JP7362736B2 - 高出力レーザダイオードパッケージ - Google Patents
高出力レーザダイオードパッケージ Download PDFInfo
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- JP7362736B2 JP7362736B2 JP2021526705A JP2021526705A JP7362736B2 JP 7362736 B2 JP7362736 B2 JP 7362736B2 JP 2021526705 A JP2021526705 A JP 2021526705A JP 2021526705 A JP2021526705 A JP 2021526705A JP 7362736 B2 JP7362736 B2 JP 7362736B2
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- 230000005499 meniscus Effects 0.000 claims description 40
- 230000003287 optical effect Effects 0.000 claims description 19
- 239000011521 glass Substances 0.000 claims description 8
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 239000013307 optical fiber Substances 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000001902 propagating effect Effects 0.000 claims description 2
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0977—Reflective elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/106—Beam splitting or combining systems for splitting or combining a plurality of identical beams or images, e.g. image replication
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
- G02B27/144—Beam splitting or combining systems operating by reflection only using partially transparent surfaces without spectral selectivity
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2036—Broad area lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4075—Beam steering
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Semiconductor Lasers (AREA)
Description
Claims (5)
- 互いに間隔をあけて平行に配置された別々のビーム軸に沿って伝搬する複数のレーザビームを放射するように構成された複数の広域レーザダイオードを含むレーザダイオードアセンブリにおいて、前記レーザダイオードの各々は、速軸方向において速い発散速度を示し、遅軸方向において遅い発散速度を示し、前記複数の放射レーザビームの各々は、速軸コリメーション光学系及び遅軸コリメーション光学系によって受光されてコリメートされて、対物レンズへの送達のためにそれぞれの光反射素子によって反射される複数のコリメートされたレーザビームのうちの1つを形成し、前記対物レンズは、前記光反射素子によって反射された前記複数のレーザビームを光ファイバに向ける、レーザダイオードアセンブリであって、
前記遅軸コリメーション光学系は、光軸に沿って分離され、前記遅軸コリメーション光学系として機能するメニスカス遅軸コリメータレンズを形成するように構成された第1及び第2の面を有する透過性光学基板であって、前記第1の面は、前記複数の放射レーザビームのうちの1つを受光するように位置決めされ、負のレンズ表面屈折力を付与して、受光された前記複数の放射レーザビームのうちの1つを外側に発散させる第1の曲率を有し、受光された前記複数の放射レーザビームのうちの1つは、前記遅い発散速度よりも速い速度で外側に発散して、急速に発散するビームを形成し、前記第2の面は、前記負のレンズ表面屈折力よりも強い正のレンズ表面屈折力を付与して、前記急速に発散するビームをコリメートする第2の曲率を有する透過性光学基板を含み、
5mmから15mmの間の焦点距離を有する標準平凸遅軸コリメーション光学系の焦点距離及び後方焦点距離を公称焦点距離及び公称後方焦点距離とした場合に、前記メニスカス遅軸コリメータレンズは、前記公称焦点距離よりも長いメニスカスレンズ焦点距離を有し、且つ、前記公称後方焦点距離と実質的に同じであるメニスカスレンズ後方焦点距離を有し、
前記第1の曲率が、非球面プロファイルを有し、前記第2の曲率が、非球面プロファイルを有する、
レーザダイオードアセンブリ。 - 前記複数の広域レーザダイオードが、前記メニスカス遅軸コリメータレンズへの入射のために前記レーザビームが伝搬する経路長をもたらすパッケージ内に収容され、前記標準平凸遅軸コリメーション光学系が所定の遅軸残留発散を示すとした場合に、前記メニスカス遅軸コリメータレンズは、前記所定の遅軸残留発散よりも小さい遅軸残留発散と、その結果として、開口数の減少と輝度の増加とを提供する、請求項1に記載のレーザダイオードアセンブリ。
- 前記第1の曲率及び前記第2の曲率は、それぞれ、第1の曲率半径及び第2の曲率半径と関連付けられ、前記第2の曲率半径は、前記第1の曲率半径よりも長い、請求項1に記載のレーザダイオードアセンブリ。
- 受光された前記複数の放射レーザビームのうちの1つが、レーザビーム波長を有し、前記透過性光学基板が、前記ビーム波長と動作的に適合するタイプのガラスであり、前記コリメートされたビームの残留発散を最小にする値の中心ガラス厚を有する、請求項1に記載のレーザダイオードアセンブリ。
- 前記複数の広域レーザダイオードが、低減モード(REM)ダイオードを含む、請求項1に記載のレーザダイオードアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/192,696 | 2018-11-15 | ||
US16/192,696 US10651355B1 (en) | 2018-11-15 | 2018-11-15 | High-power laser diode package implemented with meniscus slow axis collimator for reduced diode package footprint or improved laser output brightness |
PCT/US2018/062889 WO2020101717A1 (en) | 2018-11-15 | 2018-11-28 | High-power laser diode package |
Publications (2)
Publication Number | Publication Date |
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JP2022518100A JP2022518100A (ja) | 2022-03-14 |
JP7362736B2 true JP7362736B2 (ja) | 2023-10-17 |
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Application Number | Title | Priority Date | Filing Date |
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JP2021526705A Active JP7362736B2 (ja) | 2018-11-15 | 2018-11-28 | 高出力レーザダイオードパッケージ |
Country Status (5)
Country | Link |
---|---|
US (1) | US10651355B1 (ja) |
EP (1) | EP3864728A4 (ja) |
JP (1) | JP7362736B2 (ja) |
CN (1) | CN113243066A (ja) |
WO (1) | WO2020101717A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2019157092A1 (en) * | 2018-02-06 | 2019-08-15 | Nlight, Inc. | Diode laser apparatus with fac lens out-of-plane beam steering |
DE102020118421B4 (de) * | 2020-07-13 | 2023-08-03 | Focuslight Technologies Inc. | Laservorrichtung |
CN115810970A (zh) * | 2021-09-14 | 2023-03-17 | 杭州沪宁亮源激光器件有限公司 | 带冷却的泵浦源系统 |
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2018
- 2018-11-15 US US16/192,696 patent/US10651355B1/en active Active
- 2018-11-28 JP JP2021526705A patent/JP7362736B2/ja active Active
- 2018-11-28 CN CN201880100160.XA patent/CN113243066A/zh active Pending
- 2018-11-28 WO PCT/US2018/062889 patent/WO2020101717A1/en unknown
- 2018-11-28 EP EP18940263.9A patent/EP3864728A4/en active Pending
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US20140064305A1 (en) | 2012-08-28 | 2014-03-06 | Optical Engines, Inc. | Efficient Generation of Intense Laser Light from Multiple Laser Light Sources Using Misaligned Collimating Optical Elements |
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CN108092130A (zh) | 2017-12-25 | 2018-05-29 | 北京凯普林光电科技股份有限公司 | 一种半导体激光器封装结构 |
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Publication number | Publication date |
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JP2022518100A (ja) | 2022-03-14 |
EP3864728A1 (en) | 2021-08-18 |
WO2020101717A1 (en) | 2020-05-22 |
CN113243066A (zh) | 2021-08-10 |
EP3864728A4 (en) | 2022-06-29 |
US10651355B1 (en) | 2020-05-12 |
US20200161515A1 (en) | 2020-05-21 |
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