JP7420270B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7420270B2
JP7420270B2 JP2022547391A JP2022547391A JP7420270B2 JP 7420270 B2 JP7420270 B2 JP 7420270B2 JP 2022547391 A JP2022547391 A JP 2022547391A JP 2022547391 A JP2022547391 A JP 2022547391A JP 7420270 B2 JP7420270 B2 JP 7420270B2
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hole
tungsten
insulating film
semiconductor substrate
interlayer insulating
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Japanese (ja)
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JPWO2022054328A1 (https=
JPWO2022054328A5 (https=
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徹 白川
泰典 阿形
直樹 三枝
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/232—Emitter electrodes for IGBTs
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10D64/60—Electrodes characterised by their materials
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/931—Shapes of bond pads
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    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
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    • H10W72/951—Materials of bond pads
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    • H10W74/476—Organic materials comprising silicon

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JP2022547391A 2020-09-11 2021-04-08 半導体装置 Active JP7420270B2 (ja)

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US (3) US12165998B2 (https=)
JP (3) JP7420270B2 (https=)
CN (2) CN115176344A (https=)
DE (2) DE112021000466T5 (https=)
WO (2) WO2022054327A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7586796B2 (ja) 2021-09-21 2024-11-19 株式会社東芝 半導体装置及び半導体装置の製造方法
US20260092763A1 (en) * 2023-09-22 2026-04-02 Excelitas Technologies Corp. Detonator with integrated solid-state fireset

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003069021A (ja) 2001-08-29 2003-03-07 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2016122835A (ja) 2014-12-03 2016-07-07 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ トレンチ電極を備えた半導体デバイス
WO2017029748A1 (ja) 2015-08-20 2017-02-23 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置、自動車および鉄道車両
WO2017168735A1 (ja) 2016-03-31 2017-10-05 新電元工業株式会社 パワー半導体装置及びパワー半導体装置の製造方法
JP2018014392A (ja) 2016-07-20 2018-01-25 ローム株式会社 半導体装置およびその製造方法
WO2018056233A1 (ja) 2016-09-20 2018-03-29 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2019161181A (ja) 2018-03-16 2019-09-19 株式会社 日立パワーデバイス 半導体装置、パワーモジュールおよび電力変換装置
JP2020098881A (ja) 2018-12-19 2020-06-25 富士電機株式会社 半導体装置

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US5153696A (en) 1989-12-29 1992-10-06 Nec Corporation MOS FET with current sensing terminal
JP4205914B2 (ja) * 2002-08-27 2009-01-07 株式会社ルネサステクノロジ 半導体装置の製造方法及び製造装置
JP4791015B2 (ja) * 2004-09-29 2011-10-12 ルネサスエレクトロニクス株式会社 縦型ｍｏｓｆｅｔ
JP2007227556A (ja) 2006-02-22 2007-09-06 Nec Electronics Corp 半導体装置
JP4600563B2 (ja) * 2007-10-24 2010-12-15 株式会社デンソー 半導体装置及びその製造方法
JP5101575B2 (ja) * 2009-07-28 2012-12-19 株式会社東芝 半導体装置およびその製造方法
JP2011044503A (ja) * 2009-08-19 2011-03-03 Sharp Corp 半導体装置の製造方法、及び、半導体装置
JP2012244071A (ja) * 2011-05-23 2012-12-10 Semiconductor Components Industries Llc 絶縁ゲート型半導体装置
JP2014192351A (ja) 2013-03-27 2014-10-06 Mitsubishi Electric Corp 半導体装置の製造方法
US9209109B2 (en) * 2013-07-15 2015-12-08 Infineon Technologies Ag IGBT with emitter electrode electrically connected with an impurity zone
JP2016004877A (ja) 2014-06-16 2016-01-12 ルネサスエレクトロニクス株式会社 半導体装置および電子装置
WO2016114057A1 (ja) * 2015-01-16 2016-07-21 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2017022311A (ja) 2015-07-14 2017-01-26 ルネサスエレクトロニクス株式会社 半導体装置
JP6941502B2 (ja) * 2016-09-30 2021-09-29 ローム株式会社 半導体装置および半導体パッケージ
JP2018152514A (ja) 2017-03-14 2018-09-27 富士電機株式会社 半導体装置の製造方法および半導体装置
WO2018167925A1 (ja) * 2017-03-16 2018-09-20 三菱電機株式会社 半導体装置
CN111052394B (zh) * 2018-03-15 2024-01-16 富士电机株式会社 半导体装置
JP7283036B2 (ja) * 2018-07-13 2023-05-30 富士電機株式会社 半導体装置および製造方法
JP7073984B2 (ja) 2018-08-23 2022-05-24 株式会社デンソー 半導体装置
JP2020035847A (ja) 2018-08-29 2020-03-05 トヨタ自動車株式会社 半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003069021A (ja) 2001-08-29 2003-03-07 Sanken Electric Co Ltd 半導体装置及びその製造方法
JP2016122835A (ja) 2014-12-03 2016-07-07 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ トレンチ電極を備えた半導体デバイス
WO2017029748A1 (ja) 2015-08-20 2017-02-23 株式会社日立製作所 半導体装置、パワーモジュール、電力変換装置、自動車および鉄道車両
WO2017168735A1 (ja) 2016-03-31 2017-10-05 新電元工業株式会社 パワー半導体装置及びパワー半導体装置の製造方法
JP2018014392A (ja) 2016-07-20 2018-01-25 ローム株式会社 半導体装置およびその製造方法
WO2018056233A1 (ja) 2016-09-20 2018-03-29 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2019161181A (ja) 2018-03-16 2019-09-19 株式会社 日立パワーデバイス 半導体装置、パワーモジュールおよび電力変換装置
JP2020098881A (ja) 2018-12-19 2020-06-25 富士電機株式会社 半導体装置

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US20220392858A1 (en) 2022-12-08
JP2024038324A (ja) 2024-03-19
US20220392815A1 (en) 2022-12-08
CN115152034A (zh) 2022-10-04
DE112021000466T5 (de) 2022-10-27
JPWO2022054327A1 (https=) 2022-03-17
JPWO2022054328A1 (https=) 2022-03-17
US12165998B2 (en) 2024-12-10
WO2022054327A1 (ja) 2022-03-17
DE112021000458T5 (de) 2022-10-27
US12431448B2 (en) 2025-09-30
CN115152034B (zh) 2026-04-17
JP7782593B2 (ja) 2025-12-09
WO2022054328A1 (ja) 2022-03-17
US20250096169A1 (en) 2025-03-20
JP7435804B2 (ja) 2024-02-21

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