JP6894760B2 - 光電変換装置及び撮像システム - Google Patents

光電変換装置及び撮像システム Download PDF

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Publication number
JP6894760B2
JP6894760B2 JP2017098194A JP2017098194A JP6894760B2 JP 6894760 B2 JP6894760 B2 JP 6894760B2 JP 2017098194 A JP2017098194 A JP 2017098194A JP 2017098194 A JP2017098194 A JP 2017098194A JP 6894760 B2 JP6894760 B2 JP 6894760B2
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Japan
Prior art keywords
photoelectric conversion
impurity diffusion
electrode layer
diode
unit
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JP2017098194A
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Japanese (ja)
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JP2018195977A (ja
JP2018195977A5 (https=
Inventor
和昭 田代
和昭 田代
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2017098194A priority Critical patent/JP6894760B2/ja
Priority to US15/976,399 priority patent/US10630923B2/en
Publication of JP2018195977A publication Critical patent/JP2018195977A/ja
Publication of JP2018195977A5 publication Critical patent/JP2018195977A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D1/00—Control of position, course, altitude or attitude of land, water, air or space vehicles, e.g. using automatic pilots
    • G05D1/02—Control of position or course in two dimensions
    • G05D1/021—Control of position or course in two dimensions specially adapted to land vehicles
    • G05D1/0231—Control of position or course in two dimensions specially adapted to land vehicles using optical position detecting means
    • G05D1/0246—Control of position or course in two dimensions specially adapted to land vehicles using optical position detecting means using a video camera in combination with image processing means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Electromagnetism (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2017098194A 2017-05-17 2017-05-17 光電変換装置及び撮像システム Active JP6894760B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017098194A JP6894760B2 (ja) 2017-05-17 2017-05-17 光電変換装置及び撮像システム
US15/976,399 US10630923B2 (en) 2017-05-17 2018-05-10 Photoelectric conversion apparatus and imaging system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017098194A JP6894760B2 (ja) 2017-05-17 2017-05-17 光電変換装置及び撮像システム

Publications (3)

Publication Number Publication Date
JP2018195977A JP2018195977A (ja) 2018-12-06
JP2018195977A5 JP2018195977A5 (https=) 2020-08-06
JP6894760B2 true JP6894760B2 (ja) 2021-06-30

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JP2017098194A Active JP6894760B2 (ja) 2017-05-17 2017-05-17 光電変換装置及び撮像システム

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US (1) US10630923B2 (https=)
JP (1) JP6894760B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7527806B2 (ja) * 2020-02-19 2024-08-05 キヤノン株式会社 光電変換装置、撮像システム、移動体
CN115398626A (zh) 2020-04-27 2022-11-25 松下知识产权经营株式会社 摄像装置
WO2022106161A1 (en) * 2020-11-23 2022-05-27 Asml Netherlands B.V. Semiconductor charged particle detector for microscopy

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159422A (en) 1987-06-17 1992-10-27 Canon Kabushiki Kaisha Photoelectric conversion device
US6069393A (en) 1987-06-26 2000-05-30 Canon Kabushiki Kaisha Photoelectric converter
US5366921A (en) 1987-11-13 1994-11-22 Canon Kabushiki Kaisha Process for fabricating an electronic circuit apparatus
JPH0294565A (ja) 1988-09-30 1990-04-05 Toshiba Corp 固体撮像装置
DE4321789C2 (de) * 1993-06-30 1999-12-09 Siemens Ag Festkörperbildwandler
JPH114374A (ja) * 1997-06-12 1999-01-06 Nikon Corp 撮像装置
US6800836B2 (en) 2000-07-10 2004-10-05 Canon Kabushiki Kaisha Image pickup device, radiation image pickup device and image processing system
US6717151B2 (en) 2000-07-10 2004-04-06 Canon Kabushiki Kaisha Image pickup apparatus
JP2002353433A (ja) * 2001-05-25 2002-12-06 Canon Inc 固体撮像装置
US6870209B2 (en) * 2003-01-09 2005-03-22 Dialog Semiconductor Gmbh CMOS pixel with dual gate PMOS
US7268332B2 (en) * 2004-01-26 2007-09-11 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of the same
US7420406B2 (en) * 2004-10-12 2008-09-02 Infineon Technologies Ag Method and circuit arrangement for setting an initial value on a charge-storage element
US7642580B2 (en) * 2007-06-20 2010-01-05 Apitina Imaging Corporation Imager pixel structure and circuit
JP5404112B2 (ja) 2009-03-12 2014-01-29 キヤノン株式会社 固体撮像素子、その駆動方法及び撮像システム
WO2011058684A1 (ja) * 2009-11-12 2011-05-19 パナソニック株式会社 固体撮像装置
JP2012164892A (ja) 2011-02-08 2012-08-30 Panasonic Corp 固体撮像装置
CN103493475B (zh) * 2011-04-28 2017-03-08 松下知识产权经营株式会社 固体摄像装置以及使用了该固体摄像装置的摄像机系统
US8766325B2 (en) * 2011-10-17 2014-07-01 Rohm Co., Ltd. Semiconductor device
JP6141024B2 (ja) 2012-02-10 2017-06-07 キヤノン株式会社 撮像装置および撮像システム
JP6108884B2 (ja) * 2013-03-08 2017-04-05 キヤノン株式会社 光電変換装置及び撮像システム
JP6368115B2 (ja) 2013-05-10 2018-08-01 キヤノン株式会社 固体撮像装置およびカメラ
JP6207351B2 (ja) 2013-11-12 2017-10-04 キヤノン株式会社 固体撮像装置および撮像システム
JP6171997B2 (ja) 2014-03-14 2017-08-02 ソニー株式会社 固体撮像素子およびその駆動方法、並びに電子機器
JP2016021445A (ja) * 2014-07-11 2016-02-04 キヤノン株式会社 光電変換装置、および、撮像システム
JP6420650B2 (ja) * 2014-12-10 2018-11-07 株式会社Ｓｕｂａｒｕ 車外環境認識装置
JP6579774B2 (ja) 2015-03-30 2019-09-25 キヤノン株式会社 固体撮像装置およびカメラ
JP6494368B2 (ja) 2015-03-30 2019-04-03 キヤノン株式会社 固体撮像装置およびカメラ
JP2017098809A (ja) 2015-11-26 2017-06-01 キヤノン株式会社 光電変換装置、および、撮像システム
JP6702711B2 (ja) 2015-12-17 2020-06-03 キヤノン株式会社 光電変換装置、および、撮像システム
JP2018093263A (ja) 2016-11-30 2018-06-14 キヤノン株式会社 光電変換装置、光電変換装置の駆動方法、および、撮像システム

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JP2018195977A (ja) 2018-12-06
US10630923B2 (en) 2020-04-21
US20180338099A1 (en) 2018-11-22

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