JP7384171B2 - Film adhesive for semiconductors, semiconductor devices and manufacturing methods thereof - Google Patents

Description

The present invention relates to a film adhesive for semiconductors, a semiconductor device, and a method for manufacturing the same.

Conventionally, wire bonding methods using thin metal wires such as gold wires have been widely used to connect semiconductor chips and substrates. On the other hand, in order to meet the demands for higher functionality, higher integration, higher speed, etc. for semiconductor devices, flip chips that directly connect the semiconductor chip and substrate by forming conductive protrusions called bumps on the semiconductor chip or substrate The connection method (FC connection method) is becoming widespread.

For example, regarding the connection between a semiconductor chip and a substrate, the COB (Chip On Board) type connection method, which is widely used in BGA (Ball Grid Array), CSP (Chip Size Package), etc., also corresponds to the FC connection method. The FC connection method is also widely used as a COC (Chip On Chip) type connection method in which connection portions (for example, bumps and wiring) are formed on semiconductor chips to connect semiconductor chips.

In addition, for packages that are strongly required to be smaller, thinner, and more functional, there are chip stack type packages, POP (Package On Package), and TSV (Through -Silicon Via) etc. are also beginning to become widespread. Since such stacking/multi-stage technology arranges semiconductor chips and the like three-dimensionally, the package can be made smaller compared to a two-dimensional arrangement method. Furthermore, it is attracting attention as a next-generation semiconductor wiring technology because it is effective in improving semiconductor performance, reducing noise, reducing mounting area, and saving power.

By the way, the main metals used for the above-mentioned connections (bumps or wiring) include solder, tin, gold, silver, copper, nickel, etc., and conductive materials containing multiple types of these are also used. . On the connection surface of the connection part, the surface of the metal used for the connection part may be oxidized to form an oxide film, and impurities such as oxides may adhere. If such oxide films and impurities remain, there is concern that the connectivity and insulation reliability between the semiconductor chip and the substrate or between two semiconductor chips will deteriorate, and the benefits of adopting the above-mentioned connection method will be lost. Ru.

As a method of suppressing the generation of these oxide films and impurities, there is a method of coating the connection portion with an oxidation-preventing film, which is known as OSP (Organic Solderability Preservatives) treatment or the like. However, this anti-oxidation film may cause a decrease in solder wettability, a decrease in connectivity, etc. during the connection process.

Therefore, as a method for removing the above-mentioned oxide film and impurities, a method using an adhesive film containing a fluxing agent has been proposed (see, for example, Patent Document 1).

International Publication 2013/125086

By the way, when manufacturing a semiconductor device by mounting a semiconductor chip on a semiconductor chip mounting substrate (for example, a semiconductor chip, a semiconductor wafer, a printed circuit board, etc.) using a film-like adhesive for semiconductors, curing shrinkage of the adhesive, Due to the influence of thermal history during the reflow process, stress is applied to the substrate and the semiconductor chip, which may cause warping. Since the occurrence of warpage leads to cracking of the substrate and the semiconductor chip, insufficient fixation of the substrate during the sealing process, etc., it is required to reduce the amount of warpage.

On the other hand, the present inventors added a thermoplastic resin with a Tg of less than 35°C to a film adhesive for semiconductors made of a thermosetting adhesive to reduce the elastic modulus after curing, thereby reducing the amount of warpage. We found that it is possible to reduce the

However, when a thermoplastic resin with a Tg of less than 35°C is used, when picking up a semiconductor chip in the mounting process, the semiconductor film adhesive may remain on the pick-up tool and contaminate the pick-up tool. One thing became clear. Contamination of the pick-up tool leads to reduced production efficiency due to process stoppages for cleaning the pick-up tool, and quality abnormalities due to contamination spreading from the pick-up tool to the bonding tool. Therefore, while reducing contamination of the pick-up tool, the above It is required to reduce the warpage.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a film adhesive for semiconductors that can suppress the occurrence of warping of the substrate and semiconductor chips and contamination of the pickup tool during the mounting process. Another object of the present invention is to provide a semiconductor device using the above film adhesive for semiconductors and a method for manufacturing the same.

A film adhesive for semiconductors according to one aspect of the present invention includes a first thermosetting adhesive layer and a second thermosetting adhesive layer provided on the first thermosetting adhesive layer. The first thermosetting adhesive layer contains a first thermoplastic resin having a Tg of less than 35°C, and the second thermosetting adhesive layer contains a second thermosetting resin having a Tg of 35°C or more. Contains thermoplastic resin. According to this film adhesive for semiconductors, by using the second thermosetting adhesive layer in contact with the pickup tool, contamination of the pickup tool can be suppressed, and the first thermosetting adhesive layer Since the adhesive layer contains a thermoplastic resin (first thermoplastic resin) having a Tg of less than 35° C., warping of the substrate and the semiconductor chip can be reduced.

The film adhesive for semiconductors described above is particularly suitable for use in manufacturing flip chip packages (semiconductor devices) using wafer level packaging technology. Wafer level packaging technology is a technology for efficiently manufacturing a plurality of packages by mounting a plurality of semiconductor chips on a semiconductor wafer, sealing them all together, and separating them into individual pieces by dicing. Wafer level packaging technology is useful as a technology for improving productivity because it can shorten the assembly time of flip chip packages. However, in wafer level packaging technology, as the number of semiconductor chips mounted increases, stress on the semiconductor wafer tends to increase, and the amount of warpage tends to increase. On the other hand, when using the film adhesive for semiconductors, even when semiconductor devices are manufactured using wafer level packaging technology, it is possible to suppress the occurrence of warping of semiconductor wafers and contamination of pickup tools.

The film adhesive for semiconductors preferably has an elastic modulus of 5 MPa or less at 35° C. after curing. In this case, the amount of warpage can be further reduced.

The Tg of the second thermoplastic resin is preferably 60°C or higher. In this case, contamination of the pickup tool can be further reduced.

Preferably, the second thermoplastic resin contains a phenoxy resin. In this case, contamination of the pickup tool can be further reduced, and the amount of warpage can be further reduced.

At least one of the first thermosetting adhesive layer and the second thermosetting adhesive layer preferably contains a flux compound. In this case, the oxide film on the metal surface is sufficiently reduced and removed so that the metal can be easily melted, the molten metal does not get wet and spread, and a metal joint is formed. flux activity) is obtained. Therefore, excellent connectivity can be obtained.

The flux compound preferably has a carboxyl group, more preferably two or more carboxyl groups. In this case, even better connection reliability (for example, connectivity and insulation reliability) is likely to be obtained.

［式（２）中、Ｒ^１及びＲ^２は、それぞれ独立して、水素原子又は電子供与性基を示し、ｎは０又は１以上の整数を示す。］The flux compound is preferably a compound represented by the following formula (2). In this case, even better connection reliability is likely to be obtained.

[In formula (2), R ¹ and R ² each independently represent a hydrogen atom or an electron-donating group, and n represents an integer of 0 or 1 or more. ]

The melting point of the flux compound is preferably 150°C or lower. In this case, since the flux melts before the adhesive hardens during thermocompression bonding, and the oxide film of the solder etc. is reduced and removed, even better connection reliability is likely to be obtained.

It is preferable that the first thermoplastic resin contains a (meth)acrylic resin or a urethane resin. In this case, the amount of warpage can be further reduced.

At least one of the first thermosetting adhesive layer and the second thermosetting adhesive layer preferably contains a thermosetting resin and a curing agent, and preferably contains an epoxy resin and an imidazole-based curing agent. It is more preferable to contain.

A film adhesive for semiconductors according to another aspect of the present invention includes a first thermosetting adhesive layer and a second thermosetting adhesive layer provided on the first thermosetting adhesive layer. The elastic modulus at 35°C after curing is 5 MPa or less, and the probe tack value of the second thermosetting adhesive layer at a probe temperature of 50°C and a stage temperature of 25°C is 60 N/cm ² or less. It is. According to this film adhesive for semiconductors, the probe tack value of the second thermosetting adhesive layer is 60 N/cm ² or less, so that the second thermosetting adhesive layer comes into contact with the pickup tool. By using this method, contamination of the pickup tool can be suppressed. Further, since the elastic modulus at 35° C. after curing is 5 MPa or less, warping of the base body and semiconductor chip can be reduced.

A method for manufacturing a semiconductor device according to another aspect of the present invention includes: a semiconductor wafer having a connection portion on one main surface; and the above-described semiconductor film adhesive provided on the main surface of the semiconductor wafer. A step of preparing a laminate in which a semiconductor wafer, a first thermosetting adhesive layer, and a second thermosetting adhesive layer are laminated in this order; and separating the laminate individually. A step of picking up the semiconductor chip with film adhesive from the film adhesive side, and a step of picking up the semiconductor chip with film adhesive from one side. Connecting the semiconductor chip with the film adhesive by placing the film adhesive side on the main surface of the semiconductor chip mounting substrate having the connection part on the main surface and heating it. and a step of electrically connecting the connecting portion of the semiconductor chip mounting base to the connecting portion of the semiconductor chip mounting base. According to this manufacturing method, it is possible to suppress the occurrence of warping of the substrate and the semiconductor chip and the contamination of the pickup tool.

A semiconductor device according to another aspect of the present invention is a semiconductor device in which connection portions of a semiconductor chip and a semiconductor chip mounting base are electrically connected to each other, and at least a part of the connection portion is a semiconductor device as described above. It is sealed with a cured film adhesive. This semiconductor device has a reduced amount of warpage.

According to the present invention, it is possible to provide a film adhesive for semiconductors that can suppress the occurrence of warping of a substrate and a semiconductor chip during a mounting process and contamination of a pickup tool. Further, according to the present invention, it is possible to provide a semiconductor device using the above film adhesive for semiconductors and a method for manufacturing the same.

FIG. 1 is a schematic cross-sectional view showing one embodiment of the film adhesive for semiconductors of the present invention. FIG. 2 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 3 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 4 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 5 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 6 is a process cross-sectional view schematically showing an embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 7 is a schematic cross-sectional view showing an embodiment of the semiconductor device of the present invention. FIG. 8 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention.

Embodiments of the present invention will be described in detail below, with reference to the drawings as the case may be. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant explanations will be omitted. In addition, the positional relationships such as top, bottom, left, and right are based on the positional relationships shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the illustrated ratios.

<Film adhesive for semiconductors>
FIG. 1 is a schematic cross-sectional view showing a film adhesive for semiconductors according to one embodiment. A film-like adhesive for semiconductors 1 according to an embodiment includes a first thermosetting adhesive layer 2 (hereinafter also simply referred to as "first layer") and a second thermosetting adhesive layer provided on the first layer 2. The thermosetting adhesive layer 3 (hereinafter also simply referred to as "second layer") is provided. The first layer 2 is a layer made of a first thermosetting adhesive (hereinafter also simply referred to as "first adhesive"), and the second layer 3 is a layer made of a second thermosetting adhesive. (hereinafter also simply referred to as "second adhesive").

The semiconductor film adhesive 1 can be used, for example, in a semiconductor device in which the connection parts of a semiconductor chip and a semiconductor chip mounting substrate (for example, a semiconductor chip, a semiconductor wafer, a printed circuit board, etc.) are electrically connected to each other. It is used to seal at least a portion of the connection portion. Specifically, it can be used to manufacture a semiconductor device by the method described below.

(First embodiment)
In the first embodiment, the first layer 2 contains a first thermoplastic resin having a Tg of less than 35° C. (hereinafter also simply referred to as "first thermoplastic resin"), and the second layer 3 contains a second thermoplastic resin having a Tg of 35°C or higher (hereinafter also simply referred to as "second thermoplastic resin"). That is, the first adhesive contains the first thermoplastic resin, and the second adhesive contains the second thermoplastic resin. According to such a film adhesive 1 for semiconductors, contamination of the pick-up tool can be suppressed by using the second layer 3 in contact with the pick-up tool, and the first layer 2 Since it contains a thermoplastic resin (first thermoplastic resin) having a Tg of less than 35° C., warping of the semiconductor chip mounting substrate and the semiconductor chip can be reduced.

The first adhesive is, for example, a composition containing a thermosetting resin and a curing agent as thermosetting components, and a first thermoplastic resin. As the thermosetting component, a radically polymerizable compound and a thermal polymerization initiator may be used.

Examples of thermosetting resins include epoxy resins, phenol resins (excluding cases where they are contained as curing agents), polyimide resins, bismaleimide resins, and the like. Among these, it is preferable that the thermosetting resin is an epoxy resin from the viewpoint of easily obtaining better heat resistance and adhesiveness.

As the epoxy resin, any resin having two or more epoxy groups in its molecule can be used without particular limitation. Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, naphthalene epoxy resin, phenol novolac epoxy resin, cresol novolak epoxy resin, phenol aralkyl epoxy resin, biphenyl epoxy resin, and triphenylmethane. Type epoxy resins, dicyclopentadiene type epoxy resins, and various polyfunctional epoxy resins can be used. These can be used alone or in a mixture of two or more.

From the viewpoint of suppressing decomposition and generation of volatile components during connection at high temperatures, it is preferable to use an epoxy resin having a thermal weight loss rate of 5% or less at the connection temperature. For example, if the temperature at the time of connection is 250°C, it is preferable to use an epoxy resin whose thermal weight loss rate at 250°C is 5% or less, and if the temperature at the time of connection is 300°C, it is preferable to use an epoxy resin whose thermal weight loss rate at 250°C is 300°C. It is preferable to use an epoxy resin with a reduction rate of 5% or less.

The content of the thermosetting resin is, for example, 5% by mass or more, preferably 10% by mass or more, and more preferably 15% by mass or more, based on the total mass of the first adhesive. The content of the thermosetting resin is, for example, 75% by mass or less, preferably 50% by mass or less, and more preferably 45% by mass or less, based on the total mass of the first adhesive. The content of the thermosetting resin may be, for example, 5 to 75% by weight, 10 to 50% by weight, or 15 to 45% by weight, based on the total weight of the first adhesive. When the thermosetting resin contains an epoxy resin, the content of the epoxy resin is preferably within the above range. Note that when the first adhesive contains an organic solvent, the "total mass of the first adhesive" in this specification does not include the mass of the organic solvent.

The curing agent can be appropriately selected depending on the thermosetting resin used. For example, when using an epoxy resin as the thermosetting resin, the curing agent may be a phenol resin curing agent, an acid anhydride curing agent, an amine curing agent, an imidazole curing agent, a phosphine curing agent, etc. can. Since the phenolic resin curing agent and the acid anhydride curing agent exhibit flux activity, connection reliability can be further improved by using these curing agents as the curing agent. Each curing agent will be explained below.

(i) Phenolic resin curing agent There is no particular restriction on the phenolic resin curing agent as long as it has two or more phenolic hydroxyl groups in the molecule, such as phenol novolak resin, cresol novolac resin, phenol aralkyl resin. , cresol naphthol formaldehyde polycondensate, triphenylmethane type polyfunctional phenol resin, and various polyfunctional phenol resins can be used. These can be used alone or in a mixture of two or more.

The equivalent ratio of the phenolic resin curing agent to the epoxy resin (number of moles of phenolic hydroxyl groups in the phenolic resin curing agent/number of moles of epoxy groups in the epoxy resin) is important for good curability, adhesion, and storage stability. From this point of view, it is preferably 0.3 to 1.5, more preferably 0.4 to 1.0, and even more preferably 0.5 to 1.0. When the equivalence ratio is 0.3 or more, curability tends to improve and adhesive strength improves, and when it is 1.5 or less, unreacted phenolic hydroxyl groups do not remain excessively, and the water absorption rate decreases. It tends to be kept low and insulation reliability is improved.

(ii) Acid anhydride curing agent Examples of the acid anhydride curing agent include methylcyclohexanetetracarboxylic dianhydride, trimellitic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic dianhydride, and ethylene glycol dianhydride. Anhydrotrimellitate can be used. These can be used alone or in a mixture of two or more.

The equivalent ratio of the acid anhydride curing agent to the epoxy resin (number of moles of acid anhydride groups in the acid anhydride curing agent/number of moles of epoxy groups in the epoxy resin) is important for good curability, adhesion, and storage. From the viewpoint of stability, it is preferably from 0.3 to 1.5, more preferably from 0.4 to 1.0, even more preferably from 0.5 to 1.0. When the equivalence ratio is 0.3 or more, curability tends to improve and adhesive strength improves, and when it is 1.5 or less, unreacted acid anhydride does not remain excessively, and the water absorption rate decreases. It tends to be kept low and insulation reliability is improved.

(iii) Amine curing agent As the amine curing agent, for example, dicyandiamide can be used.

The equivalent ratio of the amine curing agent to the epoxy resin (number of moles of active hydrogen groups in the amine curing agent/number of moles of epoxy groups in the epoxy resin) is determined from the viewpoint of good curability, adhesion, and storage stability. It is preferably from 0.3 to 1.5, more preferably from 0.4 to 1.0, even more preferably from 0.5 to 1.0. When the equivalence ratio is 0.3 or more, curability tends to improve and adhesive strength improves, and when it is 1.5 or less, unreacted amine does not remain excessively, improving insulation reliability. There is a tendency to

(iv) Imidazole curing agent Examples of the imidazole curing agent include 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1- Cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6 -[2'-Methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2, 4-Diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')] -Ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, and epoxy resin and adducts of imidazoles. Among these, 1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole trimeri Tate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine Isocyanuric acid adducts, 2-phenylimidazole isocyanuric acid adducts, 2-phenyl-4,5-dihydroxymethylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole are preferred. These can be used alone or in combination of two or more. Alternatively, these may be used as latent curing agents that are microencapsulated.

The content of the imidazole curing agent is preferably 0.1 to 20 parts by weight, more preferably 0.1 to 10 parts by weight, based on 100 parts by weight of the epoxy resin. When the content of the imidazole curing agent is 0.1 part by mass or more, curability tends to improve. Further, when the content of the imidazole curing agent is 20 parts by mass or less, fluidity of the first adhesive during pressure bonding can be ensured, and the first adhesive between the connecting parts can be sufficiently eliminated. be able to. As a result, since the first adhesive is prevented from curing while intervening between the solder and the connection portion, connection failures are less likely to occur.

(v) Phosphine curing agent Examples of the phosphine curing agent include triphenylphosphine, tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium tetra(4-methylphenyl)borate, and tetraphenylphosphonium(4-fluorophenyl)borate. mentioned.

The content of the phosphine curing agent is preferably 0.1 to 10 parts by weight, more preferably 0.1 to 5 parts by weight, based on 100 parts by weight of the epoxy resin. When the content of the phosphine curing agent is 0.1 parts by mass or more, the curability tends to improve, and when the content is 10 parts by mass or less, the first adhesive may harden before the metal bond is formed. There are no connections, and connection failures are less likely to occur.

The phenolic resin curing agent, the acid anhydride curing agent, and the amine curing agent can each be used singly or as a mixture of two or more. The imidazole curing agent and the phosphine curing agent may be used alone, or may be used together with a phenol resin curing agent, an acid anhydride curing agent, or an amine curing agent.

The first thermoplastic resin has a function of reducing the elastic modulus of the semiconductor film adhesive after curing, and contributes to reducing the amount of warpage. The Tg (glass transition temperature) of the first thermoplastic resin is less than 35°C, and from the viewpoint of further reducing the amount of warpage, it is preferably 25°C or less, more preferably 10°C or less, and even more preferably 0°C. below ℃. The Tg of the first thermoplastic resin is preferably -70°C or higher, more preferably -50°C or higher, and even more preferably -30°C from the viewpoint of preventing the tack value of the first layer from becoming too high. That's all. From these viewpoints, the Tg of the first thermoplastic resin may be, for example, -70°C or more and less than 35°C, -50 to 25°C, -30 to 10°C, or -30 to 0°C. The first adhesive may include a plurality of thermoplastic resins having different Tg from each other as the first thermoplastic resin. In this case, it is preferable that the Tg of the first thermoplastic resin mainly included is within the above range, and it is more preferable that the Tg of all the first thermoplastic resins is within the above range. Note that in this specification, Tg is a value obtained by, for example, DMA measurement.

Examples of the first thermoplastic resin include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, (meth)acrylic resin, polyester resin, polyethylene resin, polyether sulfone resin, polyetherimide resin, Examples include polyvinyl acetal resin and urethane resin. Among these, the first thermoplastic resin is selected from (meth)acrylic resin, urethane resin, polyamideimide resin, and polyimide resin from the viewpoint of excellent heat resistance and film-forming property, and from the viewpoint of excellent elastic modulus reduction effect. The resin preferably contains at least one selected from the group consisting of (meth)acrylic resin and urethane resin, and more preferably contains at least one selected from the group consisting of (meth)acrylic resin and urethane resin. The (meth)acrylic resin is preferably acrylic rubber from the viewpoint of excellent heat resistance and film-forming properties, and from the viewpoint of excellent elastic modulus reduction effect. That is, it is particularly preferable that the first thermoplastic resin contains at least one selected from the group consisting of acrylic rubber and urethane resin. Here, the (meth)acrylic resin is a polymer compound obtained by polymerizing either or both of acrylic esters and methacrylic esters as raw materials. These thermoplastic resins can be used alone or as a mixture or copolymer of two or more.

The weight average molecular weight of the first thermoplastic resin is, for example, 10,000 or more, preferably 20,000 or more, and more preferably 30,000 or more. According to such a thermoplastic resin, the heat resistance and film forming properties of the first adhesive can be improved. The weight average molecular weight of the first thermoplastic resin is preferably 1,000,000 or less, more preferably 500,000 or less. From these viewpoints, the weight average molecular weight of the first thermoplastic resin may be, for example, 10,000 to 1,000,000, 20,000 to 500,000, or 30,000 to 500,000. According to such a thermoplastic resin, the heat resistance of the first adhesive can be improved.

In this specification, the weight average molecular weight means the weight average molecular weight measured in terms of polystyrene using high performance liquid chromatography (manufactured by Shimadzu Corporation, trade name: C-R4A). For example, the following conditions can be used for the measurement.
Detector: LV4000 UV Detector (manufactured by Hitachi, Ltd., product name)
Pump: L6000 Pump (manufactured by Hitachi, Ltd., product name)
Column: Gelpack GL-S300MDT-5 (total 2 columns) (manufactured by Hitachi Chemical Co., Ltd., product name)
Eluent: THF/DMF=1/1 (volume ratio) + LiBr (0.03 mol/L) + H3PO4 (0.06 mol/L)
Flow rate: 1mL/min

The content of the first thermoplastic resin is, for example, 1% by mass or more, preferably 2% by mass or more, and more preferably 5% by mass or more, based on the total mass of the first adhesive. The content of the first thermoplastic resin is, for example, 30% by mass or less, preferably 20% by mass or less, and more preferably 15% by mass or less, based on the total mass of the first adhesive. The content of the first thermoplastic resin may be, for example, 1 to 30% by weight, 2 to 20% by weight, or 5 to 15% by weight, based on the total weight of the first adhesive.

The ratio (mass ratio) of the content of the thermosetting resin to the content of the first thermoplastic resin in the first adhesive is preferably 0.01 to 5, and preferably 0.05 to 3. More preferably, it is 0.1 to 2. By setting the above ratio to 0.01 or more, better curability and adhesive strength can be obtained, and by setting the above ratio to 5 or less, the elastic modulus can be further reduced and better film forming properties can be obtained. can get.

The first adhesive may further contain a flux compound, if necessary. A flux compound is a compound that has flux activity and functions as a flux agent. As the flux compound, any known flux compound can be used without particular limitation as long as it reduces and removes the oxide film on the surface of the solder or the like and facilitates metal bonding. As the flux compound, one type may be used alone, or two or more types may be used in combination. However, the flux compound does not contain the above-mentioned curing agent.

The flux compound preferably has a carboxyl group, and more preferably has two or more carboxyl groups, from the viewpoint of obtaining sufficient flux activity and better connection reliability. Among these, compounds having two carboxyl groups are preferred. A compound having two carboxyl groups is less likely to volatilize even at high temperatures during connection than a compound having one carboxyl group (monocarboxylic acid), and can further suppress the generation of voids. Additionally, when a compound with two carboxyl groups is used, the increase in viscosity of semiconductor film adhesives during storage and connection work is further suppressed compared to when a compound with three or more carboxyl groups is used. Therefore, the connection reliability of the semiconductor device can be further improved.

As the flux compound having a carboxyl group, a compound having a group represented by the following formula (1) is preferably used.

In formula (1), R ¹ represents a hydrogen atom or an electron donating group.

Examples of flux compounds include dicarboxylic acids selected from succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, undecanedioic acid and dodecanedioic acid, and dicarboxylic acids selected from these dicarboxylic acids. A compound substituted with an electron-donating group at the position can be used.

The melting point of the flux compound is preferably 150°C or lower, more preferably 140°C or lower, and even more preferably 130°C or lower. Such a flux compound tends to sufficiently exhibit flux activity before the curing reaction between the epoxy resin and the curing agent occurs. Therefore, by using a film adhesive for semiconductors using the first adhesive containing such a flux compound, it is possible to realize a semiconductor device with even better connection reliability. Further, the melting point of the flux compound is preferably 25°C or higher, more preferably 50°C or higher. The melting point of the flux compound may be, for example, 25-150°C, 50-140°C or 50-130°C. Moreover, it is preferable that the flux compound is solid at room temperature (25° C.).

The melting point of the flux compound can be measured using a general melting point measuring device. The sample whose melting point is to be measured is required to be pulverized into a fine powder and to use a very small amount to reduce the temperature deviation within the sample. A capillary tube with one end closed is often used as a sample container, but depending on the measuring device, the sample container may be sandwiched between two microscope cover glasses. Also, if the temperature is raised rapidly, a temperature gradient will occur between the sample and the thermometer, causing measurement errors, so heating at the time of measuring the melting point should be done at a rate of increase of 1°C or less per minute. desirable.

As mentioned above, since the sample whose melting point is to be measured is prepared as a fine powder, the sample before melting is opaque due to diffuse reflection on the surface. Usually, the lower limit of the melting point is the temperature at which the sample begins to become transparent, and the upper limit is the temperature at which the sample completely melts. There are various types of measuring devices, but the most classic device is a double-tube thermometer attached to a capillary tube filled with a sample and heated in a hot bath. In order to attach a capillary tube to a double-tube thermometer, a highly viscous liquid is used as the hot bath liquid, and concentrated sulfuric acid or silicone oil is often used, so that the sample comes close to the reservoir at the tip of the thermometer. Attach. Further, as a melting point measuring device, one that automatically determines the melting point by heating the material using a metal heat block and adjusting the heating while measuring the light transmittance can also be used.

In addition, in this specification, a melting point of 150°C or lower means that the upper limit of the melting point is 150°C or lower, and a melting point of 25°C or higher means that the lower limit of the melting point is 25°C or higher. means.

The content of the flux compound is preferably 0.5% by mass or more based on the total mass of the first adhesive. The content of the flux compound is preferably 10% by mass or less, more preferably 5% by mass or less, based on the total mass of the first adhesive. The content of the flux compound may be, for example, from 0.5 to 10% by weight or from 0.5 to 5% by weight, based on the total weight of the first adhesive.

The first adhesive may further contain a filler, if necessary. Fillers are suitably used to control the viscosity of the adhesive, the physical properties of the cured adhesive, and the like. Specifically, by including the filler, it is possible to suppress the generation of voids during connection, reduce the moisture absorption rate of the cured adhesive, and the like, for example.

Examples of fillers include inorganic fillers (inorganic particles) and organic fillers (organic particles). Examples of inorganic fillers include insulating inorganic fillers such as glass, silica, alumina, titanium oxide, mica, and boron nitride, among which at least one filler selected from the group consisting of silica, alumina, titanium oxide, and boron nitride is used. Preferably, at least one selected from the group consisting of silica, alumina, and boron nitride is more preferable. The insulating inorganic filler may be a whisker. Examples of whiskers include aluminum borate, aluminum titanate, zinc oxide, calcium silicate, and boron nitride. Examples of the organic filler include resin fillers (resin particles). Examples of resin fillers include polyurethane and polyimide. Compared to inorganic fillers, resin fillers can impart flexibility at high temperatures such as 260°C, making them suitable for improving reflow resistance. effective.

From the viewpoint of further improving insulation reliability, the filler is preferably insulating (insulating filler). The first adhesive preferably does not contain conductive metal fillers (metal particles) such as silver filler and solder filler, and conductive inorganic fillers such as carbon black.

The content of the insulating filler is determined from the viewpoints of making it easy to adjust the elastic modulus to a desired range, suppressing warpage, more sufficiently reducing the generation of voids, and achieving excellent connection reliability. From the viewpoint that the filler is used as a reference, the content may be 50% by mass or more, 70% by mass or more, or 90% by mass or more based on the total mass of the filler. The filler may consist essentially only of insulating filler. That is, the filler does not need to contain substantially no conductive filler. "Substantially not containing" means that the content of the conductive filler in the filler is less than 0.5% by mass based on the total mass of the filler.

The physical properties of the filler may be adjusted as appropriate by surface treatment. The filler is preferably a surface-treated filler from the viewpoint of improving dispersibility or adhesive strength. Examples of the surface treatment agent include glycidyl-based (epoxy-based), amine-based, phenyl-based, phenylamino-based, (meth)acrylic-based, and vinyl-based compounds.

As the surface treatment, silane treatment using a silane compound such as an epoxysilane type, an aminosilane type, an acrylic silane type, etc. is preferred from the viewpoint of ease of surface treatment. The surface treatment agent is preferably at least one selected from the group consisting of glycidyl compounds, phenylamino compounds, and (meth)acrylic compounds from the viewpoint of excellent dispersibility, fluidity, and adhesive strength. . From the viewpoint of excellent storage stability, the surface treatment agent is preferably at least one selected from the group consisting of phenyl compounds and (meth)acrylic compounds.

The average particle size of the filler is preferably 1.5 μm or less from the viewpoint of preventing jamming during flip-chip connection, and more preferably 1.0 μm or less from the viewpoint of excellent visibility (transparency).

The content of the filler is determined based on the total mass of the first adhesive, from the viewpoint of suppressing the heat dissipation from becoming low and from the viewpoint of tending to suppress the generation of voids and the increase in the moisture absorption rate. As a standard, it is preferably 30% by mass or more, more preferably 40% by mass or more. The content of the filler increases the viscosity and reduces the fluidity of the first adhesive, and tends to prevent the filler from getting caught in the connection part (trapping), resulting in a decrease in connection reliability. From the viewpoint of tending to easily suppress the above-mentioned effects, the amount is preferably 90% by mass or less, and more preferably 80% by mass or less, based on the total mass of the first adhesive. From these viewpoints, the filler content is preferably 30 to 90% by mass, more preferably 40 to 80% by mass, based on the total mass of the first adhesive.

The first adhesive may further contain additives such as an antioxidant, a silane coupling agent, a titanium coupling agent, a leveling agent, and an ion trapping agent, if necessary. These can be used alone or in combination of two or more. The amounts of these additives may be adjusted as appropriate so that the effects of each additive are exhibited.

The first adhesive may contain a thermoplastic resin having a Tg of 35°C or higher (hereinafter referred to as "high Tg thermoplastic resin"), but a thermoplastic resin having a Tg of less than 35°C (hereinafter referred to as "high Tg thermoplastic resin"). (also referred to as "low Tg thermoplastic resin") (for example, containing more than 50% by mass based on the total mass of the thermoplastic resin contained in the first adhesive), and It is more preferable that the resin does not contain a plastic resin. The content of the low Tg thermoplastic resin (first thermoplastic resin) in the first adhesive is 75% by mass or more, 85% by mass based on the total mass of the thermoplastic resin contained in the first adhesive. % or more or 95% by mass or more. The content of the high Tg thermoplastic resin in the first adhesive is, for example, 5% by mass or less, preferably 1% by mass or less, and more preferably 0% by mass, based on the total mass of the first adhesive. It is.

The second adhesive contains, for example, a thermosetting resin and a curing agent as thermosetting components, and a second thermoplastic resin. As the thermosetting component, a radically polymerizable compound and a thermal polymerization initiator may be used. The second adhesive may further contain a flux compound, filler, and other additives, if necessary. As the thermosetting component, flux compound, filler, and other additives in the second adhesive, the components described above as components contained in the first adhesive can be used, and the type and content of each component can be used. The same is true for preferred examples.

The second thermoplastic resin contributes to reducing tack on the surface of the second layer. The Tg of the second thermoplastic resin is 35°C or higher. That is, the second thermoplastic resin is a high Tg thermoplastic resin.

The Tg of the second thermoplastic resin is preferably 50°C or higher, more preferably 60°C or higher, from the viewpoint of further reducing the tack of the second layer and further suppressing contamination of the pickup tool. be. The Tg of the second thermoplastic resin is preferably 250°C or less, more preferably 200°C or less, and even more preferably 160°C or less, from the viewpoint of further reducing the amount of warpage. From these viewpoints, the Tg of the second thermoplastic resin may be, for example, 35 to 250°C, 50 to 200°C, or 60 to 160°C. The second adhesive may include a plurality of thermoplastic resins having different Tg from each other as the second thermoplastic resin. In this case, it is preferable that the Tg of the second thermoplastic resin mainly included is within the above range, and it is more preferable that the Tg of all the second thermoplastic resins is within the above range.

Examples of the second thermoplastic resin include phenoxy resin, polyimide resin, polyamide resin, polycarbodiimide resin, cyanate ester resin, (meth)acrylic resin, polyester resin, polyethylene resin, polyether sulfone resin, polyetherimide resin, Examples include polyvinyl acetal resin and urethane resin. Among these, the second thermoplastic resin preferably contains at least one selected from the group consisting of phenoxy resin, (meth)acrylic resin, and polyimide resin, from the viewpoint of excellent heat resistance and film forming properties. More preferably, it contains a resin. These thermoplastic resins can be used alone or as a mixture or copolymer of two or more.

The weight average molecular weight of the second thermoplastic resin is, for example, 10,000 or more, preferably 20,000 or more, and more preferably 30,000 or more. According to such a thermoplastic resin, the heat resistance and film formability of the second adhesive can be improved. The weight average molecular weight of the second thermoplastic resin is preferably 1,000,000 or less, more preferably 500,000 or less. According to such a thermoplastic resin, the heat resistance of the second adhesive can be improved. From these viewpoints, the weight average molecular weight of the second thermoplastic resin may be, for example, 10,000 to 1,000,000, 20,000 to 500,000, or 30,000 to 500,000.

The content of the second thermoplastic resin is, for example, 4% by mass or more, preferably 7% by mass or more, and more preferably 10% by mass or more, based on the total mass of the second adhesive. The content of the second thermoplastic resin is, for example, 40% by mass or less, preferably 30% by mass or less, and more preferably 20% by mass or less, based on the total mass of the second adhesive. The content of the second thermoplastic resin may be, for example, 4 to 40% by weight, 7 to 30% by weight, or 10 to 20% by weight, based on the total weight of the second adhesive. Note that when the second adhesive contains an organic solvent, the "total mass of the second adhesive" in this specification does not include the mass of the organic solvent.

In this embodiment, the content of the thermoplastic resin with a Tg of 50°C or higher is preferably within the above range based on the total mass of the second adhesive, and the content of the thermoplastic resin with a Tg of 60°C or higher is preferably within the above range. , is more preferably within the above range based on the total mass of the second adhesive. Similarly, it is more preferable that the content of the thermoplastic resin with a Tg of 250°C or less is within the above range based on the total mass of the second adhesive, and the content of the thermoplastic resin with a Tg of 200°C or less is It is more preferable that the content of the thermoplastic resin having a Tg of 160°C or less is within the above range based on the total mass of the second adhesive. preferable.

The ratio (mass ratio) of the content of the thermosetting resin to the content of the second thermoplastic resin in the second adhesive is preferably 0.01 to 5, and preferably 0.05 to 3. More preferably, it is 0.1 to 2. By setting the above ratio to 0.01 or more, better curability and adhesive strength can be obtained, and by setting the above ratio to 5 or less, the elastic modulus can be further reduced and better film forming properties can be obtained. can get.

The second adhesive preferably mainly contains a high Tg thermoplastic resin (for example, contains more than 50% by mass based on the total mass of the thermoplastic resin contained in the second adhesive), and has a low Tg. Preferably, it does not contain Tg thermoplastic resin. The content of the high Tg thermoplastic resin (second thermoplastic resin) in the second adhesive is 75% by mass or more, 85% by mass based on the total mass of the thermoplastic resin contained in the second adhesive. % or more or 95% by mass or more. The content of the low Tg thermoplastic resin in the second adhesive is, for example, 5% by mass or less, preferably 1% by mass or less, and more preferably 0% by mass, based on the total mass of the second adhesive. It is.

In this embodiment, it is preferable that at least one of the first layer 2 and the second layer 3 contains a flux compound. That is, it is preferable that at least one of the first adhesive and the second adhesive contains a flux compound. In this case, the thickness of the layer containing the flux compound may be adjusted as appropriate so that the flux compound functions. For example, when the first layer 2 contains a flux compound, the thickness of the first layer 2 may be adjusted to be equal to or greater than the height of the connection portion of the semiconductor chip. When the semiconductor film adhesive 1 is used so that the second layer 3 comes into contact with the pickup tool, if the thickness of the first layer 2 is equal to or greater than the height of the semiconductor chip, the connection surface of the connection part ( At least a part (for example, a part containing solder) of the surface connected to the connection part of the semiconductor chip mounting base comes into contact with the first adhesive constituting the first layer, and impurities on the contact surface is removed, improving connection reliability.

Regarding the thickness of the film adhesive for semiconductors, if the sum of the heights of the above connection parts is x and the total thickness of the film adhesive for semiconductors is y, then the relationship between x and y is as follows: From the viewpoint of connectivity and adhesive fillability, it is preferable to satisfy 0.70x≦y≦1.3x, and more preferably to satisfy 0.80x≦y≦1.2x. The total thickness of the film adhesive for semiconductors may be, for example, 10 to 100 μm, 10 to 80 μm, or 10 to 50 μm.

In this embodiment, it is preferable to make the first layer 2 thick from the viewpoint of being able to further reduce the elastic modulus of the semiconductor film adhesive 1 after curing and further obtaining the effect of reducing warpage. The thickness of the first layer 2 may be, for example, 1 to 50 μm, 3 to 50 μm, 4 to 30 μm, or 5 to 20 μm.

The thickness of the second layer 3 may be, for example, 7 to 50 μm, 8 to 45 μm, or 10 to 40 μm.

The ratio of the thickness of the second layer 3 to the thickness of the first layer 2 (thickness of the second layer 3/thickness of the first layer 2) is, for example, 0.1 to 10.0. may be between 0.5 and 6.0, between 1.0 and 4.0, between 0.1 and 1.5, between 0.1 and 1.2. It may well be between 0.1 and 1.0.

In the film adhesive 1 for semiconductors described above, the probe tack value of the second layer can be made smaller than the probe tack value of the first layer 2, and contamination of the pickup tool can be prevented. The probe tack value of the first layer 2 is, for example, 70 N/cm ² or more and 150 N/cm ² or less, and 70 to 150 N/cm ² . The probe tack value of the second layer 3 is preferably 60 N/cm ² or less, more preferably 50 N/cm ² or less, and still more preferably 30 N/cm ² or less. The probe tack value of the second layer 3 may be 5 N/cm ² or more. The probe tack value of the second layer 3 may be, for example, 5-60 N/cm ² , 5-50 N/cm ² or 5-30 N/cm ² . The above probe tack value is a probe tack value at a probe temperature of 50° C. and a stage temperature of 25° C., and is specifically measured by the method described in Examples.

The elastic modulus of the film adhesive 1 for semiconductors after curing is, for example, 5 MPa or less, and from the viewpoint of further obtaining the effect of reducing warpage, it is preferably 4.5 MPa or less, and more preferably 3.5 MPa or less. be. The elastic modulus of the semiconductor film adhesive 1 after curing may be 1 MPa or more. For example, the elastic modulus of the semiconductor film adhesive 1 after curing may be 1 to 5 MPa, 1 to 4.5 MPa, or 1 to 3.5 MPa. The above elastic modulus can be measured by the method described in Examples. In other words, the elastic modulus of the semiconductor film adhesive 1 after curing is the elastic modulus of the cured product of the semiconductor film adhesive 1 obtained by heating the semiconductor film adhesive 1 at 240° C. for 1 hour. You can change it.

The film adhesive for semiconductors of this embodiment may further include layers other than the first layer and the second layer, or may consist of only the first layer and the second layer. It is preferable that the film adhesive for semiconductors does not include another layer on the side of the second layer opposite to the first layer. In addition, the film adhesive for semiconductors of this embodiment can be applied on the surface of the second layer opposite to the first layer, and/or on the surface of the first layer opposite to the second layer. A base film and/or a protective film may be provided thereon.

(Second embodiment)
In the second embodiment, the semiconductor film adhesive 1 has an elastic modulus of 5 MPa or less (for example, 1 to 5 MPa) at 35°C after curing, and a probe tack value of the second layer 3 (probe temperature 50°C). , probe tack value at a stage temperature of 25° C.) is 60 N/cm ² or less (for example, 5 to 60 N/cm ² ). According to such a film adhesive for semiconductors, by using the second layer 3 on the side that comes into contact with the pick-up tool, contamination of the pick-up tool can be suppressed, and it is also possible to suppress contamination of the pick-up tool. Warpage of the base body and semiconductor chip can be reduced.

Examples of the elastic modulus at 35° C. after curing of the semiconductor film adhesive 1, the range of the probe tack value of the first layer 2 and the probe tack value of the second layer 3, and the methods for measuring these are as follows: This is the same as the first embodiment. In addition, examples of the type and content of each component in the first layer 2 and the second layer 3, and the layer structure (layer thickness of the first layer 2 and the second layer 3, etc.) are as follows. The examples of the type, content, and layer thickness of each component are the same as those exemplified in the embodiment, and the preferred examples are also the same.

In the film adhesive for semiconductors of the second embodiment, for example, the first layer 2 contains the above-mentioned first thermoplastic resin, and the second layer 3 contains the above-mentioned second thermoplastic resin. This can be easily obtained. That is, typically, as the adhesive contains a thermoplastic resin with a lower Tg, the elastic modulus of the adhesive after curing can be reduced, but the tack value of the adhesive tends to increase. By containing the first thermoplastic resin in the first layer 2, the elastic modulus at 35° C. after curing can be easily set to 5 MPa or less, and the second thermoplastic resin is included in the second layer 3. By containing , the probe tack value of the second layer (probe tack value at a probe temperature of 50° C. and a stage temperature of 25° C.) can be made 60 N/cm ² or less.

<Method for producing film adhesive for semiconductors>
For example, the film adhesive for semiconductors of the above embodiment is prepared by preparing a first film adhesive having a first layer and a second film adhesive having a second layer, and It can be obtained by bonding together a first film adhesive having a layer and a second film adhesive having a second layer.

In the step of preparing the first film adhesive, for example, first, a thermosetting resin and a curing agent as thermosetting components, a first thermoplastic resin, a flux compound added as necessary, A resin varnish (coating varnish) is prepared by adding other components such as fillers into an organic solvent and dissolving or dispersing them by stirring, mixing, kneading, etc. After that, a resin varnish is applied onto the base film or protective film that has been subjected to mold release treatment using a knife coater, roll coater, applicator, etc., and then the organic solvent is reduced by heating, and the base film or protective film is A first layer of a first adhesive can be formed thereon.

The organic solvent used for preparing the resin varnish is preferably one having the property of uniformly dissolving or dispersing each component. Examples of organic solvents include dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene, xylene, methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve, dioxane, cyclohexanone, and ethyl acetate. These organic solvents can be used alone or in combination of two or more. Stirring, mixing and kneading during the preparation of the resin varnish can be carried out using, for example, a stirrer, a sieve, a three-roll mill, a ball mill, a bead mill, or a homodisper.

The base film and protective film are not particularly limited as long as they have heat resistance that can withstand the heating conditions used to volatilize the organic solvent, and include polyolefin films such as polypropylene films and polymethylpentene films, polyethylene terephthalate films, Examples include polyester films such as polyethylene naphthalate films, polyimide films, and polyetherimide films. The base film and the protective film are not limited to single layer films made of these films, but may be multilayer films made of two or more types of materials. Moreover, the above-mentioned base film and protective film may be provided with an adhesive layer on one side thereof.

The drying conditions for volatilizing the organic solvent from the resin varnish applied to the base film are preferably such that the organic solvent is sufficiently volatilized, specifically, at 50 to 200°C for 0.1 to 90 minutes. It is preferable to perform heating. It is preferable that the organic solvent be removed to 1.5% by mass or less based on the total mass of the first film adhesive, as long as it does not affect voids or viscosity adjustment after mounting.

In the step of preparing the second film adhesive, the second layer made of the second adhesive can be formed on the base film or the protective film by the same method as for the first layer. When a base film is used to form the first layer, a protective film may be used to form the second layer, and when a protective film is used to form the first layer, the second layer may be formed using a protective film. A base film may be used for formation.

Examples of the method for bonding the first film adhesive and the second film adhesive include hot pressing, roll lamination, vacuum lamination, and the like. Lamination may be performed, for example, under heating conditions of 30 to 120°C.

With the method described above, it is possible to obtain a base material and a protective film-attached film adhesive for semiconductors, which are provided with a film adhesive for semiconductors and a protective film on the base material in this order.

The film-like adhesive for semiconductors of the present embodiment, for example, after forming one of the first layer or the second layer on the base film, on the obtained first layer or second layer, It may be obtained by forming the other of the first layer or the second layer. The first layer and the second layer may be formed by the same method as the method for forming the first layer and the second layer in the production of the film adhesive described above.

The film adhesive for semiconductors of this embodiment may be obtained, for example, by forming a first layer and a second layer on a base film substantially simultaneously. Examples of methods for simultaneously producing the first adhesive and the second adhesive include coating methods such as a sequential coating method and a multilayer coating method.

<Method for manufacturing semiconductor devices>
Next, a method for manufacturing a semiconductor device using the above-described film adhesive for semiconductors 1 will be described.

2 to 6 are schematic cross-sectional views for explaining one embodiment of a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device of this embodiment is as follows:
(a) A semiconductor wafer A having a connecting portion 5 on one main surface, and a semiconductor wafer provided on the main surface of the semiconductor wafer A so that the surface on the first layer 2 side is on the semiconductor wafer A side. a step of preparing a laminate 6 comprising a film adhesive 1 (see FIG. 2);
(b) Semiconductor wafer A is obtained by grinding the side of the laminate 6 opposite to the side where the semiconductor film adhesive 1 is provided (the side opposite to the side where the connecting portion 5 of the semiconductor wafer A is provided). (see Figure 3),
(c) a step of dividing the laminate 6 after step (b) into pieces to obtain a film-like adhesive-attached semiconductor chip 8 having a connecting portion 5 (see FIG. 4);
(d) picking up the semiconductor chip 8 with film adhesive from the film adhesive 1a side (see FIG. 5);
(e) The semiconductor chip 8 with a film adhesive is placed on the main surface of the semiconductor chip mounting base 9 having the connection part 10 on one main surface where the connection part 10 is provided, using the film adhesive 1a. A step of electrically connecting the connection portion 5 of the semiconductor chip 8 with film adhesive and the connection portion 10 of the semiconductor chip mounting base 9 by placing it from the side and heating it (see FIG. 6);
Equipped with. Note that if a semiconductor wafer whose thickness has been adjusted in advance is used, step (b) may not be performed.

Each step will be described below with reference to the drawings.

Process (a)
Step (a) may be a step of preparing a laminate 6 produced in advance, or may be a step of producing the laminate 6. The laminate 6 may be produced, for example, by the following method.

First, a film-like adhesive for semiconductors with a base material in which a base material 4 is provided on the second layer 3 side of the film-like adhesive for semiconductors 1 is prepared, and this is placed in a predetermined device (Fig. 2(a) )reference). Next, a semiconductor wafer A having connection portions 5 (wiring, bumps, etc.) on one main surface is prepared, and a semiconductor film adhesive is applied to the main surface of the semiconductor wafer A (the surface on which the connection portions 5 are provided). Apply agent 1. As a result, a laminate with a base material including a laminate 6 in which the semiconductor wafer A, the first layer 2, and the second layer 3 are laminated in this order is obtained (see FIG. 2(b)).

The film adhesive 1 for semiconductors can be attached by heat pressing, roll lamination, vacuum lamination, or the like. The supply area and thickness of the semiconductor film adhesive 1 are appropriately set depending on the size of the semiconductor wafer and the semiconductor chip mounting substrate, the height of the connecting portion, and the like.

Process (b)
In step (b), the semiconductor wafer A of the stacked body 6 is ground using, for example, a grinder G (see FIGS. 3(a) and 3(b)). The thickness of the semiconductor wafer after grinding may be, for example, 10 μm to 300 μm. From the viewpoint of reducing the size and thickness of semiconductor devices, it is preferable that the thickness of the semiconductor wafer is 20 μm to 100 μm.

Process (c)
In step (c), for example, first, a dicing tape 7 is attached to the semiconductor wafer A side of the laminate 6, and the dicing tape 7 is placed in a predetermined device and the base material 4 is peeled off (see FIG. 4(a)). The base material 4 may be peeled off before the laminate 6 is attached to the dicing tape 7. Next, the laminate 6 is diced using a dicing saw D. In this way, the laminate 6 is separated into individual pieces, and a semiconductor chip 8 with a film-like adhesive having the film-like adhesive 1a on the semiconductor chip A' is obtained (see FIG. 4(b)). A connecting portion 5 is provided on the surface of the semiconductor chip A' on the film adhesive 1a side. The film adhesive 1a has a layer 2a made of a first adhesive and a layer 3a made of a second adhesive.

Process (d)
In step (d), for example, by expanding the dicing tape 7, the film-like adhesive-attached semiconductor chips 8 obtained by the dicing are separated from each other and pushed up from the dicing tape 7 side with a needle N. The film adhesive-attached semiconductor chip 8 is picked up by the pickup tool P from the film adhesive 1a side (see FIG. 5).

Process (e)
In step (e), for example, after the semiconductor chip 8 with film adhesive is delivered to the bonding tool, the semiconductor chip 8 with film adhesive is mounted from the film adhesive 1a side using the bonding tool. The substrate 9 is placed on the main surface on which the connection portion 10 (wiring, bumps, etc.) is provided and heated (see FIGS. 6(a) and 6(b)). At the time of arrangement, the semiconductor chip 8 with film adhesive and the semiconductor chip mounting base 9 are aligned. As a result, the connection part 5 of the semiconductor chip 8 with film adhesive and the connection part 10 of the semiconductor chip mounting base 9 are electrically connected, and the semiconductor chip A' and the semiconductor chip mounting base 9 are electrically connected. A sealing portion 1a' made of a cured film adhesive 1a is formed on the substrate, and the connecting portion 5 and the connecting portion 10 are sealed to obtain a semiconductor device 11. The sealing part 1a' has an upper part 2a' containing a cured product of the first adhesive and a lower part 3a' containing a cured product of the second adhesive.

In addition, when a solder bump is used on one of the connecting portion 5 or the connecting portion 10 (for example, when the connecting portion 5 or the connecting portion 10 is a wiring provided with a solder bump), the connecting portion 5 and the connecting portion 10 are are electrically and mechanically connected by soldering.

The heating in step (e) may be performed while placing the semiconductor chip, or may be performed after placing the semiconductor chip. The heating and placement in step (e) may be thermocompression bonding. In step (e), after positioning, the bumps (for example, solder bumps) provided at the connection part are fixed temporarily (through a semiconductor film adhesive) and heat-treated in a reflow oven. The semiconductor chip A' and the semiconductor chip mounting base 9 may be connected by melting. At the temporary fixing stage, it is not necessarily necessary to form a metal bond, so crimping can be performed with less force, in a shorter time, and at a lower temperature compared to the method of placing while heating, which improves productivity and improves the connection area. deterioration can be suppressed.

After connecting the semiconductor chip A' and the semiconductor chip mounting base 9, heat treatment may be performed in an oven or the like to further improve connection reliability. The heating temperature is preferably a temperature at which curing of the film adhesive proceeds, more preferably a temperature at which it is completely cured. The heating temperature and heating time are set appropriately.

The connection load is set in consideration of variations in the number and height of the connection parts, the amount of deformation of the connection parts due to pressurization, and the like. As for the connection temperature, it is preferable that the temperature of the connection part is equal to or higher than the melting point of the connection part (for example, the melting point of the bump), but it may be a temperature at which metal bonding of each connection part is formed. If solder bumps are used for the connections, the temperature is preferably about 240° C. or higher.

The connection time at the time of connection varies depending on the constituent metal of the connection part, but from the viewpoint of improving productivity, the shorter the connection time, the more preferable. When solder bumps are used for the connection portion, the connection time is preferably 20 seconds or less, more preferably 10 seconds or less, and even more preferably 5 seconds or less. In the case of copper-copper or copper-gold metal connections, the connection time is preferably 60 seconds or less.

As the semiconductor wafer, a wafer made of an elemental semiconductor made of the same type of elements such as silicon and germanium, a wafer made of a compound semiconductor such as gallium arsenide, indium phosphide, etc. can be used. Details of the semiconductor chip mounting base and the connection portion will be described later.

<Semiconductor device>
A semiconductor device manufactured using the film adhesive for semiconductors of this embodiment will be specifically described using FIG. 7. FIG. 7 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 100 shown in FIG. 7A includes a semiconductor chip 20 and a semiconductor chip mounting base 25 facing each other, and wiring 15 arranged on mutually facing surfaces of the semiconductor chip 20 and the semiconductor chip mounting base 25, respectively. , the connection bumps 30 that connect the wiring 15 of the semiconductor chip 20 and the semiconductor chip mounting base 25 to each other, and the adhesive (first adhesive) filled in the gap between the semiconductor chip 20 and the semiconductor chip mounting base 25 without any gaps. and a sealing portion 40 made of a cured product of a second adhesive. The semiconductor chip 20 and the semiconductor chip mounting base 25 are flip-chip connected by wiring 15 and connection bumps 30. The wiring 15 and the connection bumps 30 are sealed with a cured adhesive and are isolated from the external environment. The sealing portion 40 has an upper portion 40a containing a cured product of the first adhesive and a lower portion 40b containing a cured product of the second adhesive.

The semiconductor device 200 shown in FIG. 7B includes a semiconductor chip 20 and a semiconductor chip mounting base 25 facing each other, and bumps 32 arranged on mutually facing surfaces of the semiconductor chip 20 and the semiconductor chip mounting base 25, respectively. , a sealing part 40 made of a cured adhesive (a first adhesive and a second adhesive) filled in the gap between the semiconductor chip 20 and the semiconductor chip mounting base 25 without any gaps. . The semiconductor chip 20 and the semiconductor chip mounting base 25 are flip-chip connected by connecting the opposing bumps 32 to each other. The bump 32 is sealed with a cured adhesive and is isolated from the external environment. The sealing portion 40 has an upper portion 40a containing a cured product of the first adhesive and a lower portion 40b containing a cured product of the second adhesive.

The semiconductor chip 20 is not particularly limited, and may be a semiconductor chip made of an elemental semiconductor made of the same type of elements such as silicon or germanium, or a semiconductor chip made of a compound semiconductor such as gallium arsenide or indium phosphide. be able to.

The semiconductor chip mounting base 25 is not particularly limited as long as it is used for mounting the semiconductor chip 20, and examples thereof include a semiconductor chip, a semiconductor wafer, a printed circuit board, and the like.

An example of a semiconductor chip that can be used as the semiconductor chip mounting base 25 is the same as the example of the semiconductor chip 20 described above, and the same semiconductor chip as the semiconductor chip 20 may be used as the semiconductor chip mounting base 25.

The semiconductor wafer that can be used as the semiconductor chip mounting base 25 is not particularly limited, and may have a structure in which a plurality of semiconductor chips exemplified as the semiconductor chip 20 are connected.

There are no particular restrictions on the printed circuit board that can be used as the semiconductor chip mounting base 25, and the surface of the insulating substrate whose main component is glass epoxy, polyimide, polyester, ceramic, epoxy, bismaleimide triazine, etc. A circuit board having wiring (wiring pattern) 15 formed by etching away unnecessary parts of the film, a circuit board having wiring 15 formed on the surface of the insulating substrate by metal plating, etc., a circuit board having conductive wiring on the surface of the insulating substrate. A circuit board or the like on which the wiring 15 is formed by printing a chemical substance can be used.

The connection parts such as the wiring 15 and the bumps 32 are made of gold, silver, copper, or solder as main components (for example, the main components are tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.). ), nickel, tin, lead, etc., and may contain multiple metals.

Among the above-mentioned metals, gold, silver, and copper are preferred, and silver and copper are more preferred, from the viewpoint of providing a package with excellent electrical conductivity and thermal conductivity at the connecting portion. From the viewpoint of providing a package with reduced cost, silver, copper, and solder, which are inexpensive materials, are preferable, copper and solder are more preferable, and solder is even more preferable. If an oxide film is formed on the surface of a metal at room temperature, productivity may decrease and costs may increase. Therefore, from the viewpoint of suppressing the formation of an oxide film, gold, silver, copper, and solder are preferable. , solder is more preferred, and gold and silver are even more preferred.

The surfaces of the wiring 15 and bumps 32 are mainly made of gold, silver, copper, solder (main components are, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, etc.), tin, nickel, etc. The metal layer as a component may be formed by plating, for example. This metal layer may be composed of only a single component or a plurality of components. Further, the metal layer may have a single layer structure or a structure in which a plurality of metal layers are stacked.

The semiconductor devices 100 and 200 can be obtained by the semiconductor device manufacturing method described above.

The semiconductor device of this embodiment may be one in which a plurality of structures (packages) as shown in the semiconductor devices 100 and 200 are stacked. In this case, the semiconductor devices 100 and 200 include gold, silver, copper, solder (main components include, for example, tin-silver, tin-lead, tin-bismuth, tin-copper, tin-silver-copper, etc.), tin, nickel, etc. They may be electrically connected to each other by bumps, wiring, etc., including the like.

As a method of stacking a plurality of semiconductor devices, for example, TSV (Through-Silicon Via) technology can be cited as shown in FIG. FIG. 8 is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention, which is a semiconductor device using TSV technology. In the semiconductor device 500 shown in FIG. 8, the wiring 15 formed on the interposer 50 is connected to the wiring 15 of the semiconductor chip 20 via the connection bumps 30, so that the semiconductor chip 20 and the interposer 50 are flip-chip connected. ing. The gap between the semiconductor chip 20 and the interposer 50 is filled with cured adhesives (a first adhesive and a second adhesive) to form a sealing part 40 . On the surface of the semiconductor chip 20 on the side opposite to the interposer 50, the semiconductor chips 20 are repeatedly stacked with the wiring 15, the connection bumps 30, and the sealing part 40 interposed therebetween. The wirings 15 on the pattern surfaces on the front and back sides of the semiconductor chip 20 are connected to each other by through electrodes 34 filled in holes penetrating the inside of the semiconductor chip 20. Note that as the material of the through electrode 34, copper, aluminum, etc. can be used.

Such TSV technology makes it possible to obtain signals even from the back side of a semiconductor chip, which is not normally used. Furthermore, since the through electrodes 34 are vertically passed through the semiconductor chips 20, the distances between the opposing semiconductor chips 20 and between the semiconductor chips 20 and the interposer 50 can be shortened, allowing for flexible connections. The film adhesive for semiconductors of this embodiment can be applied as a film adhesive for semiconductors between the opposing semiconductor chips 20 and between the semiconductor chips 20 and the interposer 50 in such TSV technology.

Furthermore, with a highly flexible bump forming method such as area bump chip technology, a semiconductor chip can be directly mounted on a motherboard without using an interposer. The film adhesive for semiconductors of this embodiment can also be applied when such semiconductor chips are directly mounted on a motherboard. Note that the film adhesive for semiconductors of this embodiment can also be applied to seal a gap between two printed circuit boards when laminating them.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments.

Hereinafter, the present invention will be explained in more detail using Examples and Comparative Examples, but the present invention is not limited to the following Examples.

<Preparation of monolayer film A>
The compounds used to prepare the monolayer film A are shown below.

[Epoxy resin]
・EP1032 (triphenolmethane skeleton-containing polyfunctional solid epoxy, manufactured by Mitsubishi Chemical Corporation, product name "jER1032H60", "jER" is a registered trademark (the same applies hereinafter))
・YL983U (Bisphenol F type liquid epoxy, manufactured by Mitsubishi Chemical Corporation, product name "jERYL983U")

[Curing agent]
・2MAOK-PW (2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name)

[Flux compound]
・Glutaric acid (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd., melting point approximately 98°C)

[Thermoplastic resin]
・LA2140 (acrylic resin, manufactured by Kuraray Co., Ltd., product name "Clarity LA2140", "Clarity" is a registered trademark, Tg: about -24℃, Mw: about 60000)
・D-21 (acrylic resin, manufactured by Hitachi Chemical Co., Ltd., product name "CT-D21", Tg: about -11°C, Mw: about 550,000)
・T-8175N (urethane resin, manufactured by DIC Covestro Polymer Co., Ltd., product name "Pandex T-8175N", "Pandex" is a registered trademark, Tg: -23℃, Mw: 120000)

[Filler]
・SE2050 (Silica filler, manufactured by Admatex Co., Ltd., trade name, average particle size: 0.5 μm)
・SE2050-SEJ (epoxy silane surface treatment filler, manufactured by Admatex Co., Ltd., trade name, average particle size: 0.5 μm)
・YA050C-HGF (methacrylic surface treated nano silica filler, Admatex Co., Ltd., trade name, average particle size: approximately 50 nm)
・EXL-2655 (organic filler, manufactured by Rohm and Haas Japan Co., Ltd., product name "Paraloid EXL-2655", "Paraloid" is a registered trademark, core-shell type organic fine particles)

The epoxy resin, curing agent, flux compound, thermoplastic resin, and filler in the amounts (unit: parts by mass) shown in Table 1 were added to the NV value ([mass of paint after drying]/[mass of paint before drying] x 100) was added to an organic solvent (cyclohexanone) at a concentration of 50%. After that, beads of Φ1.0 mm and beads of Φ2.0 mm were added in the same mass as the solid content (epoxy resin, curing agent, flux compound, thermoplastic resin, and filler), and a bead mill (manufactured by Fritsch Japan Co., Ltd., planetary micrometer) was added. The mixture was stirred for 30 minutes using a pulverizer P-7). After stirring, the beads were removed by filtration to produce coating varnishes a1 to a3 containing the first adhesive.

The obtained coating varnishes A1 to A3 were coated onto a base film (manufactured by Teijin DuPont Films Ltd., trade name "Purex A54") using a small precision coating device (manufactured by Renai Seiki Co., Ltd.). The film was dried (100° C./5 min) in a clean oven (manufactured by ESPEC Corporation) to obtain a monolayer film A having a layer (thermosetting adhesive layer) having a thickness shown in Table 2.

<Preparation of monolayer film B>
Among the compounds used in the production of the monolayer film B, compounds other than those used in the production of the monolayer film A are shown below.
[Thermoplastic resin]
・ZX1356-2 (phenoxy resin, Nippon Steel & Sumikin Chemical Co., Ltd., trade name, Tg: approx. 71°C, weight average molecular weight Mw: approx. 63000)
・FX-293 (Phenoxy resin, Nippon Steel & Sumikin Chemical Co., Ltd., trade name, Tg: approx. 160°C, weight average molecular weight Mw: approx. 40000)

The epoxy resin, curing agent, flux compound, thermoplastic resin, and filler in the amounts (unit: parts by mass) shown in Table 3 were added to the NV value ([mass of paint after drying] / [mass of paint before drying] × 100) was added to an organic solvent (cyclohexanone) at a concentration of 50%. After that, beads of Φ1.0 mm and beads of Φ2.0 mm were added in the same mass as the solid content (epoxy resin, curing agent, flux compound, thermoplastic resin, and filler), and a bead mill (manufactured by Fritsch Japan Co., Ltd., planetary micrometer) was added. The mixture was stirred for 30 minutes using a pulverizer P-7). After stirring, the beads were removed by filtration to produce coating varnishes b1 and b2 containing the second adhesive.

The obtained coating varnishes b1 and b2 were coated onto a base film (manufactured by Teijin DuPont Films Ltd., trade name "Purex A54") using a small precision coating device (manufactured by Renai Seiki Co., Ltd.). The film was dried (100° C./5 min) in a clean oven (manufactured by ESPEC Corporation) to obtain a single-layer film B having a layer (thermosetting adhesive layer) having a thickness shown in Table 4.

<Preparation of two-layer film>
(Examples 1 to 7 and Comparative Examples 1 to 8)
Two of the single-layer films produced above were prepared as a first film and a second film, and the first film and second film were laminated at 50°C to form a film with a total thickness of 40 μm. An adhesive was made. The combinations of single layer films were as shown in Tables 5 and 6. Hereinafter, the layer formed on the first film (thermosetting adhesive layer) will be referred to as the first layer, and the layer formed on the second film (thermosetting adhesive layer) will be referred to as the second layer. It is called the layer of

<Evaluation>
Elastic modulus evaluation, tack evaluation, and chip warpage evaluation were performed on the film adhesives (laminates of the first layer and the second layer) obtained in the examples and comparative examples using the methods shown below. . The results are shown in Tables 5 and 6.

(Evaluation of elastic modulus)
Two film adhesives were prepared and laminated at 50°C using a tabletop laminator (Hotdog GK-13DX, manufactured by Lamy Corporation) to create a film adhesive with a total thickness of 80 μm. (A laminate in which the first layer, the second layer, the first layer, and the second layer were stacked in this order) was obtained. The obtained film-like adhesive (laminate) was cut into a predetermined size (40 mm long x 4.0 mm wide x 0.08 mm thick) and cured (240°C, 1 h) in a clean oven (manufactured by ESPEC Corporation). A test sample was obtained.

The elastic modulus of the above test sample at 35° C. was measured using a dynamic viscoelasticity measuring device. Details of the method for measuring the elastic modulus are as follows.
Device name: Dynamic viscoelasticity measurement device (manufactured by UBM Co., Ltd., Rheogel-E4000)
Measurement temperature range: 30-270℃
Temperature increase rate: 5℃/min
Frequency: 10Hz
Distortion: 0.05%

(Tack evaluation)
Cut the film adhesive into a predetermined size (76 mm long x 26 mm wide), peel off the base film on the second layer side, and place a glass plate (size: 76 mm long x 26 mm wide x thick) on the surface from which the base film was peeled off. 1.2 to 1.5 mm) was pasted. Next, the base film on the first layer side was peeled off, and the tack value (probe tack value) of the first layer was measured using a tacking tester with the surface of the first layer facing up. .

Cut the film adhesive to a predetermined size (length 76 mm x width 26 mm), peel off the base film on the first layer side, and attach a glass plate (size: length 76 mm x width 26 mm x thickness) to the surface from which the base film was peeled off. 1.2 to 1.5 mm) was pasted. Next, the base film on the second layer side was peeled off, and the tack value (probe tack value) of the second layer was measured using a tacking tester with the surface of the second layer facing up. .

Details of the method for measuring the tack value are as follows.
Equipment name: Tacking tester (manufactured by Resca Co., Ltd., product name: TAC-1000)
Pressing speed 2.0mm/s
Pressing load 200gf
Pressing time 1.00s
Pulling speed 10.0mm/s
Stage temperature 25℃
Probe temperature 50℃

(Evaluation of chip warpage)
Using a vacuum laminator (LM-50X50-S, manufactured by NPC Corporation), apply the film adhesive to a silicon chip (length 10 mm x width) whose surface is covered with an oxide film from the first layer side. It was laminated on the oxide film (10 mm x 0.05 mm thick). Next, the silicon chip laminated with the film adhesive was cured (240° C., 1 hour) in a clean oven (manufactured by ESPEC). This gave a test sample.

The amount of chip warpage of the test sample was measured using a surface shape measuring device (manufactured by Akrometrix). Specifically, with the above test sample placed so that the silicon chip is on the lower side (the cured film adhesive is on the upper side), the surface profile measuring device is used to measure the side of the cured film adhesive. The maximum value of the height difference on the surface was measured, and this was taken as the amount of warpage.

Claims (10)

comprising a first thermosetting adhesive layer and a second thermosetting adhesive layer provided on the first thermosetting adhesive layer,
The first thermosetting adhesive layer is made of a first adhesive containing a first thermoplastic resin having a Tg of less than 35°C,
The second thermosetting adhesive layer is made of a second adhesive containing a second thermoplastic resin having a Tg of 35° C. or higher,
The content of the first thermoplastic resin contained in the first adhesive is more than 50% by mass based on the total mass of the thermoplastic resin contained in the first adhesive,
The content of the second thermoplastic resin contained in the second adhesive is more than 50% by mass based on the total mass of the thermoplastic resin contained in the second adhesive, Film adhesive. The film adhesive for semiconductors according to claim 1, having an elastic modulus at 35° C. after curing of 5 MPa or less. The film adhesive for semiconductors according to claim 1 or 2, wherein the second thermoplastic resin has a Tg of 60°C or higher. The film adhesive for semiconductors according to any one of claims 1 to 3, wherein the second thermoplastic resin contains a phenoxy resin. The film adhesive for semiconductors according to any one of claims 1 to 4, wherein the first thermoplastic resin contains a (meth)acrylic resin or a urethane resin. Any one of claims 1 to 5, wherein at least one of the first thermosetting adhesive layer and the second thermosetting adhesive layer contains a thermosetting resin and a curing agent. The film adhesive for semiconductors described in . Any one of claims 1 to 6, wherein at least one of the first thermosetting adhesive layer and the second thermosetting adhesive layer contains an epoxy resin and an imidazole curing agent. The film adhesive for semiconductors described in . The semiconductor according to any one of claims 1 to 7, wherein the second thermosetting adhesive layer has a probe tack value of 60 N/cm ² or less at a probe temperature of 50° C. and a stage temperature of 25° C. Film adhesive. A semiconductor wafer having a connection portion on one main surface, and a first thermosetting adhesive layer provided on the main surface of the semiconductor wafer so that the surface on the side of the first thermosetting adhesive layer is on the side of the semiconductor wafer. A step of preparing a laminate comprising the semiconductor film adhesive according to any one of Items 1 to 8;
A step of dividing the laminate into pieces to obtain a semiconductor chip with a film-like adhesive having the connection portion;
picking up the semiconductor chip with film adhesive from the film adhesive side;
The semiconductor chip with the film adhesive is placed on the main surface of the semiconductor chip mounting base having the connection part on one main surface, where the connection part is provided, from the film adhesive side, and heated. A method for manufacturing a semiconductor device, comprising the step of electrically connecting the connecting portion of the film-like adhesive-attached semiconductor chip and the connecting portion of the semiconductor chip mounting base. A semiconductor device in which connection portions of a semiconductor chip and a semiconductor chip mounting base are electrically connected to each other,
A semiconductor device, wherein at least a portion of the connection portion is sealed with a cured product of the film adhesive for semiconductors according to any one of claims 1 to 8.

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