JP7637162B2 - 検出装置及び検出装置の製造方法 - Google Patents

検出装置及び検出装置の製造方法 Download PDF

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Publication number
JP7637162B2
JP7637162B2 JP2022579397A JP2022579397A JP7637162B2 JP 7637162 B2 JP7637162 B2 JP 7637162B2 JP 2022579397 A JP2022579397 A JP 2022579397A JP 2022579397 A JP2022579397 A JP 2022579397A JP 7637162 B2 JP7637162 B2 JP 7637162B2
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light
substrate
photodiodes
optical filter
protrusion
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Japanese (ja)
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JPWO2022168523A1 (https=
Inventor
和己 松永
盛右 新木
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Japan Display Inc
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Japan Display Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H10K39/34—Organic image sensors integrated with organic light-emitting diodes [OLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

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JP2022579397A 2021-02-02 2022-01-06 検出装置及び検出装置の製造方法 Active JP7637162B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021014986 2021-02-02
JP2021014986 2021-02-02
PCT/JP2022/000245 WO2022168523A1 (ja) 2021-02-02 2022-01-06 検出装置及び検出装置の製造方法

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JPWO2022168523A1 JPWO2022168523A1 (https=) 2022-08-11
JP7637162B2 true JP7637162B2 (ja) 2025-02-27

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JP2022579397A Active JP7637162B2 (ja) 2021-02-02 2022-01-06 検出装置及び検出装置の製造方法

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US (1) US20230378383A1 (https=)
JP (1) JP7637162B2 (https=)
WO (1) WO2022168523A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2024214583A1 (https=) * 2023-04-14 2024-10-17

Citations (13)

* Cited by examiner, † Cited by third party
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JP2005072662A (ja) 2003-08-25 2005-03-17 Sharp Corp 透光板および透光板の製造方法、並びに透光板を用いた画像入力装置
US20090184638A1 (en) 2008-01-22 2009-07-23 Micron Technology, Inc. Field emitter image sensor devices, systems, and methods
JP2010098055A (ja) 2008-10-15 2010-04-30 Hitachi Maxell Ltd 遮光構造、撮像装置及びその製造方法、並びに生体情報取得装置
JP2011205088A (ja) 2010-03-05 2011-10-13 Seiko Epson Corp 光学センサー及び電子機器
JP2012182432A (ja) 2011-02-09 2012-09-20 Canon Inc 光電変換装置および撮像システム
JP2014022675A (ja) 2012-07-23 2014-02-03 Seiko Epson Corp センシング装置、検査装置、及び電子機器
JP2014116429A (ja) 2012-12-07 2014-06-26 Japan Display Inc 撮像装置及び撮像表示システム
JP2014143376A (ja) 2013-01-25 2014-08-07 Sony Corp 半導体装置及び半導体装置の製造方法
JP2015065268A (ja) 2013-09-25 2015-04-09 ソニー株式会社 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器
JP2016096323A (ja) 2014-11-13 2016-05-26 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ イメージセンサー
JP2016152403A (ja) 2015-02-19 2016-08-22 東京エレクトロン株式会社 遮光体を含む光学装置の製造方法、および記憶媒体
JP2019186516A (ja) 2018-04-16 2019-10-24 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ 光学センサおよびその形成方法
JP2020067834A (ja) 2018-10-24 2020-04-30 株式会社ジャパンディスプレイ 指紋検出装置及び指紋検出装置付き表示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6299058B2 (ja) * 2011-03-02 2018-03-28 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び電子機器
US8779542B2 (en) * 2012-11-21 2014-07-15 Intersil Americas LLC Photodetectors useful as ambient light sensors and methods for use in manufacturing the same
US10134791B1 (en) * 2017-12-20 2018-11-20 Novatek Microelectronics Corp. Backside illumination global shutter sensor and pixel thereof
JP7403971B2 (ja) * 2019-05-08 2023-12-25 株式会社ジャパンディスプレイ 検出装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005072662A (ja) 2003-08-25 2005-03-17 Sharp Corp 透光板および透光板の製造方法、並びに透光板を用いた画像入力装置
US20090184638A1 (en) 2008-01-22 2009-07-23 Micron Technology, Inc. Field emitter image sensor devices, systems, and methods
JP2010098055A (ja) 2008-10-15 2010-04-30 Hitachi Maxell Ltd 遮光構造、撮像装置及びその製造方法、並びに生体情報取得装置
JP2011205088A (ja) 2010-03-05 2011-10-13 Seiko Epson Corp 光学センサー及び電子機器
JP2012182432A (ja) 2011-02-09 2012-09-20 Canon Inc 光電変換装置および撮像システム
JP2014022675A (ja) 2012-07-23 2014-02-03 Seiko Epson Corp センシング装置、検査装置、及び電子機器
JP2014116429A (ja) 2012-12-07 2014-06-26 Japan Display Inc 撮像装置及び撮像表示システム
JP2014143376A (ja) 2013-01-25 2014-08-07 Sony Corp 半導体装置及び半導体装置の製造方法
JP2015065268A (ja) 2013-09-25 2015-04-09 ソニー株式会社 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器
JP2016096323A (ja) 2014-11-13 2016-05-26 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ イメージセンサー
JP2016152403A (ja) 2015-02-19 2016-08-22 東京エレクトロン株式会社 遮光体を含む光学装置の製造方法、および記憶媒体
JP2019186516A (ja) 2018-04-16 2019-10-24 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ 光学センサおよびその形成方法
JP2020067834A (ja) 2018-10-24 2020-04-30 株式会社ジャパンディスプレイ 指紋検出装置及び指紋検出装置付き表示装置

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US20230378383A1 (en) 2023-11-23
WO2022168523A1 (ja) 2022-08-11
JPWO2022168523A1 (https=) 2022-08-11

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