JP7515119B2 - Thin film transistor and its manufacturing method - Google Patents
Thin film transistor and its manufacturing method Download PDFInfo
- Publication number
- JP7515119B2 JP7515119B2 JP2021518334A JP2021518334A JP7515119B2 JP 7515119 B2 JP7515119 B2 JP 7515119B2 JP 2021518334 A JP2021518334 A JP 2021518334A JP 2021518334 A JP2021518334 A JP 2021518334A JP 7515119 B2 JP7515119 B2 JP 7515119B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- oxide semiconductor
- metal oxide
- film transistor
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000010410 layer Substances 0.000 claims description 163
- 239000004065 semiconductor Substances 0.000 claims description 140
- 229910044991 metal oxide Inorganic materials 0.000 claims description 96
- 150000004706 metal oxides Chemical class 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 56
- -1 polysiloxane Polymers 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 51
- 239000010408 film Substances 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 39
- 239000000203 mixture Substances 0.000 claims description 37
- 230000001678 irradiating effect Effects 0.000 claims description 25
- 229920001296 polysiloxane Polymers 0.000 claims description 24
- 150000003839 salts Chemical class 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 18
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- 239000011737 fluorine Substances 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 11
- 239000011254 layer-forming composition Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 26
- 238000000576 coating method Methods 0.000 description 18
- 239000004094 surface-active agent Substances 0.000 description 15
- 229910052733 gallium Inorganic materials 0.000 description 14
- 229910052738 indium Inorganic materials 0.000 description 13
- 239000011787 zinc oxide Substances 0.000 description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 11
- 125000000217 alkyl group Chemical group 0.000 description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 235000014113 dietary fatty acids Nutrition 0.000 description 7
- 239000000194 fatty acid Substances 0.000 description 7
- 229930195729 fatty acid Natural products 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 229910052718 tin Inorganic materials 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- 229910019142 PO4 Inorganic materials 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 6
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 235000021317 phosphate Nutrition 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 150000004665 fatty acids Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 150000002823 nitrates Chemical class 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- NMRPBPVERJPACX-UHFFFAOYSA-N (3S)-octan-3-ol Natural products CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 description 3
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 3
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical class F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 239000004202 carbamide Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000005300 metallic glass Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 3
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- LUBJCRLGQSPQNN-UHFFFAOYSA-N 1-Phenylurea Chemical compound NC(=O)NC1=CC=CC=C1 LUBJCRLGQSPQNN-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 2
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 2
- WFRBDWRZVBPBDO-UHFFFAOYSA-N 2-methyl-2-pentanol Chemical compound CCCC(C)(C)O WFRBDWRZVBPBDO-UHFFFAOYSA-N 0.000 description 2
- NGDNVOAEIVQRFH-UHFFFAOYSA-N 2-nonanol Chemical compound CCCCCCCC(C)O NGDNVOAEIVQRFH-UHFFFAOYSA-N 0.000 description 2
- PRNCMAKCNVRZFX-UHFFFAOYSA-N 3,7-dimethyloctan-1-ol Chemical compound CC(C)CCCC(C)CCO PRNCMAKCNVRZFX-UHFFFAOYSA-N 0.000 description 2
- MXLMTQWGSQIYOW-UHFFFAOYSA-N 3-methyl-2-butanol Chemical compound CC(C)C(C)O MXLMTQWGSQIYOW-UHFFFAOYSA-N 0.000 description 2
- FRDAATYAJDYRNW-UHFFFAOYSA-N 3-methyl-3-pentanol Chemical compound CCC(C)(O)CC FRDAATYAJDYRNW-UHFFFAOYSA-N 0.000 description 2
- IWTBVKIGCDZRPL-UHFFFAOYSA-N 3-methylpentanol Chemical compound CCC(C)CCO IWTBVKIGCDZRPL-UHFFFAOYSA-N 0.000 description 2
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 2
- BKQICAFAUMRYLZ-UHFFFAOYSA-N 4-methylheptan-3-ol Chemical compound CCCC(C)C(O)CC BKQICAFAUMRYLZ-UHFFFAOYSA-N 0.000 description 2
- FCOUHTHQYOMLJT-UHFFFAOYSA-N 6-methylheptan-2-ol Chemical compound CC(C)CCCC(C)O FCOUHTHQYOMLJT-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KXDAEFPNCMNJSK-UHFFFAOYSA-N Benzamide Chemical compound NC(=O)C1=CC=CC=C1 KXDAEFPNCMNJSK-UHFFFAOYSA-N 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- XGEGHDBEHXKFPX-UHFFFAOYSA-N N-methyl urea Chemical compound CNC(N)=O XGEGHDBEHXKFPX-UHFFFAOYSA-N 0.000 description 2
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- BVCZEBOGSOYJJT-UHFFFAOYSA-N ammonium carbamate Chemical compound [NH4+].NC([O-])=O BVCZEBOGSOYJJT-UHFFFAOYSA-N 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical class OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 2
- 239000003093 cationic surfactant Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- WCGGWVOVFQNRRS-UHFFFAOYSA-N dichloroacetamide Chemical compound NC(=O)C(Cl)Cl WCGGWVOVFQNRRS-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 150000003840 hydrochlorides Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- GTCAXTIRRLKXRU-UHFFFAOYSA-N methyl carbamate Chemical compound COC(N)=O GTCAXTIRRLKXRU-UHFFFAOYSA-N 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 2
- SOWBFZRMHSNYGE-UHFFFAOYSA-N oxamic acid Chemical compound NC(=O)C(O)=O SOWBFZRMHSNYGE-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- AQIXEPGDORPWBJ-UHFFFAOYSA-N pentan-3-ol Chemical compound CCC(O)CC AQIXEPGDORPWBJ-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 150000003462 sulfoxides Chemical class 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 239000001618 (3R)-3-methylpentan-1-ol Substances 0.000 description 1
- ULUZGMIUTMRARO-UHFFFAOYSA-N (carbamoylamino)urea Chemical compound NC(=O)NNC(N)=O ULUZGMIUTMRARO-UHFFFAOYSA-N 0.000 description 1
- BSSNZUFKXJJCBG-OWOJBTEDSA-N (e)-but-2-enediamide Chemical compound NC(=O)\C=C\C(N)=O BSSNZUFKXJJCBG-OWOJBTEDSA-N 0.000 description 1
- BSSNZUFKXJJCBG-UPHRSURJSA-N (z)-but-2-enediamide Chemical compound NC(=O)\C=C/C(N)=O BSSNZUFKXJJCBG-UPHRSURJSA-N 0.000 description 1
- YBBLOADPFWKNGS-UHFFFAOYSA-N 1,1-dimethylurea Chemical compound CN(C)C(N)=O YBBLOADPFWKNGS-UHFFFAOYSA-N 0.000 description 1
- KNIKDPRISVIPBU-UHFFFAOYSA-N 1,2-dichloro-4-[isocyano-(4-methylphenyl)sulfonylmethyl]benzene Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C([N+]#[C-])C1=CC=C(Cl)C(Cl)=C1 KNIKDPRISVIPBU-UHFFFAOYSA-N 0.000 description 1
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical compound C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 description 1
- 239000005968 1-Decanol Substances 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- VSNHCAURESNICA-NJFSPNSNSA-N 1-oxidanylurea Chemical compound N[14C](=O)NO VSNHCAURESNICA-NJFSPNSNSA-N 0.000 description 1
- UPQQXPKAYZYUKO-UHFFFAOYSA-N 2,2,2-trichloroacetamide Chemical compound OC(=N)C(Cl)(Cl)Cl UPQQXPKAYZYUKO-UHFFFAOYSA-N 0.000 description 1
- NRKYWOKHZRQRJR-UHFFFAOYSA-N 2,2,2-trifluoroacetamide Chemical compound NC(=O)C(F)(F)F NRKYWOKHZRQRJR-UHFFFAOYSA-N 0.000 description 1
- KQTOYEUYHXUEDB-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanamide Chemical compound NC(=O)C(F)(F)C(F)(F)F KQTOYEUYHXUEDB-UHFFFAOYSA-N 0.000 description 1
- FOBJABJCODOMEO-UHFFFAOYSA-N 2,2,3,3,4,4,4-heptafluorobutanamide Chemical compound NC(=O)C(F)(F)C(F)(F)C(F)(F)F FOBJABJCODOMEO-UHFFFAOYSA-N 0.000 description 1
- WBIDVKZMUARURD-UHFFFAOYSA-N 2,2-dimethoxypropanamide Chemical compound COC(C)(OC)C(N)=O WBIDVKZMUARURD-UHFFFAOYSA-N 0.000 description 1
- HMSVXZJWPVIVIV-UHFFFAOYSA-N 2,2-dimethylpentan-3-ol Chemical compound CCC(O)C(C)(C)C HMSVXZJWPVIVIV-UHFFFAOYSA-N 0.000 description 1
- WPWWHXPRJFDTTJ-UHFFFAOYSA-N 2,3,4,5,6-pentafluorobenzamide Chemical compound NC(=O)C1=C(F)C(F)=C(F)C(F)=C1F WPWWHXPRJFDTTJ-UHFFFAOYSA-N 0.000 description 1
- RFZHJHSNHYIRNE-UHFFFAOYSA-N 2,3-dimethylpentan-3-ol Chemical compound CCC(C)(O)C(C)C RFZHJHSNHYIRNE-UHFFFAOYSA-N 0.000 description 1
- ZNRVRWHPZZOTIE-UHFFFAOYSA-N 2,4,4-trimethylpentan-1-ol Chemical compound OCC(C)CC(C)(C)C ZNRVRWHPZZOTIE-UHFFFAOYSA-N 0.000 description 1
- BAYAKMPRFGNNFW-UHFFFAOYSA-N 2,4-dimethylpentan-3-ol Chemical compound CC(C)C(O)C(C)C BAYAKMPRFGNNFW-UHFFFAOYSA-N 0.000 description 1
- ACUZDYFTRHEKOS-SNVBAGLBSA-N 2-Decanol Natural products CCCCCCCC[C@@H](C)O ACUZDYFTRHEKOS-SNVBAGLBSA-N 0.000 description 1
- WOFPPJOZXUTRAU-UHFFFAOYSA-N 2-Ethyl-1-hexanol Natural products CCCCC(O)CCC WOFPPJOZXUTRAU-UHFFFAOYSA-N 0.000 description 1
- WKNMKGVLOWGGOU-UHFFFAOYSA-N 2-aminoacetamide;hydron;chloride Chemical compound Cl.NCC(N)=O WKNMKGVLOWGGOU-UHFFFAOYSA-N 0.000 description 1
- BITBMHVXCILUEX-UHFFFAOYSA-N 2-chloroethylurea Chemical compound NC(=O)NCCCl BITBMHVXCILUEX-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- FVTWJXMFYOXOKK-UHFFFAOYSA-N 2-fluoroacetamide Chemical compound NC(=O)CF FVTWJXMFYOXOKK-UHFFFAOYSA-N 0.000 description 1
- MOKRDWKSHLLYKM-UHFFFAOYSA-N 2-hydrazinyl-2-oxoacetamide Chemical compound NNC(=O)C(N)=O MOKRDWKSHLLYKM-UHFFFAOYSA-N 0.000 description 1
- DRYMMXUBDRJPDS-UHFFFAOYSA-N 2-hydroxy-2-methylpropanamide Chemical compound CC(C)(O)C(N)=O DRYMMXUBDRJPDS-UHFFFAOYSA-N 0.000 description 1
- CLAHOZSYMRNIPY-UHFFFAOYSA-N 2-hydroxyethylurea Chemical compound NC(=O)NCCO CLAHOZSYMRNIPY-UHFFFAOYSA-N 0.000 description 1
- ISTJMQSHILQAEC-UHFFFAOYSA-N 2-methyl-3-pentanol Chemical compound CCC(O)C(C)C ISTJMQSHILQAEC-UHFFFAOYSA-N 0.000 description 1
- KRIMXCDMVRMCTC-UHFFFAOYSA-N 2-methylhexan-2-ol Chemical compound CCCCC(C)(C)O KRIMXCDMVRMCTC-UHFFFAOYSA-N 0.000 description 1
- RGRUUTLDBCWYBL-UHFFFAOYSA-N 2-methylhexan-3-ol Chemical compound CCCC(O)C(C)C RGRUUTLDBCWYBL-UHFFFAOYSA-N 0.000 description 1
- LASHFHLFDRTERB-UHFFFAOYSA-N 2-propylpentan-1-ol Chemical compound CCCC(CO)CCC LASHFHLFDRTERB-UHFFFAOYSA-N 0.000 description 1
- BODRLKRKPXBDBN-UHFFFAOYSA-N 3,5,5-Trimethyl-1-hexanol Chemical compound OCCC(C)CC(C)(C)C BODRLKRKPXBDBN-UHFFFAOYSA-N 0.000 description 1
- YNOPIKHMZIOWHS-UHFFFAOYSA-N 3,5-bis(trifluoromethyl)benzamide Chemical compound NC(=O)C1=CC(C(F)(F)F)=CC(C(F)(F)F)=C1 YNOPIKHMZIOWHS-UHFFFAOYSA-N 0.000 description 1
- DLHQZZUEERVIGQ-UHFFFAOYSA-N 3,7-dimethyl-3-octanol Chemical compound CCC(C)(O)CCCC(C)C DLHQZZUEERVIGQ-UHFFFAOYSA-N 0.000 description 1
- NMRPBPVERJPACX-QMMMGPOBSA-N 3-Octanol Natural products CCCCC[C@@H](O)CC NMRPBPVERJPACX-QMMMGPOBSA-N 0.000 description 1
- GAGJMOQGABUOBK-UHFFFAOYSA-N 3-aminopropanamide;hydrochloride Chemical compound Cl.NCCC(N)=O GAGJMOQGABUOBK-UHFFFAOYSA-N 0.000 description 1
- DBIVLAVBOICUQX-UHFFFAOYSA-N 3-bromopropanamide Chemical compound NC(=O)CCBr DBIVLAVBOICUQX-UHFFFAOYSA-N 0.000 description 1
- FYWDUQCSMYWUHV-UHFFFAOYSA-N 3-chloro-5-hydroxypentan-2-one Chemical compound CC(=O)C(Cl)CCO FYWDUQCSMYWUHV-UHFFFAOYSA-N 0.000 description 1
- HEQYMZTUSVDQBW-UHFFFAOYSA-N 3-ethyl-2,2-dimethylpentan-1-ol Chemical compound CCC(CC)C(C)(C)CO HEQYMZTUSVDQBW-UHFFFAOYSA-N 0.000 description 1
- XKIRHOWVQWCYBT-UHFFFAOYSA-N 3-ethylpentan-3-ol Chemical compound CCC(O)(CC)CC XKIRHOWVQWCYBT-UHFFFAOYSA-N 0.000 description 1
- ZXNBBWHRUSXUFZ-UHFFFAOYSA-N 3-methyl-2-pentanol Chemical compound CCC(C)C(C)O ZXNBBWHRUSXUFZ-UHFFFAOYSA-N 0.000 description 1
- OIBKGNPMOMMSSI-UHFFFAOYSA-N 4,4-dimethylpentan-2-ol Chemical compound CC(O)CC(C)(C)C OIBKGNPMOMMSSI-UHFFFAOYSA-N 0.000 description 1
- DTDMYWXTWWFLGJ-JTQLQIEISA-N 4-Decanol Natural products CCCCCC[C@@H](O)CCC DTDMYWXTWWFLGJ-JTQLQIEISA-N 0.000 description 1
- CAERPAFTLPIDJT-UHFFFAOYSA-N 4-amino-2,3,5,6-tetrafluorobenzamide Chemical compound NC(=O)C1=C(F)C(F)=C(N)C(F)=C1F CAERPAFTLPIDJT-UHFFFAOYSA-N 0.000 description 1
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 1
- PCWGTDULNUVNBN-UHFFFAOYSA-N 4-methylpentan-1-ol Chemical compound CC(C)CCCO PCWGTDULNUVNBN-UHFFFAOYSA-N 0.000 description 1
- ZVHAANQOQZVVFD-UHFFFAOYSA-N 5-methylhexan-1-ol Chemical compound CC(C)CCCCO ZVHAANQOQZVVFD-UHFFFAOYSA-N 0.000 description 1
- ZDVJGWXFXGJSIU-UHFFFAOYSA-N 5-methylhexan-2-ol Chemical compound CC(C)CCC(C)O ZDVJGWXFXGJSIU-UHFFFAOYSA-N 0.000 description 1
- UJTTUOLQLCQZEA-UHFFFAOYSA-N 9h-fluoren-9-ylmethyl n-(4-hydroxybutyl)carbamate Chemical compound C1=CC=C2C(COC(=O)NCCCCO)C3=CC=CC=C3C2=C1 UJTTUOLQLCQZEA-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- GVNWZKBFMFUVNX-UHFFFAOYSA-N Adipamide Chemical compound NC(=O)CCCCC(N)=O GVNWZKBFMFUVNX-UHFFFAOYSA-N 0.000 description 1
- 239000004156 Azodicarbonamide Substances 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- HXQPUEQDBSPXTE-UHFFFAOYSA-N Diisobutylcarbinol Chemical compound CC(C)CC(O)CC(C)C HXQPUEQDBSPXTE-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- RYECOJGRJDOGPP-UHFFFAOYSA-N Ethylurea Chemical compound CCNC(N)=O RYECOJGRJDOGPP-UHFFFAOYSA-N 0.000 description 1
- 229910005555 GaZnO Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- YIKSCQDJHCMVMK-UHFFFAOYSA-N Oxamide Chemical compound NC(=O)C(N)=O YIKSCQDJHCMVMK-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical class OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FIAINKIUSZGVGX-DKWTVANSSA-N [(2s)-1-amino-1-oxopropan-2-yl]azanium;chloride Chemical compound Cl.C[C@H](N)C(N)=O FIAINKIUSZGVGX-DKWTVANSSA-N 0.000 description 1
- IUNNCDSJWDQYPW-DJWKRKHSSA-N [(z)-ethylideneamino]urea Chemical compound C\C=N/NC(N)=O IUNNCDSJWDQYPW-DJWKRKHSSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- 150000008051 alkyl sulfates Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- XOZUGNYVDXMRKW-AATRIKPKSA-N azodicarbonamide Chemical compound NC(=O)\N=N\C(N)=O XOZUGNYVDXMRKW-AATRIKPKSA-N 0.000 description 1
- 235000019399 azodicarbonamide Nutrition 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- RJNJWHFSKNJCTB-UHFFFAOYSA-N benzylurea Chemical compound NC(=O)NCC1=CC=CC=C1 RJNJWHFSKNJCTB-UHFFFAOYSA-N 0.000 description 1
- OHJMTUPIZMNBFR-UHFFFAOYSA-N biuret Chemical compound NC(=O)NC(N)=O OHJMTUPIZMNBFR-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- JQOLMUGUXNNIOR-UHFFFAOYSA-N butyl 2-amino-2-oxoacetate Chemical compound CCCCOC(=O)C(N)=O JQOLMUGUXNNIOR-UHFFFAOYSA-N 0.000 description 1
- SKKTUOZKZKCGTB-UHFFFAOYSA-N butyl carbamate Chemical compound CCCCOC(N)=O SKKTUOZKZKCGTB-UHFFFAOYSA-N 0.000 description 1
- MSZJEPVVQWJCIF-UHFFFAOYSA-N butylazanide Chemical compound CCCC[NH-] MSZJEPVVQWJCIF-UHFFFAOYSA-N 0.000 description 1
- CNWSQCLBDWYLAN-UHFFFAOYSA-N butylurea Chemical compound CCCCNC(N)=O CNWSQCLBDWYLAN-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- VXIVSQZSERGHQP-UHFFFAOYSA-N chloroacetamide Chemical compound NC(=O)CCl VXIVSQZSERGHQP-UHFFFAOYSA-N 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- DGJMPUGMZIKDRO-UHFFFAOYSA-N cyanoacetamide Chemical compound NC(=O)CC#N DGJMPUGMZIKDRO-UHFFFAOYSA-N 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- WUESWDIHTKHGQA-UHFFFAOYSA-N cyclohexylurea Chemical compound NC(=O)NC1CCCCC1 WUESWDIHTKHGQA-UHFFFAOYSA-N 0.000 description 1
- AIMMVWOEOZMVMS-UHFFFAOYSA-N cyclopropanecarboxamide Chemical compound NC(=O)C1CC1 AIMMVWOEOZMVMS-UHFFFAOYSA-N 0.000 description 1
- ACUZDYFTRHEKOS-UHFFFAOYSA-N decan-2-ol Chemical compound CCCCCCCCC(C)O ACUZDYFTRHEKOS-UHFFFAOYSA-N 0.000 description 1
- DTDMYWXTWWFLGJ-UHFFFAOYSA-N decan-4-ol Chemical compound CCCCCCC(O)CCC DTDMYWXTWWFLGJ-UHFFFAOYSA-N 0.000 description 1
- 125000005265 dialkylamine group Chemical group 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 229950001902 dimevamide Drugs 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- RZMZBHSKPLVQCP-UHFFFAOYSA-N ethyl 2-amino-2-oxoacetate Chemical compound CCOC(=O)C(N)=O RZMZBHSKPLVQCP-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- NVVZQXQBYZPMLJ-UHFFFAOYSA-N formaldehyde;naphthalene-1-sulfonic acid Chemical compound O=C.C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 NVVZQXQBYZPMLJ-UHFFFAOYSA-N 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- ALBYIUDWACNRRB-UHFFFAOYSA-N hexanamide Chemical compound CCCCCC(N)=O ALBYIUDWACNRRB-UHFFFAOYSA-N 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- HVDZMISZAKTZFP-UHFFFAOYSA-N indium(3+) trinitrate trihydrate Chemical compound O.O.O.[In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HVDZMISZAKTZFP-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- SXQFCVDSOLSHOQ-UHFFFAOYSA-N lactamide Chemical compound CC(O)C(N)=O SXQFCVDSOLSHOQ-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- WRIRWRKPLXCTFD-UHFFFAOYSA-N malonamide Chemical compound NC(=O)CC(N)=O WRIRWRKPLXCTFD-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- QHDUJTCUPWHNPK-UHFFFAOYSA-N methyl 7-methoxy-2h-indazole-3-carboxylate Chemical compound COC1=CC=CC2=C(C(=O)OC)NN=C21 QHDUJTCUPWHNPK-UHFFFAOYSA-N 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QJGRPCPCQQPZLZ-UHFFFAOYSA-N n-carbamoyl-2-cyanoacetamide Chemical compound NC(=O)NC(=O)CC#N QJGRPCPCQQPZLZ-UHFFFAOYSA-N 0.000 description 1
- GKRZNOGGALENQJ-UHFFFAOYSA-N n-carbamoylacetamide Chemical compound CC(=O)NC(N)=O GKRZNOGGALENQJ-UHFFFAOYSA-N 0.000 description 1
- XBXCNNQPRYLIDE-UHFFFAOYSA-M n-tert-butylcarbamate Chemical compound CC(C)(C)NC([O-])=O XBXCNNQPRYLIDE-UHFFFAOYSA-M 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- CMUOJBJRZUHRMU-UHFFFAOYSA-N nitrourea Chemical compound NC(=O)N[N+]([O-])=O CMUOJBJRZUHRMU-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- IPWFJLQDVFKJDU-UHFFFAOYSA-N pentanamide Chemical compound CCCCC(N)=O IPWFJLQDVFKJDU-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- NAYYNDKKHOIIOD-UHFFFAOYSA-N phthalamide Chemical compound NC(=O)C1=CC=CC=C1C(N)=O NAYYNDKKHOIIOD-UHFFFAOYSA-N 0.000 description 1
- XIPFMBOWZXULIA-UHFFFAOYSA-N pivalamide Chemical compound CC(C)(C)C(N)=O XIPFMBOWZXULIA-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- OVPLZYJGTGDFNB-UHFFFAOYSA-N propan-2-yl carbamate Chemical compound CC(C)OC(N)=O OVPLZYJGTGDFNB-UHFFFAOYSA-N 0.000 description 1
- QLNJFJADRCOGBJ-UHFFFAOYSA-N propionamide Chemical compound CCC(N)=O QLNJFJADRCOGBJ-UHFFFAOYSA-N 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- JDVPQXZIJDEHAN-UHFFFAOYSA-N succinamic acid Chemical compound NC(=O)CCC(O)=O JDVPQXZIJDEHAN-UHFFFAOYSA-N 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 125000005270 trialkylamine group Chemical group 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Description
本発明は、新規な薄膜トランジスタ及びその製造方法に関する。 The present invention relates to a novel thin film transistor and a method for manufacturing the same.
従来の蒸着法、スパッタ法やＣＶＤ法といった成膜技術に代えて、塗布法による金属酸化物半導体層の成膜を行った薄膜トランジスタの製造方法が近年提案されている（例えば特許文献１～特許文献３）。In recent years, methods for manufacturing thin-film transistors have been proposed in which a metal oxide semiconductor layer is formed by a coating method instead of conventional film formation techniques such as vapor deposition, sputtering, and CVD (for example, Patent Documents 1 to 3).
塗布法による成膜は、スパッタ法等の真空系の成膜装置を用いる従来法と比べて、より簡易な構成（工程、装置）で、また低コストにての成膜を実現でき、高い生産性に加え、大面積にての成膜やより複雑なパターンにての成膜をも可能とする点で有望視されている。そのため、半導体層の成膜のみならず、薄膜トランジスタを構成する各層の成膜においても塗布法の適用が検討されている。
しかし、一般に、塗布法によって成膜・製造された薄膜トランジスタにおいては、半導体層の形成時に使用する前駆体に由来する不純物の存在、不完全な金属酸化物の形成、さらにはチャネル層の活性化が難しい等の種々の要因により、高い移動度を有するチャネル層、ひいては薄膜トランジスタを実現することは難しい。
Compared with conventional methods using vacuum deposition equipment such as sputtering, coating methods are promising because they can achieve deposition with a simpler configuration (steps, equipment) and at a lower cost, and because they are more productive and allow deposition over a large area and in more complicated patterns. Therefore, the application of coating methods is being considered not only for deposition of semiconductor layers, but also for deposition of each layer constituting a thin film transistor.
However, in general, in thin film transistors formed and manufactured by a coating method, it is difficult to realize a channel layer having high mobility, and thus a thin film transistor, due to various factors such as the presence of impurities derived from the precursors used in forming the semiconductor layer, the formation of incomplete metal oxides, and further, difficulty in activating the channel layer.
本発明は、１２ｃｍ２／Ｖｓ以上、好ましくは１８ｃｍ２／Ｖｓ以上という高い移動度を有するトップゲート型薄膜トランジスタ、並びに、高移動度を実現するトップゲート型薄膜トランジスタの製造方法の提供を課題とする。 An object of the present invention is to provide a top-gate thin-film transistor having a high mobility of 12 cm 2 /Vs or more, preferably 18 cm 2 /Vs or more, and a method for manufacturing a top-gate thin-film transistor that achieves high mobility.
本発明者らは、上記の課題を解決するべく鋭意研究を重ねた結果、金属酸化物半導体層に対して、エキシマレーザー光照射又はＹＡＧレーザー光照射を実施する、特にＵＶ光照射とエキシマレーザー光照射又はＹＡＧレーザー光照射とを組みわせて実施したところ、金属酸化物半導体層を電極（導体）に変換するとともに、金属酸化物半導体層を移動度の高いチャネル層に変換でき、高移動度のトップゲート型薄膜トランジスタとなることを見出し、本発明を完成させた。As a result of extensive research conducted by the inventors to solve the above problems, they discovered that by irradiating a metal oxide semiconductor layer with excimer laser light or YAG laser light, particularly by combining UV light irradiation with excimer laser light or YAG laser light, the metal oxide semiconductor layer can be converted into an electrode (conductor) and also into a high mobility channel layer, resulting in a high mobility top-gate thin film transistor, and thus completed the present invention.
すなわち本発明は、第１観点として、１２ｃｍ２／Ｖｓ以上の移動度を有するトップゲート型薄膜トランジスタに関する。
第２観点として、移動度が１８ｃｍ２／Ｖｓ以上である、第１観点に記載のトップゲート型薄膜トランジスタに関する。
第３観点として、トップゲート型薄膜トランジスタが、トップコンタクト式又はボトムコンタクト式である、第１観点又は第２観点に記載のトップゲート型薄膜トランジスタに関する。
第４観点として、トップゲート型薄膜トランジスタが、フッ素を含むポリシロキサン膜をゲート絶縁膜として有するものである、第１観点乃至第３観点のうちいずれか一項に記載のトップゲート型薄膜トランジスタに関する。
第５観点として、ガラス基板、シリコン基板、又はフレキシブル基板上に形成された薄膜トランジスタである、第１観点乃至第４観点のうちいずれか一項に記載のトップゲート型薄膜トランジスタに関する。
第６観点として、該薄膜トランジスタが金属酸化物半導体層を含み、該金属酸化物半導体層が、インジウム、スズ、亜鉛、ガリウム、及びアルミニウムからなる群から選ばれる少なくとも１種の金属原子の酸化物を含む、第１観点乃至第５観点のうちいずれか一項に記載のトップゲート型薄膜トランジスタに関する。
第７観点として、前記金属酸化物半導体層が、酸化インジウムガリウム亜鉛、酸化インジウムガリウム、酸化インジウムスズ亜鉛、酸化ガリウム亜鉛、酸化インジウムスズ、酸化インジウム亜鉛、酸化スズ亜鉛、酸化亜鉛、及び酸化スズからなる群から選ばれる少なくとも１種の金属酸化物を含む層である、第６観点に記載のトップゲート型薄膜トランジスに関するタ。
第８観点として、下記（Ａ）工程から（Ｅ）工程を含む、トップゲート型薄膜トランジスタの製造方法。
（Ａ）工程：基板上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ａ）を形成し、該層（ａ）のパターニングとエッチングを行う工程、
（Ｂ）工程：パターニング及びエッチングされた金属酸化物半導体層（ａ）上に、絶縁層（ｂ）を形成し、該層（ｂ）の上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ｃ）を形成する工程、
（Ｃ）工程：金属酸化物半導体層（ｃ）のパターニングとエッチングを行う工程、
（Ｄ）工程：パターニング及びエッチングされた金属酸化物半導体層（ｃ）をマスクパターンとして下層の絶縁層（ｂ）をエッチングする工程、
（Ｅ）工程：基板の上方からエキシマレーザー光又はＹＡＧレーザー光を照射する工程
を含むトップゲート型薄膜トランジスタの製造方法に関する。
第９観点として、（Ｂ）工程で形成する絶縁層（ｂ）がフッ素を含むポリシロキサン膜である、第８観点に記載のトップゲート型薄膜トランジスタの製造方法に関する。
第１０観点として、（Ｅ）工程が、基板の上方からＵＶ光と、エキシマレーザー光又はＹＡＧレーザー光をともに照射する（Ｅ’）工程である、第８観点又は第９観点に記載のトップゲート型薄膜トランジスタの製造方法に関する。
第１１観点として、（Ｅ）工程が、基板の上方からＵＶ光を照射した後、エキシマレーザー光又はＹＡＧレーザー光を照射する（Ｅ”）工程である、第８観点又は第９観点に記載のトップゲート型薄膜トランジスタの製造方法に関する。
第１２観点として、前記金属酸化物半導体層形成用組成物が、金属塩と第一アミド化合物と水を主体とする溶媒とを含む、第８観点乃至第１１観点のうちいずれか一項に記載のトップゲート型薄膜トランジスタの製造方法に関する。
第１３観点として、前記（Ａ）工程及び（Ｂ）工程において、同一又は異なる条件及び手順で、金属酸化物半導体層形成用組成物をスピンコートにて塗布し、１１０℃～１８０℃で０．１分間～３０分間熱処理する、塗布及び熱処理の操作を１回～１０回繰り返し行った後、２５０℃～３５０℃で０．１時間～１２０時間焼成する加熱を行うことにより、前記金属酸化物半導体層（ａ）及び金属酸化物半導体層（ｃ）をそれぞれ形成する、
第８観点乃至第１２観点のうちいずれか一項に記載のトップゲート型薄膜トランジスタの製造方法に関する。
第１４観点として、前記（Ｅ）工程において、波長１５０ｎｍ～３８０ｎｍのエキシマレーザー光を５０ｍＪ／ｃｍ２～１５０ｍＪ／ｃｍ２にて１ナノ秒間～１２０ナノ秒間照射する、
第８観点乃至第１３観点のうち何れか一項に記載のトップゲート型薄膜トランジスタの製造方法に関する。
第１５観点として、前記（Ｅ）工程において、波長２５０ｎｍ～４００ｎｍのＹＡＧレーザー光を５０ｍＪ／ｃｍ２～１５０ｍＪ／ｃｍ２にて１ナノ秒間～１２０ナノ秒間照射する、
第８観点乃至第１３観点のうち何れか一項に記載のトップゲート型薄膜トランジスタの製造方法に関する。
第１６観点として、前記（Ｅ）工程において、波長１５０ｎｍ～３５０ｎｍのＵＶ光を１分間～１２０分間照射する、
第１０観点至第１５観点のうち何れか一項に記載のトップゲート型薄膜トランジスタの製造方法に関する。
That is, a first aspect of the present invention relates to a top-gate thin film transistor having a mobility of 12 cm 2 /Vs or more.
A second aspect relates to the top-gate thin film transistor according to the first aspect, which has a mobility of 18 cm 2 /Vs or more.
As a third aspect, the present invention relates to the top-gate thin film transistor according to the first or second aspect, in which the top-gate thin film transistor is of a top-contact type or a bottom-contact type.
As a fourth aspect, the present invention relates to a top-gate thin-film transistor according to any one of the first to third aspects, in which the top-gate thin-film transistor has a fluorine-containing polysiloxane film as a gate insulating film.
A fifth aspect relates to the top-gate thin-film transistor according to any one of the first to fourth aspects, which is a thin-film transistor formed on a glass substrate, a silicon substrate, or a flexible substrate.
As a sixth aspect, the present invention relates to the top-gate thin film transistor according to any one of the first to fifth aspects, wherein the thin film transistor includes a metal oxide semiconductor layer, and the metal oxide semiconductor layer includes an oxide of at least one metal atom selected from the group consisting of indium, tin, zinc, gallium, and aluminum.
As a seventh aspect, the present invention relates to the top-gate thin film transistor according to the sixth aspect, wherein the metal oxide semiconductor layer is a layer containing at least one metal oxide selected from the group consisting of indium gallium zinc oxide, indium gallium oxide, indium tin zinc oxide, gallium zinc oxide, indium tin oxide, indium zinc oxide, tin zinc oxide, zinc oxide, and tin oxide.
As an eighth aspect, there is provided a method for manufacturing a top-gate thin film transistor, the method including the following steps (A) to (E):
Step (A): a step of applying a composition for forming a metal oxide semiconductor layer on a substrate, baking the composition, forming a metal oxide semiconductor layer (a), and patterning and etching the layer (a);
Step (B): forming an insulating layer (b) on the patterned and etched metal oxide semiconductor layer (a), and applying a metal oxide semiconductor layer-forming composition onto the insulating layer (b) and baking the composition to form a metal oxide semiconductor layer (c);
Step (C): A step of patterning and etching the metal oxide semiconductor layer (c);
Step (D): Etching the underlying insulating layer (b) using the patterned and etched metal oxide semiconductor layer (c) as a mask pattern;
The present invention relates to a method for producing a top-gate type thin film transistor, which includes step (E) of irradiating a substrate with excimer laser light or YAG laser light from above the substrate.
As a ninth aspect, the present invention relates to the method for producing a top-gate thin film transistor as defined in the eighth aspect, in which the insulating layer (b) formed in the step (B) is a polysiloxane film containing fluorine.
As a tenth aspect, the present invention relates to a method for manufacturing a top-gate thin film transistor according to the eighth or ninth aspect, in which the step (E) is a step (E') of irradiating the substrate from above with both UV light and excimer laser light or YAG laser light.
As an eleventh aspect, the present invention relates to the method for manufacturing a top-gate thin film transistor according to the eighth or ninth aspect, wherein the step (E) is a step (E″) of irradiating the substrate from above with UV light, and then irradiating the substrate with excimer laser light or YAG laser light.
As a twelfth aspect, the present invention relates to the method for producing a top-gate thin film transistor according to any one of the eighth to eleventh aspects, in which the composition for forming a metal oxide semiconductor layer contains a metal salt, a first amide compound, and a solvent mainly containing water.
As a thirteenth aspect, in the steps (A) and (B), a composition for forming a metal oxide semiconductor layer is applied by spin coating under the same or different conditions and procedures, and heat-treated at 110° C. to 180° C. for 0.1 to 30 minutes. This operation of application and heat treatment is repeated once to ten times, and then baking is performed at 250° C. to 350° C. for 0.1 to 120 hours, thereby forming the metal oxide semiconductor layer (a) and the metal oxide semiconductor layer (c), respectively.
The present invention relates to a method for manufacturing the top-gate thin film transistor according to any one of the eighth to twelfth aspects.
As a fourteenth aspect, in the step (E), an excimer laser beam having a wavelength of 150 nm to 380 nm is irradiated at 50 mJ/cm 2 to 150 mJ/cm 2 for 1 nanosecond to 120 nanoseconds.
The present invention relates to a method for manufacturing the top-gate thin film transistor according to any one of the eighth to thirteenth aspects.
As a fifteenth aspect, in the step (E), a YAG laser beam having a wavelength of 250 nm to 400 nm is irradiated at 50 mJ/cm 2 to 150 mJ/cm 2 for 1 nanosecond to 120 nanoseconds.
The present invention relates to a method for manufacturing the top-gate thin film transistor according to any one of the eighth to thirteenth aspects.
As a sixteenth aspect, in the step (E), UV light having a wavelength of 150 nm to 350 nm is irradiated for 1 minute to 120 minutes.
The present invention relates to a method for manufacturing a top-gate thin film transistor according to any one of the tenth to fifteenth aspects.
本発明によれば、１２ｃｍ２／Ｖｓ以上、１８ｃｍ２／Ｖｓ以上、２０ｃｍ２／Ｖｓ以上、３０ｃｍ２／Ｖｓ以上であり、例えば１２ｃｍ２／Ｖｓ～８０ｃｍ２／Ｖｓ、１２ｃｍ２／Ｖｓ～７０ｃｍ２／Ｖｓ、１２ｃｍ２／Ｖｓ～６０ｃｍ２／Ｖｓ、１８ｃｍ２／Ｖｓ～８０ｃｍ２／Ｖｓ、１８ｃｍ２／Ｖｓ～７０ｃｍ２／Ｖｓ、１８ｃｍ２／Ｖｓ～６０ｃｍ２／Ｖｓ、１８ｃｍ２／Ｖｓ～５０ｃｍ２／Ｖｓ、１８ｃｍ２／Ｖｓ～５０ｃｍ２／Ｖｓ、２０ｃｍ２／Ｖｓ～８０ｃｍ２／Ｖｓ、２０ｃｍ２／Ｖｓ～７０ｃｍ２／Ｖｓ、２０ｃｍ２／Ｖｓ～６０ｃｍ２／Ｖｓ、３０ｃｍ２／Ｖｓ～８０ｃｍ２／Ｖｓ、３０ｃｍ２／Ｖｓ～７０ｃｍ２／Ｖｓ、３０ｃｍ２／Ｖｓ～６０ｃｍ２／Ｖｓ、３０ｃｍ２／Ｖｓ～５０ｃｍ２／Ｖｓ、３０ｃｍ２／Ｖｓ～５０ｃｍ２／Ｖｓの範囲の高移動度を有するトップゲート型薄膜トランジスタを提供することができる。
また本発明の製造方法によれば、エキシマレーザー光照射又はＹＡＧレーザー光照射により金属酸化物半導体層を活性化して、移動度の高いチャネル層に変換することにより、さらには金属酸化物半導体層をＵＶ光照射することで導体（電極）に変換することによって、高移動度のトップゲート型薄膜トランジスタを製造できる。
According to the present invention, the surface area is 12 cm 2 /Vs or more, 18 cm 2 /Vs or more, 20 cm 2 /Vs or more, or 30 cm 2 /Vs or more, for example, 12 cm 2 /Vs to 80 cm 2 /Vs, 12 cm 2 /Vs to 70 cm 2 /Vs, 12 cm 2 /Vs to 60 cm 2 /Vs, 18 cm 2 /Vs to 80 cm 2 /Vs, 18 cm 2 /Vs to 70 cm 2 /Vs, 18 cm 2 /Vs to 60 cm 2 /Vs, 18 cm 2 /Vs to 50 cm 2 /Vs, 18 cm 2 /Vs to 50 cm 2 /Vs, 20 cm 2 /Vs to 80 cm 2 /Vs, 20 cm 2 /Vs to 70 cm 2 /Vs. It is possible to provide top-gate thin film transistors having high mobility in the ranges of 20 cm 2 /Vs to 60 cm 2 /Vs, 30 cm 2 /Vs to 80 cm 2 /Vs, 30 cm 2 /Vs to 70 cm 2 /Vs, 30 cm 2 /Vs to 60 cm 2 /Vs, 30 cm 2 /Vs to 50 cm 2 /Vs, and 30 cm 2 /Vs to 50 cm 2 /Vs.
Furthermore, according to the manufacturing method of the present invention, a metal oxide semiconductor layer is activated by irradiation with excimer laser light or YAG laser light to convert it into a channel layer with high mobility, and further, the metal oxide semiconductor layer is converted into a conductor (electrode) by irradiating it with UV light, thereby making it possible to manufacture a top-gate type thin film transistor with high mobility.
［トップゲート型薄膜トランジスタ］
本発明が対象とする薄膜トランジスタ（ＴＦＴ）は、１２ｃｍ２／Ｖｓ以上、好ましくは１８ｃｍ２／Ｖｓ以上の移動度を有するトップゲート型薄膜トランジスタである。例えば、本発明が対象とするトップゲート型薄膜トランジスタは、１２ｃｍ２／Ｖｓ～６０ｃｍ２／Ｖｓ、１８ｃｍ２／Ｖｓ～５０ｃｍ２／Ｖｓ、又は１８ｃｍ２／Ｖｓ～４０ｃｍ２／Ｖｓの範囲といった高い移動度を得られる。
薄膜トランジスタ（ＴＦＴ）は半導体と電極（導体）の位置関係によって構造分類され、本発明が対象とする、ゲート電極が半導体層の上側に配置されるトップゲート型薄膜トランジスタには、ソース電極とドレイン電極が半導体層の上側に配置される構造のトップコンタクト式と、これら電極が半導体層の下側に配置される構造のボトムコンタクト式がある。本発明のトップゲート型薄膜トランジスタは、トップコンタクト式及びボトムコンタク式の双方の態様を包含する。
[Top-gate thin-film transistor]
The thin film transistor (TFT) of the present invention is a top-gate type thin film transistor having a mobility of 12 cm 2 /Vs or more, preferably 18 cm 2 /Vs or more. For example, the top-gate type thin film transistor of the present invention can have a high mobility in the range of 12 cm 2 /Vs to 60 cm 2 /Vs, 18 cm 2 /Vs to 50 cm 2 /Vs, or 18 cm 2 /Vs to 40 cm 2 /Vs.
Thin film transistors (TFTs) are classified by their structures according to the positional relationship between the semiconductor and the electrodes (conductors), and the top-gate thin film transistors of the present invention, in which the gate electrode is disposed above the semiconductor layer, are classified into top-contact types in which the source electrode and the drain electrode are disposed above the semiconductor layer, and bottom-contact types in which these electrodes are disposed below the semiconductor layer. The top-gate thin film transistor of the present invention encompasses both top-contact and bottom-contact types.
図６に、一般的なトップゲート型薄膜トランジスタの一例を示す模式図として、トップコンタクト式（図６（ａ））の構造の断面図と、ボトムコンタクト式（図６（ｂ））の構造の断面図をそれぞれ示す。
図６（ａ）の例では、基板１上に半導体層２（チャネル２ａ）が形成され、半導体層２上にドレイン電極３とソース電極４が形成されている。そしてゲート絶縁膜５は、半導体層２とドレイン電極３とソース電極４の上に形成され、その上にゲート電極６が設置された構成となっている。
また図６（ｂ）の例では、基板１上に、ドレイン電極３とソース電極４が形成され、これら電極を覆うように半導体層２（チャネル２ａ）が形成されている。そして半導体層２上にゲート絶縁膜５が形成され、その上にゲート電極６が設置された構成となっている。
FIG. 6 is a schematic diagram showing an example of a general top-gate thin-film transistor, showing a cross-sectional view of a top-contact type structure (FIG. 6(a)) and a cross-sectional view of a bottom-contact type structure (FIG. 6(b)).
6(a), a semiconductor layer 2 (channel 2a) is formed on a substrate 1, and a drain electrode 3 and a source electrode 4 are formed on the semiconductor layer 2. A gate insulating film 5 is formed on the semiconductor layer 2, the drain electrode 3, and the source electrode 4, and a gate electrode 6 is provided thereon.
6(b), a drain electrode 3 and a source electrode 4 are formed on a substrate 1, and a semiconductor layer 2 (channel 2a) is formed to cover these electrodes. A gate insulating film 5 is formed on the semiconductor layer 2, and a gate electrode 6 is provided on the gate insulating film 5.
薄膜トランジスタが形成される基板としては特に限定されず、例えばシリコン基板、金属基板、ガリウム基板、透明電極基板、有機薄膜基板、プラスチック基板、ガラス基板等が挙げられる。より具体的には、例えば、ポリイミド、ポリカーボネート、ポリエチレンテレフタレート、ポリエチレンナフタレートなどのプラスチックフィルム、ステンレス箔、ガラス等が挙げられる。また、配線層やトランジスタ等の回路素子が形成された半導体基板等であってもよい。さらに屈曲可能な基板（例えばフレキシブル基板）等であってもよい。中でも、ガラス基板、シリコン基板、フレキシブル基板等を好適に用いることができる。The substrate on which the thin film transistor is formed is not particularly limited, and examples thereof include a silicon substrate, a metal substrate, a gallium substrate, a transparent electrode substrate, an organic thin film substrate, a plastic substrate, a glass substrate, etc. More specifically, examples thereof include plastic films such as polyimide, polycarbonate, polyethylene terephthalate, and polyethylene naphthalate, stainless steel foil, and glass. The substrate may also be a semiconductor substrate on which a wiring layer and circuit elements such as transistors are formed. The substrate may also be a bendable substrate (e.g., a flexible substrate). Among these, glass substrates, silicon substrates, flexible substrates, etc. can be preferably used.
本発明の薄膜トランジスタでは、半導体層として金属酸化物半導体層を含み、該半導体層は、例えば、Ｌｉ、Ｂｅ、Ｂ、Ｎａ、Ｍｇ、Ａｌ、Ｓｉ、Ｋ、Ｃａ、Ｓｃ、Ｔｉ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ、Ｇａ、Ｇｅ、Ｒｂ、Ｓｒ、Ｙ、Ｚｒ、Ｎｂ、Ｍｏ、Ｃｄ、Ｉｎ、Ｉｒ、Ｓｎ、Ｓｂ、Ｃｓ、Ｂａ、Ｌａ、Ｈｆ、Ｔａ、Ｗ、Ｔｌ、Ｐｂ、Ｂｉ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、及びＬｕからなる群から選ばれる少なくとも１種の金属原子の酸化物を含む。好ましくは、上記金属酸化物半導体層は、インジウム（Ｉｎ）、スズ（Ｓｎ）、亜鉛（Ｚｎ）、ガリウム（Ｇａ）、及びアルミニウム（Ａｌ）からなる群から選ばれる少なくとも１種の金属原子の酸化物を含む。
好ましい態様において、上記金属酸化物半導体層は、例えば酸化インジウムガリウム亜鉛、酸化インジウムガリウム、酸化インジウムスズ亜鉛、酸化ガリウム亜鉛、酸化インジウムスズ、酸化インジウム亜鉛、酸化スズ亜鉛、酸化亜鉛、酸化スズ、すなわち例えば、ＩｎＧａＺｎＯｘ、ＩｎＧａＯｘ、ＩｎＳｎＺｎＯｘ、ＧａＺｎＯｘ、ＩｎＳｎＯｘ、ＩｎＺｎＯｘ、ＳｎＺｎＯｘ（いずれもｘ＞０）、ＺｎＯ、ＳｎＯ２等を含む。
上記金属酸化物半導体層は、ＣＶＤ法、スパッタリング法、パルスレーザー堆積法、真空蒸着法などの真空法のほか、後述する塗布法を用いて形成可能である。
なお金属酸化物半導体層は、層形成後にエキシマレーザー光又はＹＡＧレーザー光による照射処理が施されていてもよい。
In the thin film transistor of the present invention, the semiconductor layer includes a metal oxide semiconductor layer, and the semiconductor layer includes at least one oxide of a metal atom selected from the group consisting of, for example, Li, Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Cd, In, Ir, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Tl, Pb, Bi, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Preferably, the metal oxide semiconductor layer includes at least one oxide of a metal atom selected from the group consisting of indium (In), tin (Sn), zinc (Zn), gallium (Ga), and aluminum (Al).
In a preferred embodiment, the metal oxide semiconductor layer includes, for example, indium gallium zinc oxide, indium gallium oxide, indium tin zinc oxide, gallium zinc oxide, indium tin oxide, indium zinc oxide, tin oxide, zinc oxide, tin oxide, i.e., for example, InGaZnOx , InGaOx , InSnZnOx , GaZnOx , InSnOx , InZnOx , SnZnOx (all x>0), ZnO, SnO2 , etc.
The metal oxide semiconductor layer can be formed by a vacuum method such as a CVD method, a sputtering method, a pulsed laser deposition method, or a vacuum evaporation method, as well as a coating method described later.
Note that the metal oxide semiconductor layer may be subjected to irradiation treatment with excimer laser light or YAG laser light after the layer is formed.
薄膜トランジスタに用いられる電極材料（ゲート電極、ソース電極、ドレイン電極の材料）としては、例えば、金、銀、銅、アルミニウム、モリブデン、チタンなどの金属や、Ｍｇ／Ｃｕ、Ｍｇ／Ａｇ、Ｍｇ／Ａｌ、Ｍｇ／Ｉｎ等の合金、ＳｎＯ２、ＩｎＯ２、ＺｎＯ、ＩｎＯ２・ＳｎＯ２（ＩＴＯ）、ＩｎＯ２・ＺｎＯ（ＩＺＯ）、Ｓｂ２Ｏ５・ＳｎＯ２（ＡＴＯ）等の金属酸化物、カーボンブラック、フラーレン類、カーボンナノチューブなどの無機材料、ポリチオフェン、ポリアニリン、ポリピロール、ポリフルオレンおよびこれらの誘導体などの有機π共役ポリマーなどが挙げられる。これらの電極材料は１種類で用いてもよいが、薄膜トランジスタの電界効果移動度の向上、オン／オフ比の向上を目的として、もしくは閾値電圧の制御を目的として、複数の材料を組み合わせて用いてもよい。又、ゲート電極、ソース電極、ドレイン電極のそれぞれにおいて異なる電極材料を用いてもよい。
なおこれら電極の形成方法としては、真空蒸着、スパッタ法などの従来慣用の技術を用いることができ、また製造方法の簡略化のため、スプレーコート法、印刷法、インクジェット法などの塗布法を採用してもよい。また後述するように、本発明では、紫外線照射により金属酸化物半導体層を導体に変換し、電極とすることができる。
Examples of electrode materials (gate electrode, source electrode, drain electrode materials) used in thin film transistors include metals such as gold, silver, copper, aluminum, molybdenum, and titanium, alloys such as Mg/Cu, Mg/Ag, Mg/Al, and Mg/In, metal oxides such as SnO 2 , InO 2 , ZnO, InO 2.SnO 2 (ITO), InO 2.ZnO (IZO), and Sb 2 O 5.SnO 2 (ATO), inorganic materials such as carbon black, fullerenes, and carbon nanotubes, and organic π-conjugated polymers such as polythiophene, polyaniline, polypyrrole, polyfluorene, and derivatives thereof. Although one type of these electrode materials may be used, a combination of a plurality of materials may be used for the purpose of improving the field effect mobility and on/off ratio of the thin film transistor, or for the purpose of controlling the threshold voltage. Also, different electrode materials may be used for each of the gate electrode, source electrode, and drain electrode.
As a method for forming these electrodes, conventional techniques such as vacuum deposition and sputtering can be used, and in order to simplify the manufacturing method, coating methods such as spray coating, printing and inkjet printing may be used. As will be described later, in the present invention, the metal oxide semiconductor layer can be converted into a conductor by ultraviolet irradiation to form an electrode.
また、ゲート絶縁膜としては、例えば、酸化シリコン、窒化シリコン、酸化アルミニウム、酸化ハフニウム、酸化イットリウムなどの無機絶縁膜、ポリイミド、ポリメチルメタクリレート、ポリビニルフェノール、ベンゾシクロブテン、シリコーン（例えばポリシロキサン等）などの有機絶縁膜が挙げられ、これらはハロゲン元素を含んでいてもよい。例えば、フッ素を含むポリシロキサン膜（フッ素変性されたポリシロキサンを含む膜など）をゲート絶縁膜にする事ができる。
ゲート絶縁膜は１種類の膜を単独で用いてもよいが、薄膜トランジスタの電界効果移動度の向上、オン／オフ比の向上を目的として、もしくは閾値電圧の制御を目的として、複数の膜を組み合わせて用いてもよい。
上記ゲート絶縁膜は、真空蒸着、スパッタ法などの従来慣用の技術により形成可能であるが、製造方法の簡略化のため、スプレーコート法、印刷法、インクジェット法などの塗布法も採用でき、また基板としてシリコン基板を用いる場合、ゲート絶縁膜は熱による酸化によっても形成することができる。塗布法の場合は、絶縁膜形成塗布液の基板上への成膜性を改善するために絶縁膜形成塗布液に界面活性剤を含有していてもよい。
Examples of the gate insulating film include inorganic insulating films such as silicon oxide, silicon nitride, aluminum oxide, hafnium oxide, and yttrium oxide, and organic insulating films such as polyimide, polymethyl methacrylate, polyvinylphenol, benzocyclobutene, and silicone (e.g., polysiloxane, etc.), which may contain a halogen element. For example, a polysiloxane film containing fluorine (such as a film containing fluorine-modified polysiloxane) can be used as the gate insulating film.
The gate insulating film may be a single film, or a combination of multiple films may be used for the purpose of improving the field effect mobility and on/off ratio of the thin film transistor, or for the purpose of controlling the threshold voltage.
The gate insulating film can be formed by conventional techniques such as vacuum deposition and sputtering, but in order to simplify the manufacturing method, coating methods such as spray coating, printing, and inkjet can also be used, and when a silicon substrate is used as the substrate, the gate insulating film can also be formed by thermal oxidation. In the case of the coating method, the insulating film forming coating liquid may contain a surfactant in order to improve the film-forming property of the insulating film forming coating liquid on the substrate.
［トップゲート型薄膜トランジスタの製造方法］
本発明のトップゲート型薄膜トランジスタの製造方法は、下記（Ａ）工程から（Ｅ）工程を含む製造方法である。
（Ａ）工程：基板上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ａ）を形成し、該層（ａ）のパターニングとエッチングを行う工程、
（Ｂ）工程：パターニング及びエッチングされた金属酸化物半導体層（ａ）上に、絶縁層（ｂ）を形成し、該層（ｂ）の上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ｃ）を形成する工程、
（Ｃ）工程：金属酸化物半導体層（ｃ）のパターニングとエッチングを行う工程、
（Ｄ）工程：パターニング及びエッチングされた金属酸化物半導体層（ｃ）をマスクパターンとして下層の絶縁層（ｂ）をエッチングする工程、
（Ｅ）工程：基板の上方からエキシマレーザー光又はＹＡＧレーザー光を照射する工程。
また、（Ｅ）工程がＵＶ光と、エキシマレーザー光又はＹＡＧレーザー光を照射する（Ｅ’）工程とすることができる。
そして、（Ｅ）工程がＵＶ光を照射した後、エキシマレーザー光又はＹＡＧレーザー光を照射する（Ｅ”）工程とすることができる。
これら各工程の模式図を図５にそれぞれ示す。
以下、各工程について詳述する。
[Method of manufacturing a top-gate thin-film transistor]
The method for producing a top-gate thin film transistor of the present invention is a production method including the following steps (A) to (E).
Step (A): a step of applying a composition for forming a metal oxide semiconductor layer on a substrate, baking the composition, forming a metal oxide semiconductor layer (a), and patterning and etching the layer (a);
Step (B): forming an insulating layer (b) on the patterned and etched metal oxide semiconductor layer (a), and applying a metal oxide semiconductor layer-forming composition onto the insulating layer (b) and baking the composition to form a metal oxide semiconductor layer (c);
Step (C): A step of patterning and etching the metal oxide semiconductor layer (c);
Step (D): Etching the underlying insulating layer (b) using the patterned and etched metal oxide semiconductor layer (c) as a mask pattern;
Step (E): A step of irradiating the substrate with excimer laser light or YAG laser light from above.
Furthermore, the step (E) may be a step (E') of irradiating with UV light and excimer laser light or YAG laser light.
Then, after the step (E) of irradiating with UV light, a step (E'') of irradiating with excimer laser light or YAG laser light can be performed.
A schematic diagram of each of these steps is shown in FIG.
Each step will be described in detail below.
＜（Ａ）工程＞
本工程は、基板上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ａ）を形成した後、該金属酸化物半導体層（ａ）のパターニングとエッチング行う工程である（図５（Ａ）工程参照）。
金属酸化物半導体層（ａ）を形成する基板としては特に限定されず、例えば薄膜トランジスタが形成される基板として上述した各種基板を挙げることができる。
<Step (A)>
This process is a process in which a metal oxide semiconductor layer (a) is formed by applying a composition for forming a metal oxide semiconductor layer onto a substrate and baking the composition, and then the metal oxide semiconductor layer (a) is patterned and etched (see process in FIG. 5(A)).
The substrate on which the metal oxide semiconductor layer (a) is formed is not particularly limited, and examples thereof include the various substrates mentioned above as substrates on which thin film transistors are formed.
本工程で使用する金属酸化物半導体層形成用組成物として、例えば、金属塩と第一アミド化合物と水を主体とする溶媒とを含む組成物を挙げることができる。The composition for forming the metal oxide semiconductor layer used in this process may be, for example, a composition containing a metal salt, a first amide compound, and a solvent mainly composed of water.
上記第一アミド化合物としては、例えば下記一般式（Ｉ）で表される化合物を挙げることができる。
上記Ｒ１において、水素原子、又は炭素原子数１～６の直鎖状若しくは分枝状のアルキル基が結合した酸素原子とは、－ＯＨ又は－ＯＲ２（Ｒ２は炭素原子数１～６の直鎖状若しくは分枝状のアルキル基）である。
また、水素原子、酸素原子、又は炭素原子数１～６の直鎖状若しくは分枝状のアルキル基が結合した窒素原子とは、例えば、－ＮＨ２、－ＮＨＲ３や、－ＮＲ４Ｒ５（Ｒ３、Ｒ４及びＲ５はそれぞれ独立に炭素原子数１～６の直鎖状若しくは分枝状のアルキル基である）である。
The primary amide compound may, for example, be a compound represented by the following general formula (I).
In the above R 1 , the hydrogen atom or the oxygen atom bonded to a linear or branched alkyl group having 1 to 6 carbon atoms is --OH or --OR 2 (R 2 is a linear or branched alkyl group having 1 to 6 carbon atoms).
Furthermore, the nitrogen atom bonded to a hydrogen atom, an oxygen atom, or a linear or branched alkyl group having 1 to 6 carbon atoms is, for example, -NH2 , -NHR3 , or -NR4R5 (wherein R3 , R4 , and R5 are each independently a linear or branched alkyl group having 1 to 6 carbon atoms).
また上記一般式（Ｉ）で表される化合物に限定されない、第一アミド化合物の具体例としては、アセトアミド、アセチル尿素、アクリルアミド、アジポアミド、アセトアルデヒド セミカルバゾン、アゾジカルボンアミド、４－アミノ－２，３，５，６－テトラフルオロベンズアミド、β－アラニンアミド塩酸塩、Ｌ－アラニンアミド塩酸塩、ベンズアミド、ベンジル尿素、ビ尿素、ビュウレット、ブチルアミド、３－ブロモプロピオンアミド、ブチル尿素、３，５－ビス（トリフルオロメチル）ベンズアミド、カルバミン酸ｔｅｒｔ－ブチル、ヘキサンアミド、カルバミン酸アンモニウム、カルバミン酸エチル、２－クロロアセトアミド、２－クロロエチル尿素、クロトンアミド、２－シアノアセトアミド、カルバミン酸ブチル、カルバミン酸イソプロピル、カルバミン酸メチル、シアノアセチル尿素、シクロプロパンカルボキサミド、シクロヘキシル尿素、２，２－ジクロロアセトアミド、リン酸ジシアンジアミジン、グアニル尿素硫酸塩、１，１－ジメチル尿素、２，２－ジメトキシプロピオンアミド、エチル尿素、フルオロアセトアミド、ホルムアミド、フマルアミド、グリシンアミド塩酸塩、ヒドロキシ尿素、ヒダントイン酸、２－ヒドロキシエチル尿素、ヘプタフルオロブチルアミド、２－ヒドロキシイソブチルアミド、イソ酪酸アミド、乳酸アミド、マレアミド、マロンアミド、１－メチル尿素、ニトロ尿素、オキサミン酸、オキサミン酸エチル、オキサミド、オキサミン酸ヒドラジド、オキサミン酸ブチル、フェニル尿素、フタルアミド、プロピオン酸アミド、ピバル酸アミド、ペンタフルオロベンズアミド、ペンタフルオロプロピオンアミド、セミカルバジド塩酸塩、コハク酸アミド、トリクロロアセトアミド、トリフルオロアセトアミド、硝酸尿素、尿素、バレルアミド等が挙げられる。これらの中でもホルムアミド、尿素、カルバミン酸アンモニウムが好ましい。
これらは１種を用いても、２種以上を組み合わせて用いてもよい。
Specific examples of the first amide compound, which are not limited to the compound represented by the general formula (I), include acetamide, acetyl urea, acrylamide, adipamide, acetaldehyde semicarbazone, azodicarbonamide, 4-amino-2,3,5,6-tetrafluorobenzamide, β-alaninamide hydrochloride, L-alaninamide hydrochloride, benzamide, benzyl urea, biurea, biuret, butylamide, 3-bromopropionamide, butyl urea, 3,5-bis(trifluoromethyl)benzamide, tert-butyl carbamate, hexanamide, ammonium carbamate, ethyl carbamate, 2-chloroacetamide, 2-chloroethyl urea, crotonamide, 2-cyanoacetamide, butyl carbamate, isopropyl carbamate, methyl carbamate, cyanoacetyl urea, cyclopropane carboxamide, cyclohexyl urea, 2,2-dichloroacetamide, dicyandiamide phosphate, and guanylurea sulfate. Examples of suitable urea include 1,1-dimethylurea, 2,2-dimethoxypropionamide, ethylurea, fluoroacetamide, formamide, fumaramide, glycinamide hydrochloride, hydroxyurea, hydantoic acid, 2-hydroxyethylurea, heptafluorobutyramide, 2-hydroxyisobutyramide, isobutyric acid amide, lactic acid amide, maleamide, malonamide, 1-methylurea, nitrourea, oxamic acid, ethyl oxamate, oxamide, oxamic acid hydrazide, butyl oxamate, phenylurea, phthalamide, propionic acid amide, pivalic acid amide, pentafluorobenzamide, pentafluoropropionamide, semicarbazide hydrochloride, succinic acid amide, trichloroacetamide, trifluoroacetamide, urea nitrate, urea, and valeramide. Among these, formamide, urea, and ammonium carbamate are preferred.
These may be used alone or in combination of two or more.
また上記金属塩として、それを構成する金属としては、例えば、Ｌｉ、Ｂｅ、Ｂ、Ｎａ、Ｍｇ、Ａｌ、Ｓｉ、Ｋ、Ｃａ、Ｓｃ、Ｔｉ、Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｚｎ、Ｇａ、Ｇｅ、Ｒｂ、Ｓｒ、Ｙ、Ｚｒ、Ｎｂ、Ｍｏ、Ｃｄ、Ｉｎ、Ｉｒ、Ｓｎ、Ｓｂ、Ｃｓ、Ｂａ、Ｌａ、Ｈｆ、Ｔａ、Ｗ、Ｔｌ、Ｐｂ、Ｂｉ、Ｃｅ、Ｐｒ、Ｎｄ、Ｐｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、及びＬｕからなる群から選ばれる少なくとも１種である。上記に挙げた金属の中でも、インジウム（Ｉｎ）、スズ（Ｓｎ）、亜鉛（Ｚｎ）、ガリウム（Ｇａ）、及びアルミニウム（Ａｌ）からなる群から選ばれる少なくとも１種の金属が好ましく、特にインジウム（Ｉｎ）、スズ（Ｓｎ）、亜鉛（Ｚｎ）のいずれかを含むことが好ましく、更にガリウム（Ｇａ）またはアルミニウム（Ａｌ）を含んでもよい。 The metal constituting the above metal salt is, for example, at least one selected from the group consisting of Li, Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Cd, In, Ir, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Tl, Pb, Bi, Ce, Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Among the metals listed above, at least one metal selected from the group consisting of indium (In), tin (Sn), zinc (Zn), gallium (Ga), and aluminum (Al) is preferred, and it is particularly preferred to contain any one of indium (In), tin (Sn), and zinc (Zn), and may further contain gallium (Ga) or aluminum (Al).
また上記の金属塩は無機酸塩であることが好ましい。無機酸塩としては、例えば、硝酸塩、硫酸塩、リン酸塩、炭酸塩、炭酸水素塩、ホウ酸塩、塩酸塩及びフッ化水素酸塩からなる群から選ばれる少なくとも１種を用いることができる。これらの塩は水和物の形態であってもよい。金属酸化物半導体層形成用組成物を塗布後の加熱処理（焼成）をより低温で行うことができる観点からは、無機酸塩として、塩酸塩、硝酸塩を用いることが好ましい。 The metal salt is preferably an inorganic acid salt. As the inorganic acid salt, for example, at least one selected from the group consisting of nitrates, sulfates, phosphates, carbonates, hydrogencarbonates, borates, hydrochlorides, and hydrofluorides can be used. These salts may be in the form of hydrates. From the viewpoint of being able to carry out the heat treatment (baking) after application of the composition for forming a metal oxide semiconductor layer at a lower temperature, it is preferable to use hydrochlorides and nitrates as the inorganic acid salt.
なお、上記金属酸化物半導体層形成用組成物が複数種の金属を含有する場合、各金属の割合（組成比）は所望の金属酸化物半導体層を形成することができれば特に限定されないが、例えば、Ｉｎや、Ｓｎの金属塩から選ばれる塩に含有される金属（金属Ａ）と、Ｚｎの金属塩から選ばれる塩に含有される金属（金属Ｂ）と、Ｇａや、Ａｌの金属塩に含有される金属（金属Ｃ）とのモル比率が、金属Ａ：金属Ｂ：金属Ｃ＝１：０．０５～１：０～１を満たすことが好ましい。例えば、金属塩として好適な硝酸塩を用いる場合、モル比率が金属Ａ：金属Ｂ：金属Ｃ＝１：０．０５～１：０～１を満たすように、各金属の硝酸塩を、詳しくは後述する水を主成分とした溶媒に溶解し、さらに上記一般式（Ｉ）等の第一アミドが含まれる水溶液として、金属酸化物半導体層形成用組成物を調製すればよい。In addition, when the composition for forming a metal oxide semiconductor layer contains a plurality of metals, the ratio (composition ratio) of each metal is not particularly limited as long as the desired metal oxide semiconductor layer can be formed. For example, it is preferable that the molar ratio of the metal (metal A) contained in a salt selected from metal salts of In and Sn, the metal (metal B) contained in a salt selected from metal salts of Zn, and the metal (metal C) contained in a metal salt of Ga or Al satisfies metal A: metal B: metal C = 1: 0.05 to 1: 0 to 1. For example, when a suitable nitrate salt is used as the metal salt, the nitrate salt of each metal is dissolved in a solvent mainly composed of water, which will be described later in detail, so that the molar ratio satisfies metal A: metal B: metal C = 1: 0.05 to 1: 0 to 1, and the composition for forming a metal oxide semiconductor layer is prepared as an aqueous solution containing a first amide such as the general formula (I) above.
上記金属酸化物半導体層形成用組成物の溶媒は、水を主体とするものである。水を主体とする溶媒とは、すなわち主溶媒、つまり溶媒の５０質量％以上が水である溶媒を意味する。上記金属酸化物半導体層形成用組成物において使用する溶媒は水を主体としていればよく、水のみを溶媒として用いても、水と有機溶媒との混合溶媒を用いてもよい。水以外に含まれる有機溶媒の具体例としては、プロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノプロピルエーテル、メチルエチルケトン、乳酸エチル、シクロヘキサノン、γ－ブチロラクトン、Ｎ－メチル－２－ピロリドン、Ｎ，Ｎ－ジメチルホルムアミド、Ｎ，Ｎ－ジメチルアセトアミド、Ｎ－メチルカプロラクタム、ジメチルスルホキシド、テトラメチル尿素、ピリジン、ジメチルスルホン、ヘキサメチルスルホキシド、メタノール、エタノール、１－プロパノール、イソプロパノール、ｎ－ブタノール、２－ブタノール、ｔｅｒｔ－ブタノール、１－ペンタノール、２－ペンタノール、３－ペンタノール、ｎ－ヘキサノール、シクロヘキサノール、２－メチル－２－ブタノール、３－メチル－２－ブタノール、２－メチル－１－ブタノール、３－メチル－１－ブタノール、２－メチル－１－ペンタノール、２－メチル－２－ペンタノール、２－メチル－３－ペンタノール、３－メチル－１－ペンタノール、３－メチル－２－ペンタノール、３－メチル－３－ペンタノール、４－メチル－１－ペンタノール、４－メチル－２－ペンタノール、２，２－ジメチル－３－ペンタノール、２，３－ジメチル－３－ペンタノール、２，４－ジメチル－３－ペンタノール、４，４－ジメチル－２－ペンタノール、３－エチル－３－ペンタノール、１－ヘプタノール、２－ヘプタノール、３－ヘプタノール、２－メチル－２－ヘキサノール、２－メチル－３－ヘキサノール、５－メチル－１－ヘキサノール、５－メチル－２－ヘキサノール、２－エチル－１－ヘキサノール、４－メチル－３－ヘプタノール、６－メチル－２－ヘプタノール、１－オクタノール、２－オクタノール、３－オクタノール、２－プロピル－１－ペンタノール、２，４，４－トリメチル－１－ペンタノール、２，６－ジメチル－４－ヘプタノール、３－エチル－２，２－ジメチル－ペンタノール、１－ノナノール、２－ノナノール、３，５，５－トリメチル－１－ヘキサノール、１－デカノール、２－デカノール、４－デカノール、３，７－ジメチル－１－オクタノール、３，７－ジメチル－３－オクタノール等が挙げられる。これらの有機溶媒は２種以上を組み合わせて用いてもよい。The solvent of the composition for forming the metal oxide semiconductor layer is mainly composed of water. A solvent mainly composed of water means a main solvent, that is, a solvent in which 50% by mass or more of the solvent is water. The solvent used in the composition for forming the metal oxide semiconductor layer may be mainly composed of water, and water alone or a mixed solvent of water and an organic solvent may be used. Specific examples of organic solvents other than water include propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monopropyl ether, methyl ethyl ketone, ethyl lactate, cyclohexanone, γ-butyrolactone, N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylcaprolactam, dimethyl sulfoxide, tetramethylurea, pyridine, dimethyl sulfone, hexamethyl sulfoxide, methanol, ethylene glycol, ethylene glycol monomethyl ether, propylene glycol monopropyl ether, methyl ethyl ketone, ethyl lactate, cyclohexanone, γ-butyrolactone, N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, N-methylcaprolactam, dimethyl sulfoxide, tetramethylurea, pyridine, dimethyl sulfone, hexamethyl sulfoxide, methanol, ethylene glycol monomethyl ether, propylene glycol monomethyl ether acetate ... ethanol, 1-propanol, isopropanol, n-butanol, 2-butanol, tert-butanol, 1-pentanol, 2-pentanol, 3-pentanol, n-hexanol, cyclohexanol, 2-methyl-2-butanol, 3-methyl-2-butanol, 2-methyl-1-butanol, 3-methyl-1-butanol, 2-methyl-1-pentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-1-pentanol, 3-methyl-2-pentanol, 3-methyl- 3-pentanol, 4-methyl-1-pentanol, 4-methyl-2-pentanol, 2,2-dimethyl-3-pentanol, 2,3-dimethyl-3-pentanol, 2,4-dimethyl-3-pentanol, 4,4-dimethyl-2-pentanol, 3-ethyl-3-pentanol, 1-heptanol, 2-heptanol, 3-heptanol, 2-methyl-2-hexanol, 2-methyl-3-hexanol, 5-methyl-1-hexanol, 5-methyl-2-hexanol, 2-ethyl-1-hexanol, 4-methyl 3-heptanol, 6-methyl-2-heptanol, 1-octanol, 2-octanol, 3-octanol, 2-propyl-1-pentanol, 2,4,4-trimethyl-1-pentanol, 2,6-dimethyl-4-heptanol, 3-ethyl-2,2-dimethyl-pentanol, 1-nonanol, 2-nonanol, 3,5,5-trimethyl-1-hexanol, 1-decanol, 2-decanol, 4-decanol, 3,7-dimethyl-1-octanol, 3,7-dimethyl-3-octanol, etc. These organic solvents may be used in combination of two or more kinds.
上記金属酸化物半導体層形成用組成物中の固形分濃度は０．１質量％以上であり、好ましくは０．３質量％以上であり、より好ましくは０．５質量％以上である。また上記固形分濃度は３０．０質量％以下であり、好ましくは２０．０質量％以下であり、より好ましくは１５．０質量％以下である。なお、固形分濃度とは、上記金属塩と第一アミド化合物の合計の濃度である。The solid content concentration in the composition for forming a metal oxide semiconductor layer is 0.1% by mass or more, preferably 0.3% by mass or more, and more preferably 0.5% by mass or more. The solid content concentration is 30.0% by mass or less, preferably 20.0% by mass or less, and more preferably 15.0% by mass or less. The solid content concentration is the total concentration of the metal salt and the first amide compound.
上記金属酸化物半導体層形成用組成物の製造方法は特に限定されず、例えば、金属塩と第一アミド化合物を、水を主体とする溶媒に混合すればよい。
組成物のｐＨ調整のために、必要に応じて、硝酸、硫酸、リン酸、炭酸、ホウ酸、塩酸、フッ化水素酸等の酸を添加してもよい。
The method for producing the composition for forming a metal oxide semiconductor layer is not particularly limited. For example, a metal salt and a first amide compound may be mixed in a solvent mainly containing water.
In order to adjust the pH of the composition, an acid such as nitric acid, sulfuric acid, phosphoric acid, carbonic acid, boric acid, hydrochloric acid, or hydrofluoric acid may be added, if necessary.
上記金属酸化物半導体層形成用組成物を基板に塗布して薄膜を形成した後、焼成することにより、緻密なアモルファスの金属酸化物半導体層を形成することができる。なお、焼成工程の前に、残存溶媒を予め除去するために、前処理として、例えば１１０℃～１８０℃、０．１分間～３０分間の熱処理による乾燥工程を行ってもよい。The composition for forming a metal oxide semiconductor layer is applied to a substrate to form a thin film, which is then fired to form a dense amorphous metal oxide semiconductor layer. Prior to the firing step, a drying step may be performed as a pretreatment step by heat treatment at, for example, 110°C to 180°C for 0.1 to 30 minutes in order to remove any remaining solvent.
上記金属酸化物半導体層形成用組成物の基板への塗布方法は、公知の方法を適用することができ、例えばスピンコート、ディップコート、スクリーン印刷法、ロールコート、インクジェットコート、ダイコート法、転写印刷法、スプレー法、スリットコート法等が挙げられる。上記金属酸化物半導体層形成用組成物を各種の塗布方法により塗布して得られる薄膜の厚さは１ｎｍ～１μｍであり、好ましくは１０ｎｍ～１００ｎｍである。The method for applying the composition for forming a metal oxide semiconductor layer to a substrate can be a known method, such as spin coating, dip coating, screen printing, roll coating, inkjet coating, die coating, transfer printing, spraying, slit coating, etc. The thickness of the thin film obtained by applying the composition for forming a metal oxide semiconductor layer by various application methods is 1 nm to 1 μm, and preferably 10 nm to 100 nm.
薄膜形成後、必要に応じて乾燥工程を経た後、焼成工程を実施する。薄膜の焼成により、薄膜（金属酸化物半導体層形成用組成物）中の金属塩が酸化反応し、アモルファスな金属酸化物半導体層を製造することができる。すなわち、上記した金属塩を構成する金属の酸化物（例えば、酸化インジウムガリウム亜鉛、酸化インジウムガリウム、酸化インジウムスズ亜鉛、酸化ガリウム亜鉛、酸化インジウムスズ、酸化インジウム亜鉛、酸化スズ亜鉛、酸化亜鉛、酸化スズ、すなわち例えば、ＩｎＧａＺｎＯｘ、ＩｎＧａＯｘ、ＩｎＳｎＺｎＯｘ、ＧａＺｎＯｘ、ＩｎＳｎＯｘ、ＩｎＺｎＯｘ、ＳｎＺｎＯｘ（いずれもｘ＞０）、ＺｎＯ、ＳｎＯ２等）を含む、半導体層が形成される。
この焼成温度は２５０℃～５００℃、例えば２５０℃～３５０℃とすることができる。なお、上記特定の金属酸化物半導体層形成用組成物を用いることにより、従来３００℃以上が必要とされていた焼成温度よりも、より低い温度で焼成しても、緻密なアモルファスの金属酸化物半導体層を形成することが可能である。焼成時間は特に限定されないが、例えば、０．１時間～１２０時間である。
After the thin film is formed, a drying process is performed as necessary, and then a baking process is performed. By baking the thin film, the metal salt in the thin film (composition for forming a metal oxide semiconductor layer) undergoes an oxidation reaction, and an amorphous metal oxide semiconductor layer can be produced. That is, a semiconductor layer is formed that contains the oxide of the metal constituting the above-mentioned metal salt (e.g., indium gallium zinc oxide, indium gallium oxide, indium tin zinc oxide, gallium zinc oxide, indium tin oxide, indium zinc oxide, tin oxide, zinc oxide, tin oxide, i.e., for example, InGaZnO x , InGaO x , InSnZnO x , GaZnO x , InSnO x , InZnO x , SnZnO x (all x>0), ZnO, SnO 2 , etc.).
The baking temperature can be 250° C. to 500° C., for example, 250° C. to 350° C. By using the specific metal oxide semiconductor layer-forming composition, it is possible to form a dense amorphous metal oxide semiconductor layer even when baking at a lower temperature than the baking temperature that has conventionally required 300° C. or higher. The baking time is not particularly limited, but is, for example, 0.1 hours to 120 hours.
薄膜の焼成には、従来使用されている大気圧プラズマ装置やマイクロ波加熱装置、またホットプレート、ＩＲ炉、オーブン等の装置を使用できる。上記特定の金属酸化物半導体層形成用組成物は３００℃以下の低温での焼成温度も適用できること、また生産性の観点から汎用性が高く、より安価な加熱装置を用いるという観点から、ホットプレート、ＩＲ炉、オーブンなどの使用が有利である。
また、前記薄膜の焼成は、空気中、酸素等の酸化雰囲気だけでなく、窒素、ヘリウム、アルゴン等の不活性ガス中で行うこともできる。
For firing the thin film, a conventionally used atmospheric pressure plasma device, microwave heating device, hot plate, IR furnace, oven, etc. can be used. The specific metal oxide semiconductor layer-forming composition can be applied to a firing temperature as low as 300° C. or less, and from the viewpoint of using a heating device that is highly versatile and inexpensive from the viewpoint of productivity, it is advantageous to use a hot plate, IR furnace, oven, etc.
The thin film can be fired not only in air or an oxidizing atmosphere such as oxygen, but also in an inert gas such as nitrogen, helium, or argon.
こうして得られた金属酸化物半導体層（ａ）の厚さは特に限定されないが、例えば５ｎｍ～１００ｎｍである。
なお、一回の塗布・焼成処理により所望の厚さが得られない場合には、塗布・焼成処理の工程を所望の膜厚となるまで繰り返したり、また、塗布・乾燥工程を所望の膜厚となるまで繰り返した後、焼成工程を実施すればよい。
The thickness of the metal oxide semiconductor layer (a) thus obtained is not particularly limited, but is, for example, 5 nm to 100 nm.
In addition, if the desired thickness cannot be obtained by a single coating/firing process, the coating/firing process may be repeated until the desired film thickness is obtained, or the coating/drying process may be repeated until the desired film thickness is obtained, and then a firing process may be carried out.
続いて、得られた金属酸化物半導体層（ａ）のパターニングとエッチングを行い、金属酸化物半導体層を所望の形状に加工する。パターニング法としては、例えばフォトレジストをマスクとして塩酸などによりエッチングする方法がある。不要になったフォトレジストは有機溶媒やアッシングなどによって除去することができる。 Then, the obtained metal oxide semiconductor layer (a) is patterned and etched to process the metal oxide semiconductor layer into the desired shape. For example, a patterning method includes a method in which a photoresist is used as a mask and etching is performed with hydrochloric acid or the like. Unnecessary photoresist can be removed by organic solvents or ashing.
＜（Ｂ）工程＞
本工程は、パターニング及びエッチングされた金属酸化物半導体層（ａ）上に、ゲート絶縁膜となる絶縁層（ｂ）を形成した後、該層（ｂ）の上に、金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ｃ）を形成する工程である（図５（Ｂ）工程参照）。
<Step (B)>
This process is a process in which an insulating layer (b) to be a gate insulating film is formed on the patterned and etched metal oxide semiconductor layer (a), and then a composition for forming a metal oxide semiconductor layer is applied onto the layer (b) and baked to form a metal oxide semiconductor layer (c) (see process in FIG. 5(B)).
絶縁層（ｂ）（ゲート絶縁膜）の形成方法としては、前述したように、スパッタ法、真空蒸着法、プラズマを用いた化学気相成長（プラズマＣＶＤ）法による形成方法がある。ＣＶＤ法では、ＳｉＮｘによる成膜や、ＳｉＨ４の成膜とその酸化が挙げられる。
また、二酸化ケイ素を主成分とする前駆体溶液を各種の塗布法を用いて作成した、塗布型の酸化膜を挙げることができる。前記二酸化ケイ素を主成分とする前駆体溶液として、例えばシリコーンが挙げられ、シリコーン骨格に官能基を導入してアミノ変性、エポキシ変性、カルボキシ変性、カルビノール変性、メタクリル変性、メルカプト変性、フェノール変性、フッ素変性等の変性シリコーンを用いることができる。
As described above, the insulating layer (b) (gate insulating film) can be formed by sputtering, vacuum deposition, or plasma-assisted chemical vapor deposition (plasma CVD). CVD methods include film formation using SiNx and film formation using SiH4 and its oxidation.
Also, examples of the oxide film are coating-type oxide films prepared by applying various coating methods to a precursor solution mainly composed of silicon dioxide. Examples of the precursor solution mainly composed of silicon dioxide include silicone, and modified silicones such as amino-modified, epoxy-modified, carboxy-modified, carbinol-modified, methacryl-modified, mercapto-modified, phenol-modified, and fluorine-modified silicones can be used by introducing functional groups into the silicone skeleton.
前記二酸化ケイ素を主成分とする前駆体溶液には、界面活性剤を添加することができる。界面活性剤としては、アニオン界面活性剤、カチオン界面活性剤、両性界面活性剤、非イオン性界面活性剤を用いることができる。
アニオン界面活性剤としては脂肪族モノカルボン酸塩、ポリオキシエチレンアルキルエーテルカルボン酸塩、Ｎ－アシルサルコシン塩、Ｎ－アシルグルタミン酸塩等のカルボン酸型、ジアルキルスルホコハク酸塩、アルカンスルホン酸塩、アルファーオレフィンスルホン酸塩、直鎖アルキルベンゼンスルホン酸塩、アルキル（分岐鎖）ベンゼンスルホン酸塩、ナフタレンスルホン酸塩－ホルムアルデヒド縮合物、アルキルナフタレンスルホン酸塩、Ｎ－メチル－Ｎ－アシルタウリン塩等のスルホン酸型、アルキル硫酸塩、ポリオキシエチレンアルキルエーテル硫酸塩、油脂硫酸エステル塩等の硫酸エステル型、アルキルリン酸塩、ポリオキシエチレンアルキルエーテルリン酸塩、ポリオキシエチレンアルキルフェニルエーテルリン酸塩等のリン酸エステル型が挙げられる。
カチオン界面活性剤としては、モノアルキルアミン塩、ジアルキルアミン塩、トリアルキルアミン塩等のアルキルアミン塩型、ハロゲン化（フッ化、塩化、臭化、又はヨウ化）アルキルトリメチルアンモニウム、ハロゲン化（フッ化、塩化、臭化、又はヨウ化）ジアルキルジメチルアンモニウム、ハロゲン化（フッ化、塩化、臭化、又はヨウ化）アルキルベンザルコニウム等の第４級アンモニウム塩型が挙げられる。
両性界面活性剤としては、アルキルベタイン、脂肪酸アミドプロピルベタイン等のカルボキシベタイン型、２－アルキル－Ｎ－カルボキシメチル－Ｎ－ヒドロキシエチルイミダゾリニウムベタイン等の２－アルキルイミダゾリンの誘導体型、アルキル（又はジアルキル）ジエチレントリアミノ酢酸等のグリシン型、アルキルアミンオキシド等のアミンオキシド型が挙げられる。
非イオン界面活性剤としては、グリセリン脂肪酸エステル、ソルビタン脂肪酸エステル、ショ糖脂肪酸エステル等のエステル型、ポリオキシエチレンアルキルエーテル、ポリオキシエチレンアルキルフェニルエーテル、ポリオキシエチレンポリオキシプロピレングリコール等のエーテル型、脂肪酸ポリエチレングリコール、脂肪酸ポリオキシエチレンソルビタン等のエステルエーテル型、脂肪酸アルカノールアミド等のアルカノールアミド型が挙げられる。
これらの界面活性剤はそれぞれアルキル鎖中の水素原子の一部もしくは全部をハロゲン原子に置換したものでもよい。
A surfactant may be added to the precursor solution containing silicon dioxide as a main component. The surfactant may be an anionic surfactant, a cationic surfactant, an amphoteric surfactant, or a nonionic surfactant.
Examples of anionic surfactants include carboxylic acid types such as aliphatic monocarboxylates, polyoxyethylene alkyl ether carboxylates, N-acylsarcosine salts, and N-acylglutamates; sulfonic acid types such as dialkyl sulfosuccinates, alkanesulfonates, alpha-olefin sulfonates, linear alkylbenzene sulfonates, alkyl (branched)benzene sulfonates, naphthalenesulfonate-formaldehyde condensates, alkylnaphthalenesulfonates, and N-methyl-N-acyltaurate salts; sulfate types such as alkyl sulfates, polyoxyethylene alkyl ether sulfates, and fat sulfate salts; and phosphate types such as alkyl phosphates, polyoxyethylene alkyl ether phosphates, and polyoxyethylene alkyl phenyl ether phosphates.
Examples of the cationic surfactant include alkylamine salt types such as monoalkylamine salts, dialkylamine salts, and trialkylamine salts, and quaternary ammonium salt types such as alkyltrimethylammonium halides (fluoride, chloride, bromide, or iodide), dialkyldimethylammonium halides (fluoride, chloride, bromide, or iodide), and alkylbenzalkonium halides (fluoride, chloride, bromide, or iodide).
Examples of amphoteric surfactants include carboxybetaine type surfactants such as alkylbetaines and fatty acid amidopropyl betaines, 2-alkylimidazoline derivative type surfactants such as 2-alkyl-N-carboxymethyl-N-hydroxyethylimidazolinium betaines, glycine type surfactants such as alkyl (or dialkyl)diethylenetriaminoacetic acid, and amine oxide type surfactants such as alkylamine oxide.
Examples of nonionic surfactants include ester-type surfactants such as glycerin fatty acid esters, sorbitan fatty acid esters, and sucrose fatty acid esters; ether-type surfactants such as polyoxyethylene alkyl ethers, polyoxyethylene alkylphenyl ethers, and polyoxyethylene polyoxypropylene glycol; ester-ether-type surfactants such as fatty acid polyethylene glycol and fatty acid polyoxyethylene sorbitan; and alkanolamide-type surfactants such as fatty acid alkanolamides.
These surfactants may each have some or all of the hydrogen atoms in the alkyl chain substituted with halogen atoms.
絶縁層（ｂ）（ゲート絶縁膜）の好適な一例としてフッ素を含むポリシロキサン膜を挙げることができる。フッ素を含むポリシロキサン膜は、フッ素化ポリシロキサン、フッ素変性等の変性シリコーン、又はフッ素含有界面活性剤を含むポリシロキサン等の材料を塗布し焼成することにより得られる。すなわち、フッ素を含むポリシロキサン膜とは、ポリシロキサン構造の一部がフッ素原子で置換された態様だけでなく、膜中にフッ素原子を含有する添加剤（界面活性剤等）を含有する態様の双方を意味する。
フッ素を含むポリシロキサン膜は、固形分として例えばフッ素化ポリシロキサン、フッ素変性等の変性シリコーン、又はフッ素含有界面活性剤を含むポリシロキサン等を、固形分濃度０．１質量％～５０質量％、又は０．１質量％～４０質量％、又は０．１質量％～３０質量％、又は１質量％～２０質量％、又は５質量％～２０質量％の水溶性組成物を用いて形成できる。
より具体的には、基板上に形成された金属酸化物半導体層（ａ）上に、前記水溶性組成物をピンコート等により塗布して、１１０℃～１８０℃で０．１分間～３０分間の乾燥後、２５０℃～３５０℃で０．１時間～１０時間の焼成を行い、膜厚が例えば１０ｎｍ～５００ｎｍ、又は５０ｎｍ～４００ｎｍ、１００ｎｍ～３００ｎｍの範囲にて、フッ素を含むポリシロキサン膜を得られる。
A suitable example of the insulating layer (b) (gate insulating film) is a polysiloxane film containing fluorine. The polysiloxane film containing fluorine is obtained by applying and baking a material such as fluorinated polysiloxane, modified silicone such as fluorine modified, or polysiloxane containing a fluorine-containing surfactant. That is, the polysiloxane film containing fluorine means not only a mode in which a part of the polysiloxane structure is replaced with a fluorine atom, but also a mode in which an additive containing a fluorine atom (surfactant, etc.) is contained in the film.
The fluorine-containing polysiloxane film can be formed by using a water-soluble composition having a solid content of, for example, fluorinated polysiloxane, modified silicone such as fluorine-modified, or polysiloxane containing a fluorine-containing surfactant, with a solid content concentration of 0.1% by mass to 50% by mass, or 0.1% by mass to 40% by mass, or 0.1% by mass to 30% by mass, or 1% by mass to 20% by mass, or 5% by mass to 20% by mass.
More specifically, the water-soluble composition is applied by pin coating or the like onto a metal oxide semiconductor layer (a) formed on a substrate, and then dried at 110° C. to 180° C. for 0.1 to 30 minutes, and then baked at 250° C. to 350° C. for 0.1 to 10 hours, to obtain a fluorine-containing polysiloxane film having a film thickness in the range of, for example, 10 nm to 500 nm, 50 nm to 400 nm, or 100 nm to 300 nm.
絶縁層（ｂ）形成後、該層（ｂ）上に、金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ｃ）を形成する。該（ｃ）層は、前述の＜（Ａ）工程＞における金属酸化物半導体層（ａ）の形成と同様の材料・手順・厚さにて形成すればよい。After the insulating layer (b) is formed, a composition for forming a metal oxide semiconductor layer is applied onto the insulating layer (b) and baked to form a metal oxide semiconductor layer (c). The (c) layer may be formed with the same materials, procedures, and thickness as the metal oxide semiconductor layer (a) in the above-mentioned <Step (A)>.
＜（Ｃ）工程＞
本工程は、金属酸化物半導体層（ｃ）のパターニングとエッチングを行う工程であり、前述の＜（Ａ）工程＞における金属酸化物半導体層（ａ）のパターニングとエッチングと同様の手順により、実施可能である（図５（Ｃ）工程参照）。
<Step (C)>
This process is a process for patterning and etching the metal oxide semiconductor layer (c), and can be carried out in the same manner as the patterning and etching of the metal oxide semiconductor layer (a) in the above-mentioned <Process (A)> (see Process (C) in FIG. 5).
＜（Ｄ）工程＞
本工程は、パターニング及びエッチングされた金属酸化物半導体層（ｃ）をマスクパターンとして、下層の絶縁層（ｂ）をエッチングし、所望の形状の絶縁層（ｂ）を得る工程である（図５（Ｄ）工程参照）。
絶縁層（ｂ）のエッチングは、絶縁層（ｂ）を構成する材料に応じてドライエッチング又はウェットエッチングを適宜選択すればよく、例えば反応性イオンエッチング装置を用いて実施することができる。
<Step (D)>
In this process, the underlying insulating layer (b) is etched using the patterned and etched metal oxide semiconductor layer (c) as a mask pattern to obtain the insulating layer (b) in a desired shape (see process in FIG. 5(D)).
The insulating layer (b) may be etched by dry etching or wet etching, which may be appropriately selected depending on the material constituting the insulating layer (b), and may be etched by using, for example, a reactive ion etching device.
＜（Ｅ）工程＞
本工程は、基板の上方から、すなわち基板上に形成された積層構造（金属酸化物半導体層（ａ）－絶縁層（ｂ）－金属酸化物半導体層（ｃ））の上方から、エキシマレーザー光又はＹＡＧレーザー光を照射する工程である（図５（Ｅ）工程参照）。
本工程は、エキシマレーザー光又はＹＡＧレーザー光に加えて、ＵＶ光を照射する工程［（Ｅ’）工程］として実施されることが好ましい。
本工程は、より好ましくはＵＶ光を照射した後、エキシマレーザー光又はＹＡＧレーザー光を照射する工程［（Ｅ”）工程］として実施される。
<Step (E)>
This process is a process of irradiating the substrate with excimer laser light or YAG laser light from above, i.e., from above the laminated structure (metal oxide semiconductor layer (a)-insulating layer (b)-metal oxide semiconductor layer (c)) formed on the substrate (see process (E) in FIG. 5).
This step is preferably carried out as a step of irradiating UV light in addition to the excimer laser light or YAG laser light [step (E')].
This step is more preferably carried out as a step of irradiating with UV light, followed by irradiating with excimer laser light or YAG laser light [step (E″)].
エキシマレーザー光、ＹＡＧレーザー光、ＵＶ光の波長や照射時間、またエネルギー等は、照射する金属酸化物半導体層の構成や厚さ等によって適宜選択すればよい。
例えばエキシマレーザー光の照射は、波長１５０ｎｍ～３８０ｎｍのエキシマレーザー光を５０ｍＪ／ｃｍ２～１５０ｍＪ／ｃｍ２にて１ナノ秒間～１２０ナノ秒間照射することによって実施される。
例えば、ＹＡＧレーザー光は、波長２５０ｎｍ～４００ｎｍのＹＡＧレーザー光を５０ｍＪ／ｃｍ２～１５０ｍＪ／ｃｍ２にて１ナノ秒間～１２０ナノ秒間照射することによって実施される。
またＵＶ光の照射は、例えば、波長１５０ｎｍ～３５０ｎｍのＵＶ光を１分間～１２０分間照射することによって実施される。
The wavelength, irradiation time, energy, etc. of the excimer laser light, YAG laser light, or UV light may be appropriately selected depending on the configuration, thickness, etc. of the metal oxide semiconductor layer to be irradiated.
For example, the irradiation with excimer laser light is carried out by irradiating with excimer laser light having a wavelength of 150 nm to 380 nm at 50 mJ/cm 2 to 150 mJ/cm 2 for 1 nanosecond to 120 nanoseconds.
For example, the YAG laser beam is applied by irradiating a YAG laser beam having a wavelength of 250 nm to 400 nm at 50 mJ/cm 2 to 150 mJ/cm 2 for 1 nanosecond to 120 nanoseconds.
The UV light irradiation is carried out, for example, by irradiating UV light having a wavelength of 150 nm to 350 nm for 1 minute to 120 minutes.
上記（Ｅ）工程を経ることにより、エキシマレーザー光又はＹＡＧレーザー光の照射により該半導体層が移動度の高いチャネル層に変換される。また表層に露出した金属酸化物層は、ＵＶ光照射によって導体（電極）に変換される。
前述したとおり、上記（Ｅ）工程ではエキシマレーザー光又はＹＡＧレーザー光を照射することを必須とするものである。そして、上記（Ｅ）工程ではＵＶ光とエキシマレーザー光又はＹＡＧレーザー光を照射する（Ｅ’）工程を行うことができる。更に（Ｅ）工程ではＵＶ光を照射した後、エキシマレーザー光又はＹＡＧレーザー光を照射する（Ｅ”）工程を行うことができる。
Through the above-mentioned step (E), the semiconductor layer is converted into a channel layer with high mobility by irradiation with an excimer laser beam or a YAG laser beam, and the metal oxide layer exposed on the surface is converted into a conductor (electrode) by irradiation with UV light.
As described above, the step (E) requires irradiation with excimer laser light or YAG laser light. The step (E) may include a step (E') of irradiating with UV light and excimer laser light or YAG laser light. Furthermore, the step (E) may include a step (E") of irradiating with excimer laser light or YAG laser light after irradiating with UV light.
以下、実施例を挙げて、本発明を更に詳しく説明するが、本発明は、これら実施例に限定されるものでない。なお、実施例で用いた各測定装置等は以下のとおりである。The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples. The measuring devices used in the examples are as follows:
移動度の測定方法
実施例及び比較例で製造した薄膜トランジスタの移動度の測定には、半導体パラメータ―アナライザー Ａｇｉｌｅｎｔ４１５６Ｃを用いた。
ドレイン電圧０．１Ｖ、ＴＦＴのサイズはチャンネル幅９０μｍ、チェンネル長１０μｍにて、ゲート電圧－２０Ｖから＋２０Ｖにおけるドレイン電流の変化を測定し、移動度（単位：ｃｍ２／Ｖｓ）を算出した。
Mobility Measurement Method The mobility of the thin film transistors produced in the examples and comparative examples was measured using a semiconductor parameter analyzer, Agilent 4156C.
The drain voltage was 0.1 V, the TFT size was 90 μm in channel width and 10 μm in channel length, and the change in drain current at gate voltages from −20 V to +20 V was measured to calculate the mobility (unit: cm 2 /Vs).
低圧水銀ランプの照度の測定方法
実施例で用いた低圧水銀ランプの照度は、ＯＡＩ社製の照度計（ＭＯＤＥＬ３０６）に２５３．７ｎｍに感度ピークを持つプローブを接続し測定した。低圧水銀ランプの主な発光スペクトルは１８５ｎｍと２５４ｎｍの２つとなり、照度の比を１５：８５とし、ＭＯＤＥＬ３０６で測定された照度（２５４ｎｍの照度）を０．８５で除する事で低圧水銀ランプの照度とした。
The illuminance of the low-pressure mercury lamp used in the examples was measured by connecting a probe having a sensitivity peak at 253.7 nm to an illuminance meter (MODEL 306) manufactured by OAI Co., Ltd. The main emission spectrum of the low-pressure mercury lamp is 185 nm and 254 nm, and the illuminance ratio was set to 15:85, and the illuminance measured with MODEL 306 (illuminance at 254 nm) was divided by 0.85 to obtain the illuminance of the low-pressure mercury lamp.
金属酸化物半導体層形成用組成物（前駆体溶液）１の調製
硝酸インジウム（ＩＩＩ）３水和物０．９０ｇ（Ａｌｄｒｉｃｈ社製、９９．９９９％ｔｒａｃｅ ｍｅｔａｌｓ ｂａｓｉｓ）と硝酸亜鉛６水和物０．２３ｇ（Ａｌｄｒｉｃｈ社製、９９．９９９％ｔｒａｃｅ ｍｅｔａｌｓ ｂａｓｉｓ）とホルムアミド０．０９ｇ（東京化成工業（株）製、９８．５％）とを超純水８．７８ｇに添加し、溶液が完全に透明になるまで撹拌して水溶液としたものを、金属酸化物半導体層形成用組成物１とした。
Preparation of Metal Oxide Semiconductor Layer-Forming Composition (Precursor Solution) 1 0.90 g of indium (III) nitrate trihydrate (manufactured by Aldrich Corporation, 99.999% trace metals basis), 0.23 g of zinc nitrate hexahydrate (manufactured by Aldrich Corporation, 99.999% trace metals basis), and 0.09 g of formamide (manufactured by Tokyo Chemical Industry Co., Ltd., 98.5%) were added to 8.78 g of ultrapure water, and the solution was stirred until it became completely transparent to obtain an aqueous solution, which was used as metal oxide semiconductor layer-forming composition 1.
構造体Ａの作製
シリコン酸化膜が１００ｎｍ積層したシリコン基板に、金属酸化物半導体層形成用組成物１をスピンコーターを用いて４，０００ｒｐｍにて塗工し、１５０℃で１０分間乾燥することで酸化物半導体前駆体層を得た。続いて、スピンコーターによる塗工と１５０℃での１０分間の乾燥を１サイクルとして４回繰り返し、最後にホットプレートを用いて３００℃で６０分のアニール処理を行い、膜厚５０ｎｍのＩｎＺｎＯからなる酸化物半導体層Ａを得た。
次に、酸化物半導体層Ａの上部にフォトレジストを塗布し露光と現像を行い、レジストパターンを形成した。このレジストパターンをマスクとし、酸化物半導体層Ａを０．０１Ｍの塩酸水溶液に５分間浸漬することでエッチングした。エッチング処理後、剥離液を用いて、酸化物半導体層Ａの上部に残されたフォトレジストを除去した。
次に、酸化物半導体層Ａの上部にスピンコーターを用いて膜厚２００ｎｍのフッ素を含むポリシロキサン膜をゲート絶縁膜として形成した。焼成温度は３００℃であった。
次に、ゲート絶縁膜の上部に、金属酸化物半導体層形成用組成物１をスピンコーターを用いて４，０００ｒｐｍにて塗工し、１５０℃で１０分間乾燥することで酸化物半導体前駆体層を得た。続いて、スピンコーターによる塗工と１５０℃での１０分間の乾燥を１サイクルとして４回繰り返した後、最後にホットプレートを用いて３００℃で６０分のアニール処理を行い、膜厚５０ｎｍのＩｎＺｎＯからなる酸化物半導体層Ｂを得た。
次に、酸化物半導体層Ｂの上部にフォトレジストを塗布し露光と現像を行い、レジストパターンを形成した。このレジストパターンをマスクとし、酸化物半導体層Ｂを０．０１Ｍの塩酸水溶液を用いて上記同様にエッチングした。エッチング処理後、剥離液を用いて、酸化物半導体層Ｂの上部に残されたフォトレジストを除去した。
Preparation of Structure A A metal oxide semiconductor layer-forming composition 1 was applied to a silicon substrate having a silicon oxide film of 100 nm laminated thereon using a spin coater at 4,000 rpm, and dried for 10 minutes at 150° C. to obtain an oxide semiconductor precursor layer. Subsequently, one cycle of application using the spin coater and drying for 10 minutes at 150° C. was repeated four times, and finally, an annealing treatment was performed for 60 minutes at 300° C. using a hot plate to obtain an oxide semiconductor layer A made of InZnO having a film thickness of 50 nm.
Next, a photoresist was applied to the upper part of the oxide semiconductor layer A, and exposure and development were performed to form a resist pattern. Using this resist pattern as a mask, the oxide semiconductor layer A was immersed in a 0.01 M hydrochloric acid aqueous solution for 5 minutes to perform etching. After the etching process, the photoresist remaining on the upper part of the oxide semiconductor layer A was removed using a stripping solution.
Next, a fluorine-containing polysiloxane film having a thickness of 200 nm was formed as a gate insulating film by using a spin coater on the oxide semiconductor layer A. The baking temperature was 300°C.
Next, an oxide semiconductor precursor layer was obtained by applying the metal oxide semiconductor layer-forming composition 1 to the upper portion of the gate insulating film using a spin coater at 4,000 rpm and drying for 10 minutes at 150° C. Subsequently, one cycle of application using the spin coater and drying for 10 minutes at 150° C. was repeated four times, and finally, an annealing treatment was performed using a hot plate at 300° C. for 60 minutes to obtain an oxide semiconductor layer B made of InZnO having a thickness of 50 nm.
Next, a photoresist was applied to the upper part of the oxide semiconductor layer B, and exposure and development were performed to form a resist pattern. Using this resist pattern as a mask, the oxide semiconductor layer B was etched in the same manner as above using a 0.01 M hydrochloric acid aqueous solution. After the etching process, the photoresist remaining on the upper part of the oxide semiconductor layer B was removed using a stripping solution.
次に、反応性イオンエッチング装置を用いて、酸化物半導体層Ｂをマスクにして、ゲート絶縁膜をドライエッチングした。プロセスガスはＣＦ４とＡｒの混合ガスを用いた。
ドライエッチングの工程において、マスクされていないポリシロキサンと酸化物半導体Ｂ上のフォトレジストは完全に除去され、構造体Ａを得た。
図１に構造体Ａの模式図（断面図）を示す。
Next, the gate insulating film was dry-etched using a reactive ion etching apparatus with the oxide semiconductor layer B as a mask, using a mixed gas of CF4 and Ar as a process gas.
In the dry etching process, the unmasked polysiloxane and the photoresist on the oxide semiconductor B were completely removed, and a structure A was obtained.
FIG. 1 shows a schematic diagram (cross-sectional view) of structure A.
実施例１ トップゲート型薄膜トランジスタ（１）の作製及び評価
低圧水銀ランプ（サムコ社製ＵＶオゾンクリーナーＵＶ１、照度１５ｍＷ／ｃｍ２、波長１８５ｎｍ～２５４ｎｍ）を用い、構造体Ａに、大気雰囲気下で、紫外線を６０分間連続照射した（５４Ｊ／ｃｍ２）。紫外線照射時、構造体Ａをホットプレートにて１１５℃に加熱した。
次に、ＫｒＦエキシマレーザーアニール装置を用いて、大気雰囲気下で、照射エネルギー量が１２０ｍＪ／ｃｍ２になる条件にて、ＫｒＦエキシマレーザー（波長２４８ｎｍ）を９ナノ秒間、構造体Ａに照射した。この時のピーク出力は１３．３ＭＷ／ｃｍ２であった。
Example 1: Fabrication and Evaluation of Top-Gate Thin-Film Transistor (1) Using a low-pressure mercury lamp (UV Ozone Cleaner UV1 manufactured by Samco, illuminance 15 mW/cm 2 , wavelength 185 nm to 254 nm), Structure A was continuously irradiated with ultraviolet light (54 J/cm 2 ) for 60 minutes in an air atmosphere. During the ultraviolet light irradiation, Structure A was heated to 115° C. on a hot plate.
Next, using a KrF excimer laser annealing device, the structure A was irradiated with a KrF excimer laser (wavelength 248 nm) for 9 nanoseconds under the condition that the irradiation energy amount was 120 mJ/ cm2 in the air atmosphere. The peak output at this time was 13.3 MW/ cm2 .
上記の紫外線照射とエキシマレーザー照射の処理を施した構造体Ａにおいては、酸化物半導体層Ｂ及び酸化物半導体層Ａの露出部は、電気抵抗が大きく低下して導体となり、電極として機能した。一方、酸化物半導体層Ａのゲート絶縁膜に覆われている領域は、半導体（チャネル）として機能した。すなわち、図２に示すように、表層に露出した酸化物半導体層Ｂはゲート電極として機能し、また表層に露出した酸化物半導体層Ａ（一部）はソース電極又はドレイン電極（なおソース電極とドレイン電極は特に区別されない）として機能し、結果として、トップゲート型薄膜トランジスタが製造できた。
実施例１で製造したトップゲート型薄膜トランジスタの伝達特性を図３に示す。実施例１で製造したトップゲート型薄膜トランジスタの移動度は３５．９４ｃｍ２／Ｖｓとなった。
In the structure A subjected to the above-mentioned ultraviolet irradiation and excimer laser irradiation, the exposed portions of the oxide semiconductor layer B and the oxide semiconductor layer A became conductors with a large decrease in electrical resistance and functioned as electrodes. Meanwhile, the region of the oxide semiconductor layer A covered with the gate insulating film functioned as a semiconductor (channel). That is, as shown in FIG. 2, the oxide semiconductor layer B exposed on the surface functioned as a gate electrode, and the oxide semiconductor layer A (part) exposed on the surface functioned as a source electrode or drain electrode (the source electrode and the drain electrode are not particularly distinguished), and as a result, a top-gate type thin film transistor was manufactured.
3 shows the transfer characteristic of the top-gate type thin film transistor manufactured in Example 1. The mobility of the top-gate type thin film transistor manufactured in Example 1 was 35.94 cm 2 /Vs.
実施例２ トップゲート型薄膜トランジスタの作製及び評価
構造体Ａを用い、ＫｒＦエキシマレーザーの照射条件を、１４０ｍＪ／ｃｍ２（ピーク出力１５．６ＭＷ／ｃｍ２）とした以外は、実施例１と同一の条件にて、図２に示す構造（断面図）を有するトップゲート型薄膜トランジスタを作製した。実施例２で製造したトップゲート型薄膜トランジスタの移動度は３１．５９ｃｍ２／Ｖｓとなった。
Example 2: Fabrication and Evaluation of Top-Gate Thin-Film Transistor A top-gate thin-film transistor having the structure (cross-sectional view) shown in Fig. 2 was fabricated using structure A under the same conditions as in Example 1, except that the KrF excimer laser irradiation conditions were 140 mJ/ cm2 (peak output 15.6 MW/ cm2 ). The mobility of the top-gate thin-film transistor fabricated in Example 2 was 31.59 cm2 /Vs.
実施例３ トップゲート型薄膜トランジスタの作製及び評価
構造体Ａを用い、ＫｒＦエキシマレーザーの照射条件を、真空条件下にて１００ｍＪ／ｃｍ２（ピーク出力１１．１ＭＷ／ｃｍ２）とした以外は、実施例１と同一の条件にて、図２に示す構造（断面図）を有するトップゲート型薄膜トランジスタを作製した。実施例３で製造したトップゲート型薄膜トランジスタの移動度は４１．７５ｃｍ２／Ｖｓとなった。
Example 3: Fabrication and Evaluation of Top-Gate Thin-Film Transistor A top-gate thin-film transistor having the structure (cross-sectional view) shown in Fig. 2 was fabricated using structure A under the same conditions as in Example 1, except that the KrF excimer laser irradiation conditions were 100 mJ/ cm2 (peak output 11.1 MW/ cm2 ) under vacuum conditions. The mobility of the top-gate thin-film transistor fabricated in Example 3 was 41.75 cm2 /Vs.
実施例４ トップゲート型薄膜トランジスタの作製及び評価
構造体Ａを用い、ＫｒＦエキシマレーザーの照射条件を、真空条件下にて１２０ｍＪ／ｃｍ２（ピーク出力１３．３ＭＷ／ｃｍ２）とした以外は、実施例１と同一の条件にて、図２に示す構造（断面図）を有するトップゲート型薄膜トランジスタを作製した。実施例４で製造したトップゲート型薄膜トランジスタの移動度は４５．５６ｃｍ２／Ｖｓとなった。
Example 4: Fabrication and Evaluation of Top-Gate Thin-Film Transistor A top-gate thin-film transistor having the structure (cross-sectional view) shown in Fig. 2 was fabricated using structure A under the same conditions as in Example 1, except that the KrF excimer laser irradiation conditions were 120 mJ/ cm2 (peak output 13.3 MW/ cm2 ) under vacuum conditions. The mobility of the top-gate thin-film transistor fabricated in Example 4 was 45.56 cm2 /Vs.
実施例５ トップゲート型薄膜トランジスタの作製及び評価
構造体Ａを用い、ＫｒＦエキシマレーザーの照射条件を、真空条件下にて１４０ｍＪ／ｃｍ２（ピーク出力１５．６ＭＷ／ｃｍ２）とした以外は、実施例１と同一の条件にて、図２に示す構造（断面図）を有するトップゲート型薄膜トランジスタを作製した。実施例５で製造したトップゲート型薄膜トランジスタの移動度は１８．３８ｃｍ２／Ｖｓとなった。
Example 5: Fabrication and Evaluation of Top-Gate Thin-Film Transistor A top-gate thin-film transistor having the structure (cross-sectional view) shown in Fig. 2 was fabricated using structure A under the same conditions as in Example 1, except that the KrF excimer laser irradiation conditions were 140 mJ/ cm2 (peak output 15.6 MW/ cm2 ) under vacuum conditions. The mobility of the top-gate thin-film transistor fabricated in Example 5 was 18.38 cm2 /Vs.
実施例６ トップゲート型薄膜トランジスタの作製及び評価
構造体Ａを用い、ＫｒＦエキシマレーザーの照射条件を、窒素雰囲気下にて１２０ｍＪ／ｃｍ２（ピーク出力１３．３ＭＷ／ｃｍ２）とした以外は、実施例１と同一の条件にて、図２に示す構造（断面図）を有するトップゲート型薄膜トランジスタを作製した。実施例６で製造したトップゲート型薄膜トランジスタの移動度は２７．７８ｃｍ２／Ｖｓとなった。
Example 6: Fabrication and Evaluation of Top-Gate Thin-Film Transistor A top-gate thin-film transistor having the structure (cross-sectional view) shown in Fig. 2 was fabricated using structure A under the same conditions as in Example 1, except that the KrF excimer laser irradiation conditions were 120 mJ/ cm2 (peak output 13.3 MW/ cm2 ) in a nitrogen atmosphere. The mobility of the top-gate thin-film transistor fabricated in Example 6 was 27.78 cm2 /Vs.
参考例１ トップゲート型薄膜トランジスタの作製及び評価
低圧水銀ランプ（サムコ社製ＵＶオゾンクリーナーＵＶ１、照度１５ｍＷ／ｃｍ２）を用い、構造体Ａに、大気雰囲気下で、紫外線を６０分間連続照射した（５４Ｊ／ｃｍ２）。紫外線照射時、構造体Ａをホットプレートにて１１５℃に加熱した。
紫外線照射処理のみを施した構造体Ａにおいて、酸化物半導体層Ｂ及び酸化物半導体層Ａの露出部は、電気抵抗が大きく低下し電極として機能した。酸化物半導体層Ａのゲート絶縁膜に覆われている領域は、半導体（チャネル）として機能した。すなわち、参考例１においても、先の図２に示す構造（断面図）を有するトップゲート型薄膜トランジスタが製造できた。ただし、参考例１で製造したトップゲート型薄膜トランジスタの移動度は１４．３３ｃｍ２／Ｖｓとなり、実施例１～実施例６で得られた移動度が１８ｃｍ２／Ｖｓを超える性能の良いトップゲート型薄膜トランジスタは作製できなかった。
Reference Example 1: Fabrication and Evaluation of Top-Gate Thin Film Transistor Using a low-pressure mercury lamp (UV Ozone Cleaner UV1 manufactured by Samco, illuminance 15 mW/cm 2 ), Structure A was continuously irradiated with ultraviolet light (54 J/cm 2 ) in the air for 60 minutes. During the ultraviolet light irradiation, Structure A was heated to 115° C. on a hot plate.
In the structure A that was subjected to only the ultraviolet irradiation treatment, the exposed portions of the oxide semiconductor layer B and the oxide semiconductor layer A had a significantly reduced electrical resistance and functioned as electrodes. The region of the oxide semiconductor layer A covered with the gate insulating film functioned as a semiconductor (channel). That is, in Reference Example 1 as well, a top-gate type thin film transistor having the structure (cross-sectional view) shown in FIG. 2 was manufactured. However, the mobility of the top-gate type thin film transistor manufactured in Reference Example 1 was 14.33 cm 2 /Vs, and a top-gate type thin film transistor with good performance having a mobility exceeding 18 cm 2 /Vs obtained in Examples 1 to 6 could not be manufactured.
比較例１
構造体Ａ（紫外線未照射、エキシマレーザー未照射）の酸化物半導体層Ｂをゲート電極とみなし、酸化物半導体層Ａの露出部をそれぞれソース電極、ドレイン電極とみなして、構造体Ａをトップゲート型薄膜トランジスタとして扱った場合の性能を評価したが、その移動度は０．０１ｃｍ２／Ｖｓとなった。
Comparative Example 1
The oxide semiconductor layer B of the structure A (not irradiated with ultraviolet light or excimer laser) was regarded as a gate electrode, and the exposed portions of the oxide semiconductor layer A were regarded as a source electrode and a drain electrode, respectively, and the performance of the structure A was evaluated when treated as a top-gate thin film transistor, and the mobility was 0.01 cm 2 /Vs.
実施例７ トップゲート型薄膜トランジスタの作製及び評価
低圧水銀ランプ（サムコ社製ＵＶオゾンクリーナーＵＶ１、照度１５ｍＷ／ｃｍ２、波長１８５ｎｍ～２５４ｎｍ）を用い、構造体Ａに、大気雰囲気下で、紫外線を６０分間連続照射した（５４Ｊ／ｃｍ２）。紫外線照射時、構造体Ａをホットプレートにて１１５℃に加熱した。
次に、ＹＡＧレーザー装置（ＣＯＨＥＲＥＮＴ社製、ＭＡＴＲＩＸ ３５５－１－６０）を用いて、大気雰囲気下で、照射エネルギー量が１２０ｍＪ／ｃｍ２になる条件にて、ＹＡＧレーザーを構造体Ａに照射した。この時のＹＡＧレーザー（波長３５５ｎｍ）のパルス幅は２５ナノ秒以下、周波数は６０ｋＨｚ、照射時間は４分、強度は０．５ｍＷ／ｃｍ２とした。
上記の紫外線照射とＹＡＧレーザー照射の処理を施した構造体Ａにおいては、酸化物半導体層Ｂ及び酸化物半導体層Ａの露出部は、電気抵抗が大きく低下して導体となり、電極として機能した。一方、酸化物半導体層Ａのゲート絶縁膜に覆われている領域は、半導体（チャネル）として機能した。すなわち、図２に示すように、表層に露出した酸化物半導体層Ｂはゲート電極として機能し、また表層に露出した酸化物半導体層Ａ（一部）はソース電極又はドレイン電極（なおソース電極とドレイン電極は特に区別されない）として機能し、結果として、トップゲート型薄膜トランジスタが製造できた。
実施例７で製造したトップゲート型薄膜トランジスタの伝達特性を図４に示す。実施例７で製造したトップゲート型薄膜トランジスタの移動度は１２．１８ｃｍ２／Ｖｓとなった。移動度は参考例１と同程度であったが、より安定した伝達特性が得られた。
Example 7: Fabrication and Evaluation of Top-Gate Thin-Film Transistor Using a low-pressure mercury lamp (UV Ozone Cleaner UV1 manufactured by Samco, illuminance 15 mW/cm 2 , wavelength 185 nm to 254 nm), Structure A was continuously irradiated with ultraviolet light (54 J/cm 2 ) for 60 minutes in an air atmosphere. During the ultraviolet light irradiation, Structure A was heated to 115° C. on a hot plate.
Next, using a YAG laser device (MATRIX 355-1-60, manufactured by COHERENT), the structure A was irradiated with a YAG laser under the conditions of an irradiation energy amount of 120 mJ/ cm2 in an air atmosphere. The pulse width of the YAG laser (wavelength 355 nm) at this time was 25 nanoseconds or less, the frequency was 60 kHz, the irradiation time was 4 minutes, and the intensity was 0.5 mW/ cm2 .
In the structure A that was subjected to the above-mentioned ultraviolet irradiation and YAG laser irradiation, the exposed portions of the oxide semiconductor layer B and the oxide semiconductor layer A became conductors with a large decrease in electrical resistance and functioned as electrodes. Meanwhile, the region of the oxide semiconductor layer A covered with the gate insulating film functioned as a semiconductor (channel). That is, as shown in FIG. 2, the oxide semiconductor layer B exposed on the surface functioned as a gate electrode, and the oxide semiconductor layer A (part) exposed on the surface functioned as a source electrode or drain electrode (the source electrode and the drain electrode are not particularly distinguished), and as a result, a top-gate type thin film transistor was manufactured.
The transfer characteristics of the top-gate type thin film transistor produced in Example 7 are shown in Fig. 4. The mobility of the top-gate type thin film transistor produced in Example 7 was 12.18 cm2 /Vs. The mobility was similar to that of Reference Example 1, but more stable transfer characteristics were obtained.
Claims (8)
（Ａ）工程：基板上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ａ）を形成し、該層（ａ）のパターニングとエッチングを行う工程、
（Ｂ）工程：パターニング及びエッチングされた金属酸化物半導体層（ａ）上に、絶縁層（ｂ）を形成し、該層（ｂ）の上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ｃ）を形成する工程、
（Ｃ）工程：金属酸化物半導体層（ｃ）のパターニングとエッチングを行う工程、
（Ｄ）工程：パターニング及びエッチングされた金属酸化物半導体層（ｃ）をマスクパターンとして下層の絶縁層（ｂ）をエッチングする工程、
（Ｅ）工程：基板の上方からエキシマレーザー光又はＹＡＧレーザー光を照射する工程
を含み、
前記（Ｅ）工程が、基板の上方からＵＶ光と、エキシマレーザー光又はＹＡＧレーザー光をともに照射する（Ｅ’）工程である、
トップゲート型薄膜トランジスタの製造方法。 A method for manufacturing a top-gate thin film transistor, comprising the following steps (A) to (E):
Step (A): a step of applying a composition for forming a metal oxide semiconductor layer on a substrate, baking the composition, forming a metal oxide semiconductor layer (a), and patterning and etching the layer (a);
Step (B): forming an insulating layer (b) on the patterned and etched metal oxide semiconductor layer (a), and applying a metal oxide semiconductor layer-forming composition onto the insulating layer (b) and baking the composition to form a metal oxide semiconductor layer (c);
Step (C): patterning and etching the metal oxide semiconductor layer (c);
Step (D): Etching the underlying insulating layer (b) using the patterned and etched metal oxide semiconductor layer (c) as a mask pattern;
Step (E): comprising a step of irradiating the substrate with excimer laser light or YAG laser light from above the substrate,
The step (E) is a step (E') of irradiating the substrate with both UV light and excimer laser light or YAG laser light from above the substrate;
A method for manufacturing a top-gate thin-film transistor.
（Ａ）工程：基板上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ａ）を形成し、該層（ａ）のパターニングとエッチングを行う工程、Step (A): a step of applying a composition for forming a metal oxide semiconductor layer on a substrate, baking the composition, forming a metal oxide semiconductor layer (a), and patterning and etching the layer (a);
（Ｂ）工程：パターニング及びエッチングされた金属酸化物半導体層（ａ）上に、絶縁層（ｂ）を形成し、該層（ｂ）の上に金属酸化物半導体層形成用組成物を塗布し焼成して金属酸化物半導体層（ｃ）を形成する工程、Step (B): forming an insulating layer (b) on the patterned and etched metal oxide semiconductor layer (a), and applying a metal oxide semiconductor layer-forming composition onto the insulating layer (b) and baking the composition to form a metal oxide semiconductor layer (c);
（Ｃ）工程：金属酸化物半導体層（ｃ）のパターニングとエッチングを行う工程、Step (C): A step of patterning and etching the metal oxide semiconductor layer (c);
（Ｄ）工程：パターニング及びエッチングされた金属酸化物半導体層（ｃ）をマスクパターンとして下層の絶縁層（ｂ）をエッチングする工程、Step (D): etching the underlying insulating layer (b) using the patterned and etched metal oxide semiconductor layer (c) as a mask pattern;
（Ｅ）工程：基板の上方からエキシマレーザー光又はＹＡＧレーザー光を照射する工程Step (E): A step of irradiating the substrate with excimer laser light or YAG laser light from above.
を含み、Including,
前記（Ｅ）工程が、基板の上方からＵＶ光を照射した後、エキシマレーザー光又はＹＡＧレーザー光を照射する（Ｅ”）工程である、The step (E) is a step (E″) of irradiating the substrate from above with UV light and then irradiating the substrate with excimer laser light or YAG laser light,
トップゲート型薄膜トランジスタの製造方法。A method for manufacturing a top-gate thin-film transistor.
請求項１乃至請求項４のうちいずれか一項に記載のトップゲート型薄膜トランジスタの製造方法。 In the steps (A) and (B), a composition for forming a metal oxide semiconductor layer is applied by spin coating under the same or different conditions and procedures, and heat-treated at 110° C. to 180° C. for 0.1 to 30 minutes. This operation of application and heat treatment is repeated 1 to 10 times, and then the resulting product is baked at 250° C. to 350° C. for 0.1 to 120 hours, thereby forming the metal oxide semiconductor layer (a) and the metal oxide semiconductor layer (c), respectively.
A method for manufacturing a top-gate type thin film transistor according to claim 1 .
請求項１乃至請求項５のうち何れか一項に記載のトップゲート型薄膜トランジスタの製造方法。 In the step (E), an excimer laser beam having a wavelength of 150 nm to 380 nm is irradiated at 50 mJ/cm 2 to 150 mJ/cm 2 for 1 nanosecond to 120 nanoseconds.
A method for manufacturing a top-gate type thin film transistor according to claim 1 .
請求項１乃至請求項５のうち何れか一項に記載のトップゲート型薄膜トランジスタの製造方法。 In the step (E), a YAG laser beam having a wavelength of 250 nm to 400 nm is irradiated at 50 mJ/cm 2 to 150 mJ/cm 2 for 1 nanosecond to 120 nanoseconds.
A method for manufacturing a top-gate type thin film transistor according to claim 1 .
請求項１乃至請求項７のうち何れか一項に記載のトップゲート型薄膜トランジスタの製造方法。 In the step (E), UV light having a wavelength of 150 nm to 350 nm is irradiated for 1 minute to 120 minutes.
A method for manufacturing a top-gate type thin film transistor according to claim 1 .
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019089093 | 2019-05-09 | ||
| JP2019089093 | 2019-05-09 | ||
| PCT/JP2020/017061 WO2020226045A1 (en) | 2019-05-09 | 2020-04-20 | Thin-film transistor and method for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020226045A1 JPWO2020226045A1 (en) | 2020-11-12 |
| JP7515119B2 true JP7515119B2 (en) | 2024-07-12 |
Family
ID=73050619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021518334A Active JP7515119B2 (en) | 2019-05-09 | 2020-04-20 | Thin film transistor and its manufacturing method |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7515119B2 (en) |
| TW (1) | TW202111775A (en) |
| WO (1) | WO2020226045A1 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206505A (en) | 2008-01-29 | 2009-09-10 | Semiconductor Energy Lab Co Ltd | Light-emitting device |
| JP2010080490A (en) | 2008-09-24 | 2010-04-08 | National Institute Of Advanced Industrial Science & Technology | Semiconductor element |
| US20120018718A1 (en) | 2010-07-21 | 2012-01-26 | National Chiao Tung University | Self-aligned top-gate thin film transistors and method for fabricating same |
| JP2014140005A (en) | 2012-12-20 | 2014-07-31 | Nippon Hoso Kyokai <Nhk> | Thin film transistor and manufacturing method of the same |
| JP2015109315A (en) | 2013-12-03 | 2015-06-11 | 出光興産株式会社 | Thin film transistor, manufacturing method of the same, oxide semiconductor layer, display device and semiconductor device |
| JP2015153909A (en) | 2014-02-14 | 2015-08-24 | 富士フイルム株式会社 | Metal complex composition, metal oxide thin film, method for producing the same, electronic element, thin-film transistor, display device, image sensor, and x-ray sensor |
-
2020
- 2020-04-20 TW TW109113217A patent/TW202111775A/en unknown
- 2020-04-20 WO PCT/JP2020/017061 patent/WO2020226045A1/en active Application Filing
- 2020-04-20 JP JP2021518334A patent/JP7515119B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206505A (en) | 2008-01-29 | 2009-09-10 | Semiconductor Energy Lab Co Ltd | Light-emitting device |
| JP2010080490A (en) | 2008-09-24 | 2010-04-08 | National Institute Of Advanced Industrial Science & Technology | Semiconductor element |
| US20120018718A1 (en) | 2010-07-21 | 2012-01-26 | National Chiao Tung University | Self-aligned top-gate thin film transistors and method for fabricating same |
| JP2014140005A (en) | 2012-12-20 | 2014-07-31 | Nippon Hoso Kyokai <Nhk> | Thin film transistor and manufacturing method of the same |
| JP2015109315A (en) | 2013-12-03 | 2015-06-11 | 出光興産株式会社 | Thin film transistor, manufacturing method of the same, oxide semiconductor layer, display device and semiconductor device |
| JP2015153909A (en) | 2014-02-14 | 2015-08-24 | 富士フイルム株式会社 | Metal complex composition, metal oxide thin film, method for producing the same, electronic element, thin-film transistor, display device, image sensor, and x-ray sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202111775A (en) | 2021-03-16 |
| JPWO2020226045A1 (en) | 2020-11-12 |
| WO2020226045A1 (en) | 2020-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5854231B2 (en) | Precursor composition for forming amorphous metal oxide semiconductor layer, method for producing amorphous metal oxide semiconductor layer, and method for producing semiconductor device | |
| US7947537B2 (en) | Metal oxide semiconductor, semiconductor element, thin film transistor and method of manufacturing thereof | |
| JP5640323B2 (en) | Metal oxide semiconductor manufacturing method, metal oxide semiconductor, and thin film transistor | |
| JP5763876B2 (en) | Thin film transistor and manufacturing method thereof | |
| Kim et al. | Mechanical bending of flexible complementary inverters based on organic and oxide thin film transistors | |
| JP2010258057A (en) | Metal oxide semiconductor, method of manufacturing the same, and thin film transistor using the same | |
| JP5132053B2 (en) | Method for producing organic thin film transistor | |
| Tan et al. | The annealing effects on the properties of solution-processed alumina thin film and its application in TFTs | |
| WO2010061721A1 (en) | Thin film transistor and method for manufacturing thin film transistor | |
| WO2010079581A1 (en) | Thin film transistor and method for manufacturing same | |
| JP2007150156A (en) | Transistor and method of manufacturing same | |
| JP2010283190A (en) | Thin film transistor and method of manufacturing the same | |
| Jung et al. | Toward ultraviolet solution processed ZrOx/IZO transistors with top-gate and dual-gate operation: Selection of solvents, precursors, stabilizers, and additive elements | |
| JPWO2010044332A1 (en) | Thin film transistor and manufacturing method thereof | |
| JP7515119B2 (en) | Thin film transistor and its manufacturing method | |
| JP2010147206A (en) | Thin-film transistor and method for manufacturing the same | |
| JP2010258206A (en) | Method for manufacturing metal oxide semiconductor, the metal oxide semiconductor, semiconductor element using the same, and thin-film transistor | |
| JP2010258018A (en) | Semiconductor thin film and thin-film transistor using the same | |
| KR20110025334A (en) | Method to control a crystallization behavior for low temperature-processed and solution-processable oxide semiconductor | |
| CN209747522U (en) | Double-layer metal oxide semiconductor heterojunction thin film transistor | |
| CN111180310A (en) | Method for patterning metal oxide film and application | |
| JP7217626B2 (en) | Method for producing coating-type metal oxide film | |
| Fan et al. | Organic thin-film transistor performance improvement using ammonia (NH3) plasma treatment on the gate insulator surface | |
| JP2010171237A (en) | Metal oxide semiconductor, method of manufacturing the same, and thin-film transistor using the same | |
| KR101115074B1 (en) | Method of forming zto thin film pattern, thin film transistor and manufacturing method thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210831 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230202 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240321 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240513 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240522 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240621 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7515119 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |