JP7301075B2 - リモートプラズマ源用のラジカル出力モニタ及びその使用方法 - Google Patents

リモートプラズマ源用のラジカル出力モニタ及びその使用方法 Download PDF

Info

Publication number
JP7301075B2
JP7301075B2 JP2020568979A JP2020568979A JP7301075B2 JP 7301075 B2 JP7301075 B2 JP 7301075B2 JP 2020568979 A JP2020568979 A JP 2020568979A JP 2020568979 A JP2020568979 A JP 2020568979A JP 7301075 B2 JP7301075 B2 JP 7301075B2
Authority
JP
Japan
Prior art keywords
plasma source
gas
plasma
thermal sensor
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020568979A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021530076A5 (enExample
JP2021530076A (ja
Inventor
ハリス，マイケル
タイ，チウヤン
グプタ，アトゥル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MKS Inc
Original Assignee
MKS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MKS Inc filed Critical MKS Inc
Publication of JP2021530076A publication Critical patent/JP2021530076A/ja
Publication of JP2021530076A5 publication Critical patent/JP2021530076A5/ja
Application granted granted Critical
Publication of JP7301075B2 publication Critical patent/JP7301075B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0068—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by thermal means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954—Electron temperature measurement

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2020568979A 2018-06-14 2019-06-12 リモートプラズマ源用のラジカル出力モニタ及びその使用方法 Active JP7301075B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862684820P 2018-06-14 2018-06-14
US62/684,820 2018-06-14
PCT/US2019/036796 WO2019241405A1 (en) 2018-06-14 2019-06-12 Radical output monitor for a remote plasma source and method of use

Publications (3)

Publication Number Publication Date
JP2021530076A JP2021530076A (ja) 2021-11-04
JP2021530076A5 JP2021530076A5 (enExample) 2022-06-27
JP7301075B2 true JP7301075B2 (ja) 2023-06-30

Family

ID=68840258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020568979A Active JP7301075B2 (ja) 2018-06-14 2019-06-12 リモートプラズマ源用のラジカル出力モニタ及びその使用方法

Country Status (8)

Country Link
US (1) US11114287B2 (enExample)
EP (1) EP3785494B8 (enExample)
JP (1) JP7301075B2 (enExample)
KR (1) KR102697703B1 (enExample)
CN (1) CN112335342B (enExample)
SG (1) SG11202011069RA (enExample)
TW (1) TWI809122B (enExample)
WO (1) WO2019241405A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL3648554T3 (pl) 2017-06-27 2021-11-22 Canon Anelva Corporation Urządzenie do przetwarzania plazmowego
CN114666965B (zh) 2017-06-27 2025-08-01 佳能安内华股份有限公司 等离子体处理装置
EP4017223B1 (en) 2017-06-27 2025-10-15 Canon Anelva Corporation Plasma processing apparatus
EP3648550B1 (en) 2017-06-27 2021-06-02 Canon Anelva Corporation Plasma treatment device
PL3817517T3 (pl) * 2018-06-26 2024-10-28 Canon Anelva Corporation Urządzenie do obróbki plazmą, sposób obróbki plazmą, program oraz nośnik pamięci
CN115900990A (zh) * 2023-01-03 2023-04-04 大连理工大学 用于七通道级联弧等离子体源的温度监测系统
CN120264567B (zh) * 2025-04-29 2026-04-21 江苏神州半导体科技股份有限公司 一种远程等离子发生器
CN120870230A (zh) * 2025-09-24 2025-10-31 江苏神州半导体科技有限公司 一种远程等离子体源解离率监测装置及监测方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011086564A (ja) 2009-10-19 2011-04-28 Ulvac Japan Ltd 分析装置
JP2012094399A (ja) 2010-10-27 2012-05-17 Ulvac Japan Ltd ラジカル測定装置及びラジカル測定管
US20160307739A1 (en) 2015-04-14 2016-10-20 Dandan Co., Ltd. Remote plasma generator using ceramic

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918031A (en) 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
US5429070A (en) 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
WO1991010341A1 (en) 1990-01-04 1991-07-11 Savas Stephen E A low frequency inductive rf plasma reactor
US6024826A (en) * 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
KR100255703B1 (ko) 1991-06-27 2000-05-01 조셉 제이. 스위니 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법
US5349154A (en) 1991-10-16 1994-09-20 Rockwell International Corporation Diamond growth by microwave generated plasma flame
JPH07254496A (ja) 1994-03-17 1995-10-03 Fuji Electric Co Ltd 誘導プラズマの発生装置
US5587207A (en) 1994-11-14 1996-12-24 Gorokhovsky; Vladimir I. Arc assisted CVD coating and sintering method
US5478608A (en) 1994-11-14 1995-12-26 Gorokhovsky; Vladimir I. Arc assisted CVD coating method and apparatus
JPH0955372A (ja) 1995-08-11 1997-02-25 Nippon Steel Corp プラズマ処理装置
JPH10134996A (ja) 1996-10-31 1998-05-22 Nec Corp プラズマ処理装置
JP3598717B2 (ja) 1997-03-19 2004-12-08 株式会社日立製作所 プラズマ処理装置
JP2868120B2 (ja) 1997-06-11 1999-03-10 川崎重工業株式会社 電子ビーム励起プラズマ発生装置
US6150628A (en) 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6388226B1 (en) 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US6815633B1 (en) * 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US5937541A (en) * 1997-09-15 1999-08-17 Siemens Aktiengesellschaft Semiconductor wafer temperature measurement and control thereof using gas temperature measurement
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6450116B1 (en) * 1999-04-22 2002-09-17 Applied Materials, Inc. Apparatus for exposing a substrate to plasma radicals
KR20020029743A (ko) 1999-08-06 2002-04-19 로버트 엠. 포터 가스와 재료를 처리하기 위한 유도결합 링-플라즈마소스장치 및 그의 방법
JP2001274148A (ja) * 2000-03-24 2001-10-05 Tokyo Electron Ltd プラズマ処理装置及び方法
US6679981B1 (en) 2000-05-11 2004-01-20 Applied Materials, Inc. Inductive plasma loop enhancing magnetron sputtering
EP1156511A1 (en) * 2000-05-19 2001-11-21 Applied Materials, Inc. Remote plasma CVD apparatus
US6418874B1 (en) 2000-05-25 2002-07-16 Applied Materials, Inc. Toroidal plasma source for plasma processing
EP1162646A3 (en) 2000-06-06 2004-10-13 Matsushita Electric Works, Ltd. Plasma treatment apparatus and method
RU2209532C2 (ru) 2001-10-10 2003-07-27 Сорокин Игорь Борисович Плазменный ускоритель с замкнутым дрейфом электронов
US6855906B2 (en) 2001-10-16 2005-02-15 Adam Alexander Brailove Induction plasma reactor
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US20030164143A1 (en) 2002-01-10 2003-09-04 Hitachi Kokusai Electric Inc. Batch-type remote plasma processing apparatus
JP2004047192A (ja) 2002-07-10 2004-02-12 Adtec Plasma Technology Co Ltd 透磁コアによるトランス放電型プラズマ発生装置
NO20024248D0 (no) 2002-09-05 2002-09-05 Seppo Konkola Metode og utstyr for aksellererende strömmende plasma gasskombinasjoner
JP4472372B2 (ja) 2003-02-03 2010-06-02 株式会社オクテック プラズマ処理装置及びプラズマ処理装置用の電極板
KR100520979B1 (ko) 2003-03-07 2005-10-12 위순임 원격 플라즈마 발생기를 이용한 진공 프로세스 챔버
US8053700B2 (en) 2003-04-16 2011-11-08 Mks Instruments, Inc. Applicators and cooling systems for a plasma device
US6872909B2 (en) 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
US8409400B2 (en) 2003-05-07 2013-04-02 Gen Co., Ltd. Inductive plasma chamber having multi discharge tube bridge
US6902646B2 (en) 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US7268084B2 (en) 2004-09-30 2007-09-11 Tokyo Electron Limited Method for treating a substrate
US7396431B2 (en) 2004-09-30 2008-07-08 Tokyo Electron Limited Plasma processing system for treating a substrate
GB2442990A (en) 2004-10-04 2008-04-23 C Tech Innovation Ltd Microwave plasma apparatus
US20060118240A1 (en) 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
WO2006083415A2 (en) 2004-12-20 2006-08-10 Purser Kenneth H Improving beam neutralization in low-energy high-current ribbon-beam implanters
KR100720989B1 (ko) 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 멀티 챔버 플라즈마 프로세스 시스템
US7550381B2 (en) 2005-07-18 2009-06-23 Applied Materials, Inc. Contact clean by remote plasma and repair of silicide surface
KR101019293B1 (ko) 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
KR100799175B1 (ko) 2006-04-21 2008-02-01 주식회사 뉴파워 프라즈마 플라즈마 프로세싱 시스템 및 그 제어 방법
JP5257917B2 (ja) 2006-04-24 2013-08-07 株式会社ニューパワープラズマ 多重マグネチックコアが結合された誘導結合プラズマ反応器
CN101466445A (zh) * 2006-06-12 2009-06-24 山米奎普公司 到处于真空状态下的装置的蒸气传送
US7837826B2 (en) 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
US9275839B2 (en) 2007-10-19 2016-03-01 Mks Instruments, Inc. Toroidal plasma chamber for high gas flow rate process
JP5423205B2 (ja) * 2008-08-29 2014-02-19 東京エレクトロン株式会社 成膜装置
KR101541576B1 (ko) 2009-02-04 2015-08-03 제너럴 퓨전 아이엔씨. 플라스마를 압축하기 위한 시스템 및 방법
WO2011024174A1 (en) 2009-08-27 2011-03-03 Mosaic Crystals Ltd. Penetrating plasma generating apparatus for high vacuum chambers
US9190289B2 (en) * 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US8723423B2 (en) 2011-01-25 2014-05-13 Advanced Energy Industries, Inc. Electrostatic remote plasma source
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US9035553B2 (en) 2011-11-09 2015-05-19 Dae-Kyu Choi Hybrid plasma reactor
US20130118589A1 (en) 2011-11-15 2013-05-16 Mks Instruments, Inc. Toroidal Plasma Channel with Varying Cross-Section Areas Along the Channel
WO2014007472A1 (en) 2012-07-03 2014-01-09 Plasmart Inc. Plasma generation apparatus and plasma generation method
US10316409B2 (en) * 2012-12-21 2019-06-11 Novellus Systems, Inc. Radical source design for remote plasma atomic layer deposition
US9653266B2 (en) * 2014-03-27 2017-05-16 Mks Instruments, Inc. Microwave plasma applicator with improved power uniformity
KR20220020409A (ko) 2014-09-12 2022-02-18 어플라이드 머티어리얼스, 인코포레이티드 반도체 프로세싱 장비 유출물의 처리를 위한 제어기
KR102465522B1 (ko) 2015-03-11 2022-11-09 제너럴 퓨전 아이엔씨. 모듈식 압축기 챔버
KR102125028B1 (ko) * 2015-04-30 2020-06-19 (주) 엔피홀딩스 마그네틱 코어 냉각용 냉각키트 및 이를 구비한 플라즈마 반응기
JP6924775B2 (ja) * 2016-04-26 2021-08-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 排気堆積物の除去のための温度制御された遠隔プラズマ洗浄
US11837479B2 (en) * 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US20190006154A1 (en) 2017-06-28 2019-01-03 Chaolin Hu Toroidal Plasma Chamber
US10329976B2 (en) * 2017-08-11 2019-06-25 Gm Global Technology Operations Llc. Non-thermal plasma/ozone-assisted catalytic system and use in exhaust systems

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011086564A (ja) 2009-10-19 2011-04-28 Ulvac Japan Ltd 分析装置
JP2012094399A (ja) 2010-10-27 2012-05-17 Ulvac Japan Ltd ラジカル測定装置及びラジカル測定管
US20160307739A1 (en) 2015-04-14 2016-10-20 Dandan Co., Ltd. Remote plasma generator using ceramic

Also Published As

Publication number Publication date
TW202017074A (zh) 2020-05-01
EP3785494A4 (en) 2022-01-26
KR20210009428A (ko) 2021-01-26
US11114287B2 (en) 2021-09-07
US20190385829A1 (en) 2019-12-19
EP3785494B1 (en) 2026-02-18
EP3785494A1 (en) 2021-03-03
KR102697703B1 (ko) 2024-08-23
CN112335342A (zh) 2021-02-05
TWI809122B (zh) 2023-07-21
WO2019241405A1 (en) 2019-12-19
EP3785494B8 (en) 2026-04-01
SG11202011069RA (en) 2020-12-30
JP2021530076A (ja) 2021-11-04
CN112335342B (zh) 2023-07-14

Similar Documents

Publication Publication Date Title
JP7301075B2 (ja) リモートプラズマ源用のラジカル出力モニタ及びその使用方法
CN103282748B9 (zh) 气体供应装置用流量控制器的流量测定方法
Van der Meer Stagnation point heat transfer from turbulent low Reynolds number jets and flame jets
WO2012014375A1 (ja) ガス供給装置用流量制御器の校正方法及び流量計測方法
CN108496064B (zh) 能够测定流量的气体供给装置、流量计以及流量测定方法
KR102771310B1 (ko) 압력 제어 장치
Brancher et al. Measurements of pressure gradient and temperature gradient driven flows in a rectangular channel
JP5554518B2 (ja) 基板の温度を決定する方法および装置
JP7530961B2 (ja) 流量制限器用のシール
Neiswanger et al. An experimental study of high Rayleigh number mixed convection in a rectangular enclosure with restricted inlet and outlet openings
Agricola et al. Impinging sweeping jet heat transfer
Arpino et al. Design of a calibration system for heat flux meters
US6868723B2 (en) Thermal anemometry mass flow measurement apparatus and method
Grosshandler et al. Development of a high flux conduction calibration apparatus
US20250293069A1 (en) Modeling substrate temperatures
Jin et al. Characteristics of R-123 two-phase flow through micro-scale short tube orifice for design of a small cooling system
CN110571118A (zh) 流量阈值的确定方法、控制装置及半导体加工设备
CN120369058A (zh) 气体流量检测装置及半导体设备
CN121680486A (zh) 质量流量控制器
US10466189B2 (en) Uniform chilling calorimeter system
Vittoriosi et al. Integrated temperature microsensors for the characterization of gas heat transfer
Brandner et al. Integrated temperature microsensors for the characterization of gas heat transfer
Pope et al. Slowflows: Progress Towards a Novel Flow Standard for Semiconductor Process Gases

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220610

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220610

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220615

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230214

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230512

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230606

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230620

R150 Certificate of patent or registration of utility model

Ref document number: 7301075

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150