JP7678120B2 - シャワープレート - Google Patents

シャワープレート Download PDF

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Publication number
JP7678120B2
JP7678120B2 JP2023551811A JP2023551811A JP7678120B2 JP 7678120 B2 JP7678120 B2 JP 7678120B2 JP 2023551811 A JP2023551811 A JP 2023551811A JP 2023551811 A JP2023551811 A JP 2023551811A JP 7678120 B2 JP7678120 B2 JP 7678120B2
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Japan
Prior art keywords
shower plate
inner space
introduction holes
flow path
holes
Prior art date
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JP2023551811A
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English (en)
Japanese (ja)
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JPWO2023054531A1 (https=
JPWO2023054531A5 (https=
Inventor
猛 宗石
大貴 渡邉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
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Kyocera Corp
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Publication date
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Publication of JPWO2023054531A1 publication Critical patent/JPWO2023054531A1/ja
Publication of JPWO2023054531A5 publication Critical patent/JPWO2023054531A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2023551811A 2021-09-29 2022-09-28 シャワープレート Active JP7678120B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021159090 2021-09-29
JP2021159090 2021-09-29
PCT/JP2022/036301 WO2023054531A1 (ja) 2021-09-29 2022-09-28 シャワープレート

Publications (3)

Publication Number Publication Date
JPWO2023054531A1 JPWO2023054531A1 (https=) 2023-04-06
JPWO2023054531A5 JPWO2023054531A5 (https=) 2024-06-13
JP7678120B2 true JP7678120B2 (ja) 2025-05-15

Family

ID=85780722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023551811A Active JP7678120B2 (ja) 2021-09-29 2022-09-28 シャワープレート

Country Status (2)

Country Link
JP (1) JP7678120B2 (https=)
WO (1) WO2023054531A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315680A (ja) 1999-04-30 2000-11-14 Ngk Insulators Ltd 半導体製造装置用のセラミックス製ガス供給構造
JP2008001923A (ja) 2006-06-20 2008-01-10 Tokyo Electron Ltd 成膜装置、ガス供給装置、成膜方法及び記憶媒体
JP2010047780A (ja) 2008-08-19 2010-03-04 Shibaura Mechatronics Corp 真空処理装置及び真空処理方法
JP2012009752A (ja) 2010-06-28 2012-01-12 Sharp Corp 気相成長装置、及びガス吐出装置
WO2012124047A1 (ja) 2011-03-15 2012-09-20 東芝三菱電機産業システム株式会社 成膜装置
JP2015095551A (ja) 2013-11-12 2015-05-18 東京エレクトロン株式会社 シャワーヘッドアセンブリ及びプラズマ処理装置
CN107393802A (zh) 2017-07-17 2017-11-24 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统的喷淋头
WO2018190220A1 (ja) 2017-04-14 2018-10-18 住友電気工業株式会社 シャワーヘッド
JP2019114653A (ja) 2017-12-22 2019-07-11 東京エレクトロン株式会社 基板処理装置および温度制御方法
WO2020116246A1 (ja) 2018-12-06 2020-06-11 東京エレクトロン株式会社 シャワープレート、プラズマ処理装置及びプラズマ処理方法
WO2020241703A1 (ja) 2019-05-30 2020-12-03 京セラ株式会社 流路部材

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315680A (ja) 1999-04-30 2000-11-14 Ngk Insulators Ltd 半導体製造装置用のセラミックス製ガス供給構造
JP2008001923A (ja) 2006-06-20 2008-01-10 Tokyo Electron Ltd 成膜装置、ガス供給装置、成膜方法及び記憶媒体
JP2010047780A (ja) 2008-08-19 2010-03-04 Shibaura Mechatronics Corp 真空処理装置及び真空処理方法
JP2012009752A (ja) 2010-06-28 2012-01-12 Sharp Corp 気相成長装置、及びガス吐出装置
WO2012124047A1 (ja) 2011-03-15 2012-09-20 東芝三菱電機産業システム株式会社 成膜装置
JP2015095551A (ja) 2013-11-12 2015-05-18 東京エレクトロン株式会社 シャワーヘッドアセンブリ及びプラズマ処理装置
WO2018190220A1 (ja) 2017-04-14 2018-10-18 住友電気工業株式会社 シャワーヘッド
CN107393802A (zh) 2017-07-17 2017-11-24 江苏鲁汶仪器有限公司 一种等离子体刻蚀系统的喷淋头
JP2019114653A (ja) 2017-12-22 2019-07-11 東京エレクトロン株式会社 基板処理装置および温度制御方法
WO2020116246A1 (ja) 2018-12-06 2020-06-11 東京エレクトロン株式会社 シャワープレート、プラズマ処理装置及びプラズマ処理方法
WO2020241703A1 (ja) 2019-05-30 2020-12-03 京セラ株式会社 流路部材

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Publication number Publication date
WO2023054531A1 (ja) 2023-04-06
JPWO2023054531A1 (https=) 2023-04-06

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