JP7420234B2 - 圧電デバイス - Google Patents
圧電デバイス Download PDFInfo
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- JP7420234B2 JP7420234B2 JP2022518605A JP2022518605A JP7420234B2 JP 7420234 B2 JP7420234 B2 JP 7420234B2 JP 2022518605 A JP2022518605 A JP 2022518605A JP 2022518605 A JP2022518605 A JP 2022518605A JP 7420234 B2 JP7420234 B2 JP 7420234B2
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- 239000013078 crystal Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 19
- 238000003475 lamination Methods 0.000 claims description 15
- 230000010287 polarization Effects 0.000 claims description 8
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 251
- 238000012986 modification Methods 0.000 description 42
- 230000004048 modification Effects 0.000 description 42
- 239000002585 base Substances 0.000 description 39
- 239000000758 substrate Substances 0.000 description 37
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000005452 bending Methods 0.000 description 14
- 230000035882 stress Effects 0.000 description 14
- 239000012790 adhesive layer Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 230000008646 thermal stress Effects 0.000 description 9
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229910001120 nichrome Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0603—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a piezoelectric bender, e.g. bimorph
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
図1は、本発明の実施形態1に係る圧電デバイスの平面図である。図2は、図1の圧電デバイスをII-II線矢印方向から見た断面図である。図3は、図1のIII部を拡大して示す部分平面図である。
以下、本発明の実施形態2に係る圧電デバイスについて説明する。本発明の実施形態2に係る圧電デバイスは、第1連結部および第2連結部の各々の延出長さ、最小幅および厚さの寸法関係を規定した点が、本発明の実施形態1に係る圧電デバイス100と異なっている。このため、本発明の実施形態1に係る圧電デバイス100と同様の構成については説明を繰り返さない。
Claims (6)
- 環状の基部と、
前記基部に接続された固定端部と、該固定端部とは反対側に位置する先端部とを有し、前記固定端部から前記先端部に向かって延在する複数の梁部と、
前記複数の梁部のうち前記基部の周方向に互いに隣り合う一対の梁部を接続する接続部とを備え、
前記複数の梁部の各々は、複数の層を含む圧電振動部であり、
前記一対の梁部の間には、前記一対の梁部の互いに隣り合う一対の端縁の一部によって形成されるスリットと、該スリットに間隔をあけつつ前記一対の梁部の各々の前記先端部に隣接して位置し、前記一対の端縁の他の一部によって形成される開口部とが設けられており、
前記接続部は、前記一対の梁部の間を折返すように設けられており、
前記接続部は、前記スリットに沿って延在して前記一対の梁部の一方に接続された第1連結部と、前記スリットに沿って延在して前記一対の梁部の他方に接続された第2連結部と、前記スリットと前記開口部との間に位置して前記第1連結部および前記第2連結部の各々と接続された橋渡し部とを含み、
前記複数の梁部の各々は、互いに交差する方向に延在する前記スリットに挟まれて位置しつつ前記接続部を介して前記周方向に互いに接続されており、
前記スリットに間隔をあけて前記第1連結部および前記第2連結部の各々に沿って延在しつつ前記開口部と連通した外周スリットがさらに設けられている、圧電デバイス。 - 前記複数の層は、
単結晶圧電体で構成された圧電体層と、
前記複数の層の積層方向において前記圧電体層の一方側に配置された第1電極層と、
前記圧電体層を挟んで前記第1電極層の少なくとも一部と対向するように前記圧電体層の他方側に配置された第2電極層とを有し、
前記単結晶圧電体の分極軸を、前記積層方向に直交する仮想平面上に前記積層方向から投影したときの仮想軸の軸方向は、前記複数の梁部のいずれにおいても同一方向に延在しており、かつ、前記積層方向から見て、前記複数の梁部の各々の延在方向と交差している、請求項1に記載の圧電デバイス。 - 前記積層方向から見て、前記仮想軸の軸方向は、前記複数の梁部の各々の延在方向とのなす角が、40度以上50度以下、または、130度以上140度以下である、請求項2に記載の圧電デバイス。
- 前記圧電体層は、ニオブ酸リチウム(LiNbO3)、または、タンタル酸リチウム(LiTaO3)で構成されている、請求項2または請求項3に記載の圧電デバイス。
- 前記複数の梁部として、4つの梁部を備え、
前記4つの梁部の前記固定端部は、前記積層方向から見て、正方形状に位置しており、
前記積層方向から見て、前記4つの梁部の前記固定端部のうちの向かい合う固定端部同士の最短距離の寸法に対する、前記第1連結部および前記第2連結部の各々の延出長さの寸法の比率は、32%以下である、請求項2から請求項4のいずれか1項に記載の圧電デバイス。 - 前記第1連結部および前記第2連結部の各々の最小幅の寸法は、前記第1連結部および前記第2連結部の各々の前記積層方向における厚さの寸法より大きい、請求項2から請求項5のいずれか1項に記載の圧電デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020080440 | 2020-04-30 | ||
JP2020080440 | 2020-04-30 | ||
PCT/JP2021/002409 WO2021220566A1 (ja) | 2020-04-30 | 2021-01-25 | 圧電デバイス |
Publications (3)
Publication Number | Publication Date |
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JPWO2021220566A1 JPWO2021220566A1 (ja) | 2021-11-04 |
JPWO2021220566A5 JPWO2021220566A5 (ja) | 2022-12-28 |
JP7420234B2 true JP7420234B2 (ja) | 2024-01-23 |
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JP2022518605A Active JP7420234B2 (ja) | 2020-04-30 | 2021-01-25 | 圧電デバイス |
Country Status (5)
Country | Link |
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US (1) | US20230038607A1 (ja) |
JP (1) | JP7420234B2 (ja) |
CN (1) | CN115428175A (ja) |
DE (1) | DE112021001186T5 (ja) |
WO (1) | WO2021220566A1 (ja) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011004129A (ja) | 2009-06-18 | 2011-01-06 | Univ Of Tokyo | マイクロフォン |
US20120053393A1 (en) | 2010-02-26 | 2012-03-01 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Sound transducer for insertion in an ear |
JP2014515214A (ja) | 2011-03-31 | 2014-06-26 | バクル−コーリング,インコーポレイテッド | ギャップ制御構造を有する音響トランスデューサおよび音響トランスデューサの製造方法 |
JP2015108633A (ja) | 2010-04-30 | 2015-06-11 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 微細加工された圧電性x軸ジャイロスコープ |
JP2017022576A (ja) | 2015-07-10 | 2017-01-26 | ローム株式会社 | 圧電薄膜マイクロフォンの構造および製造方法 |
US20190110132A1 (en) | 2015-09-18 | 2019-04-11 | Vesper Technologies Inc. | Plate Spring |
US20200100033A1 (en) | 2017-05-26 | 2020-03-26 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Micromechanical sound transducer |
-
2021
- 2021-01-25 WO PCT/JP2021/002409 patent/WO2021220566A1/ja active Application Filing
- 2021-01-25 CN CN202180029560.8A patent/CN115428175A/zh active Pending
- 2021-01-25 JP JP2022518605A patent/JP7420234B2/ja active Active
- 2021-01-25 DE DE112021001186.3T patent/DE112021001186T5/de active Pending
-
2022
- 2022-10-18 US US17/967,931 patent/US20230038607A1/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011004129A (ja) | 2009-06-18 | 2011-01-06 | Univ Of Tokyo | マイクロフォン |
US20120053393A1 (en) | 2010-02-26 | 2012-03-01 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Sound transducer for insertion in an ear |
JP2015108633A (ja) | 2010-04-30 | 2015-06-11 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | 微細加工された圧電性x軸ジャイロスコープ |
JP2014515214A (ja) | 2011-03-31 | 2014-06-26 | バクル−コーリング,インコーポレイテッド | ギャップ制御構造を有する音響トランスデューサおよび音響トランスデューサの製造方法 |
JP2017022576A (ja) | 2015-07-10 | 2017-01-26 | ローム株式会社 | 圧電薄膜マイクロフォンの構造および製造方法 |
US20190110132A1 (en) | 2015-09-18 | 2019-04-11 | Vesper Technologies Inc. | Plate Spring |
US20200100033A1 (en) | 2017-05-26 | 2020-03-26 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Micromechanical sound transducer |
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Publication number | Publication date |
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DE112021001186T5 (de) | 2022-12-15 |
JPWO2021220566A1 (ja) | 2021-11-04 |
CN115428175A (zh) | 2022-12-02 |
US20230038607A1 (en) | 2023-02-09 |
WO2021220566A1 (ja) | 2021-11-04 |
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