JP7605769B2 - 窒化物半導体装置 - Google Patents

窒化物半導体装置 Download PDF

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Publication number
JP7605769B2
JP7605769B2 JP2021569816A JP2021569816A JP7605769B2 JP 7605769 B2 JP7605769 B2 JP 7605769B2 JP 2021569816 A JP2021569816 A JP 2021569816A JP 2021569816 A JP2021569816 A JP 2021569816A JP 7605769 B2 JP7605769 B2 JP 7605769B2
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Japan
Prior art keywords
layer
nitride semiconductor
electron
opening
underlayer
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Japanese (ja)
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JPWO2021140898A1 (https=
Inventor
雅弘 小川
大輔 柴田
聡之 田村
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/477—Vertical HEMTs or vertical HHMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/478—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] the 2D charge carrier gas being at least partially not parallel to a main surface of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
JP2021569816A 2020-01-08 2020-12-21 窒化物半導体装置 Active JP7605769B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024218105A JP2025028178A (ja) 2020-01-08 2024-12-12 窒化物半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020001752 2020-01-08
JP2020001752 2020-01-08
PCT/JP2020/047685 WO2021140898A1 (ja) 2020-01-08 2020-12-21 窒化物半導体装置

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JP2024218105A Division JP2025028178A (ja) 2020-01-08 2024-12-12 窒化物半導体装置

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JPWO2021140898A1 JPWO2021140898A1 (https=) 2021-07-15
JP7605769B2 true JP7605769B2 (ja) 2024-12-24

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JP2024218105A Pending JP2025028178A (ja) 2020-01-08 2024-12-12 窒化物半導体装置

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JP (2) JP7605769B2 (https=)
WO (1) WO2021140898A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023127187A1 (https=) * 2021-12-27 2023-07-06
CN116632045A (zh) * 2023-06-14 2023-08-22 杭州士兰集昕微电子有限公司 一种氮化镓功率器件及其制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260140A (ja) 2003-02-06 2004-09-16 Toyota Central Res & Dev Lab Inc Ｉｉｉ族窒化物半導体を有する半導体素子
WO2012060206A1 (ja) 2010-11-04 2012-05-10 住友電気工業株式会社 半導体装置およびその製造方法
WO2013008422A1 (ja) 2011-07-12 2013-01-17 パナソニック株式会社 窒化物半導体装置およびその製造方法
WO2019097813A1 (ja) 2017-11-16 2019-05-23 パナソニック株式会社 窒化物半導体装置
WO2019181391A1 (ja) 2018-03-22 2019-09-26 パナソニック株式会社 窒化物半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5303948B2 (ja) * 2008-02-06 2013-10-02 豊田合成株式会社 オーミック電極形成方法、および電界効果トランジスタの製造方法
JP5566618B2 (ja) * 2008-03-07 2014-08-06 古河電気工業株式会社 ＧａＮ系半導体素子
JP4737471B2 (ja) 2009-10-08 2011-08-03 住友電気工業株式会社 半導体装置およびその製造方法
JP5353735B2 (ja) 2010-01-28 2013-11-27 住友電気工業株式会社 半導体装置およびその製造方法
WO2015004853A1 (ja) * 2013-07-12 2015-01-15 パナソニックＩｐマネジメント株式会社 半導体装置
US9728630B2 (en) * 2014-09-05 2017-08-08 Infineon Technologies Austria Ag High-electron-mobility transistor having a buried field plate
JP6755892B2 (ja) * 2016-02-08 2020-09-16 パナソニック株式会社 半導体装置
WO2020137303A1 (ja) 2018-12-27 2020-07-02 パナソニック株式会社 窒化物半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260140A (ja) 2003-02-06 2004-09-16 Toyota Central Res & Dev Lab Inc Ｉｉｉ族窒化物半導体を有する半導体素子
WO2012060206A1 (ja) 2010-11-04 2012-05-10 住友電気工業株式会社 半導体装置およびその製造方法
WO2013008422A1 (ja) 2011-07-12 2013-01-17 パナソニック株式会社 窒化物半導体装置およびその製造方法
WO2019097813A1 (ja) 2017-11-16 2019-05-23 パナソニック株式会社 窒化物半導体装置
WO2019181391A1 (ja) 2018-03-22 2019-09-26 パナソニック株式会社 窒化物半導体装置

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JPWO2021140898A1 (https=) 2021-07-15
JP2025028178A (ja) 2025-02-28
WO2021140898A1 (ja) 2021-07-15
US12317563B2 (en) 2025-05-27
US20230047842A1 (en) 2023-02-16

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