JP7261675B2 - 加熱処理装置及び加熱処理方法 - Google Patents

加熱処理装置及び加熱処理方法 Download PDF

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Publication number
JP7261675B2
JP7261675B2 JP2019122961A JP2019122961A JP7261675B2 JP 7261675 B2 JP7261675 B2 JP 7261675B2 JP 2019122961 A JP2019122961 A JP 2019122961A JP 2019122961 A JP2019122961 A JP 2019122961A JP 7261675 B2 JP7261675 B2 JP 7261675B2
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Japan
Prior art keywords
collection container
heat treatment
suction
treatment apparatus
container
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JP2019122961A
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English (en)
Japanese (ja)
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JP2021009923A (ja
JP2021009923A5 (https=
Inventor
慎介 ▲高▼木
恭弘 久我
幸信 大塚
慎一 相良
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2019122961A priority Critical patent/JP7261675B2/ja
Priority to TW109120305A priority patent/TWI842910B/zh
Priority to US16/904,802 priority patent/US11393702B2/en
Priority to CN202010592474.5A priority patent/CN112185847B/zh
Priority to KR1020200076940A priority patent/KR102809463B1/ko
Priority to CN202021198864.6U priority patent/CN213042875U/zh
Publication of JP2021009923A publication Critical patent/JP2021009923A/ja
Publication of JP2021009923A5 publication Critical patent/JP2021009923A5/ja
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Publication of JP7261675B2 publication Critical patent/JP7261675B2/ja
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D3/00—Charging; Discharging; Manipulation of charge
    • F27D3/0084—Charging; Manipulation of SC or SC wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
    • B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
    • B01D45/08—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by impingement against baffle separators
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2019122961A 2019-07-01 2019-07-01 加熱処理装置及び加熱処理方法 Active JP7261675B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2019122961A JP7261675B2 (ja) 2019-07-01 2019-07-01 加熱処理装置及び加熱処理方法
TW109120305A TWI842910B (zh) 2019-07-01 2020-06-17 加熱處理裝置及加熱處理方法
US16/904,802 US11393702B2 (en) 2019-07-01 2020-06-18 Heat treatment apparatus and heat treatment method
KR1020200076940A KR102809463B1 (ko) 2019-07-01 2020-06-24 가열 처리 장치 및 가열 처리 방법
CN202010592474.5A CN112185847B (zh) 2019-07-01 2020-06-24 加热处理装置以及加热处理方法
CN202021198864.6U CN213042875U (zh) 2019-07-01 2020-06-24 加热处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019122961A JP7261675B2 (ja) 2019-07-01 2019-07-01 加熱処理装置及び加熱処理方法

Publications (3)

Publication Number Publication Date
JP2021009923A JP2021009923A (ja) 2021-01-28
JP2021009923A5 JP2021009923A5 (https=) 2022-05-20
JP7261675B2 true JP7261675B2 (ja) 2023-04-20

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JP2019122961A Active JP7261675B2 (ja) 2019-07-01 2019-07-01 加熱処理装置及び加熱処理方法

Country Status (5)

Country Link
US (1) US11393702B2 (https=)
JP (1) JP7261675B2 (https=)
KR (1) KR102809463B1 (https=)
CN (2) CN112185847B (https=)
TW (1) TWI842910B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7261675B2 (ja) * 2019-07-01 2023-04-20 東京エレクトロン株式会社 加熱処理装置及び加熱処理方法
JP7441665B2 (ja) * 2020-02-10 2024-03-01 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
TW202324499A (zh) 2021-11-05 2023-06-16 日商東京威力科創股份有限公司 加熱處理裝置、加熱處理方法及電腦記憶媒體
JP7795962B2 (ja) * 2022-04-26 2026-01-08 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及びコンピュータ記憶媒体
JP2023167845A (ja) 2022-05-13 2023-11-24 東京エレクトロン株式会社 加熱処理装置、加熱処理方法及びコンピュータ記憶媒体
JP2023177658A (ja) * 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
CN115394636B (zh) * 2022-10-26 2023-01-03 广州粤芯半导体技术有限公司 半导体光刻方法、系统、设备和计算机可读存储介质
JP7764356B2 (ja) * 2022-12-21 2025-11-05 日本碍子株式会社 プラグ、プラグ製造方法及び半導体製造装置用部材
KR102765522B1 (ko) * 2022-12-22 2025-02-12 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102828824B1 (ko) * 2024-05-09 2025-07-04 엠투에스 주식회사 오븐 유닛을 구비한 코팅 액 도포 시스템

Citations (4)

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JP2003347198A (ja) 2002-05-28 2003-12-05 Tokyo Electron Ltd 基板ベーク装置、基板ベーク方法及び塗布膜形成装置
JP2007300047A (ja) 2006-05-08 2007-11-15 Tokyo Electron Ltd 熱処理方法，プログラム及び熱処理装置
JP2008177494A (ja) 2007-01-22 2008-07-31 Tokyo Electron Ltd 加熱装置、加熱方法及び記憶媒体
JP2010232415A (ja) 2009-03-27 2010-10-14 Tokyo Electron Ltd 基板熱処理装置

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JP4519087B2 (ja) * 2006-03-02 2010-08-04 東京エレクトロン株式会社 熱処理装置
JP4737083B2 (ja) * 2006-12-28 2011-07-27 東京エレクトロン株式会社 加熱装置及び塗布、現像装置並びに加熱方法
JP5066981B2 (ja) * 2007-03-30 2012-11-07 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
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JP2003347198A (ja) 2002-05-28 2003-12-05 Tokyo Electron Ltd 基板ベーク装置、基板ベーク方法及び塗布膜形成装置
JP2007300047A (ja) 2006-05-08 2007-11-15 Tokyo Electron Ltd 熱処理方法，プログラム及び熱処理装置
JP2008177494A (ja) 2007-01-22 2008-07-31 Tokyo Electron Ltd 加熱装置、加熱方法及び記憶媒体
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Also Published As

Publication number Publication date
TWI842910B (zh) 2024-05-21
CN112185847B (zh) 2025-07-25
KR102809463B1 (ko) 2025-05-19
TW202119524A (zh) 2021-05-16
KR20210003048A (ko) 2021-01-11
CN112185847A (zh) 2021-01-05
JP2021009923A (ja) 2021-01-28
US20210005468A1 (en) 2021-01-07
US11393702B2 (en) 2022-07-19
CN213042875U (zh) 2021-04-23

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