JP7479498B2 - 半導体試験装置および半導体試験方法 - Google Patents

半導体試験装置および半導体試験方法 Download PDF

Info

Publication number
JP7479498B2
JP7479498B2 JP2022555295A JP2022555295A JP7479498B2 JP 7479498 B2 JP7479498 B2 JP 7479498B2 JP 2022555295 A JP2022555295 A JP 2022555295A JP 2022555295 A JP2022555295 A JP 2022555295A JP 7479498 B2 JP7479498 B2 JP 7479498B2
Authority
JP
Japan
Prior art keywords
constant current
electrode
semiconductor
current source
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022555295A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022074952A1 (https=
Inventor
学 中西
幸一 高山
和起 上野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2022074952A1 publication Critical patent/JPWO2022074952A1/ja
Application granted granted Critical
Publication of JP7479498B2 publication Critical patent/JP7479498B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2022555295A 2020-10-05 2021-08-25 半導体試験装置および半導体試験方法 Active JP7479498B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020168349 2020-10-05
JP2020168349 2020-10-05
PCT/JP2021/031177 WO2022074952A1 (ja) 2020-10-05 2021-08-25 半導体試験装置および半導体試験方法

Publications (2)

Publication Number Publication Date
JPWO2022074952A1 JPWO2022074952A1 (https=) 2022-04-14
JP7479498B2 true JP7479498B2 (ja) 2024-05-08

Family

ID=81125779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022555295A Active JP7479498B2 (ja) 2020-10-05 2021-08-25 半導体試験装置および半導体試験方法

Country Status (3)

Country Link
JP (1) JP7479498B2 (https=)
CN (1) CN116325104A (https=)
WO (1) WO2022074952A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120188268A (zh) * 2022-11-17 2025-06-20 三菱电机株式会社 半导体试验装置、半导体试验方法以及半导体装置的制造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006071467A (ja) 2004-09-02 2006-03-16 Toyota Industries Corp 半導体チップの電気特性測定方法及び装置
JP2011138865A (ja) 2009-12-28 2011-07-14 Micronics Japan Co Ltd 半導体デバイスの検査装置
JP2012151323A (ja) 2011-01-20 2012-08-09 Toshiba Corp 半導体装置およびその製造方法
JP2014036105A (ja) 2012-08-08 2014-02-24 Mitsubishi Electric Corp 半導体装置の測定方法、測定器
JP2018179618A (ja) 2017-04-06 2018-11-15 トヨタ自動車株式会社 半導体素子の検査装置
JP2019125642A (ja) 2018-01-15 2019-07-25 信越半導体株式会社 半導体装置の評価装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0233437U (https=) * 1988-08-26 1990-03-02

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006071467A (ja) 2004-09-02 2006-03-16 Toyota Industries Corp 半導体チップの電気特性測定方法及び装置
JP2011138865A (ja) 2009-12-28 2011-07-14 Micronics Japan Co Ltd 半導体デバイスの検査装置
JP2012151323A (ja) 2011-01-20 2012-08-09 Toshiba Corp 半導体装置およびその製造方法
JP2014036105A (ja) 2012-08-08 2014-02-24 Mitsubishi Electric Corp 半導体装置の測定方法、測定器
JP2018179618A (ja) 2017-04-06 2018-11-15 トヨタ自動車株式会社 半導体素子の検査装置
JP2019125642A (ja) 2018-01-15 2019-07-25 信越半導体株式会社 半導体装置の評価装置

Also Published As

Publication number Publication date
CN116325104A (zh) 2023-06-23
WO2022074952A1 (ja) 2022-04-14
JPWO2022074952A1 (https=) 2022-04-14

Similar Documents

Publication Publication Date Title
US10746788B2 (en) Sensing structure of alignment of a probe for testing integrated circuits
US11428722B2 (en) Resistance test method using kelvin structure
US9140734B2 (en) Measuring apparatus and measuring method
US11041900B2 (en) Equi-resistant probe distribution for high-accuracy voltage measurements at the wafer level
TW201915500A (zh) 電阻測定裝置、基板檢查裝置以及電阻測定方法
WO2007145156A1 (ja) 基板検査装置
JP7479498B2 (ja) 半導体試験装置および半導体試験方法
TWI510794B (zh) 基板檢測裝置及基板檢測方法
US20210156902A1 (en) Semiconductor chip and circuit and method for electrically testing semiconductor chip
JP2019176080A (ja) 導通検査装置、プローバ、及び除電装置
US9470719B2 (en) Testing semiconductor devices
JP7829726B2 (ja) 半導体試験装置、半導体試験方法および半導体装置の製造方法
CN116008659B (zh) 电阻测试结构及其测试方法
JP2025012000A (ja) 半導体試験装置、半導体試験方法および半導体素子の製造方法
JP2024165266A (ja) 試験方法
JP2011059085A (ja) 半導体装置及びその検査方法
CN117805568A (zh) 测试接触电阻的方法、晶圆以及晶圆测试系统
JP2006126197A (ja) 汎用テスト治具
US3445769A (en) Method and apparatus for in-circuit semiconductor characteristic measurements by establishing a predetermined voltage across the semiconductor and an externally connected impedance
CN116540048B (zh) 半导体测试方法及测试结构
Chagawa et al. Measurement of the MOSFET drain current variation under high gate voltage
JPH04253351A (ja) 接触抵抗の測定方法
JPH0613441A (ja) 半導体集積回路装置の検査測定方法
TW201910785A (zh) 電壓表及其使用方法
JPH04290263A (ja) Mosトランジスタの測定方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230112

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240326

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240423

R150 Certificate of patent or registration of utility model

Ref document number: 7479498

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150