JP7334849B2 - シリコン単結晶基板中のドナー濃度の制御方法 - Google Patents

シリコン単結晶基板中のドナー濃度の制御方法 Download PDF

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JP7334849B2
JP7334849B2 JP2022508124A JP2022508124A JP7334849B2 JP 7334849 B2 JP7334849 B2 JP 7334849B2 JP 2022508124 A JP2022508124 A JP 2022508124A JP 2022508124 A JP2022508124 A JP 2022508124A JP 7334849 B2 JP7334849 B2 JP 7334849B2
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single crystal
concentration
silicon single
crystal substrate
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JPWO2021186944A1 (https=
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博 竹野
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2022508124A 2020-03-17 2021-02-08 シリコン単結晶基板中のドナー濃度の制御方法 Active JP7334849B2 (ja)

Applications Claiming Priority (3)

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JP2020046938 2020-03-17
JP2020046938 2020-03-17
PCT/JP2021/004559 WO2021186944A1 (ja) 2020-03-17 2021-02-08 シリコン単結晶基板中のドナー濃度の制御方法

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JPWO2021186944A1 JPWO2021186944A1 (https=) 2021-09-23
JP7334849B2 true JP7334849B2 (ja) 2023-08-29

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EP (1) EP4123686A4 (https=)
JP (1) JP7334849B2 (https=)
CN (1) CN115280472B (https=)
WO (1) WO2021186944A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025084305A1 (ja) * 2023-10-17 2025-04-24 富士電機株式会社 半導体基板の評価方法および半導体装置の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344977A (ja) 2005-06-08 2006-12-21 Infineon Technologies Ag 阻止ゾーンを半導体基板に製造する方法、および、阻止ゾーンを有する半導体部品
WO2007055352A1 (ja) 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
WO2011052787A1 (ja) 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
WO2013141221A1 (ja) 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法
JP2015037194A (ja) 2013-08-14 2015-02-23 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体ディスクの後ドーピング方法
JP2016096338A (ja) 2014-11-14 2016-05-26 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体装置を形成する方法および半導体装置
JP2017063187A (ja) 2015-08-26 2017-03-30 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体デバイス、シリコンウェハ、及びシリコンウェハの製造方法
JP2019062189A (ja) 2017-08-18 2019-04-18 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Ｃｚ半導体ボディを含む半導体装置およびｃｚ半導体ボディを含む半導体装置を製造する方法
WO2019239762A1 (ja) 2018-06-12 2019-12-19 信越半導体株式会社 シリコン単結晶基板中の欠陥密度の制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3341378B2 (ja) * 1993-08-25 2002-11-05 富士通株式会社 シリコン結晶中の水素濃度測定方法及びシリコン結晶の製造方法
JPH07301592A (ja) * 1994-05-09 1995-11-14 Fujitsu Ltd 半導体装置の製造方法及び気体中の水素濃度測定方法
JP3684962B2 (ja) 1999-12-01 2005-08-17 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
EP2793266B1 (en) * 2011-12-15 2020-11-11 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device
JP6020553B2 (ja) * 2012-03-19 2016-11-02 富士電機株式会社 半導体装置の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344977A (ja) 2005-06-08 2006-12-21 Infineon Technologies Ag 阻止ゾーンを半導体基板に製造する方法、および、阻止ゾーンを有する半導体部品
WO2007055352A1 (ja) 2005-11-14 2007-05-18 Fuji Electric Device Technology Co., Ltd. 半導体装置およびその製造方法
WO2011052787A1 (ja) 2009-11-02 2011-05-05 富士電機システムズ株式会社 半導体装置および半導体装置の製造方法
WO2013141221A1 (ja) 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法
JP2015037194A (ja) 2013-08-14 2015-02-23 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体ディスクの後ドーピング方法
JP2016096338A (ja) 2014-11-14 2016-05-26 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体装置を形成する方法および半導体装置
JP2017063187A (ja) 2015-08-26 2017-03-30 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ 半導体デバイス、シリコンウェハ、及びシリコンウェハの製造方法
JP2019062189A (ja) 2017-08-18 2019-04-18 インフィネオン テクノロジーズ アーゲーＩｎｆｉｎｅｏｎ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ａｇ Ｃｚ半導体ボディを含む半導体装置およびｃｚ半導体ボディを含む半導体装置を製造する方法
WO2019239762A1 (ja) 2018-06-12 2019-12-19 信越半導体株式会社 シリコン単結晶基板中の欠陥密度の制御方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025084305A1 (ja) * 2023-10-17 2025-04-24 富士電機株式会社 半導体基板の評価方法および半導体装置の製造方法

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JPWO2021186944A1 (https=) 2021-09-23
WO2021186944A1 (ja) 2021-09-23
EP4123686A1 (en) 2023-01-25
CN115280472A (zh) 2022-11-01
EP4123686A4 (en) 2024-05-01
CN115280472B (zh) 2025-07-25

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