JP7431521B2 - Manufacturing method of semiconductor device - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor device.

Conventionally, by applying tension to a first adhesive sheet to which a semiconductor member is attached, and forming the semiconductor member into a plurality of semiconductor elements, a second adhesive sheet, which has been separated into pieces, is attached to each of the plurality of semiconductor elements. A method for manufacturing a semiconductor device is known (for example, see Patent Document 1).

Japanese Patent Application Publication No. 2015-211081

In the method for manufacturing a semiconductor device described in Patent Document 1, tension applied to the dicing tape 1 (first adhesive sheet) is transmitted to the semiconductor wafer 4 (semiconductor member) via the die bond film 3 (second adhesive sheet). In order to form a plurality of semiconductor chips 5 (semiconductor elements) and to form a semiconductor device in which a second adhesive sheet is attached to each semiconductor element, the tension and flow of the second adhesive sheet are controlled. As a result, the position of the semiconductor device relative to the first adhesive sheet is shifted, and the mutual spacing between the semiconductor elements becomes uneven, which is disadvantageous.

An object of the present invention is to prevent as much as possible the mutual spacing of semiconductor devices from becoming uneven when forming a semiconductor device in which a second adhesive sheet is attached to each of a plurality of semiconductor elements. It is an object of the present invention to provide a method for manufacturing a semiconductor device that can perform the following steps.

The present invention employs the configuration described in the claims.

According to the present invention, after the second adhesive sheet is attached to a plurality of semiconductor elements whose mutual spacing is widened, the second adhesive sheet is cut into pieces to form a semiconductor device. , the influence of tension, flow, etc. of the second adhesive sheet does not affect the semiconductor element, and when forming a semiconductor device in which a plurality of semiconductor elements are each affixed with a second adhesive sheet separated into pieces, It is possible to prevent the mutual spacing of the semiconductor devices from becoming uneven as much as possible.
Furthermore, if the second adhesive sheet is cut by blowing a fluid onto the second adhesive sheet, the second adhesive sheet can be cut without damaging the semiconductor element as much as possible. By cutting the second adhesive sheet, the second adhesive sheet can be reliably cut.

(A) to (E) are explanatory diagrams of a method for manufacturing a semiconductor device according to an embodiment of the present invention. (A) to (C) are explanatory diagrams of a method for manufacturing a semiconductor device according to a modification of the present invention.

Hereinafter, one embodiment of the present invention will be described based on the drawings.
Note that the X-axis, Y-axis, and Z-axis in this embodiment are orthogonal to each other, and the X-axis and Y-axis are axes within a predetermined plane, and the Z-axis is an axis perpendicular to the predetermined plane. do. Furthermore, in this embodiment, when directions are shown based on the view from the front side of FIG. ``Left'' is the direction of the arrow on the X-axis, ``Right'' is the opposite direction, ``Front'' is the front direction in FIG. 1 parallel to the Y-axis, and ``Rear'' is the opposite direction.

A method for manufacturing the semiconductor device EA will be described with reference to FIG.
First, as shown in FIG. 1A, a worker (hereinafter simply referred to as "worker") who carries out the manufacturing method of the semiconductor device EA or a pressing means such as a pressing roller (not shown), as shown in FIG. A first adhesive sheet AS1 is attached to a semiconductor wafer (hereinafter also simply referred to as "wafer") WF and a ring frame RF as a frame member (first adhesive sheet attaching step). Note that a predetermined circuit is formed on the circuit surface WF1 of the wafer WF.

Next, as shown in FIG. 1(B), a partition forming means 10 such as a laser irradiation device focuses laser light inside the wafer WF to form a modified layer ML inside the wafer WF. The wafer WF is made into a state where it can be singulated into semiconductor chips (hereinafter also simply referred to as "chips") CP as a plurality of semiconductor elements (section formation step).

Thereafter, as shown in FIG. 1(C), the first support means 20 such as a mechanical chuck or chuck cylinder that supported the ring frame RF, and the stand or table that supported the wafer WF via the first adhesive sheet AS1. The second support means 30 is moved relative to the first adhesive sheet AS1 to which the wafer WF is attached, and tension is applied to the first adhesive sheet AS1 to which the wafer WF is attached, thereby forming a plurality of chips CP from the wafer WF and adjusting the mutual spacing between the chips CP. Spread out (separation process).

Next, as shown in FIG. 1(D), the second adhesive sheet AS2 is attached to the plurality of chips CP with widened mutual intervals by an operator or a pressing means 40 such as a pressing roller (attachment step).

Then, as shown in FIG. 1E, the second adhesive sheet AS2 is cut into pieces along the gaps between the plurality of chips CP, and the second adhesive sheet AS2 is attached to each chip CP. A semiconductor device EA to which is pasted is formed (cutting step). In addition, in the cutting process in this embodiment, the second adhesive sheet AS2 is cut by blowing air AR as a fluid onto the second adhesive sheet AS2 using a cutting means 50 such as a nozzle or a hose. , an operator may cut the second adhesive sheet AS2.

The semiconductor device EA formed as described above is removed from the first adhesive sheet AS1 by an operator or a transport means (not shown) such as an articulated robot or a belt conveyor, and is laminated onto a lead frame, a substrate, etc. (not shown). (Lamination process). Next, when the required number of semiconductor devices EA is removed from the first adhesive sheet AS1, an operator or a transport means (not shown) places the ring frame RF to which the first adhesive sheet AS1 is attached to a collection box, a collection bag, etc. (not shown). It is collected by a collection means (recovery step), and the same steps described above are repeated thereafter.

According to the embodiment described above, after the second adhesive sheet AS2 is attached to a plurality of chips CP with increased mutual intervals, the second adhesive sheet AS2 is separated into pieces to form the semiconductor device EA. When increasing the mutual spacing between the CPs, the chip CP is not affected by the tension, flow, etc. of the second adhesive sheet AS2, and the individualized second adhesive sheet AS2 is attached to each of the plurality of chips CP. When forming the semiconductor devices EA, it is possible to prevent the mutual spacing between the semiconductor devices EA from becoming uneven as much as possible.

As mentioned above, although the best configuration, method, etc. for carrying out the present invention are disclosed in the above description, the present invention is not limited thereto. That is, although the present invention has been particularly illustrated and described primarily with respect to particular embodiments, there are modifications in shape, shape, and shape to the embodiments described above without departing from the spirit and scope of the invention. Those skilled in the art can make various modifications in materials, quantities, and other detailed configurations. In addition, the descriptions that limit the shape, material, etc. disclosed above are described as examples to facilitate understanding of the present invention, and do not limit the present invention. Descriptions of names of members that exclude some or all of the limitations such as these are included in the present invention.

For example, in the first adhesive sheet attaching step, a known sheet attaching device may be used, or the first adhesive sheet AS1 may be attached to the wafer WF and the ring frame RF by spraying gas or liquid such as air or gas. Alternatively, a single first adhesive sheet AS1 may be attached to the wafer WF and the ring frame RF, or the first adhesive sheet AS1 to which the ring frame RF is attached may be attached to the wafer WF. The first adhesive sheet AS1 to which WF is attached may be attached to the ring frame RF, or the first adhesive sheet AS1 may be attached to the wafer WF without using the ring frame RF. The first adhesive sheet AS1 may be attached to the opposite surface.
The first adhesive sheet pasting step may or may not be carried out in the manufacturing method of the semiconductor device EA, and if not carried out, the first adhesive sheet pasting step may be carried out in the method of manufacturing the semiconductor device EA. A wafer WF may be used.

In the partition forming step, the partition forming means 10 chemically forms a modified layer ML on the wafer WF using weakening means such as a chemical application device or a cutting device, or half-cuts the wafer WF to form grooves or notches. The wafer WF may be made into a state where it can be singulated into a plurality of chips CP by The WF may be completely cut and divided into a plurality of chips CP.
The partition forming step may or may not be performed in the manufacturing method of the semiconductor device EA, and if it is not performed, a wafer WF that can be singulated into a plurality of chips CP in advance may be used. good.

In the separating step, the mutual spacing between the chips CP may be increased by moving the second support means 30 without or while moving the first support means 20, or without moving the second support means 30. The first support means 20 may be moved to increase the mutual spacing between the chips CP, and the first adhesive sheet AS1 may be provided with four directions, for example, right, left, front and rear, right and left two directions. The mutual spacing between the chips CP may be increased by applying tension in three directions, front left, rear left, and right, or in five or more directions including front, rear, left, and right components. The first support means 20 and the second support means 30 may be moved relative to each other by an articulated robot, a driving device, etc., or if the ring frame RF is not used, the first adhesive sheet AS1 may be moved by the first support means 20. The first support means 20 and the second support means 30 may be moved relative to each other.
Before the separation step, a re-covering step may be performed in which the wafer WF is replaced from the first adhesive sheet AS1 to a third adhesive sheet (not shown) as the first adhesive sheet by an operator or a known transfer device. In this case, in the spacing step, tension may be applied to the third adhesive sheet (not shown) to widen the mutual spacing between the plurality of chips CP.
The separation process may not form the plurality of chips CP from the wafer WF, and the mutual spacing between the plurality of chips CP divided in the previous stage of the separation process may be increased.

In the pasting step, a known sheet pasting device may be used, the second adhesive sheet AS2 may be pasted on the plurality of chips CP by spraying gas such as air or gas, or liquid, or the first adhesive sheet AS2 may be pasted on the plurality of chips CP. When the first adhesive sheet AS1 is attached to the surface opposite to the circuit surface WF1 in the process, the second adhesive sheet AS2 may be attached to the circuit surface CP1 of the chip CP.
Before the pasting process, a worker or a known transfer device may carry out a re-covering process in which the chip CP is pasted from the first adhesive sheet AS1 to a third adhesive sheet (not shown); in this case, in the pasting process, , a second adhesive sheet AS2 is attached to a plurality of chips CP spaced apart from each other via a third adhesive sheet (not shown).

In the cutting process, the second adhesive sheet AS2 may be cut by spraying fluid all at once onto the region where a plurality of chips CP exist, or as shown by the chain double-dashed line in FIG. The second adhesive sheet AS2 may be cut so that the second adhesive sheet AS2 is also pasted on the side surface, or the second adhesive sheet AS2 may be heated with a coil heater or heat during the pasting process or between the pasting process and the cutting process. As shown in FIG. 2A, the second adhesive sheet AS2 is applied to the gaps between the plurality of chips CP by heating with a heating means such as a heating side of a pipe or by pressing with a pressing member such as a rod or blade. As shown in FIG. 2(B), by peeling the first adhesive sheet AS1 from the ring frame RF, the second adhesive sheet AS1 attached to the first adhesive sheet AS1 is removed. The second adhesive sheet AS2 may be cut by pulling the adhesive sheet AS2 region, or the first adhesive sheet AS1 may be inserted into the gaps between the plurality of chips CP and attached to the second adhesive sheet AS2, and then the first adhesive sheet AS2 may be cut. The second adhesive sheet AS2 may be cut by peeling AS1 from the ring frame RF, or the second adhesive sheet AS2 may be cut by an operator or a known cutting device.
The fluid sprayed in the cutting process may be a gas such as hot air, cold air, the atmosphere, a single gas, or a mixed gas, or may be a liquid such as water or oil, a gel-like material, or the like.

In addition to the ring frame RF, the frame member may have a non-annular shape (the outer periphery is not connected), a circle, an ellipse, a polygon larger than a triangle, or other shapes.
Before the first adhesive sheet pasting process, between the first adhesive sheet pasting process and the compartment forming process, between the compartment forming process and the separating process, or between the separating process and pasting process, use a grindstone, file, sandpaper, etc. , a grinding process of grinding the wafer WF to a predetermined thickness using a grinding means 60 (see FIG. 2(C)) such as a wire saw or a grinder, or a partition forming process as shown in FIG. 2(C). By performing a grinding process between the process and the separation process, a crack CU is formed in the wafer WF using the modified layer ML as a trigger by using the force applied to the wafer WF in the grinding process, and the wafer WF is removed. A dividing step may be performed in which the chip CP is divided into a plurality of chips CP.
After the cutting step, a side surface pasting step may be performed in which the second adhesive sheet AS2 is pasted on the side surface of the chip CP.
The stacking process and the collecting process may or may not be carried out in the manufacturing method of the semiconductor device EA.

The materials, types, shapes, etc. of the first and second adhesive sheets AS1 and AS2, the semiconductor member, and the semiconductor element are not particularly limited. For example, the first and second adhesive sheets AS1 and AS2, the semiconductor member, and the semiconductor element may have a circular shape, an oval shape, a polygonal shape such as a triangle or a quadrangular shape, or other shapes, and the first and second adhesive sheets AS1 and AS2 may be of an adhesive type such as pressure-sensitive adhesive or heat-sensitive adhesive, and when heat-sensitive adhesive first and second adhesive sheets AS1 and AS2 are adopted, the first, Adhesion may be performed by any suitable method such as providing heating means such as a suitable coil heater or heat pipe on the heating side to heat the second adhesive sheets AS1 and AS2. In addition, such first and second adhesive sheets AS1 and AS2 may be, for example, a single-layer adhesive sheet with only an adhesive layer, a sheet with an intermediate layer between the base sheet and the adhesive layer, or a base sheet with an intermediate layer between the base sheet and the adhesive layer. It may be a sheet with three or more layers, such as a cover layer on the top surface, or a so-called double-sided adhesive sheet in which the base sheet can be peeled off from the adhesive layer. Alternatively, it may have multiple intermediate layers, or may have a single layer or multiple layers without an intermediate layer. Further, as semiconductor members, for example, semiconductor wafers such as silicon semiconductor wafers and compound semiconductor wafers, semiconductor substrates, lead frames, etc. can be targeted. Note that the first and second adhesive sheets AS1 and AS2 can be read in terms of functionality and usage, such as any sheet or film of any shape such as a protective sheet, dicing tape, die attach film, die bonding tape, etc. The tape or the like can be attached to any semiconductor member as described above.

The means and steps in the present invention are not limited in any way as long as they can perform the operations, functions, or steps described with respect to the means and steps; It is not limited to the process at all. For example, if the separating step applies tension to the first adhesive sheet to which the semiconductor member is attached and widens the mutual spacing between the plurality of semiconductor elements formed from the semiconductor member, then the separating step is based on the common general technical knowledge at the time of filing. In addition, there is no limitation in any way as long as it falls within the technical scope (descriptions of other means and steps will be omitted).
Furthermore, the drive devices in the embodiments include electric devices such as rotary motors, direct-acting motors, linear motors, single-axis robots, and articulated robots, actuators such as air cylinders, hydraulic cylinders, rodless cylinders, and rotary cylinders. In addition, it is also possible to directly or indirectly combine them (some of them overlap with those exemplified in the embodiment).
In the above embodiment, when a pressing means such as a pressing roller or a pressing head or a pressing member that presses the object to be pressed is employed, a roller, a round bar, A member such as a blade, rubber, resin, or sponge may be used, or a configuration may be adopted in which pressure is applied by blowing air or gas, or the material to be pressed may be a deformable member such as rubber or resin. It may be composed of a member that does not deform, or a support (holding) means or a support (holding) member that supports (holds) the supported member (held member). If it is, it may be exposed to gripping means such as mechanical chucks or chuck cylinders, Coulomb force, adhesives (adhesive sheets, adhesive tapes), adhesives (adhesive sheets, adhesive tapes), magnetic force, Bernoulli adsorption, suction adsorption, drive equipment, etc. A structure that supports (holds) the support member may be adopted, or a structure that cuts the member to be cut, such as a cutting means or a cutting member, or forms a groove, a cut, a cutting line, etc. in the member to be cut, may be adopted. If so, a cutter blade, laser cutter, ion beam, thermal power, heat, water pressure, heating wire, spraying of gas or liquid, etc. may be used instead of or in combination with the above examples. Alternatively, the material to be cut may be moved and cut using a combination of appropriate drive devices.

AS1...First adhesive sheet AS2...Second adhesive sheet CP...Semiconductor chip (semiconductor element)
EA...Semiconductor device WF...Semiconductor wafer (semiconductor component)

Claims (3)

forming a modified layer inside the semiconductor member to which the first adhesive sheet is attached;
a separating step of applying tension to the first adhesive sheet to which the semiconductor member is attached to widen the mutual spacing between the plurality of semiconductor elements formed from the semiconductor member;
an attaching step of attaching a second adhesive sheet to the plurality of semiconductor elements that have been attached to the first adhesive sheet and are spaced apart from each other;
a cutting step of cutting the second adhesive sheet into pieces along gaps between the plurality of semiconductor elements to form a semiconductor device in which the second adhesive sheet is attached to each semiconductor element; A method for manufacturing a semiconductor device, characterized by carrying out the following steps. 2. The method of manufacturing a semiconductor device according to claim 1, wherein in the cutting step, the second adhesive sheet is cut by spraying a fluid onto the second adhesive sheet. 3. The method of manufacturing a semiconductor device according to claim 2, wherein hot air is used as the fluid in the cutting step.

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