JP7829726B2 - 半導体試験装置、半導体試験方法および半導体装置の製造方法 - Google Patents

半導体試験装置、半導体試験方法および半導体装置の製造方法

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Publication number
JP7829726B2
JP7829726B2 JP2024558685A JP2024558685A JP7829726B2 JP 7829726 B2 JP7829726 B2 JP 7829726B2 JP 2024558685 A JP2024558685 A JP 2024558685A JP 2024558685 A JP2024558685 A JP 2024558685A JP 7829726 B2 JP7829726 B2 JP 7829726B2
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Japan
Prior art keywords
semiconductor
electrode
constant current
electrodes
semiconductor elements
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JP2024558685A
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English (en)
Japanese (ja)
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JPWO2024106052A5 (https=
JPWO2024106052A1 (https=
Inventor
学 中西
和起 上野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP2024558685A 2022-11-17 2023-10-04 半導体試験装置、半導体試験方法および半導体装置の製造方法 Active JP7829726B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022183962 2022-11-17
JP2022183962 2022-11-17
PCT/JP2023/036242 WO2024106052A1 (ja) 2022-11-17 2023-10-04 半導体試験装置、半導体試験方法および半導体装置の製造方法

Publications (3)

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JPWO2024106052A1 JPWO2024106052A1 (https=) 2024-05-23
JPWO2024106052A5 JPWO2024106052A5 (https=) 2025-07-18
JP7829726B2 true JP7829726B2 (ja) 2026-03-13

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JP2024558685A Active JP7829726B2 (ja) 2022-11-17 2023-10-04 半導体試験装置、半導体試験方法および半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JP7829726B2 (https=)
CN (1) CN120188268A (https=)
WO (1) WO2024106052A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020173197A (ja) 2019-04-12 2020-10-22 株式会社クオルテック 半導体試験装置および半導体素子の試験方法。
WO2022074952A1 (ja) 2020-10-05 2022-04-14 三菱電機株式会社 半導体試験装置および半導体試験方法
JP2022143992A (ja) 2021-03-18 2022-10-03 三菱電機株式会社 半導体試験装置および半導体試験方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6765125B2 (ja) * 2017-09-27 2020-10-07 日本電産リード株式会社 抵抗測定装置、基板検査装置、及び抵抗測定方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020173197A (ja) 2019-04-12 2020-10-22 株式会社クオルテック 半導体試験装置および半導体素子の試験方法。
WO2022074952A1 (ja) 2020-10-05 2022-04-14 三菱電機株式会社 半導体試験装置および半導体試験方法
JP2022143992A (ja) 2021-03-18 2022-10-03 三菱電機株式会社 半導体試験装置および半導体試験方法

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Publication number Publication date
CN120188268A (zh) 2025-06-20
WO2024106052A1 (ja) 2024-05-23
JPWO2024106052A1 (https=) 2024-05-23

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