JP7754920B2 - ケイ素－ゲルマニウム材料の選択的エッチングのための組成物、その使用及び方法 - Google Patents

ケイ素－ゲルマニウム材料の選択的エッチングのための組成物、その使用及び方法

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Publication number
JP7754920B2
JP7754920B2 JP2023513264A JP2023513264A JP7754920B2 JP 7754920 B2 JP7754920 B2 JP 7754920B2 JP 2023513264 A JP2023513264 A JP 2023513264A JP 2023513264 A JP2023513264 A JP 2023513264A JP 7754920 B2 JP7754920 B2 JP 7754920B2
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Japan
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composition
silicon
group
acid
layer
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JP2023513264A
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English (en)
Japanese (ja)
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JP2023539238A5 (https=
JP2023539238A (ja
JPWO2022043165A5 (https=
Inventor
ヴィラネヴァ，フランシスコ ハヴィエル ロペス
クリップ，アンドレアス
フリシュート，ザビーネ
フイ ロー，チー
チン シェン，メイ
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BASF SE
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BASF SE
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Publication of JP2023539238A publication Critical patent/JP2023539238A/ja
Publication of JP2023539238A5 publication Critical patent/JP2023539238A5/ja
Publication of JPWO2022043165A5 publication Critical patent/JPWO2022043165A5/ja
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Publication of JP7754920B2 publication Critical patent/JP7754920B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP2023513264A 2020-08-24 2021-08-18 ケイ素－ゲルマニウム材料の選択的エッチングのための組成物、その使用及び方法 Active JP7754920B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP20192464.4 2020-08-24
EP20192464 2020-08-24
PCT/EP2021/072975 WO2022043165A1 (en) 2020-08-24 2021-08-18 Composition, its use and a process for selectively etching silicon-germanium material

Publications (4)

Publication Number Publication Date
JP2023539238A JP2023539238A (ja) 2023-09-13
JP2023539238A5 JP2023539238A5 (https=) 2024-08-27
JPWO2022043165A5 JPWO2022043165A5 (https=) 2024-08-27
JP7754920B2 true JP7754920B2 (ja) 2025-10-15

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ID=72240282

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JP2023513264A Active JP7754920B2 (ja) 2020-08-24 2021-08-18 ケイ素－ゲルマニウム材料の選択的エッチングのための組成物、その使用及び方法

Country Status (7)

Country Link
US (1) US20230326759A1 (https=)
EP (1) EP4200895A1 (https=)
JP (1) JP7754920B2 (https=)
KR (1) KR20230054674A (https=)
CN (1) CN116195036A (https=)
IL (1) IL300758A (https=)
WO (1) WO2022043165A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022008306A1 (en) * 2020-07-09 2022-01-13 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
KR20250148723A (ko) * 2023-03-24 2025-10-14 후지필름 가부시키가이샤 처리액, 처리 방법
WO2025064429A1 (en) * 2023-09-22 2025-03-27 Entegris, Inc. Etchant compositions and related methods
WO2026022021A1 (en) 2024-07-25 2026-01-29 Basf Se Composition, its use and a process for selectively etching silicon-germanium layers
WO2026042511A1 (ja) * 2024-08-20 2026-02-26 富士フイルム株式会社 薬液、被処理物の処理方法、半導体デバイスの製造方法
CN119979170B (zh) * 2024-12-13 2026-03-03 湖北兴福电子材料股份有限公司 一种适用于微电子器件从硅锗/硅叠层中相对于硅选择性去除硅锗的组合物

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018207108A (ja) 2017-06-05 2018-12-27 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液
JP2019050365A (ja) 2017-08-25 2019-03-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中にシリコン−ゲルマニウム／シリコン積層体からシリコン−ゲルマニウム合金を選択的に除去するためのエッチング液
JP2019165218A (ja) 2018-03-09 2019-09-26 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中にシリコン−ゲルマニウム／ゲルマニウムスタックからシリコン−ゲルマニウム合金を選択的に除去するためのエッチング溶液
US20200172808A1 (en) 2018-12-03 2020-06-04 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
JP2020107724A (ja) 2018-12-27 2020-07-09 東京応化工業株式会社 エッチング液、及び半導体素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018207108A (ja) 2017-06-05 2018-12-27 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液
JP2019050365A (ja) 2017-08-25 2019-03-28 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中にシリコン−ゲルマニウム／シリコン積層体からシリコン−ゲルマニウム合金を選択的に除去するためのエッチング液
JP2019165218A (ja) 2018-03-09 2019-09-26 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 半導体デバイスの製造中にシリコン−ゲルマニウム／ゲルマニウムスタックからシリコン−ゲルマニウム合金を選択的に除去するためのエッチング溶液
US20200172808A1 (en) 2018-12-03 2020-06-04 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
JP2020107724A (ja) 2018-12-27 2020-07-09 東京応化工業株式会社 エッチング液、及び半導体素子の製造方法

Also Published As

Publication number Publication date
KR20230054674A (ko) 2023-04-25
US20230326759A1 (en) 2023-10-12
WO2022043165A1 (en) 2022-03-03
JP2023539238A (ja) 2023-09-13
TW202219323A (zh) 2022-05-16
CN116195036A (zh) 2023-05-30
EP4200895A1 (en) 2023-06-28
IL300758A (en) 2023-04-01

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