JP7669159B2 - ショットキーバリアダイオード - Google Patents

ショットキーバリアダイオード Download PDF

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Publication number
JP7669159B2
JP7669159B2 JP2021028799A JP2021028799A JP7669159B2 JP 7669159 B2 JP7669159 B2 JP 7669159B2 JP 2021028799 A JP2021028799 A JP 2021028799A JP 2021028799 A JP2021028799 A JP 2021028799A JP 7669159 B2 JP7669159 B2 JP 7669159B2
Authority
JP
Japan
Prior art keywords
trench
anode electrode
schottky barrier
barrier diode
peripheral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021028799A
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English (en)
Japanese (ja)
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JP2022129918A (ja
JP2022129918A5 (https=
Inventor
潤 有馬
実 藤田
克己 川崎
潤 平林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2021028799A priority Critical patent/JP7669159B2/ja
Application filed by TDK Corp filed Critical TDK Corp
Priority to EP22759244.1A priority patent/EP4300586A4/en
Priority to US18/260,520 priority patent/US12520510B2/en
Priority to CN202280016981.1A priority patent/CN116888743A/zh
Priority to PCT/JP2022/003329 priority patent/WO2022181203A1/ja
Priority to TW111105174A priority patent/TWI803189B/zh
Publication of JP2022129918A publication Critical patent/JP2022129918A/ja
Publication of JP2022129918A5 publication Critical patent/JP2022129918A5/ja
Application granted granted Critical
Publication of JP7669159B2 publication Critical patent/JP7669159B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H10D8/605—Schottky-barrier diodes  of the trench conductor-insulator-semiconductor barrier type, e.g. trench MOS barrier Schottky rectifiers [TMBS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

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  • Electrodes Of Semiconductors (AREA)
JP2021028799A 2021-02-25 2021-02-25 ショットキーバリアダイオード Active JP7669159B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2021028799A JP7669159B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード
US18/260,520 US12520510B2 (en) 2021-02-25 2022-01-28 Schottky barrier diode
CN202280016981.1A CN116888743A (zh) 2021-02-25 2022-01-28 肖特基势垒二极管
PCT/JP2022/003329 WO2022181203A1 (ja) 2021-02-25 2022-01-28 ショットキーバリアダイオード
EP22759244.1A EP4300586A4 (en) 2021-02-25 2022-01-28 SCHOTTKY BARRIER DIODE
TW111105174A TWI803189B (zh) 2021-02-25 2022-02-14 肖特基能障二極體

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021028799A JP7669159B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード

Publications (3)

Publication Number Publication Date
JP2022129918A JP2022129918A (ja) 2022-09-06
JP2022129918A5 JP2022129918A5 (https=) 2024-07-03
JP7669159B2 true JP7669159B2 (ja) 2025-04-28

Family

ID=83049239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021028799A Active JP7669159B2 (ja) 2021-02-25 2021-02-25 ショットキーバリアダイオード

Country Status (6)

Country Link
US (1) US12520510B2 (https=)
EP (1) EP4300586A4 (https=)
JP (1) JP7669159B2 (https=)
CN (1) CN116888743A (https=)
TW (1) TWI803189B (https=)
WO (1) WO2022181203A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI905790B (zh) * 2023-09-21 2025-11-21 日商Ｔｄｋ股份有限公司 半導體裝置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010000033A1 (en) 1999-05-28 2001-03-15 Baliga Bantval Jayant Methods of forming power semiconductor devices having tapered trench-based insulating regions therein
US20170301792A1 (en) 2016-04-15 2017-10-19 Infineon Technologies Ag Semiconductor Devices and a Method for Forming a Semiconductor Device
JP2018200919A (ja) 2017-05-25 2018-12-20 富士電機株式会社 半導体装置及びその製造方法
WO2019082580A1 (ja) 2017-10-26 2019-05-02 Tdk株式会社 ショットキーバリアダイオード
WO2020004437A1 (ja) 2018-06-29 2020-01-02 京セラ株式会社 半導体デバイス及び電気装置
WO2020039971A1 (ja) 2018-08-22 2020-02-27 三菱電機株式会社 酸化物半導体装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8610235B2 (en) * 2011-09-22 2013-12-17 Alpha And Omega Semiconductor Incorporated Trench MOSFET with integrated Schottky barrier diode
JP6296445B2 (ja) 2014-02-10 2018-03-20 ローム株式会社 ショットキーバリアダイオード
JP6845397B2 (ja) 2016-04-28 2021-03-17 株式会社タムラ製作所 トレンチｍｏｓ型ショットキーダイオード
JP7165322B2 (ja) * 2018-03-30 2022-11-04 Tdk株式会社 ショットキーバリアダイオード
US20210036166A1 (en) * 2019-08-01 2021-02-04 AZ Power, Inc MERGED PiN SCHOTTKY (MPS) DIODE WITH MULTIPLE CELL DESIGN AND MANUFACTURING METHOD THEREOF

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010000033A1 (en) 1999-05-28 2001-03-15 Baliga Bantval Jayant Methods of forming power semiconductor devices having tapered trench-based insulating regions therein
US20170301792A1 (en) 2016-04-15 2017-10-19 Infineon Technologies Ag Semiconductor Devices and a Method for Forming a Semiconductor Device
JP2018200919A (ja) 2017-05-25 2018-12-20 富士電機株式会社 半導体装置及びその製造方法
WO2019082580A1 (ja) 2017-10-26 2019-05-02 Tdk株式会社 ショットキーバリアダイオード
WO2020004437A1 (ja) 2018-06-29 2020-01-02 京セラ株式会社 半導体デバイス及び電気装置
WO2020039971A1 (ja) 2018-08-22 2020-02-27 三菱電機株式会社 酸化物半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2022181203A1 (ja) 2022-09-01
US20240055536A1 (en) 2024-02-15
TWI803189B (zh) 2023-05-21
EP4300586A1 (en) 2024-01-03
TW202239009A (zh) 2022-10-01
JP2022129918A (ja) 2022-09-06
US12520510B2 (en) 2026-01-06
CN116888743A (zh) 2023-10-13
EP4300586A4 (en) 2025-01-15

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