JP7442013B2 - 診断装置、診断方法、半導体製造装置システム及び半導体装置製造システム - Google Patents

診断装置、診断方法、半導体製造装置システム及び半導体装置製造システム Download PDF

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Publication number
JP7442013B2
JP7442013B2 JP2023500380A JP2023500380A JP7442013B2 JP 7442013 B2 JP7442013 B2 JP 7442013B2 JP 2023500380 A JP2023500380 A JP 2023500380A JP 2023500380 A JP2023500380 A JP 2023500380A JP 7442013 B2 JP7442013 B2 JP 7442013B2
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deterioration
degree
components
semiconductor manufacturing
maintenance
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JPWO2023148967A1 (https=
Inventor
祥太 梅田
誠浩 角屋
涼次 朝倉
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B23/00—Testing or monitoring of control systems or parts thereof
    • G05B23/02—Electric testing or monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3288—Maintenance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing And Monitoring For Control Systems (AREA)
JP2023500380A 2022-02-07 2022-02-07 診断装置、診断方法、半導体製造装置システム及び半導体装置製造システム Active JP7442013B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/004679 WO2023148967A1 (ja) 2022-02-07 2022-02-07 診断装置、診断方法、半導体製造装置システム及び半導体装置製造システム

Publications (2)

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JPWO2023148967A1 JPWO2023148967A1 (https=) 2023-08-10
JP7442013B2 true JP7442013B2 (ja) 2024-03-01

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JP2023500380A Active JP7442013B2 (ja) 2022-02-07 2022-02-07 診断装置、診断方法、半導体製造装置システム及び半導体装置製造システム

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Country Link
US (1) US20240395518A1 (https=)
JP (1) JP7442013B2 (https=)
KR (1) KR102863239B1 (https=)
CN (1) CN116897411A (https=)
TW (1) TWI854452B (https=)
WO (1) WO2023148967A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250040892A (ko) * 2023-09-15 2025-03-25 주식회사 히타치하이테크 프로세스 처리 장치의 진단 장치, 진단 시스템, 및 진단 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010283000A (ja) 2009-06-02 2010-12-16 Renesas Electronics Corp 半導体製造における装置異常の予兆検知方法
JP2012009064A (ja) 2011-09-05 2012-01-12 Toshiba Corp 学習型プロセス異常診断装置、およびオペレータ判断推測結果収集装置
WO2018061842A1 (ja) 2016-09-27 2018-04-05 東京エレクトロン株式会社 異常検知プログラム、異常検知方法および異常検知装置
WO2020152889A1 (ja) 2019-07-30 2020-07-30 株式会社日立ハイテク 装置診断装置、プラズマ処理装置及び装置診断方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6421457B1 (en) * 1999-02-12 2002-07-16 Applied Materials, Inc. Process inspection using full and segment waveform matching
US7413672B1 (en) * 2006-04-04 2008-08-19 Lam Research Corporation Controlling plasma processing using parameters derived through the use of a planar ion flux probing arrangement
EP2254112B1 (en) * 2008-03-21 2017-12-20 Tokyo University Of Science Educational Foundation Administrative Organization Noise suppression devices and noise suppression methods
US20100076729A1 (en) * 2008-09-19 2010-03-25 Applied Materials, Inc. Self-diagnostic semiconductor equipment
WO2011002811A2 (en) * 2009-06-30 2011-01-06 Lam Research Corporation Arrangement for identifying uncontrolled events at the process module level and methods thereof
US9200950B2 (en) * 2014-02-25 2015-12-01 Applied Materials, Inc. Pulsed plasma monitoring using optical sensor and a signal analyzer forming a mean waveform
EP3796362A1 (en) * 2019-09-23 2021-03-24 TRUMPF Huettinger Sp. Z o. o. Method of plasma processing a substrate in a plasma chamber and plasma processing system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010283000A (ja) 2009-06-02 2010-12-16 Renesas Electronics Corp 半導体製造における装置異常の予兆検知方法
JP2012009064A (ja) 2011-09-05 2012-01-12 Toshiba Corp 学習型プロセス異常診断装置、およびオペレータ判断推測結果収集装置
WO2018061842A1 (ja) 2016-09-27 2018-04-05 東京エレクトロン株式会社 異常検知プログラム、異常検知方法および異常検知装置
WO2020152889A1 (ja) 2019-07-30 2020-07-30 株式会社日立ハイテク 装置診断装置、プラズマ処理装置及び装置診断方法

Also Published As

Publication number Publication date
US20240395518A1 (en) 2024-11-28
KR20230120121A (ko) 2023-08-16
TW202333073A (zh) 2023-08-16
TWI854452B (zh) 2024-09-01
CN116897411A (zh) 2023-10-17
WO2023148967A1 (ja) 2023-08-10
KR102863239B1 (ko) 2025-09-22
JPWO2023148967A1 (https=) 2023-08-10

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