JP7117299B2 - 無機結合装置及び構造体 - Google Patents
無機結合装置及び構造体 Download PDFInfo
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- JP7117299B2 JP7117299B2 JP2019523819A JP2019523819A JP7117299B2 JP 7117299 B2 JP7117299 B2 JP 7117299B2 JP 2019523819 A JP2019523819 A JP 2019523819A JP 2019523819 A JP2019523819 A JP 2019523819A JP 7117299 B2 JP7117299 B2 JP 7117299B2
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- luminescent
- light
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- layer
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- 239000002245 particle Substances 0.000 claims description 160
- 238000000576 coating method Methods 0.000 claims description 136
- 239000011248 coating agent Substances 0.000 claims description 100
- 238000000231 atomic layer deposition Methods 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 51
- 239000002096 quantum dot Substances 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 19
- 239000010410 layer Substances 0.000 description 172
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- 239000011247 coating layer Substances 0.000 description 66
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- 239000011162 core material Substances 0.000 description 51
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- 239000012528 membrane Substances 0.000 description 41
- 239000002243 precursor Substances 0.000 description 37
- 239000000203 mixture Substances 0.000 description 36
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- 239000002105 nanoparticle Substances 0.000 description 31
- 239000012702 metal oxide precursor Substances 0.000 description 30
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- 150000004703 alkoxides Chemical class 0.000 description 9
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 9
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 8
- 239000004054 semiconductor nanocrystal Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 150000001768 cations Chemical class 0.000 description 7
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
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- 125000006850 spacer group Chemical group 0.000 description 6
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 229910052777 Praseodymium Inorganic materials 0.000 description 5
- 229910002800 Si–O–Al Inorganic materials 0.000 description 5
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- 238000002955 isolation Methods 0.000 description 5
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
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- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052714 tellurium Inorganic materials 0.000 description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
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- 229910052779 Neodymium Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910052769 Ytterbium Inorganic materials 0.000 description 4
- 230000003044 adaptive effect Effects 0.000 description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
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- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 4
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- 230000007062 hydrolysis Effects 0.000 description 4
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- 239000004332 silver Substances 0.000 description 4
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- 238000003980 solgel method Methods 0.000 description 4
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- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 4
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 3
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- 238000007796 conventional method Methods 0.000 description 3
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- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
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- 150000001450 anions Chemical class 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
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- 238000001354 calcination Methods 0.000 description 2
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01S5/00—Semiconductor lasers
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- H01S5/0282—Passivation layers or treatments
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- H01S5/00—Semiconductor lasers
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Description
本出願は、2016年11月3日に出願された米国仮特許出願第62/417,262号及び2016年11月3日に出願された米国仮特許出願第62/417,237号、並びに、2017年11月2日に出願された米国非仮出願第15/802,273号に基づく優先権を主張するものであり、その全内容を参照により本出願において援用する。
或いは又は加えて、酸化ニオブ(特にNb2O5)又は酸化イットリウム(Y2O3)が適用されてもよい。その金属前駆体は、例えば、それぞれ、tert-ブチルイミド)-トリス(ジエチルアミノ)-ニオブ、NbF5又はNbCl5、及び、トリス(エチルシクロペンタジエニル)イットリウムである。
≡Si-OH+Al(CH3)3→≡Si-O-Al(CH3)2+CH4
に従ってシリカゾルゲル層の表面のシラノール基と反応する。
≡Si-O-Al(CH3)2+2H2O→≡Si-O-Al(OH)2+2CH4
2≡Si-O-Al(OH)2→≡Si-O-Al(OH)-O-Al(OH)-O-Si≡+H2O
200~350℃の範囲の堆積温度は、第1の被覆層上のアルミナALDに最も適しており、好ましくは、温度は250~300℃の範囲であるということが判明した。類似の温度が、1つ又は複数のALD層に対する他の金属酸化物前駆体のALDに適用されてもよい。
Claims (6)
- 複数の発光粒子をコンポーネント上に堆積させて、前記発光粒子の複数の層を含む膜を形成するステップであって、前記発光粒子は、第1の波長の光を吸収し、それに応じて、第2の波長の光を発するように構成されている、ステップと、
低圧堆積技術を使用して、前記複数の発光粒子上に無機被覆を堆積させるステップであって、前記無機被覆は、前記複数の発光粒子を互いに及び前記コンポーネントに結合させる、ステップと、
前記コンポーネントの一部を除去して、前記コンポーネントを貫く開口部を作製するステップであって、前記開口部を光が通過して前記発光粒子の膜に直接入射することができるか、又は、前記開口部を通過する光を、前記発光粒子の膜から直接発することができる、ステップと、
を含む方法。 - 前記無機被覆は酸化物被覆である、請求項1に記載の方法。
- 前記発光粒子は量子ドットである、請求項1に記載の方法。
- 前記低圧堆積技術は、原子層堆積技術である、請求項1に記載の方法。
- 無機被覆の熱膨張係数は、前記複数の発光粒子及び前記コンポーネントのうちの1つの熱膨張係数と実質的に一致する、請求項1に記載の方法。
- 無機被覆の屈折率が、前記複数の発光粒子及び前記コンポーネントのうちの1つの屈折率と実質的に一致する、請求項1に記載の方法。
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US62/417,237 | 2016-11-03 | ||
US62/417,262 | 2016-11-03 | ||
US15/802,273 US10886437B2 (en) | 2016-11-03 | 2017-11-02 | Devices and structures bonded by inorganic coating |
US15/802,273 | 2017-11-02 | ||
PCT/US2017/059954 WO2018085670A1 (en) | 2016-11-03 | 2017-11-03 | Inorganic bonded devices and structures |
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US20210119085A1 (en) | 2021-04-22 |
US11984540B2 (en) | 2024-05-14 |
KR20190077487A (ko) | 2019-07-03 |
JP2022105559A (ja) | 2022-07-14 |
TW201826566A (zh) | 2018-07-16 |
CN110291224A (zh) | 2019-09-27 |
EP3535437A1 (en) | 2019-09-11 |
US20230207741A1 (en) | 2023-06-29 |
WO2018085670A1 (en) | 2018-05-11 |
US10886437B2 (en) | 2021-01-05 |
TWI830690B (zh) | 2024-02-01 |
US20180122993A1 (en) | 2018-05-03 |
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