JP6781293B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6781293B2 JP6781293B2 JP2019068432A JP2019068432A JP6781293B2 JP 6781293 B2 JP6781293 B2 JP 6781293B2 JP 2019068432 A JP2019068432 A JP 2019068432A JP 2019068432 A JP2019068432 A JP 2019068432A JP 6781293 B2 JP6781293 B2 JP 6781293B2
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- 239000004065 semiconductor Substances 0.000 title claims description 320
- 239000000758 substrate Substances 0.000 claims description 116
- 150000001875 compounds Chemical class 0.000 claims description 70
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 28
- 229910002601 GaN Inorganic materials 0.000 description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 22
- 150000004767 nitrides Chemical class 0.000 description 22
- 238000000034 method Methods 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010000 carbonizing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Description
本発明の他の局面に従う半導体装置は、一方の主面と、一方の主面と反対側にある他方の主面とを有するSi基板またはSOI(Silicon On Insulator)基板と、Si基板またはSOI基板の一方の主面に形成され、ワイドギャップ半導体であるSi化合物よりなるSi化合物半導体層とを備え、Si化合物半導体層は、pn接合を構成するp型半導体層とn型半導体層とを含み、Si化合物半導体層におけるSi基板またはSOI基板の側とは反対側に形成された、MOSFET(Metal−Oxide−Semiconductor Field−Effect Transistor)のソース電極およびドレイン電極と、Si基板またはSOI基板の他方の主面に形成され、ソース電極およびドレイン電極のうち一方の電極と電気的に接続された裏面電極とをさらに備え、pn接合は、裏面電極と、ソース電極およびドレイン電極のうち他方の電極との間に電圧が印加されている場合に逆バイアス状態となり、Si化合物半導体層は、p型半導体層とともにn型半導体層を挟み、かつn型半導体層とpn接合を構成する他のp型半導体層をさらに含み、他のp型半導体層の表面にMOSFETのチャネルが形成される。
1a,1b 基板の主面
3,6b p型半導体層
4 Si化合物半導体層
5,6a n型半導体層
5a,5b p型不純物領域
7 GaN層
8 窒化物半導体層
9 AlGaN層
10 デバイス形成層
11 ソース電極
12 絶縁層
13 ゲート電極
15 ドレイン電極
17 裏面電極
22 SiO2層
23 SOI層
GND 接地電位
TE 二次元電子ガス
VD,VG 電圧
VL 空乏層
Claims (3)
- 一方の主面と、前記一方の主面と反対側にある他方の主面とを有するSi基板またはSOI(Silicon On Insulator)基板と、
前記Si基板またはSOI基板の前記一方の主面に形成され、ワイドギャップ半導体であるSi化合物よりなるSi化合物半導体層とを備え、
前記Si化合物半導体層は、pn接合を構成するp型半導体層とn型半導体層とを含み、
前記Si化合物半導体層における前記Si基板またはSOI基板の側とは反対側に形成された、MOSFET(Metal−Oxide−Semiconductor Field−Effect Transistor)のソース電極およびドレイン電極と、
前記Si基板またはSOI基板の前記他方の主面に形成され、前記ソース電極およびドレイン電極のうち一方の電極と電気的に接続された裏面電極とをさらに備え、
前記pn接合は、前記裏面電極と、前記ソース電極およびドレイン電極のうち他方の電極との間に電圧が印加されている場合に逆バイアス状態となり、
前記Si化合物半導体層は、前記n型半導体層とともに前記p型半導体層を挟み、かつ前記p型半導体層とpn接合を構成する他のn型半導体層をさらに含み、
前記他のn型半導体層の表面にMOSFETのチャネルが形成される、半導体装置。 - 一方の主面と、前記一方の主面と反対側にある他方の主面とを有するSi基板またはSOI(Silicon On Insulator)基板と、
前記Si基板またはSOI基板の前記一方の主面に形成され、ワイドギャップ半導体であるSi化合物よりなるSi化合物半導体層とを備え、
前記Si化合物半導体層は、pn接合を構成するp型半導体層とn型半導体層とを含み、
前記Si化合物半導体層における前記Si基板またはSOI基板の側とは反対側に形成された、MOSFET(Metal−Oxide−Semiconductor Field−Effect Transistor)のソース電極およびドレイン電極と、
前記Si基板またはSOI基板の前記他方の主面に形成され、前記ソース電極およびドレイン電極のうち一方の電極と電気的に接続された裏面電極とをさらに備え、
前記pn接合は、前記裏面電極と、前記ソース電極およびドレイン電極のうち他方の電極との間に電圧が印加されている場合に逆バイアス状態となり、
前記Si化合物半導体層は、前記p型半導体層とともに前記n型半導体層を挟み、かつ前記n型半導体層とpn接合を構成する他のp型半導体層をさらに含み、
前記他のp型半導体層の表面にMOSFETのチャネルが形成される、半導体装置。 - 前記Si化合物は、2eV以上3.26eV以下のバンドギャップを有する、請求項1または2に記載の半導体装置。
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JP2014153236A Division JP6553336B2 (ja) | 2014-07-28 | 2014-07-28 | 半導体装置 |
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Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60142568A (ja) * | 1983-12-29 | 1985-07-27 | Sharp Corp | 炭化珪素電界効果トランジスタの製造方法 |
JPS62204519A (ja) * | 1986-03-04 | 1987-09-09 | Agency Of Ind Science & Technol | 炭化シリコンデバイスの基板構造 |
JPS62214624A (ja) * | 1986-03-17 | 1987-09-21 | Fujitsu Ltd | 半導体装置の製造方法 |
US9570436B2 (en) * | 2012-06-20 | 2017-02-14 | National Institute Of Advanced Industrial Science And Technology | Semiconductor device |
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