JP7612029B2 - 積層体 - Google Patents

積層体 Download PDF

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Publication number
JP7612029B2
JP7612029B2 JP2023542233A JP2023542233A JP7612029B2 JP 7612029 B2 JP7612029 B2 JP 7612029B2 JP 2023542233 A JP2023542233 A JP 2023542233A JP 2023542233 A JP2023542233 A JP 2023542233A JP 7612029 B2 JP7612029 B2 JP 7612029B2
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Japan
Prior art keywords
single crystal
gan
semiconductor layer
gas
film
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JP2023542233A
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Japanese (ja)
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JPWO2023021814A1 (https=
Inventor
守道 渡邊
宏之 柴田
潤 吉川
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023542233A 2021-08-20 2022-06-07 積層体 Active JP7612029B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021135162 2021-08-20
JP2021135162 2021-08-20
PCT/JP2022/023026 WO2023021814A1 (ja) 2021-08-20 2022-06-07 積層体

Publications (2)

Publication Number Publication Date
JPWO2023021814A1 JPWO2023021814A1 (https=) 2023-02-23
JP7612029B2 true JP7612029B2 (ja) 2025-01-10

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ID=85240437

Family Applications (1)

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JP2023542233A Active JP7612029B2 (ja) 2021-08-20 2022-06-07 積層体

Country Status (2)

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JP (1) JP7612029B2 (https=)
WO (1) WO2023021814A1 (https=)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019012826A (ja) * 2017-06-30 2019-01-24 国立研究開発法人物質・材料研究機構 ガリウム窒化物半導体基板、ガリウム窒化物半導体装置、撮像素子およびそれらの製造方法

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
BOSCHI et al.，Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD，Journal of Crystal Growth，2016年，Vol.443，p.25-30
LEONE et al.，Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transi，Journal of Crystal Growth，2020年，Vol.534，125511(1-6)
NIKOLAEV et al.，HVPE Growth and Characterization of ε-Ga2O3 Films on Various Substrates，ECS Journal of Solid State Science and Technology，2020年，Vol.9，045014
NISHINAKA et al.，Microstructures and rotational domains in orthorhombic ε-Ga2O3 thin films，Japanese Journal of Applied Physics，2018年，Vol.57，115601(1-7)
Yuichi OSHIMA，Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy，JOURNAL OF APPLIED PHYSICS，米国，2015年08月24日，118，085301-1 - 085301-5

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JPWO2023021814A1 (https=) 2023-02-23
WO2023021814A1 (ja) 2023-02-23

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