JP7046294B1 - 光半導体装置 - Google Patents

光半導体装置 Download PDF

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Publication number
JP7046294B1
JP7046294B1 JP2022502068A JP2022502068A JP7046294B1 JP 7046294 B1 JP7046294 B1 JP 7046294B1 JP 2022502068 A JP2022502068 A JP 2022502068A JP 2022502068 A JP2022502068 A JP 2022502068A JP 7046294 B1 JP7046294 B1 JP 7046294B1
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Japan
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support
semiconductor device
semiconductor layer
mounting surface
optical semiconductor
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JP2022502068A
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English (en)
Japanese (ja)
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JPWO2023079726A5 (https=
JPWO2023079726A1 (https=
Inventor
喜之 小川
和重 川▲崎▼
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04254Electrodes, e.g. characterised by the structure characterised by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • H01S5/0425Electrodes, e.g. characterised by the structure
    • H01S5/04256Electrodes, e.g. characterised by the structure characterised by the configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/17Semiconductor lasers comprising special layers
    • H01S2301/176Specific passivation layers on surfaces other than the emission facet

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Device Packages (AREA)
JP2022502068A 2021-11-08 2021-11-08 光半導体装置 Active JP7046294B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/040924 WO2023079726A1 (ja) 2021-11-08 2021-11-08 光半導体装置

Publications (3)

Publication Number Publication Date
JP7046294B1 true JP7046294B1 (ja) 2022-04-01
JPWO2023079726A1 JPWO2023079726A1 (https=) 2023-05-11
JPWO2023079726A5 JPWO2023079726A5 (https=) 2023-10-03

Family

ID=81255864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022502068A Active JP7046294B1 (ja) 2021-11-08 2021-11-08 光半導体装置

Country Status (4)

Country Link
US (1) US20250038474A1 (https=)
JP (1) JP7046294B1 (https=)
CN (1) CN118120121A (https=)
WO (1) WO2023079726A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11317565A (ja) * 1998-05-07 1999-11-16 Toshiba Corp 半導体表面処理用治具
JP2008124218A (ja) * 2006-11-10 2008-05-29 Sony Corp 半導体発光素子およびその製造方法
JP2008141180A (ja) * 2006-11-10 2008-06-19 Sony Corp 半導体発光素子、光ピックアップ装置および情報記録再生装置
US20170031115A1 (en) * 2015-07-29 2017-02-02 Corning Optical Communications LLC Wafer-level integrated opto-electronic module
JP2020145391A (ja) * 2019-03-08 2020-09-10 日本ルメンタム株式会社 半導体光素子、光モジュール、及び半導体光素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11317565A (ja) * 1998-05-07 1999-11-16 Toshiba Corp 半導体表面処理用治具
JP2008124218A (ja) * 2006-11-10 2008-05-29 Sony Corp 半導体発光素子およびその製造方法
JP2008141180A (ja) * 2006-11-10 2008-06-19 Sony Corp 半導体発光素子、光ピックアップ装置および情報記録再生装置
US20170031115A1 (en) * 2015-07-29 2017-02-02 Corning Optical Communications LLC Wafer-level integrated opto-electronic module
JP2020145391A (ja) * 2019-03-08 2020-09-10 日本ルメンタム株式会社 半導体光素子、光モジュール、及び半導体光素子の製造方法

Also Published As

Publication number Publication date
WO2023079726A1 (ja) 2023-05-11
CN118120121A (zh) 2024-05-31
JPWO2023079726A1 (https=) 2023-05-11
US20250038474A1 (en) 2025-01-30

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