JP7209058B2 - 有機発光ダイオードの封止方法 - Google Patents
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- JP7209058B2 JP7209058B2 JP2021137341A JP2021137341A JP7209058B2 JP 7209058 B2 JP7209058 B2 JP 7209058B2 JP 2021137341 A JP2021137341 A JP 2021137341A JP 2021137341 A JP2021137341 A JP 2021137341A JP 7209058 B2 JP7209058 B2 JP 7209058B2
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- 238000000034 method Methods 0.000 title claims description 74
- 238000005538 encapsulation Methods 0.000 title description 18
- 239000010410 layer Substances 0.000 claims description 132
- 239000000758 substrate Substances 0.000 claims description 85
- 230000008569 process Effects 0.000 claims description 48
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000012044 organic layer Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 22
- 230000008021 deposition Effects 0.000 description 20
- 238000003860 storage Methods 0.000 description 13
- 230000032258 transport Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
本願は、2016年11月6日に出願した米国仮出願第62/418,175号の優先権を主張し、その開示のすべてが言及によって本明細書に援用される。
本願の実施形態は、有機発光ダイオード(organic light emitting diode)の封止方法及び装置に関する。また、本願の実施形態は、OLEDディスプレイ及びタッチスクリーンの製造方法及び装置にも関する。
有機発光ディスプレイ(Organic lightemitting displays、OLED)は、そのより低い消費電力、より軽い重量、広色域、より大きい視野角、より速い反応時間、より高いコントラストのため勢いを増しており、また程度の差はあるが、従来の液晶ディスプレイ(liquid crystal displays、LCD)と比較して可撓性を可能にしている。しかしながら、OLED構造は、ディスプレイの性能を大きく下げる湿気や酸素の取り込みの影響を受けやすい。OLED構造を保護するため、交互の無機薄膜層と有機薄膜層とを含む、封止を行うことが必要である。
Claims (5)
- コンタクト層を有するとともに基板上に形成されたOLED構造上にコーティングを形成する方法であって、
第1マスクを前記基板上にアライメントして、前記第1マスクによって前記OLED構造及び前記コンタクト層の少なくとも一部上に第1無機層を形成するステップと、
第2マスクを前記基板上にアライメントして、前記第2マスクによって前記第1無機層上にバッファ層を形成するステップと、
第3マスクを前記基板上にアライメントして、前記第3マスクによって前記バッファ層上に第2無機層を形成するステップと、を含み、
前記第2マスクは、前記第1マスクよりも小さい開口部を有し、
前記バッファ層を形成することは、O2及びテトラメチルジシロキサン(TMDSO)ガスをプラズマチャンバに流すことを含み、かつ、前記バッファ層を形成することは、
第1期間においてテトラメチルジシロキサン(TMDSO)ガスに対するO2の流量比を8以上になるように調節して第1インターフェイス層を形成すること、
前記第1期間に続く第2期間においてテトラメチルジシロキサン(TMDSO)ガスに対するO2の流量比を2以下になるように調節して有機層を形成すること、
前記第2期間に続く第3期間においてテトラメチルジシロキサン(TMDSO)ガスに対するO2の流量比を前記第1期間と同様に再び8以上になるように調節して第2インターフェイス層を形成すること、
を含む、方法。 - 前記第3マスクは前記第1マスクと同じサイズの開口部を有する、請求項1に記載の方法。
- 前記第3マスクは前記第1マスクよりも大きい開口部を有する、請求項1に記載の方法。
- 前記第1マスク、前記第2マスク、及び前記第3マスクをアライメントすることは、プロセスチャンバの外部だが真空内で行われる、請求項1に記載の方法。
- 前記第1マスク、前記第2マスク、及び前記第3マスクの少なくとも1つを空のプロセスチャンバ内に保持し、プラズマを前記プロセスチャンバ内部で着火して前記第1マスク、前記第2マスク、及び前記第3マスクの少なくとも1つをクリーニングすることをさらに含む、請求項1に記載の方法。
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JP2022126204A JP2022145802A (ja) | 2016-11-06 | 2022-08-08 | 有機発光ダイオードの封止方法 |
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US201662418175P | 2016-11-06 | 2016-11-06 | |
US62/418,175 | 2016-11-06 | ||
JP2019523015A JP2019534538A (ja) | 2016-11-06 | 2017-11-03 | 有機発光ダイオードの封止方法及び装置 |
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JP2021182563A JP2021182563A (ja) | 2021-11-25 |
JP7209058B2 true JP7209058B2 (ja) | 2023-01-19 |
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JP2021137341A Active JP7209058B2 (ja) | 2016-11-06 | 2021-08-25 | 有機発光ダイオードの封止方法 |
JP2022126204A Pending JP2022145802A (ja) | 2016-11-06 | 2022-08-08 | 有機発光ダイオードの封止方法 |
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US (1) | US10333104B2 (ja) |
JP (3) | JP2019534538A (ja) |
KR (1) | KR102454027B1 (ja) |
CN (1) | CN110268504A (ja) |
WO (1) | WO2018085715A2 (ja) |
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KR20200119454A (ko) * | 2019-04-09 | 2020-10-20 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
WO2020251696A1 (en) * | 2019-06-10 | 2020-12-17 | Applied Materials, Inc. | Processing system for forming layers |
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- 2017-11-03 JP JP2019523015A patent/JP2019534538A/ja active Pending
- 2017-11-03 CN CN201780068134.9A patent/CN110268504A/zh active Pending
- 2017-11-03 WO PCT/US2017/060037 patent/WO2018085715A2/en active Application Filing
- 2017-11-03 KR KR1020197015971A patent/KR102454027B1/ko active IP Right Grant
- 2017-11-03 US US15/803,558 patent/US10333104B2/en active Active
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2021
- 2021-08-25 JP JP2021137341A patent/JP7209058B2/ja active Active
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Publication number | Publication date |
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US10333104B2 (en) | 2019-06-25 |
JP2019534538A (ja) | 2019-11-28 |
KR102454027B1 (ko) | 2022-10-14 |
WO2018085715A2 (en) | 2018-05-11 |
JP2022145802A (ja) | 2022-10-04 |
CN110268504A (zh) | 2019-09-20 |
WO2018085715A3 (en) | 2019-06-13 |
KR20190098961A (ko) | 2019-08-23 |
US20180130975A1 (en) | 2018-05-10 |
JP2021182563A (ja) | 2021-11-25 |
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