは、ピロメ
リット酸二無水物、3,3”、4,4°−ビフェニルテ
トラカルボン酸二無水物、2,2°、3.3”−ビフェ
ニルテトラカルボン酸二無水物、3,3°、 4.4’
−ベンゾフェノンテトラカルボン酸二無水物、1.2
゜3.4−シクロブタンテトラカルボン酸二無水物、2
.3.5−)!7カルポキシシクロペンチル酢酸二無水
物などが好ましい。Among these tetracarboxylic dianhydrides, pyromellitic dianhydride, 3,3", 4,4°-biphenyltetracarboxylic dianhydride, 2,2°, 3.3"-biphenyltetracarboxylic dianhydride, Acid dianhydride, 3,3°, 4.4'
-benzophenonetetracarboxylic dianhydride, 1.2
゜3.4-Cyclobutanetetracarboxylic dianhydride, 2
.. 3.5-)! 7-carpoxycyclopentyl acetic dianhydride and the like are preferred.
これらのテトラカルボン酸二無水物は、単独でもしくは
2種以上を組み合わせて用いることができる。These tetracarboxylic dianhydrides can be used alone or in combination of two or more.
本発明においてジアミノ化合物の変性にテトラカルボン
酸二無水物を用いる場合に、当該テトラカルボン酸二無
水物の使用割合は、ジアミノ化合物1モルに対して0.
5モル以下であることが好ましい。テトラカルボン酸二
無水物を用いることにより、得られる硬化性重合体の分
子量が高くなり基板に対する成膜性がさらに向上する。In the present invention, when a tetracarboxylic dianhydride is used for modifying a diamino compound, the proportion of the tetracarboxylic dianhydride used is 0.00% per mole of the diamino compound.
It is preferably 5 moles or less. By using tetracarboxylic dianhydride, the molecular weight of the resulting curable polymer increases, and the film formability on the substrate is further improved.
しかし、この使用割合が過大のときには、変性物をジア
ミノ化合物とすることができない。However, if this usage ratio is excessive, the modified product cannot be converted into a diamino compound.
また、テトラカルボン酸二無水物とジアミノ化合物との
反応温度は、例えば0〜80℃程度であることが好まし
い。Further, the reaction temperature between the tetracarboxylic dianhydride and the diamino compound is preferably about 0 to 80°C, for example.
本発明において用いられる特定のケイ素化合物すなわち
加水分解性基を有するケイ素原子を含有したジカルボン
酸無水物は、例えば下記−数式(I)〜−一般式I[I
)で示されるものである。The specific silicon compound used in the present invention, that is, the silicon atom-containing dicarboxylic acid anhydride having a hydrolyzable group, is, for example, the following formula (I) to general formula I [I
).
−数式(I)
〇
一般式(It)
〇
一般式(III)
上記−数式(1)〜一般式(III)において、R1お
よびR2は、それぞれ水素原子、メチル基、エチル基、
n−プロピル基、イソプロピル基、n−ブチル基、イソ
ブチル基、n−ペンチル基、イソペンチル基、ネオペン
チル基などの炭素数1〜5の脂肪族炭化水素基、フェニ
ル基、トリル基、キシリル基、ニトロフェニル基、α−
ナフチル基すどの炭素数6〜18の芳香族炭化水素基を
表し、XI、X2およびX″は、それぞれメトキシ基、
エトキシ基、プロポキシ基などの炭素数1〜5のアルコ
キシ基、またはフッ素原子、塩素原子、臭素原子などの
ハロゲン原子を表し、
Yは、炭素数2〜20の3価の脂肪族炭化水素基、脂環
族炭化水素基、芳香族炭化水素基を表す。- Formula (I) General formula (It) General formula (III) In the above formulas (1) to (III), R1 and R2 each represent a hydrogen atom, a methyl group, an ethyl group,
C1-5 aliphatic hydrocarbon groups such as n-propyl group, isopropyl group, n-butyl group, isobutyl group, n-pentyl group, isopentyl group, neopentyl group, phenyl group, tolyl group, xylyl group, nitro Phenyl group, α-
A naphthyl group represents an aromatic hydrocarbon group having 6 to 18 carbon atoms, and XI, X2 and X'' are each a methoxy group,
represents an alkoxy group having 1 to 5 carbon atoms, such as an ethoxy group or a propoxy group, or a halogen atom, such as a fluorine atom, a chlorine atom, or a bromine atom; Y is a trivalent aliphatic hydrocarbon group having 2 to 20 carbon atoms; Represents an alicyclic hydrocarbon group or an aromatic hydrocarbon group.
このような特定のケイ素化合物の具体例としては、下記
構造式で示されるものを挙げることができる。Specific examples of such specific silicon compounds include those represented by the following structural formula.
これらの特定のケイ素化合物のうち、特に好ましいもの
としては、3−トリメトキシシリル−1゜2.5.6−
チトラヒドロフタル酸無水物、3−トリメトキシシリル
フタル酸無水物、3−メチルジメトキシシリルフタル酸
無水物、3−ジメチルメトキシシリルフタル酸無水物な
どを挙げることができる。Among these specific silicon compounds, 3-trimethoxysilyl-1゜2.5.6-
Examples include titrahydrophthalic anhydride, 3-trimethoxysilyl phthalic anhydride, 3-methyldimethoxysilyl phthalic anhydride, 3-dimethylmethoxysilyl phthalic anhydride, and the like.
これらの特定のケイ素化合物は、単独でもしくは2種以
上を組み合わせて用いることができる。These specific silicon compounds can be used alone or in combination of two or more.
本発明において、前記特定のケイ素化合物の使用割合は
、ジアミノ化合物1モルに対して1〜3モルであること
が好ましい。この使用割合が1モル未満のときには、得
られる硬化性重合体の成膜性が悪くなりやすく、一方便
用割合が3モルを超えるときには、得られる硬化性重合
体の保存安定性が悪化する。In the present invention, the specific silicon compound is preferably used in an amount of 1 to 3 moles per mole of the diamino compound. When the proportion used is less than 1 mole, the film-forming properties of the resulting curable polymer tend to deteriorate, while when the proportion used exceeds 3 moles, the storage stability of the obtained curable polymer deteriorates.
本発明においては、反応時に溶剤を用いることが好まし
く、この場合の溶剤としては、反応原料および反応生成
物に対して不活性なものであれば特に限定されず、例え
ばN−メチル−2−ピロリドン、ジメチルホルムアミド
、ジメチルアセトアミド、テトラメチル尿素、ヘキサメ
チルホスホンアミド、メチルホルムアミド、N−アセチ
ル−2−ピロリドンなどのアミド系溶剤、ジメチルスル
ホキシド、ジメチルスルホンなどの含硫系溶剤、ベンゼ
ン、トルエン、キシレン、ジュレンなどの芳香族炭化水
素系溶剤、ジクロルメタン、クロロホルム、トリクレン
、クロルベンゼン、ジクロルベンゼンなどのハロゲン化
炭化水素系溶剤、メチルセロソルブ、エチルセロソルブ
、ブチルセロソルブ、メチルカルピトール、カルピトー
ル、ブチルカルピトールなどのアルコール系溶剤、メチ
ルセロソルブアセテート、エチルセロソルブアセテート
、ブチルセロソルブアセテート、メチルカルピトールア
セテート、カルピトールアセテート、ブチルカルピトー
ルアセテートなどのエステル系溶剤およびテトラヒドロ
フラン、ジエチルエーテル、グライム、ジグライム、ジ
オキサンなどのエーテル系溶剤を用いることができる。In the present invention, it is preferable to use a solvent during the reaction, and the solvent in this case is not particularly limited as long as it is inert to the reaction raw materials and reaction products, such as N-methyl-2-pyrrolidone. , dimethylformamide, dimethylacetamide, tetramethylurea, hexamethylphosphonamide, methylformamide, amide solvents such as N-acetyl-2-pyrrolidone, sulfur-containing solvents such as dimethylsulfoxide and dimethylsulfone, benzene, toluene, xylene, and durene. Aromatic hydrocarbon solvents such as dichloromethane, chloroform, tricrene, chlorobenzene, dichlorobenzene, etc., alcohols such as methyl cellosolve, ethyl cellosolve, butyl cellosolve, methyl calpitol, calpitol, butyl carpitol ester solvents such as methyl cellosolve acetate, ethyl cellosolve acetate, butyl cellosolve acetate, methyl carpitol acetate, carpitol acetate, butyl carpitol acetate, and ether solvents such as tetrahydrofuran, diethyl ether, glyme, diglyme, and dioxane. be able to.
これらの溶剤は単独でもしくは2種以上を組み合わせて
用いることができる。These solvents can be used alone or in combination of two or more.
なお、本発明において、溶剤を使用する場合の反応系の
濃度は、実用的には10〜90重量%程度である。In the present invention, when a solvent is used, the concentration of the reaction system is practically about 10 to 90% by weight.
本発明においては、ジアミノ化合物、特定のケイ素化合
物および必要に応じて用いられる溶剤は、いずれも十分
に脱水されたもの、例えばカールフィッシャー法による
水分測定で50ppm以下のものを用いることが好まし
い。脱水が不十分である場合には、反応系において特定
のケイ素化合物が加水分解するおそれがある。In the present invention, it is preferable that the diamino compound, the specific silicon compound, and the solvent used as necessary be sufficiently dehydrated, for example, those having a moisture content of 50 ppm or less as determined by the Karl Fischer method. If the dehydration is insufficient, there is a risk that a specific silicon compound may be hydrolyzed in the reaction system.
本発明において、ジアミノ化合物と、前記特定のケイ素
化合物を好ましくは80℃以下、特に好ましくは0〜6
0℃の温度で、通常、0.5〜10時間を要して滴下し
反応させる。In the present invention, the diamino compound and the specific silicon compound are preferably 80°C or lower, particularly preferably 0 to 6°C.
The reaction is carried out dropwise at a temperature of 0° C., usually for 0.5 to 10 hours.
本発明においては、必要に応じて触媒を添加してもよい
。斯かる触媒としては、例えば硫酸、塩酸、硝酸、リン
酸などの無機酸およびパラトルエンスルホン酸、ベンゼ
ンスルホン酸、トリフルオロ酢酸、トリクロロ酢酸など
の有機酸を挙げることができ、その使用割合は、通常、
特定ケイ素化合物に対して0.01〜1重量%程度であ
る。In the present invention, a catalyst may be added as necessary. Examples of such catalysts include inorganic acids such as sulfuric acid, hydrochloric acid, nitric acid, and phosphoric acid, and organic acids such as para-toluenesulfonic acid, benzenesulfonic acid, trifluoroacetic acid, and trichloroacetic acid, and the proportions used are as follows: usually,
It is about 0.01 to 1% by weight based on the specific silicon compound.
なお、これらの反応は窒素雰囲気下で行うことが好まし
い。Note that these reactions are preferably performed under a nitrogen atmosphere.
以上のようにして製造される硬化性重合体を膜形成用の
塗布液として使用する場合には、必要に応じて適宜の手
段により不純物を除去した上で反応生成液をそのまま使
用してもよいし、あるいは硬化性重合体を反応生成液か
ら分離した上で適宜の溶剤、例えば前記硬化性重合体の
製造に使用した溶剤を添加して使用してもよい。When using the curable polymer produced as described above as a coating solution for film formation, the reaction product solution may be used as it is after removing impurities by appropriate means if necessary. Alternatively, the curable polymer may be separated from the reaction product liquid and then used by adding an appropriate solvent, for example, the solvent used in the production of the curable polymer.
本発明により製造される硬化性重合体のポリスチレン換
算重量平均分子量は、通常、500〜20.000であ
り、その溶液は、高濃度においても粘度が低いという特
徴を有する。従って、本発明により製造される硬化性重
合体を用いる膜形成用の塗布液は、固形分濃度が高くて
も良好な塗工性が得られる。そして、塗布液における硬
化性重合体の濃度は、通常、10〜90重量%とされ、
その粘度は、50〜10,000cp (25℃)であ
る。The weight average molecular weight of the curable polymer produced according to the present invention in terms of polystyrene is usually 500 to 20,000, and its solution is characterized by low viscosity even at high concentrations. Therefore, a film-forming coating solution using the curable polymer produced according to the present invention can provide good coating properties even if the solid content concentration is high. The concentration of the curable polymer in the coating solution is usually 10 to 90% by weight,
Its viscosity is 50-10,000 cp (25°C).
前記塗布液を用いて塗膜を形成するための塗布方法は、
特に限定されるものではなく、例えばロール塗布、回転
塗布、スクリーン塗布、ディッピング塗布などの方法を
用いることができる。The coating method for forming a coating film using the coating liquid includes:
There are no particular limitations, and methods such as roll coating, spin coating, screen coating, and dipping coating can be used.
得られた塗膜を乾燥し硬化させるための熱処理温度は、
硬化性重合体の種類により適宜選択することができるが
、通常、100〜300℃、好ましくは150〜250
℃である。なお、乾燥後の硬化に要する時間は、通常、
10分〜5時間程度である。また、塗膜の硬化をさらに
促進させるために必要に応じて塗布液に硬化用触媒、例
えばアンモニア、トリエチルアミン、ジエチルアミン、
ピリジン、キノリン、イソキノリンなどを硬化性重合体
100重量部に対して0.01〜1重量部程歪部合して
おいてもよい。The heat treatment temperature for drying and curing the obtained coating film is
Although it can be appropriately selected depending on the type of curable polymer, it is usually 100 to 300°C, preferably 150 to 250°C.
It is ℃. Note that the time required for curing after drying is usually
It takes about 10 minutes to 5 hours. In addition, in order to further accelerate the curing of the coating film, a curing catalyst such as ammonia, triethylamine, diethylamine, etc. may be added to the coating solution as necessary.
Pyridine, quinoline, isoquinoline, etc. may be added in a strained amount of 0.01 to 1 part by weight per 100 parts by weight of the curable polymer.
なお、本発明の方法により得られる硬化性重合体は、こ
れと相溶し得る他の重合体、例えばポリアミド、ポリイ
ミド、シリコーン樹脂、エポキシ樹脂、アクリル樹脂、
ウレタン樹脂などと混合して使用することもできる。The curable polymer obtained by the method of the present invention may contain other polymers that are compatible with it, such as polyamide, polyimide, silicone resin, epoxy resin, acrylic resin,
It can also be used in combination with urethane resin or the like.
本発明の方法により製造される硬化性重合体は、ガラス
基板、カラーフィルター基板、シリコン基板、セラミッ
クス基板、銅、アルミニウム、鉄などよりなる基板に、
例えば膜厚1mm程度まで塗布することが可能である。The curable polymer produced by the method of the present invention can be applied to substrates made of glass substrates, color filter substrates, silicon substrates, ceramic substrates, copper, aluminum, iron, etc.
For example, it is possible to coat the film up to a thickness of about 1 mm.
以下、本発明の実施例について説明するが、本発明はこ
れらの実施例に限定されるものではない。Examples of the present invention will be described below, but the present invention is not limited to these Examples.
実施例1
フラスコ内を窒素ガスで置換した後、脱水したN−メチ
ル−2−ピロリドン500gと、4,4″−ジアミノジ
フェニルエーテル100g (0,5モル)とを仕込み
、3−トリメトキシシリル−1,2,5,6−チトラヒ
ドロフタル酸無水物272g(1モル)を反応温度5〜
10℃において約30分間を要して滴下して反応させた
。その後室温まで昇温させ、さらに2時間反応させ、ポ
リスチレン換算重量平均分子量が3.000の硬化性重
合体を含む溶液を得た。Example 1 After purging the inside of the flask with nitrogen gas, 500 g of dehydrated N-methyl-2-pyrrolidone and 100 g (0.5 mol) of 4,4''-diaminodiphenyl ether were charged, and 3-trimethoxysilyl-1 , 272 g (1 mol) of 2,5,6-titrahydrophthalic anhydride at a reaction temperature of 5 to
The reaction was carried out dropwise at 10° C. over a period of about 30 minutes. Thereafter, the temperature was raised to room temperature, and the reaction was further carried out for 2 hours to obtain a solution containing a curable polymer having a polystyrene equivalent weight average molecular weight of 3.000.
この硬化性重合体溶液を孔径0.2μ真のメンブランフ
ィルタ−で濾過して塗布液を得た。これを塗布液Aとす
る。この塗布液Aの粘度は160cp (25℃)、固
形分濃度は40重量%であった。This curable polymer solution was filtered through a membrane filter with a pore size of 0.2 μm to obtain a coating solution. This is called coating liquid A. The viscosity of this coating liquid A was 160 cp (25° C.), and the solid content concentration was 40% by weight.
実施例2
実施例1において、4,4°−ジアミノジフェニルエー
テルの代わりに4.4°−ジアミノジフェニルメタン9
9 g (0,5モル)を用いたほかは同様に操作して
、ポリスチレン換算重量平均分子量が3.000の硬化
性重合体を含む溶液を得た。この硬化性重合体溶液を孔
径0.2amのメンブランフィルタ−で濾過して塗布液
を得た。これを塗布液Bとする。Example 2 In Example 1, 4,4°-diaminodiphenylmethane 9 was used instead of 4,4°-diaminodiphenyl ether.
A solution containing a curable polymer having a polystyrene equivalent weight average molecular weight of 3.000 was obtained by the same procedure except that 9 g (0.5 mol) was used. This curable polymer solution was filtered through a membrane filter with a pore size of 0.2 am to obtain a coating solution. This will be referred to as coating liquid B.
この塗布液Bの粘度は140cp (25℃)、固形分
濃度は37重量%であった。The viscosity of this coating liquid B was 140 cp (25° C.), and the solid content concentration was 37% by weight.
実施例3
実施例1において、3−トリメトキシシリル−1,2,
5,6−チトラヒドロフタル酸無水物の代わりに3−ジ
メチルメトキシシリルフタル酸無水物236 g (1
モル)を用いたほかは同様に操作して、ポリスチレン換
算重量平均分子量が5.400の硬化性重合体を含む溶
液を得た。この硬化性重合体溶液を孔径0.2μのメン
ブランフィルタ−で濾過して塗布液を得た。これを塗布
液Cとする。この塗布液Cの粘度は176cp(25℃
)、固形分濃度は38重量%であった。Example 3 In Example 1, 3-trimethoxysilyl-1,2,
236 g of 3-dimethylmethoxysilylphthalic anhydride (1
A solution containing a curable polymer having a polystyrene equivalent weight average molecular weight of 5.400 was obtained by the same procedure except that mol) was used. This curable polymer solution was filtered through a membrane filter with a pore size of 0.2 μm to obtain a coating solution. This will be referred to as coating liquid C. The viscosity of this coating liquid C was 176 cp (25°C
), and the solid content concentration was 38% by weight.
実施例4
フラスコ内を窒素ガスで置換した後、これに脱水したジ
メチルアセトアミド500gと、4.4”−ジアミノジ
フェニルエーテル50 g (0,25モル)とを仕込
み、3.3’、4.4°−ベンゾフェノンテトラカルボ
ン酸二無水物40.3 g (0,125モル)を反応
温度40〜50℃において約2時間かけて徐々に滴下し
て反応させた。その後室温まで冷却し、さらに2時間撹
拌した後、3−トリメトキシシリルフタル酸無水物67
g(0,25モル)を反応温度5〜10℃において約
30分かけて徐々に滴下して反応させた。その後室温ま
で昇温し、さらに2時間反応させ、ポリスチレン換算重
量平均分子量が15.000の硬化性重合体を含む溶液
を得た。この硬化性重合体溶液を孔径0.2μのメンブ
ランフィルタ−で濾過して塗布液を得た。これを塗布液
りとする。この塗布液りの粘度は280cp (25℃
)、固形分濃度は21重量%であった。Example 4 After purging the inside of the flask with nitrogen gas, 500 g of dehydrated dimethylacetamide and 50 g (0.25 mol) of 4.4''-diaminodiphenyl ether were charged into the flask, and 3.3', 4.4° - 40.3 g (0,125 mol) of benzophenone tetracarboxylic dianhydride was gradually added dropwise over about 2 hours at a reaction temperature of 40 to 50°C to react.Then, the mixture was cooled to room temperature and stirred for an additional 2 hours. After that, 3-trimethoxysilyl phthalic anhydride 67
g (0.25 mol) was gradually added dropwise over about 30 minutes at a reaction temperature of 5 to 10°C to react. Thereafter, the temperature was raised to room temperature, and the reaction was further carried out for 2 hours to obtain a solution containing a curable polymer having a polystyrene equivalent weight average molecular weight of 15.000. This curable polymer solution was filtered through a membrane filter with a pore size of 0.2 μm to obtain a coating solution. This is used as the coating liquid. The viscosity of this coating liquid is 280 cp (25℃
), and the solid content concentration was 21% by weight.
試験例1
以上の実施例1〜4によって得られた塗布液A〜Dの各
々を試料塗布液として用いて以下のテストを行った。Test Example 1 The following tests were conducted using each of the coating liquids A to D obtained in Examples 1 to 4 above as sample coating liquids.
〔硬化膜の形成テスト1〕
平坦なガラス基板上に、各試料塗布液をスピンコーター
により回転数1000〜5000rpmで回転塗布し、
次いで200℃で1時間熱処理を施し、それぞれ第1表
に示す膜厚の硬化膜を形成した。[Cured film formation test 1] Each sample coating solution was spin-coated onto a flat glass substrate using a spin coater at a rotation speed of 1000 to 5000 rpm.
Then, heat treatment was performed at 200° C. for 1 hour to form cured films having the thickness shown in Table 1.
これらの硬化膜について、■硬さ、■光透過性、■密着
性をそれぞれ評価した。結果を第1表に示す。評価方法
は次のとおりである。These cured films were evaluated for (1) hardness, (2) light transmittance, and (2) adhesion. The results are shown in Table 1. The evaluation method is as follows.
■硬さ 鉛筆硬度を測定して評価した。■Hardness Evaluation was performed by measuring pencil hardness.
■光透過性
可視光線吸啄スペクトルメーターを用いて、硬化塗膜の
波長400〜aoonmの可視光線に対する硬化膜の透
過率を測定して評価した。(2) Light Transmittance Using a visible light absorption spectrometer, the transmittance of the cured coating film to visible light having a wavelength of 400 to 100 nm was measured and evaluated.
■密着性
硬化膜が設けられたガラス基板を100℃の沸騰水中に
1時間浸漬した後、JISに−5400に規定される方
法に準じてゴバン目テープ剥離試験を行なって評価した
。(2) Adhesion After the glass substrate provided with the cured film was immersed in boiling water at 100° C. for 1 hour, a cross-cut tape peeling test was conducted in accordance with the method specified in JIS-5400 for evaluation.
〔硬化膜の形成テスト2〕
表面に1μの凹凸のパターンが形成されたシリコン基板
上に、各試料塗布液をスピンコーターにより回転数10
00〜5000rpmで回転塗布して塗膜を形成し、次
いで200℃で1時間熱処理を施し、硬化膜の形成テス
ト1と同様の第1表に示す膜厚(凹部)の硬化膜を形成
した。なお、凹凸のパターンにおけるスペース幅は10
0μ、ライン幅は100nである。[Cured film formation test 2] Each sample coating solution was applied to a silicon substrate with a pattern of 1 μm unevenness formed on the surface using a spin coater at a rotation speed of 10.
A coating film was formed by spin coating at 00 to 5000 rpm, and then heat treated at 200° C. for 1 hour to form a cured film having the same film thickness (recessed portions) shown in Table 1 as in Cured Film Formation Test 1. Note that the space width in the uneven pattern is 10
0μ, and the line width is 100n.
これらの硬化膜について、■平坦化性、■耐クラック性
をそれぞれ評価した。結果を第1表に併せて示す。評価
方法は次のとおりである。These cured films were evaluated for (1) flattening properties and (2) crack resistance. The results are also shown in Table 1. The evaluation method is as follows.
■平坦化性
表面粗さ計および走査型電子顕微鏡(SEM)を用いて
硬化膜の表面を観測し、下記式により定義される平坦化
率δを求めて平坦化性を評価した。(2) Flattenability The surface of the cured film was observed using a surface roughness meter and a scanning electron microscope (SEM), and the flattenability was evaluated by determining the flattening rate δ defined by the following formula.
平坦化率δ=(1−a/b) x 100 (%)(式
中、aは硬化膜における表面の段差を表し、bは凹凸の
パターンが有している段差を表す。)
■耐クラック性
硬化膜が設けられたシリコン基板を300℃の雰囲気下
に2日間放置して、該硬化膜にクラックが発生したか否
かによって評価した。Flattening rate δ = (1-a/b) x 100 (%) (In the formula, a represents the level difference on the surface of the cured film, and b represents the level difference in the uneven pattern.) ■Crack resistance The silicon substrate provided with the cured film was left in an atmosphere at 300° C. for 2 days, and evaluated based on whether or not cracks were generated in the cured film.
本発明の方法によれば、低粘度で固形分濃度が高くても
優れた塗工性を有する硬化性重合体を製造することがで
きる。従って本発明の方法により得られた硬化性重合体
を用いて塗膜を形成する場合には、平坦化性に優れた塗
膜を形成することができ、しかも加熱処理により得られ
る硬化膜はガラス転移温度が高く、耐クラツク性の優れ
たものとなり、また密着性の優れたものとなる。According to the method of the present invention, a curable polymer having low viscosity and excellent coating properties even at a high solid content concentration can be produced. Therefore, when forming a coating film using the curable polymer obtained by the method of the present invention, it is possible to form a coating film with excellent flattening properties, and the cured film obtained by heat treatment is made of glass. It has a high transition temperature, excellent crack resistance, and excellent adhesion.
また、硬化膜の硬度が高いので、機械的耐久性の優れた
膜を形成することができると共に、可視光線に対する光
透過性が大きいので、高い光透過性が要求される用途に
有利に用いることができる。In addition, since the hardness of the cured film is high, it is possible to form a film with excellent mechanical durability, and the light transmittance to visible light is high, so it can be advantageously used in applications that require high light transmittance. Can be done.
従って、本発明の方法により得られる硬化性重合体は、
ガラス基板のパッシベーション膜、液晶配向膜、半導体
の表面保護膜や平坦化膜、カラーフィルターの表面保護
膜や平坦化膜、多層配線層間絶縁膜、ガス分離膜などと
して液晶デバイス、半導体デバイスなどの電子機器分野
を始めとする種々の分野において好適に用いることがで
きる。Therefore, the curable polymer obtained by the method of the present invention is
Passivation films for glass substrates, liquid crystal alignment films, surface protection films and planarization films for semiconductors, surface protection films and planarization films for color filters, multilayer wiring interlayer insulation films, gas separation films, etc. for electronic applications such as liquid crystal devices and semiconductor devices. It can be suitably used in various fields including the equipment field.
Claims (1)
子を含有したジカルボン酸無水物とを反応させることを
特徴とする硬化性重合体の製造方法。1) A method for producing a curable polymer, which comprises reacting a diamino compound with a silicon atom-containing dicarboxylic acid anhydride having a hydrolyzable group.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25951687A JPH01103628A (en) | 1987-10-16 | 1987-10-16 | Preparation of curable polymer |
US07/247,449 US4923948A (en) | 1987-09-24 | 1988-09-22 | Curable composition |
EP88308913A EP0310320B1 (en) | 1987-09-24 | 1988-09-26 | Curable composition |
DE3852597T DE3852597T2 (en) | 1987-09-24 | 1988-09-26 | Curable composition. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25951687A JPH01103628A (en) | 1987-10-16 | 1987-10-16 | Preparation of curable polymer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01103628A true JPH01103628A (en) | 1989-04-20 |
Family
ID=17335187
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25951687A Pending JPH01103628A (en) | 1987-09-24 | 1987-10-16 | Preparation of curable polymer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01103628A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009185213A (en) * | 2008-02-07 | 2009-08-20 | Chisso Corp | Thermosetting composition |
JP2012140640A (en) * | 2012-04-26 | 2012-07-26 | Jnc Corp | Thermosetting composition |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5033295A (en) * | 1973-06-07 | 1975-03-31 | ||
JPS5033294A (en) * | 1973-06-07 | 1975-03-31 | ||
JPS56157428A (en) * | 1980-05-10 | 1981-12-04 | Nitto Electric Ind Co Ltd | Preparation of polyimide precursor |
JPS58118825A (en) * | 1982-01-09 | 1983-07-15 | Nitto Electric Ind Co Ltd | Production of polyimide precursor |
-
1987
- 1987-10-16 JP JP25951687A patent/JPH01103628A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5033295A (en) * | 1973-06-07 | 1975-03-31 | ||
JPS5033294A (en) * | 1973-06-07 | 1975-03-31 | ||
JPS56157428A (en) * | 1980-05-10 | 1981-12-04 | Nitto Electric Ind Co Ltd | Preparation of polyimide precursor |
JPS58118825A (en) * | 1982-01-09 | 1983-07-15 | Nitto Electric Ind Co Ltd | Production of polyimide precursor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009185213A (en) * | 2008-02-07 | 2009-08-20 | Chisso Corp | Thermosetting composition |
JP2012140640A (en) * | 2012-04-26 | 2012-07-26 | Jnc Corp | Thermosetting composition |
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