JP7556144B2 - イオンミリング装置 - Google Patents

イオンミリング装置 Download PDF

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Publication number
JP7556144B2
JP7556144B2 JP2023523842A JP2023523842A JP7556144B2 JP 7556144 B2 JP7556144 B2 JP 7556144B2 JP 2023523842 A JP2023523842 A JP 2023523842A JP 2023523842 A JP2023523842 A JP 2023523842A JP 7556144 B2 JP7556144 B2 JP 7556144B2
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JP
Japan
Prior art keywords
ion
ion beam
shutter
source
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023523842A
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English (en)
Japanese (ja)
Other versions
JPWO2022249371A5 (https=
JPWO2022249371A1 (https=
Inventor
翔太 会田
久幸 高須
健人 堀之内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Publication of JPWO2022249371A1 publication Critical patent/JPWO2022249371A1/ja
Publication of JPWO2022249371A5 publication Critical patent/JPWO2022249371A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/024—Moving components not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/047—Changing particle velocity
    • H01J2237/0473—Changing particle velocity accelerating
    • H01J2237/04735—Changing particle velocity accelerating with electrostatic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2023523842A 2021-05-27 2021-05-27 イオンミリング装置 Active JP7556144B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/020112 WO2022249371A1 (ja) 2021-05-27 2021-05-27 イオンミリング装置

Publications (3)

Publication Number Publication Date
JPWO2022249371A1 JPWO2022249371A1 (https=) 2022-12-01
JPWO2022249371A5 JPWO2022249371A5 (https=) 2024-02-15
JP7556144B2 true JP7556144B2 (ja) 2024-09-25

Family

ID=84229552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523842A Active JP7556144B2 (ja) 2021-05-27 2021-05-27 イオンミリング装置

Country Status (4)

Country Link
US (1) US20240258062A1 (https=)
JP (1) JP7556144B2 (https=)
KR (1) KR102820384B1 (https=)
WO (1) WO2022249371A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016189614A1 (ja) 2015-05-25 2016-12-01 株式会社日立ハイテクノロジーズ イオンミリング装置、及びイオンミリング方法
DE102016105462A1 (de) 2015-11-26 2017-06-01 Von Ardenne Gmbh Ionenstrahlquelle, Prozessieranordnung und Verfahren

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6100619B2 (ja) 2013-06-04 2017-03-22 株式会社日立ハイテクノロジーズ イオン源およびイオンミリング装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016189614A1 (ja) 2015-05-25 2016-12-01 株式会社日立ハイテクノロジーズ イオンミリング装置、及びイオンミリング方法
DE102016105462A1 (de) 2015-11-26 2017-06-01 Von Ardenne Gmbh Ionenstrahlquelle, Prozessieranordnung und Verfahren

Also Published As

Publication number Publication date
US20240258062A1 (en) 2024-08-01
KR20230169280A (ko) 2023-12-15
WO2022249371A1 (ja) 2022-12-01
KR102820384B1 (ko) 2025-06-16
JPWO2022249371A1 (https=) 2022-12-01

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