JP7669643B2 - 画像表示装置の製造方法および画像表示装置 - Google Patents

画像表示装置の製造方法および画像表示装置 Download PDF

Info

Publication number
JP7669643B2
JP7669643B2 JP2022550477A JP2022550477A JP7669643B2 JP 7669643 B2 JP7669643 B2 JP 7669643B2 JP 2022550477 A JP2022550477 A JP 2022550477A JP 2022550477 A JP2022550477 A JP 2022550477A JP 7669643 B2 JP7669643 B2 JP 7669643B2
Authority
JP
Japan
Prior art keywords
light
insulating film
layer
wiring
image display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022550477A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022059528A1 (https=
Inventor
肇 秋元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of JPWO2022059528A1 publication Critical patent/JPWO2022059528A1/ja
Application granted granted Critical
Publication of JP7669643B2 publication Critical patent/JP7669643B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
JP2022550477A 2020-09-17 2021-09-03 画像表示装置の製造方法および画像表示装置 Active JP7669643B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020156726 2020-09-17
JP2020156726 2020-09-17
PCT/JP2021/032529 WO2022059528A1 (ja) 2020-09-17 2021-09-03 画像表示装置の製造方法および画像表示装置

Publications (2)

Publication Number Publication Date
JPWO2022059528A1 JPWO2022059528A1 (https=) 2022-03-24
JP7669643B2 true JP7669643B2 (ja) 2025-04-30

Family

ID=80776955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022550477A Active JP7669643B2 (ja) 2020-09-17 2021-09-03 画像表示装置の製造方法および画像表示装置

Country Status (6)

Country Link
US (1) US20230215907A1 (https=)
EP (1) EP4216290A4 (https=)
JP (1) JP7669643B2 (https=)
CN (1) CN116195075A (https=)
TW (1) TWI882173B (https=)
WO (1) WO2022059528A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022113949A1 (ja) * 2020-11-25 2022-06-02 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
US12074146B2 (en) * 2021-12-03 2024-08-27 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and manufacturing method thereof
CN114203734B (zh) * 2021-12-11 2023-08-22 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
KR20250002105A (ko) * 2022-04-20 2025-01-07 도레이 카부시키가이샤 표시 장치
TWI865239B (zh) * 2023-12-11 2024-12-01 友達光電股份有限公司 顯示裝置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
JP2007242645A (ja) 2006-03-03 2007-09-20 Rohm Co Ltd 窒化物半導体発光素子及びその製造方法
JP2008159767A (ja) 2006-12-22 2008-07-10 Oki Data Corp 発光表示装置
US20090078963A1 (en) 2007-07-09 2009-03-26 Salah Khodja Nano-optoelectronic chip structure and method
JP2009111371A (ja) 2007-10-10 2009-05-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2010219310A (ja) 2009-03-17 2010-09-30 Sharp Corp 光デバイスおよび光デバイス構造
US20180233536A1 (en) 2014-10-17 2018-08-16 Intel Corporation Microled display & assembly
US20180259570A1 (en) 2017-01-23 2018-09-13 Tesoro Scientific, Inc. Light emitting diode (led) test apparatus and method of manufacture
US20190157523A1 (en) 2017-11-20 2019-05-23 Kaistar Lighting (Xiamen) Co., Ltd. Micro led display device and method for manufacturing same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US20120242624A1 (en) * 2009-11-27 2012-09-27 Sharp Kabushiki Kaisha Thin film transistor and method for fabricating the same, semiconductor device and method for fabricating the same, as well as display
CN102822734B (zh) * 2010-04-16 2015-01-21 夏普株式会社 电子基板的制造方法、液晶显示装置的制造方法、电子基板以及液晶显示装置
TWI552321B (zh) * 2014-09-30 2016-10-01 群創光電股份有限公司 顯示面板及顯示裝置
US9871060B2 (en) * 2015-02-16 2018-01-16 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US11239394B2 (en) * 2016-03-18 2022-02-01 Lg Innotek Co., Ltd. Semiconductor device and display device including the same
KR102631260B1 (ko) * 2016-04-08 2024-01-31 삼성디스플레이 주식회사 표시장치 및 표시장치 제조방법
WO2019225708A1 (ja) * 2018-05-25 2019-11-28 大日本印刷株式会社 表示装置用配線基板および表示装置、ならびに配線基板とその作製方法
KR102698293B1 (ko) * 2018-11-27 2024-08-23 삼성전자주식회사 디스플레이 장치 및 제조 방법
JP7457255B2 (ja) * 2019-05-08 2024-03-28 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
JP2007242645A (ja) 2006-03-03 2007-09-20 Rohm Co Ltd 窒化物半導体発光素子及びその製造方法
JP2008159767A (ja) 2006-12-22 2008-07-10 Oki Data Corp 発光表示装置
US20090078963A1 (en) 2007-07-09 2009-03-26 Salah Khodja Nano-optoelectronic chip structure and method
JP2009111371A (ja) 2007-10-10 2009-05-21 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2010219310A (ja) 2009-03-17 2010-09-30 Sharp Corp 光デバイスおよび光デバイス構造
US20180233536A1 (en) 2014-10-17 2018-08-16 Intel Corporation Microled display & assembly
US20180259570A1 (en) 2017-01-23 2018-09-13 Tesoro Scientific, Inc. Light emitting diode (led) test apparatus and method of manufacture
US20190157523A1 (en) 2017-11-20 2019-05-23 Kaistar Lighting (Xiamen) Co., Ltd. Micro led display device and method for manufacturing same

Also Published As

Publication number Publication date
WO2022059528A1 (ja) 2022-03-24
EP4216290A1 (en) 2023-07-26
US20230215907A1 (en) 2023-07-06
JPWO2022059528A1 (https=) 2022-03-24
TWI882173B (zh) 2025-05-01
TW202230311A (zh) 2022-08-01
EP4216290A4 (en) 2024-10-23
CN116195075A (zh) 2023-05-30

Similar Documents

Publication Publication Date Title
JP7669643B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7585602B2 (ja) 画像表示装置の製造方法および画像表示装置
US12211883B2 (en) Method for manufacturing image display device and image display device
US20240030399A1 (en) Image display device and method for manufacturing image display device
US20250248173A1 (en) Image display device manufacturing method and image display device
JP7523738B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7728516B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7801659B2 (ja) 画像表示装置の製造方法および画像表示装置
US20240021773A1 (en) Image display device and method for manufacturing image display device
JP7647012B2 (ja) 画像表示装置の製造方法および画像表示装置
US20230343813A1 (en) Method for manufacturing image display device and image display device
JP7624587B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7531089B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7818161B2 (ja) 画像表示装置の製造方法および画像表示装置
JP7796318B2 (ja) 画像表示装置の製造方法および画像表示装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240805

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250317

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250330

R150 Certificate of patent or registration of utility model

Ref document number: 7669643

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150