JP6952148B2 - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP6952148B2 JP6952148B2 JP2020033010A JP2020033010A JP6952148B2 JP 6952148 B2 JP6952148 B2 JP 6952148B2 JP 2020033010 A JP2020033010 A JP 2020033010A JP 2020033010 A JP2020033010 A JP 2020033010A JP 6952148 B2 JP6952148 B2 JP 6952148B2
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- 239000002041 carbon nanotube Substances 0.000 claims description 144
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 143
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 140
- 239000004065 semiconductor Substances 0.000 claims description 127
- 238000001514 detection method Methods 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 6
- 229910021404 metallic carbon Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 description 23
- 230000005684 electric field Effects 0.000 description 14
- 239000002048 multi walled nanotube Substances 0.000 description 12
- 239000002079 double walled nanotube Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000002109 single walled nanotube Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000004044 response Effects 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Description
100 半導体素子
102 第一カーボンナノチューブ
104 半導体層
1042 n型半導体層
1044 p型半導体層
106 第二カーボンナノチューブ
108 多層構造体
202 第一電極
204 第二電極
206 第三電極
208 絶縁層
210 基板
212 電流検出素子
Claims (5)
- 半導体素子、第一電極、第二電極及び電流検出素子を含む光検出器において、前記半導体素子、前記第一電極、前記第二電極及び前記電流検出素子が互いに電気的に接続されて、回路が形成され、
前記半導体素子は、第一カーボンナノチューブと、半導体層と、第二カーボンナノチューブと、を含み、
前記半導体層はn型半導体層とp型半導体層とを含み、前記n型半導体層と前記p型半導体層は積層して設置され、前記半導体層が第一表面及び第二表面を有し、前記第一表面及び前記第二表面が対向して設置され、
前記第一カーボンナノチューブは前記第一表面に設置され、且つ前記第一表面と直接に接触され、前記第一カーボンナノチューブは前記第一電極と電気的に接続され、
前記第二カーボンナノチューブは前記第二表面に設置され、且つ前記第二表面と直接に接触され、前記第二カーボンナノチューブは前記第二電極と電気的に接続され、
前記第一カーボンナノチューブ及び前記第二カーボンナノチューブは交差して設置され、前記第一カーボンナノチューブ、前記半導体層及び前記第二カーボンナノチューブは順に積層して設置されて、多層構造体が形成され、
第三電極及び絶縁層をさらに備え、
前記第三電極、前記絶縁層及び前記半導体素子が順次積層され、
前記第三電極の電圧を変更して、前記半導体層に形成されたヘテロ接合を、pn接合とnn接合との間で切り替え、前記光検出器の動作モードを、走査光電流がドット状に検出されるドットモードと走査光電流が線状に検出される線モードとの間で切り替える切り替え部を備えることを特徴とする光検出器。 - 前記第一カーボンナノチューブ及び前記第二カーボンナノチューブは金属性のカーボンナノチューブであることを特徴とする、請求項1に記載の光検出器。
- 前記第一カーボンナノチューブ及び前記第二カーボンナノチューブは内殻カーボンナノチューブであることを特徴とする、請求項1に記載の光検出器。
- 前記多層構造体の横方向断面の面積は1nm2〜100nm2であることを特徴とする、請求項1に記載の光検出器。
- 前記第一カーボンナノチューブの延伸方向と前記第二カーボンナノチューブの延伸方向とは互いに垂直であることを特徴とする、請求項1に記載の光検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911089315.7A CN112786714B (zh) | 2019-11-08 | 2019-11-08 | 光电探测器 |
CN201911089315.7 | 2019-11-08 |
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JP2021077846A JP2021077846A (ja) | 2021-05-20 |
JP6952148B2 true JP6952148B2 (ja) | 2021-10-20 |
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US (1) | US20210143293A1 (ja) |
JP (1) | JP6952148B2 (ja) |
CN (1) | CN112786714B (ja) |
TW (1) | TWI738122B (ja) |
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CN113299834A (zh) * | 2021-05-18 | 2021-08-24 | 西北工业大学 | 基于纳米管复合结构的自驱动宽波段光电探测器 |
Family Cites Families (15)
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JP4251268B2 (ja) * | 2002-11-20 | 2009-04-08 | ソニー株式会社 | 電子素子及びその製造方法 |
JP2005116618A (ja) * | 2003-10-03 | 2005-04-28 | Fujitsu Ltd | 半導体装置およびその製造方法 |
JP5029600B2 (ja) * | 2006-03-03 | 2012-09-19 | 富士通株式会社 | カーボンナノチューブを用いた電界効果トランジスタとその製造方法及びセンサ |
CN101527327B (zh) * | 2008-03-07 | 2012-09-19 | 清华大学 | 太阳能电池 |
CN103681895A (zh) * | 2013-11-28 | 2014-03-26 | 北京大学 | 一种基于碳纳米管的红外成像探测器及其制备方法 |
CN107564946A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 纳米晶体管 |
CN107564979B (zh) * | 2016-07-01 | 2019-08-13 | 清华大学 | 光探测器 |
CN107564948B (zh) * | 2016-07-01 | 2021-01-05 | 清华大学 | 纳米异质结构及纳米晶体管的制备方法 |
CN107564947A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 纳米异质结构 |
US11162849B2 (en) * | 2016-12-22 | 2021-11-02 | Hitachi, Ltd. | Temperature detecting element and temperature detecting apparatus including the same |
CN108807562B (zh) * | 2017-04-28 | 2021-01-05 | 清华大学 | 光电探测器及其制备方法 |
CN108963079B (zh) * | 2017-05-17 | 2020-03-17 | 清华大学 | 光电探测元件以及光电探测器 |
CN108933182B (zh) * | 2017-05-24 | 2020-05-15 | 清华大学 | 光探测器 |
US10741707B2 (en) * | 2018-03-23 | 2020-08-11 | International Business Machines Corporation | Graphene-contacted nanotube photodetector |
CN112786678B (zh) * | 2019-11-08 | 2022-11-22 | 清华大学 | 半导体结构及半导体器件 |
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2019
- 2019-11-08 CN CN201911089315.7A patent/CN112786714B/zh active Active
- 2019-11-21 TW TW108142365A patent/TWI738122B/zh active
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- 2020-02-28 JP JP2020033010A patent/JP6952148B2/ja active Active
- 2020-06-16 US US16/903,161 patent/US20210143293A1/en not_active Abandoned
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TWI738122B (zh) | 2021-09-01 |
US20210143293A1 (en) | 2021-05-13 |
CN112786714B (zh) | 2022-11-22 |
JP2021077846A (ja) | 2021-05-20 |
CN112786714A (zh) | 2021-05-11 |
TW202119607A (zh) | 2021-05-16 |
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