JP7149616B2 - 変調画像取り込みのためのシステム及び方法 - Google Patents

変調画像取り込みのためのシステム及び方法 Download PDF

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JP7149616B2
JP7149616B2 JP2019571796A JP2019571796A JP7149616B2 JP 7149616 B2 JP7149616 B2 JP 7149616B2 JP 2019571796 A JP2019571796 A JP 2019571796A JP 2019571796 A JP2019571796 A JP 2019571796A JP 7149616 B2 JP7149616 B2 JP 7149616B2
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charge collection
modulation
voltage
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JP2020515085A5 (https=
JPWO2018172610A5 (https=
JP2020515085A (ja
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ポイコネン、ヨンネ
パーシオ、アリ
ライホ、ミカ
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Kovilta Oy
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Kovilta Oy
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
JP2019571796A 2017-03-19 2018-03-16 変調画像取り込みのためのシステム及び方法 Active JP7149616B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20170044 2017-03-19
FI20170044 2017-03-19
PCT/FI2018/050195 WO2018172610A1 (en) 2017-03-19 2018-03-16 Systems and methods for modulated image capture

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JP2020515085A JP2020515085A (ja) 2020-05-21
JP2020515085A5 JP2020515085A5 (https=) 2022-04-22
JPWO2018172610A5 JPWO2018172610A5 (https=) 2022-04-22
JP7149616B2 true JP7149616B2 (ja) 2022-10-07

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US (1) US11411027B2 (https=)
EP (1) EP3602109B1 (https=)
JP (1) JP7149616B2 (https=)
KR (1) KR102484157B1 (https=)
CN (1) CN110431441B (https=)
SG (1) SG11201906657QA (https=)
WO (1) WO2018172610A1 (https=)

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JP2019027843A (ja) * 2017-07-27 2019-02-21 セイコーエプソン株式会社 回路装置、物理量測定装置、電子機器及び移動体
JP2022002229A (ja) * 2018-09-05 2022-01-06 ソニーセミコンダクタソリューションズ株式会社 撮像装置、および撮像素子
JP6641442B1 (ja) * 2018-10-16 2020-02-05 浜松ホトニクス株式会社 光検出素子及び光検出装置
KR102704197B1 (ko) * 2019-12-12 2024-09-09 에스케이하이닉스 주식회사 이미지 센싱 장치
US20210257396A1 (en) * 2020-02-19 2021-08-19 Pointcloud Inc. Backside illumination architectures for integrated photonic lidar
CN111341797B (zh) * 2020-03-09 2022-10-28 宁波飞芯电子科技有限公司 光电转换元件及图像传感器
KR102883963B1 (ko) * 2021-01-12 2025-11-10 에스케이하이닉스 주식회사 이미지 센싱 장치
JP7566677B2 (ja) 2021-03-23 2024-10-15 株式会社東芝 光検出器
KR20230055605A (ko) * 2021-10-19 2023-04-26 에스케이하이닉스 주식회사 이미지 센싱 장치
US12289116B2 (en) 2021-11-15 2025-04-29 Samsung Electronics Co., Ltd. Analog-to-digital converting circuit using auto-zero period optimization and operation method thereof
KR20230116402A (ko) * 2022-01-28 2023-08-04 에스케이하이닉스 주식회사 이미지 센싱 장치
JP2023133816A (ja) * 2022-03-14 2023-09-27 ソニーセミコンダクタソリューションズ株式会社 測距装置

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US20020121655A1 (en) 1998-10-07 2002-09-05 California Institute Of Technology Silicon-on-insulator (SOI) active pixel sensors with the photosites implemented in the substrate
JP2004512723A (ja) 2000-10-16 2004-04-22 シュワルテ　ルドルフ 信号波を検出して処理する方法およびデバイス
JP2004525351A (ja) 2000-12-11 2004-08-19 カネスタ インコーポレイテッド 量子効率変調を用いたｃｍｏｓコンパチブルの三次元イメージセンシングのためのシステム
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JP2011086904A (ja) 2009-10-14 2011-04-28 Optrima Nv フォトニックミキサ、その使用およびシステム
JP2015510259A (ja) 2013-01-10 2015-04-02 ソフトキネティック センサー エヌブイ カラー不可視光センサ、例えば、ｉｒセンサ、すなわち、マルチスペクトルセンサ
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US20160148962A1 (en) 2014-11-26 2016-05-26 Caeleste Cvba Three level transfer gate

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US20020121655A1 (en) 1998-10-07 2002-09-05 California Institute Of Technology Silicon-on-insulator (SOI) active pixel sensors with the photosites implemented in the substrate
US20020036300A1 (en) 1999-01-06 2002-03-28 California Institute Of Technology, A California Corporation Image sensor with motion artifact supression and anti-blooming
JP2004512723A (ja) 2000-10-16 2004-04-22 シュワルテ　ルドルフ 信号波を検出して処理する方法およびデバイス
JP2004525351A (ja) 2000-12-11 2004-08-19 カネスタ インコーポレイテッド 量子効率変調を用いたｃｍｏｓコンパチブルの三次元イメージセンシングのためのシステム
US20090224351A1 (en) 2002-08-27 2009-09-10 E-Phocus, Inc CMOS sensor with approximately equal potential photodiodes
US20050139833A1 (en) 2003-11-04 2005-06-30 Janesick James R. Image sensor with deep well region and method of fabricating the image sensor
JP2008543061A (ja) 2005-05-27 2008-11-27 イーストマン コダック カンパニー グローバルシャッターを有するピン光ダイオード画素
JP2009530604A (ja) 2006-03-14 2009-08-27 プライム センス リミティド 三次元検知のために深度変化させる光照射野
US20100187442A1 (en) 2008-07-29 2010-07-29 University Of Washington Beam generation and steering with integrated optical circuits for light detection and ranging
JP2011086904A (ja) 2009-10-14 2011-04-28 Optrima Nv フォトニックミキサ、その使用およびシステム
JP2015510259A (ja) 2013-01-10 2015-04-02 ソフトキネティック センサー エヌブイ カラー不可視光センサ、例えば、ｉｒセンサ、すなわち、マルチスペクトルセンサ
WO2015197685A1 (en) 2014-06-27 2015-12-30 Softkinetic Sensors Nv Majority current assisted radiation detector device
US20160148962A1 (en) 2014-11-26 2016-05-26 Caeleste Cvba Three level transfer gate

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Publication number Publication date
US20210134854A1 (en) 2021-05-06
CN110431441B (zh) 2023-09-15
KR102484157B1 (ko) 2023-01-03
CN110431441A (zh) 2019-11-08
KR20190127677A (ko) 2019-11-13
EP3602109B1 (en) 2021-01-20
WO2018172610A1 (en) 2018-09-27
EP3602109A1 (en) 2020-02-05
US11411027B2 (en) 2022-08-09
JP2020515085A (ja) 2020-05-21
SG11201906657QA (en) 2019-08-27

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