JPH01101519A - Active matrix substrate - Google Patents

Active matrix substrate

Info

Publication number
JPH01101519A
JPH01101519A JP25885487A JP25885487A JPH01101519A JP H01101519 A JPH01101519 A JP H01101519A JP 25885487 A JP25885487 A JP 25885487A JP 25885487 A JP25885487 A JP 25885487A JP H01101519 A JPH01101519 A JP H01101519A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wiring
formed
source
source wiring
gate wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25885487A
Other versions
JPH0812354B2 (en )
Inventor
Hideto Ishiguro
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To obtain a large and highly reliable active matrix substrate by forming a bridged wiring formed by the same material as a picture element electrode simultaneously with the formation of the picture element electrode so as to couple a partial source wiring formed by the same material as a gate wiring simultaneously with the formation of the gate wiring.
CONSTITUTION: After forming a channel area 505, a source area 506, a drain area 507 in a thin film transistor, the thin film is formed as a prescribed shape by using a low resistance material consisting of various kinds of alloys and superconductive substances and not source wiring is formed on the intersecting part of the gate wiring 501 and a source wiring 502. Then, an insulating film for insulating the source wiring 502 and the gate wiring 501 is formed and a contact hole 508 is formed like a prescribed shape. Then, an ITO film is formed as a prescribed shape and a bridged wiring 503 for bridging the source wiring 502 is obtained in a picture element transparent electrode 504 and the intersecting part of the gate wiring 501 and the source wiring 502.
COPYRIGHT: (C)1989,JPO&Japio
JP25885487A 1987-10-14 1987-10-14 The method for manufacturing an active matrix substrate Expired - Lifetime JPH0812354B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25885487A JPH0812354B2 (en) 1987-10-14 1987-10-14 The method for manufacturing an active matrix substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25885487A JPH0812354B2 (en) 1987-10-14 1987-10-14 The method for manufacturing an active matrix substrate

Publications (2)

Publication Number Publication Date
JPH01101519A true true JPH01101519A (en) 1989-04-19
JPH0812354B2 JPH0812354B2 (en) 1996-02-07

Family

ID=17325959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25885487A Expired - Lifetime JPH0812354B2 (en) 1987-10-14 1987-10-14 The method for manufacturing an active matrix substrate

Country Status (1)

Country Link
JP (1) JPH0812354B2 (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001018774A1 (en) * 1999-09-08 2001-03-15 Matsushita Electric Industrial Co., Ltd. Electric circuit board, tft array substrate using the same, and liquid crystal display
JP2001318624A (en) * 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd Display device and manufacturing method therefor
EP1447786A1 (en) * 2001-11-21 2004-08-18 Seiko Epson Corporation Active matrix substrate, electro-optical apparatus, and electronic device
US7560732B2 (en) 2000-04-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7567328B2 (en) 2000-01-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Liquid-crystal display device and method of fabricating the same
US7612753B2 (en) 2000-02-29 2009-11-03 Semiconductor Energy Energy Laboratory Co., Ltd. Display device and method for fabricating the same
US7633471B2 (en) 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
US7804552B2 (en) 2000-05-12 2010-09-28 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with light shielding portion comprising laminated colored layers, electrical equipment having the same, portable telephone having the same
JP2010217926A (en) * 2000-01-26 2010-09-30 Semiconductor Energy Lab Co Ltd The liquid crystal display device
US8138500B2 (en) 2008-03-31 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2014016631A (en) * 2013-09-05 2014-01-30 Semiconductor Energy Lab Co Ltd Semiconductor device, module, and electronic apparatus
JP2014067057A (en) * 2000-02-22 2014-04-17 Semiconductor Energy Lab Co Ltd Display device
JP2014123137A (en) * 2000-08-14 2014-07-03 Semiconductor Energy Lab Co Ltd Display device
JP2015011341A (en) * 2013-06-28 2015-01-19 エルジー ディスプレイ カンパニー リミテッド Array substrate for liquid crystal display device and method of manufacturing the same
JP2015014799A (en) * 2014-08-25 2015-01-22 株式会社半導体エネルギー研究所 Display device, module, and electronic apparatus
US9059216B2 (en) 2000-12-11 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US9231044B2 (en) 2000-12-21 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
JP2017072838A (en) * 2016-10-27 2017-04-13 株式会社半導体エネルギー研究所 Display device
US9704996B2 (en) 2000-04-12 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189080U (en) * 1984-05-28 1985-12-14

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189080U (en) * 1984-05-28 1985-12-14

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001018774A1 (en) * 1999-09-08 2001-03-15 Matsushita Electric Industrial Co., Ltd. Electric circuit board, tft array substrate using the same, and liquid crystal display
EP1220187A1 (en) * 1999-09-08 2002-07-03 Matsushita Electric Industrial Co., Ltd. Electric circuit board, tft array substrate using the same, and liquid crystal display
US6885110B1 (en) 1999-09-08 2005-04-26 Matsushita Electric Industrial Co., Ltd. Electrical circuit board and TFT array substrate and liquid crystal display device utilizing the same
EP1220187A4 (en) * 1999-09-08 2005-05-18 Matsushita Electric Ind Co Ltd Electric circuit board, tft array substrate using the same, and liquid crystal display
US7567328B2 (en) 2000-01-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Liquid-crystal display device and method of fabricating the same
JP2010217926A (en) * 2000-01-26 2010-09-30 Semiconductor Energy Lab Co Ltd The liquid crystal display device
US8017456B2 (en) 2000-01-26 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2014067057A (en) * 2000-02-22 2014-04-17 Semiconductor Energy Lab Co Ltd Display device
US9318610B2 (en) 2000-02-22 2016-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9869907B2 (en) 2000-02-22 2018-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP2014146806A (en) * 2000-02-29 2014-08-14 Semiconductor Energy Lab Co Ltd The light-emitting device
US7612753B2 (en) 2000-02-29 2009-11-03 Semiconductor Energy Energy Laboratory Co., Ltd. Display device and method for fabricating the same
JP2015135508A (en) * 2000-02-29 2015-07-27 株式会社半導体エネルギー研究所 The light-emitting device
JP2012190030A (en) * 2000-02-29 2012-10-04 Semiconductor Energy Lab Co Ltd Light-emitting device, semiconductor device, display module, and electric apparatus
JP2001318624A (en) * 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd Display device and manufacturing method therefor
JP2012190031A (en) * 2000-02-29 2012-10-04 Semiconductor Energy Lab Co Ltd Display device
JP2016066619A (en) * 2000-02-29 2016-04-28 株式会社半導体エネルギー研究所 Light-emitting device
US9704996B2 (en) 2000-04-12 2017-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7560732B2 (en) 2000-04-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US9419026B2 (en) 2000-04-27 2016-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP2016106243A (en) * 2000-04-27 2016-06-16 株式会社半導体エネルギー研究所 Display device
JP2017161911A (en) * 2000-04-27 2017-09-14 株式会社半導体エネルギー研究所 Display device
US7781770B2 (en) 2000-04-27 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US9780124B2 (en) 2000-04-27 2017-10-03 Semiconductor Energy Laboratory Co., Ltd. Display device including pixel comprising first transistor second transistor and light-emitting element
JP2017049592A (en) * 2000-04-27 2017-03-09 株式会社半導体エネルギー研究所 Display
US7633471B2 (en) 2000-05-12 2009-12-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electric appliance
US7804552B2 (en) 2000-05-12 2010-09-28 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device with light shielding portion comprising laminated colored layers, electrical equipment having the same, portable telephone having the same
JP2014123137A (en) * 2000-08-14 2014-07-03 Semiconductor Energy Lab Co Ltd Display device
US9666601B2 (en) 2000-12-11 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US9059216B2 (en) 2000-12-11 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and manufacturing method thereof
US9231044B2 (en) 2000-12-21 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US9793335B2 (en) 2000-12-21 2017-10-17 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7483001B2 (en) 2001-11-21 2009-01-27 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
EP1447786A4 (en) * 2001-11-21 2008-04-02 Seiko Epson Corp Active matrix substrate, electro-optical apparatus, and electronic device
US8294637B2 (en) 2001-11-21 2012-10-23 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
US7982692B2 (en) 2001-11-21 2011-07-19 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
EP1447786A1 (en) * 2001-11-21 2004-08-18 Seiko Epson Corporation Active matrix substrate, electro-optical apparatus, and electronic device
US8525760B2 (en) 2001-11-21 2013-09-03 Seiko Epson Corporation Active matrix substrate, electro-optical device, and electronic device
US8519398B2 (en) 2008-03-31 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Display device
US8138500B2 (en) 2008-03-31 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2015011341A (en) * 2013-06-28 2015-01-19 エルジー ディスプレイ カンパニー リミテッド Array substrate for liquid crystal display device and method of manufacturing the same
JP2014016631A (en) * 2013-09-05 2014-01-30 Semiconductor Energy Lab Co Ltd Semiconductor device, module, and electronic apparatus
JP2015014799A (en) * 2014-08-25 2015-01-22 株式会社半導体エネルギー研究所 Display device, module, and electronic apparatus
JP2017072838A (en) * 2016-10-27 2017-04-13 株式会社半導体エネルギー研究所 Display device

Also Published As

Publication number Publication date Type
JPH0812354B2 (en) 1996-02-07 grant

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