JP7155388B2 - ニッケルシリサイド材料を生成する方法 - Google Patents
ニッケルシリサイド材料を生成する方法 Download PDFInfo
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- JP7155388B2 JP7155388B2 JP2021500998A JP2021500998A JP7155388B2 JP 7155388 B2 JP7155388 B2 JP 7155388B2 JP 2021500998 A JP2021500998 A JP 2021500998A JP 2021500998 A JP2021500998 A JP 2021500998A JP 7155388 B2 JP7155388 B2 JP 7155388B2
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- nickel silicide
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- seed layer
- temperature
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- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 title claims description 210
- 229910021334 nickel silicide Inorganic materials 0.000 title claims description 175
- 239000000463 material Substances 0.000 title claims description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 181
- 238000000034 method Methods 0.000 claims description 99
- 238000012545 processing Methods 0.000 claims description 73
- 238000000151 deposition Methods 0.000 claims description 62
- 238000005240 physical vapour deposition Methods 0.000 claims description 52
- 230000008569 process Effects 0.000 claims description 49
- 238000000137 annealing Methods 0.000 claims description 29
- 238000012546 transfer Methods 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 description 31
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 25
- 239000010949 copper Substances 0.000 description 22
- 238000009826 distribution Methods 0.000 description 20
- 239000007789 gas Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 230000015654 memory Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 238000011049 filling Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003032 molecular docking Methods 0.000 description 2
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XQMVBICWFFHDNN-UHFFFAOYSA-N 5-amino-4-chloro-2-phenylpyridazin-3-one;(2-ethoxy-3,3-dimethyl-2h-1-benzofuran-5-yl) methanesulfonate Chemical compound O=C1C(Cl)=C(N)C=NN1C1=CC=CC=C1.C1=C(OS(C)(=O)=O)C=C2C(C)(C)C(OCC)OC2=C1 XQMVBICWFFHDNN-UHFFFAOYSA-N 0.000 description 1
- 208000000659 Autoimmune lymphoproliferative syndrome Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229940082150 encore Drugs 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
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Description
Claims (15)
- 基板上にニッケルシリサイド材料を生成するための方法であって、
摂氏約15度から摂氏約27度の温度で基板の上に第1のニッケルシリサイドシード層を堆積させること、
摂氏350度を超える温度で前記第1のニッケルシリサイドシード層をアニーリングすること、及び
前記第1のニッケルシリサイドシード層をアニーリングした後に、摂氏約15度から摂氏約27度の温度で前記第1のニッケルシリサイドシード層の上に第2のニッケルシリサイド層を堆積させて、前記ニッケルシリサイド材料を生成することを含む、方法。 - 前記ニッケルシリサイド材料をアニーリングすることを更に含む、請求項1に記載の方法。
- 前記第2のニッケルシリサイド層の上に窒化チタン(TiN)キャッピング層を堆積させることを更に含む、請求項1又は2に記載の方法。
- 前記第1のニッケルシリサイドシード層を堆積させるための前記温度が、摂氏約20度から摂氏約25度である、請求項1から3のいずれか一項に記載の方法。
- 前記第2のニッケルシリサイド層を堆積させるための前記温度が、摂氏約20度から摂氏約25度である、請求項1から4のいずれか一項に記載の方法。
- 前記第1のニッケルシリサイドシード層が、約20オングストロームから60オングストロームの厚さを有する、請求項1から5のいずれか一項に記載の方法。
- 前記第2のニッケルシリサイド層が、約50オングストロームから200オングストロームの厚さを有する、請求項1から6のいずれか一項に記載の方法。
- 前記第1のニッケルシリサイドシード層及び前記第2のニッケルシリサイド層は、物理的気相堆積プロセス中に前記基板をニッケルシリサイドに曝露することによって堆積される、請求項1から7のいずれか一項に記載の方法。
- 前記第1のニッケルシリサイドシード層及び前記第2のニッケルシリサイド層は、ニッケル及びケイ素のターゲットを含む物理的気相堆積プロセスを使用して形成され、前記ニッケル及びケイ素のターゲットは、約1:1のニッケルとケイ素との比率を有する、請求項1から8のいずれか一項に記載の方法。
- 前記ニッケルシリサイド材料は、スクエア当たり約20から50オームの量のシート抵抗を有する、請求項1から9のいずれか一項に記載の方法。
- 前記第1のニッケルシリサイドシード層をアニーリングすることが、摂氏約355度から摂氏450度の温度で行われる、請求項1から10のいずれか一項に記載の方法。
- 請求項1に記載の方法を実施するための基板処理システムであって、
摂氏約15度から摂氏約27度の温度で基板上に第1のニッケルシリサイドシード層を物理的気相堆積させ、摂氏約15度から摂氏約27度の温度で前記第1のニッケルシリサイドシード層の上に第2のニッケルシリサイド層を物理的気相堆積させて、ニッケルシリサイド材料を生成するように構成された物理的気相堆積チャンバ、及び
摂氏350度を超える温度で前記第1のニッケルシリサイドシード層をアニーリングするように構成された熱処理チャンバを備える、基板処理システム。 - 前記物理的気相堆積チャンバが結合された減圧基板移送チャンバ、及び
前記減圧基板移送チャンバに結合された熱処理チャンバを更に備え、前記基板処理システムは、前記物理的気相堆積チャンバから前記熱処理チャンバに、減圧下で基板を移動させるように構成されている、請求項12に記載の基板処理システム。 - ニッケルシリサイド材料の抵抗率を低減させる方法であって、
a)摂氏約15度から摂氏約27度の温度で基板の上にニッケルシリサイド層を堆積させること、
b)摂氏350度を超える温度で前記ニッケルシリサイド層をアニーリングすること、並びに
c)前記ニッケルシリサイド材料が所定の厚さを有するまで、a)及びb)を繰り返すことを含む、方法。 - 指示命令であって、実行されたときに、統合システムに請求項1に記載の方法又は請求項14に記載の方法を実行させる指示命令を記憶している、コンピュータ可読媒体。
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US16/511,627 US11965236B2 (en) | 2018-07-17 | 2019-07-15 | Method of forming nickel silicide materials |
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