JP7504160B2 - 半導体装置の配線構造及びその形成方法 - Google Patents
半導体装置の配線構造及びその形成方法 Download PDFInfo
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- JP7504160B2 JP7504160B2 JP2022100845A JP2022100845A JP7504160B2 JP 7504160 B2 JP7504160 B2 JP 7504160B2 JP 2022100845 A JP2022100845 A JP 2022100845A JP 2022100845 A JP2022100845 A JP 2022100845A JP 7504160 B2 JP7504160 B2 JP 7504160B2
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Description
前記基板の上方に設けられる誘電体層と、
前記誘電体層内に設けられる導電性配線と、
を備え、
前記導電性配線は、
化学式MXn(式中、Mは遷移金属元素であり、Xはカルコゲン元素であり、且つnは0.5~2である)を有する材料を含有するバリア/接着層と、
前記バリア/接着層の上方に設けられる導電層と、を含む半導体装置の配線構造を提供する。
前記基板の上方に設けられる第1の誘電体層と、
前記第1の誘電体層内に設けられ、化学式MXn(式中、Mは遷移金属元素であり、Xはカルコゲン元素であり、且つnは0.5~2である)を有する第1の材料を含有する第1のバリア/接着層と前記第1のバリア/接着層の上方に設けられる第1の導電層とを含む導電性ビアと、
前記第1の誘電体層内及び前記導電性ビアの上方に設けられる第2の誘電体層と、
前記第2の誘電体層内に設けられ、前記第1の材料を含有する第2のバリア/接着層と前記第2のバリア/接着層の上方に設けられる第2の導電層とを含む導電線と、
を備える半導体装置の配線構造を提供する。
前記第1のバリア/接着層の上方に設けられる第1のシード層と、
前記第1のシード層の上方に設けられ、その天面が前記第1の誘電体層の天面と面一である第1の導電性充填層と、を含むことが好ましい。
前記第2のバリア/接着層の上方に設けられる第2のシード層と、
前記第2のシード層の上方に設けられ、その天面が前記第2の誘電体層の天面と面一である第2の導電性充填層と、を含むことが好ましい。
前記誘電体層に開口を形成するように、前記誘電体層をパターニングするステップと、
化学式MXn(式中、Mは遷移金属元素であり、Xはカルコゲン元素であり、且つnは0.5~2である)を有する材料を含有するバリア/接着層を、前記開口の底部及び複数の側壁に沿って形成するステップと、
を備え、
前記バリア/接着層を形成するステップは、
前記開口の前記底部及び前記複数の側壁に沿って前記遷移金属元素の層を堆積するステップと、
前記遷移金属元素の前記層にカルコゲン元素処理を実行するステップと、
前記開口において導電層を前記バリア/粘着層の上方に堆積するステップと、を含む半導体装置の配線構造の形成方法を提供する。
105…ゲート誘電体層、 107…ゲート電極、 109…スペーサ、
111…ソース/ドレイン領域、 113…ILD層、
115…ソース/ドレインコンタクトプラグ、 117…ゲートコンタクトプラグ、
119…配線構造、 1211…メタライズ層、 121M…メタライズ層、
1231…ESL、 123M…ESL、 1251…IMD層、
125M…IMD層、 127…開口、 129…バリア/接着層、
131…領域、 133…金属材料、 135…カルコゲン元素処理プロセス、
137…サブ層、 139…シード層、 1411…導電性ビア、
141M…導電性ビア、 1431…ESL、 143M…ESL、
1451…IMD層、 145M…IMD層、 147…開口、
149…バリア層、 151…接着層、 153…シード層、
155…導電性充填層、 1571…導電線、 157M…導電線、
160…方法、 161…ステップ、 163…ステップ、 200…半導体装置、
201…配線構造、 2031…メタライズ層、 203M…メタライズ層、
300…半導体装置、 301…配線構造、 3031…メタライズ層、
303M…メタライズ層、 305…シード層、 307…導電性充填層、
3091…導電性ビア、 309M…導電性ビア、 400…半導体装置、
401…配線構造、 4031…メタライズ層、 403M…メタライズ層、
500…半導体装置、 501…配線構造、 5031…メタライズ層、
503M…メタライズ層、 505…バリア/接着層、 5071…導電線、
507M…導電線、 600…半導体装置、 601…配線構造、
6031…メタライズ層、 603M…メタライズ層、 700…半導体装置、
701…配線構造、 7031…メタライズ層、 703M…メタライズ層、
800…半導体装置、 801…配線構造、 8031…メタライズ層、
803M…メタライズ層、 900…半導体装置、 901…配線構造、
9031…メタライズ層、 903M…メタライズ層、 9051…ESL、
905M…ESL、 9071…IMD層、 907M…IMD層、
909…シールドスタック、 909A…第1のシールド層、
909B…第2のシールド層、 911…開口、 911A…ビア開口、
911B…導線開口、 913…バリア/接着層、 915…シード層、
917…導電性充填層、 919A1…導電性ビア、 919B1…導電線、
919AM…導電性ビア、 919BM…導電線、 1000…半導体装置、
1001…配線構造、 10031…メタライズ層、 1003M…メタライズ層、
1005…シールド、 1007…開口、 1009…導電ポスト、
1011…バリア/接着層、 10131…被覆層、 1013M…被覆層、
10151…誘電体層(IMD層)、 1015M…IMD層、
10171…導電性ビア、 1017M…導電性ビア、 1100…半導体装置、
1101…配線構造、 11031…メタライズ層、
1103M…メタライズ層、 1200…半導体装置、
1201…配線構造、 12031…メタライズ層、 1203M…メタライズ層、
1300…半導体装置、 1301…配線構造、 13031…メタライズ層、
1303M…メタライズ層、 1400…半導体装置、 1401…配線構造、
14031…メタライズ層、 1403M…メタライズ層、 1500…半導体装置、
1501…配線構造、 15031…メタライズ層、 1503M…メタライズ層、
1600…半導体装置、 1601…配線構造、 16031…メタライズ層、
1603M…メタライズ層、 1700…半導体装置、 1701…配線構造、
17031…メタライズ層、 1703M…メタライズ層、 1800…半導体装置、
1801…配線構造、 18031…メタライズ層、 1803M…メタライズ層、
1805…バリア/接着層、 1807…金属材料、
1809…カルコゲン元素処理プロセス、 1811…処理された金属材料、
18131…導電性ビア、 1813M…導電性ビア、 1900…方法、
1901…ステップ、 1903…ステップ、 1905…ステップ、
2000…方法、 2001…ステップ、 2003…ステップ、
2005…ステップ、 2100…半導体装置、 2101…配線構造、
21031…メタライズ層、 2103M…メタライズ層、 2200…半導体装置、
2201…配線構造、 22031…メタライズ層、 2203M…メタライズ層、
2300…半導体装置、 2301…配線構造、 23031…メタライズ層、
2303M…メタライズ層、 2400…半導体装置、 2401…配線構造、
24031…メタライズ層、 2403M…メタライズ層、 2500…半導体装置、
2501…配線構造、 25031…メタライズ層、 2503M…メタライズ層、
2600…半導体装置、 2601…配線構造、 26031…メタライズ層、
2603M…メタライズ層、 2700…半導体装置、 2701…配線構造、
27031…メタライズ層、 2703M…メタライズ層、 2800…半導体装置、
2801…配線構造、 28031…メタライズ層、 28032…メタライズ層、
2803M…メタライズ層、 2900…スタック半導体装置、
2901…第1の半導体装置、 2903…第2の半導体装置、
2905…コネクタ、 2907…集積回路結晶粒、 2909…封止剤、
2911…導電ポスト、 2913…再分布構造、 2915…絶縁層、
2917…メタライズパターン、 2919…UBM、 2921…コネクタ、
2923…バリア/接着層、 2925…シード層、 2927…導電性充填層、
3000…スタック半導体装置、 3001…第1の半導体装置、
3003…パッケージ基板、 3005A~3005B…集積回路結晶粒、
3007…封止剤、 3009…再分布構造、 3011…コネクタ、
3013…アンダーフィル剤、 3015…基板コア、 3017…接合パッド、
3019…ビア、 3021…コネクタ、 3023…絶縁性ライナー、
3025…バリア/接着層、 3027…シード層、 3029…導電性充填層、
3100…半導体装置、 3101…集積回路結晶粒、 3103…封止剤、
3105…導電ポスト、 3107…アンテナ、 3109…第1の再分布構造、
3111…絶縁層、 3113…メタライズパターン、 3115…接着剤、
3117…第2の再分布構造、 3119…絶縁層、
3121…メタライズパターン、 3123…UBM、 3125…コネクタ、
3127…誘電体層、 3129…アンテナ、 3131…バリア/接着層、
3133…シード層、 3135…導電性充填層。
Claims (9)
- 基板と、
前記基板の上方に設けられる誘電体層と、
前記誘電体層内に設けられる導電性配線と、
を備え、
前記導電性配線は、
化学式MXn(式中、Mは遷移金属元素であり、Xはカルコゲン元素であり、且つnは0.5~2である)を有する単一遷移金属カルコゲン材料を含有し、前記単一遷移金属カルコゲン材料からなる複数のサブ層を含む階層構造を有するバリア/接着層と、
前記バリア/接着層の上方に設けられる導電層と、を含み、前記バリア/接着層の前記単一遷移金属カルコゲン材料が前記導電層および前記誘電体層と接触しているものである、半導体装置の配線構造。 - 前記導電層は、前記バリア/接着層の上方に設けられ、前記バリア/接着層と物理的に接触するシード層を含む請求項1に記載の配線構造。
- 基板と、
前記基板の上方に設けられる第1の誘電体層と、
前記第1の誘電体層内に設けられ、化学式MXn(式中、Mは遷移金属元素であり、Xはカルコゲン元素であり、且つnは0.5~2である)を有する第1の単一遷移金属カルコゲン材料を含有し、前記単一遷移金属カルコゲン材料からなる複数のサブ層を含む階層構造を有する第1のバリア/接着層と前記第1のバリア/接着層の上方に設けられる第1の導電層とを含み、前記第1のバリア/接着層の前記単一遷移金属カルコゲン材料が前記第1の導電層および前記第1の誘電体層と接触しているものである、導電性ビアと、
前記第1の誘電体層内及び前記導電性ビアの上方に設けられる第2の誘電体層と、
前記第2の誘電体層内に設けられ、前記第1の材料を含有する第2のバリア/接着層と前記第2のバリア/接着層の上方に設けられる第2の導電層とを含む導電線と、
を備える半導体装置の配線構造。 - 前記第1の導電層は、前記第1のバリア/接着層の上方に設けられ、前記導電性ビアの最上層である第1のシード層を含む請求項3に記載の配線構造。
- 前記第1の導電層は、
前記第1のバリア/接着層の上方に設けられる第1のシード層と、
前記第1のシード層の上方に設けられ、その天面が前記第1の誘電体層の天面と面一である第1の導電性充填層と、を含む請求項3に記載の配線構造。 - 前記第2の導電層は、前記第2のバリア/接着層の上方に設けられ、前記導電線の最上層である第2のシード層を含む請求項3~5のいずれか1項に記載の配線構造。
- 前記第2の導電層は、
前記第2のバリア/接着層の上方に設けられる第2のシード層と、
前記第2のシード層の上方に設けられ、その天面が前記第2の誘電体層の天面と面一である第2の導電性充填層と、を含む請求項3~5のいずれか1項に記載の配線構造。 - 基板の上方に誘電体層を形成するステップと、
前記誘電体層に開口を形成するように、前記誘電体層をパターニングするステップと、
化学式MXn(式中、Mは遷移金属元素であり、Xはカルコゲン元素であり、且つnは0.5~2である)を有する単一遷移金属カルコゲン材料を含有するバリア/接着層を、前記開口の底部及び複数の側壁に沿って形成するステップと、
を備え、
前記バリア/接着層を形成するステップは、
前記開口の前記底部及び前記複数の側壁に沿って前記遷移金属元素の層を堆積するステップと、
前記遷移金属元素の前記層に400℃~800℃程度の温度でカルコゲン元素処理を実行し、前記バリア/接着層が前記単一遷移金属カルコゲン材料からなる複数のサブ層を含む階層構造を有するようにするステップと、
前記開口において導電層を前記バリア/接着層の上方に堆積するステップと、を含み、前記バリア/接着層の前記単一遷移金属カルコゲン材料が前記導電層および前記誘電体層と接触していることとする、半導体装置の配線構造の形成方法。 - 前記カルコゲン元素処理を実行するステップは、前記カルコゲン元素を含む前駆体によって、プラズマ励起化学気相堆積(PECVD)プロセスを実行することを含む請求項8に記載の方法。
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