JP7181805B2 - 半導体素子の過渡熱抵抗測定用電源回路 - Google Patents
半導体素子の過渡熱抵抗測定用電源回路 Download PDFInfo
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- JP7181805B2 JP7181805B2 JP2019022601A JP2019022601A JP7181805B2 JP 7181805 B2 JP7181805 B2 JP 7181805B2 JP 2019022601 A JP2019022601 A JP 2019022601A JP 2019022601 A JP2019022601 A JP 2019022601A JP 7181805 B2 JP7181805 B2 JP 7181805B2
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/539—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
- H02M7/5395—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Inverter Devices (AREA)
Description
前記制御回路は、前記パルス電流の立ち上がり時の第1PWM周波数を、前記パルス電流をオンしてから所定時間t1経過後の第2PWM周波数よりも高く設定して前記被測定対象半導体素子の過渡熱抵抗を測定可能とすることを特徴とする。
={t(Tx)-t(T1)}/{I×Von}
P:被測定対象半導体素子の損失
I:被測定対象半導体素子の通電電流
Von:通電電流での半導体素子のオン電圧
Tx:経過時間(通電時間)
なお、出力電流Ioが定電流制御されることで、半導体素子1には負荷抵抗を接続しなくても良い。
1)パルス出力電流幅(1000S)全体を第1PWM周波数100kHzに固定
2)パルス出力電流幅(1000S)全体を第2PWM周波数25kHzに固定
3)パルス出力電流の立ち上がり時を第1PWM周波数100kHzで、5ms後から第2PWM周波数25kHzに設定
の3つの変化を示している。
f2-第2PWM周波数
Claims (1)
- 変圧器の一次側に設けられPWM信号で制御されるインバータ回路と、前記変圧器の二次側に設けられ直流リアクトルを含む整流回路と、前記整流回路から被測定対象半導体素子にパルス電流を出力するように前記PWM信号を制御する制御回路とを備え、
前記制御回路は、前記パルス電流の立ち上がり時の第1PWM周波数を、前記パルス電流をオンしてから所定時間t1経過後の第2PWM周波数よりも高く設定して前記被測定対象半導体素子の過渡熱抵抗を測定可能とすることを特徴とする半導体素子の過渡熱抵抗測定用電源回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2019022601A JP7181805B2 (ja) | 2019-02-12 | 2019-02-12 | 半導体素子の過渡熱抵抗測定用電源回路 |
US16/739,289 US11532998B2 (en) | 2019-02-12 | 2020-01-10 | Power supply circuit for measuring transient thermal resistances of semiconductor device |
Applications Claiming Priority (1)
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JP2019022601A JP7181805B2 (ja) | 2019-02-12 | 2019-02-12 | 半導体素子の過渡熱抵抗測定用電源回路 |
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JP2020129947A JP2020129947A (ja) | 2020-08-27 |
JP7181805B2 true JP7181805B2 (ja) | 2022-12-01 |
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JP2019022601A Active JP7181805B2 (ja) | 2019-02-12 | 2019-02-12 | 半導体素子の過渡熱抵抗測定用電源回路 |
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JP (1) | JP7181805B2 (ja) |
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WO2022025033A1 (ja) | 2020-07-31 | 2022-02-03 | 東ソー株式会社 | Cr-Si-C系焼結体 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010049523A (ja) | 2008-08-22 | 2010-03-04 | Mitsubishi Electric Corp | 定電流スイッチング電源装置及びその駆動方法、光源駆動装置及びその駆動方法、並びに画像表示装置 |
JP2016149867A (ja) | 2015-02-12 | 2016-08-18 | 富士通株式会社 | 共振型スイッチング電源、その制御方法及びそのプログラム |
US20160301303A1 (en) | 2015-04-07 | 2016-10-13 | Virginia Tech Intellectual Properties, Inc. | Inverse Charge Current Mode (IQCM) Control for Power Converter |
Family Cites Families (10)
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JP2001275393A (ja) * | 2000-03-28 | 2001-10-05 | Meidensha Corp | 静止形インバータ装置 |
JP2002228704A (ja) * | 2001-02-06 | 2002-08-14 | Fujitsu Ltd | 半導体チップの温度制御方法 |
US7834651B2 (en) * | 2008-01-16 | 2010-11-16 | Advantest Corporation | Power supply circuit |
US7973543B2 (en) * | 2008-07-11 | 2011-07-05 | Advantest Corporation | Measurement apparatus, test apparatus and measurement method |
JP5742642B2 (ja) | 2011-10-06 | 2015-07-01 | 三菱電機株式会社 | 半導体素子の接合温度の推定方法、推定システムおよび推定プログラム |
JP6584744B2 (ja) * | 2014-03-13 | 2019-10-02 | 株式会社三社電機製作所 | 溶接機用電源装置 |
JP6337809B2 (ja) * | 2015-03-11 | 2018-06-06 | 株式会社デンソー | 駆動制御装置 |
US10086463B2 (en) * | 2015-06-18 | 2018-10-02 | Sansha Electric Manufacturing Co., Ltd. | Arc welding apparatus |
JP2017184404A (ja) * | 2016-03-29 | 2017-10-05 | 株式会社オートネットワーク技術研究所 | 電圧変換装置及び電圧変換方法 |
JP7106799B2 (ja) * | 2018-06-15 | 2022-07-27 | 株式会社ダイヘン | 溶接電源装置 |
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- 2019-02-12 JP JP2019022601A patent/JP7181805B2/ja active Active
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- 2020-01-10 US US16/739,289 patent/US11532998B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010049523A (ja) | 2008-08-22 | 2010-03-04 | Mitsubishi Electric Corp | 定電流スイッチング電源装置及びその駆動方法、光源駆動装置及びその駆動方法、並びに画像表示装置 |
JP2016149867A (ja) | 2015-02-12 | 2016-08-18 | 富士通株式会社 | 共振型スイッチング電源、その制御方法及びそのプログラム |
US20160301303A1 (en) | 2015-04-07 | 2016-10-13 | Virginia Tech Intellectual Properties, Inc. | Inverse Charge Current Mode (IQCM) Control for Power Converter |
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JP2020129947A (ja) | 2020-08-27 |
US11532998B2 (en) | 2022-12-20 |
US20200259424A1 (en) | 2020-08-13 |
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