JP6774178B2 - Equipment for processing substrates and manufacturing methods for articles - Google Patents

Equipment for processing substrates and manufacturing methods for articles Download PDF

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Publication number
JP6774178B2
JP6774178B2 JP2015224226A JP2015224226A JP6774178B2 JP 6774178 B2 JP6774178 B2 JP 6774178B2 JP 2015224226 A JP2015224226 A JP 2015224226A JP 2015224226 A JP2015224226 A JP 2015224226A JP 6774178 B2 JP6774178 B2 JP 6774178B2
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substrate
mold
imprint material
adsorption
region
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JP2017092396A5 (en
JP2017092396A (en
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節男 吉田
節男 吉田
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Canon Inc
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Canon Inc
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Priority to JP2015224226A priority Critical patent/JP6774178B2/en
Priority to KR1020207010979A priority patent/KR102238990B1/en
Priority to PCT/JP2016/083495 priority patent/WO2017086246A1/en
Priority to KR1020187016084A priority patent/KR102103288B1/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Description

本発明は、基板を処理する装置、及び物品の製造方法に関する。 The present invention relates to an apparatus for processing a substrate and a method for manufacturing an article.

インプリント装置では、基板上で硬化させたインプリント材から型を引き離す離型の際、型と硬化したインプリント材との界面（接触部）に大きな引き剥がし応力が瞬間的に印加される。この応力によって、形成されるパターンの歪みを引き起こす場合があり、これがパターンの欠陥となり得る。 In the imprinting apparatus, when the mold is released from the imprint material cured on the substrate, a large peeling stress is instantaneously applied to the interface (contact portion) between the mold and the cured imprint material. This stress can cause distortion of the formed pattern, which can be a defect in the pattern.

特許文献１では、離型の際、一旦型を基板に向かって凸形に変形させて、型をインプリント材のパターン形成部の周囲から徐々に引き剥がすことで、急激な応力の発生を回避している。また、特許文献２及び３では、離型の際、基板保持部であるチャックの吸着圧力を弱めることにより、型を引き剥がすときに基板をチャックから浮上させる。これにより、型と硬化したインプリント材との界面に生じる応力を低減し、パターンの歪みによる欠陥を減少させている。 In Patent Document 1, when the mold is released, the mold is once deformed into a convex shape toward the substrate, and the mold is gradually peeled off from the periphery of the pattern forming portion of the imprint material to avoid the generation of sudden stress. are doing. Further, in Patent Documents 2 and 3, the substrate is lifted from the chuck when the mold is peeled off by weakening the suction pressure of the chuck which is the substrate holding portion at the time of mold release. As a result, the stress generated at the interface between the mold and the cured imprint material is reduced, and defects due to pattern distortion are reduced.

米国特許出願公開第２００７／０１１４６８６号明細書U.S. Patent Application Publication No. 2007/0114686 米国特許出願公開第２００６／０１７２０３１号明細書U.S. Patent Application Publication No. 2006/0172031 米国特許出願公開第２０１０／０１０２４６９号明細書U.S. Patent Application Publication No. 2010/0102469

半導体デバイスや撮像素子、表示パネルの製造にインプリント方式を適用する場合、できるだけ大きい面積を一括してインプリントすることにより、スループットを向上させることができる。この場合、型とインプリント材が接する面積は大きくなる。 When the imprint method is applied to the manufacture of semiconductor devices, image sensors, and display panels, the throughput can be improved by imprinting as large an area as possible at once. In this case, the area where the mold and the imprint material come into contact with each other becomes large.

上記のように大きい面積を一括してインプリントする場合、離型時には大きい面積の型をインプリント材から引き離すことになる。このとき、従来技術に従い、離型時に基板を吸着保持するチャックの吸着圧力を弱め、基板をチャックから浮上させる場合を想定する。例えば、基板の全面に配置されたショット領域を一括でインプリントする場合、離型時にチャックの吸着圧力を弱め基板をチャックから浮上させると、型と基板がそれぞれ変形する。具体的には、離型を開始すると、図９（ａ）のように、まず基板であるウエハ５３の端からモールド５１と硬化したインプリント材である樹脂５２との剥離が始まり、モールド５１とウエハ５３が変形する。離型が進むに従って、ウエハ５３の端より中心に向かってモールド５１と樹脂５２が剥離していき、離型の完了前には、モールド５１とウエハ５３が図９（ｂ）のように変形する。図９（ｂ）において、ウエハ５３の中央付近が剥離するときには、ウエハ５３は端付近をチャック５４に接し中央部分がモールドに向かって凸型に変形し、モールド５１は基板に向かって凸型に変形する。ウエハ５３をチャック５４から浮上させる範囲が広いために、モールド５１及びウエハ５３の変形は大きくなる。 When imprinting a large area at once as described above, the mold having a large area is separated from the imprint material at the time of mold release. At this time, according to the prior art, it is assumed that the suction pressure of the chuck that sucks and holds the substrate at the time of mold release is weakened to lift the substrate from the chuck. For example, when imprinting shot regions arranged on the entire surface of a substrate at once, if the suction pressure of the chuck is weakened at the time of mold release and the substrate is lifted from the chuck, the mold and the substrate are deformed respectively. Specifically, when the mold release is started, as shown in FIG. 9A, first, peeling of the mold 51 and the cured imprint material resin 52 starts from the end of the wafer 53 which is the substrate, and the mold 51 and the mold 51 The wafer 53 is deformed. As the mold release progresses, the mold 51 and the resin 52 are peeled off from the edge of the wafer 53 toward the center, and the mold 51 and the wafer 53 are deformed as shown in FIG. 9B before the mold release is completed. .. In FIG. 9B, when the vicinity of the center of the wafer 53 is peeled off, the wafer 53 is in contact with the chuck 54 near the end and the central portion is deformed in a convex shape toward the mold, and the mold 51 is in a convex shape toward the substrate. Deform. Since the range in which the wafer 53 is levitated from the chuck 54 is wide, the deformation of the mold 51 and the wafer 53 becomes large.

これにより、型及び基板の各部材が破損したり、基板上に形成されたインプリント材のパターンに欠陥が生じたりするという問題が生じる。また、ウエハ５３をチャック５４から浮上する範囲が広いため、ウエハ５３がチャック５４から脱落しやすくなるという問題も発生する。 This causes problems such as damage to each member of the mold and the substrate, and defects in the pattern of the imprint material formed on the substrate. Further, since the range in which the wafer 53 floats from the chuck 54 is wide, there is a problem that the wafer 53 easily falls off from the chuck 54.

これらの問題を回避するために、ウエハ５３のチャック５４への吸着圧力を大きくすれば、ウエハ５３がチャック５４から浮上する面積を小さくすることはできる。しかし、前述の型とインプリント材との界面に生じる応力を低減する効果は小さくなり、パターンの欠陥を減少させる効果は小さくなる。 In order to avoid these problems, if the suction pressure of the wafer 53 to the chuck 54 is increased, the area where the wafer 53 floats from the chuck 54 can be reduced. However, the effect of reducing the stress generated at the interface between the mold and the imprint material is reduced, and the effect of reducing pattern defects is reduced.

本発明は、例えば、型及び基板の変形による破損や基板の基板保持部からの脱落の防止と、パターンの歪みや欠陥の抑制との両立に有利な技術を提供することを目的とする。 An object of the present invention is to provide, for example, a technique advantageous for preventing damage due to deformation of a mold and a substrate and dropping of a substrate from a substrate holding portion, and suppressing distortion and defects of a pattern.

本発明の一側面によれば、基板上の未硬化のインプリント材と型とを互いに接触させた状態で前記インプリント材を硬化させる装置であって、前記基板を吸着する複数の吸着領域を有する基板保持部と、前記複数の吸着領域のそれぞれにおける吸着力を制御する制御部とを有し、前記複数の吸着領域は、吸着される基板の外周円と同心円状に区分されており、前記制御部は、硬化した前記インプリント材から前記型を引き離す際に、前記型と前記インプリント材とが剥離された領域と前記型と前記インプリント材とが剥離されていない領域との境界の位置である剥離位置が前記基板の外側から中心に向かって移動するのに合わせて、前記同心円状に形成された前記複数の吸着領域のうち外周側の吸着領域から中心の吸着領域に向かって順次、吸着力を弱めていくとともに、各吸着領域において、当該吸着領域の吸着力を弱めてから、当該吸着領域の上で前記型と前記インプリント材との剥離が完了するものとして予め定められた時間が経過した後に、当該吸着領域の吸着力を強めることを特徴とする装置が提供される。 According to one aspect of the present invention, it is an apparatus for curing the imprint material in a state where the uncured imprint material on the substrate and the mold are in contact with each other, and a plurality of adsorption regions for adsorbing the substrate are formed. It has a substrate holding unit and a control unit that controls the adsorption force in each of the plurality of adsorption regions, and the plurality of adsorption regions are divided concentrically with the outer peripheral circle of the substrate to be adsorbed. When the mold is separated from the cured imprint material, the control unit determines the boundary between the region where the mold and the imprint material are peeled off and the region where the mold and the imprint material are not peeled off. As the peeling position, which is the position, moves from the outside of the substrate toward the center, the suction regions on the outer peripheral side of the plurality of concentrically formed suction regions are sequentially directed toward the center suction region. , The adsorption force is weakened, and in each adsorption region, the adsorption force of the adsorption region is weakened, and then the separation between the mold and the imprint material is completed on the adsorption region. after the time has elapsed, apparatus characterized by Ru strengthening the suction force of the suction region is provided.

本発明によれば、型及び基板の変形による破損や基板の基板保持部からの脱落の防止と、パターンの歪みや欠陥の抑制との両立に有利な技術を提供することができる。 According to the present invention, it is possible to provide a technique advantageous for preventing damage due to deformation of the mold and the substrate and falling off of the substrate from the substrate holding portion, and suppressing distortion and defects of the pattern.

実施形態に係るインプリント装置の構成を示す図。The figure which shows the structure of the imprint apparatus which concerns on embodiment. 実施形態における基板保持部の構成を示す図。The figure which shows the structure of the substrate holding part in an embodiment. 実施形態における基板保持部による基板の保持及びその解除のための構成を示す図。The figure which shows the structure for holding and releasing the substrate by the substrate holding part in an embodiment. 実施形態におけるインプリント処理を説明する図。The figure explaining the imprint process in embodiment. 基板上の隣接しない複数のパターン領域を一度にインプリントする例を説明する図。The figure explaining the example of imprinting a plurality of non-adjacent pattern areas on a substrate at a time. 実施形態におけるインプリント処理を説明する図。The figure explaining the imprint process in embodiment. 実施形態における基板保持部の構成を示す図。The figure which shows the structure of the substrate holding part in an embodiment. 実施形態における基板保持部の構成を示す図。The figure which shows the structure of the substrate holding part in an embodiment. 従来のインプリント処理を説明する図。The figure explaining the conventional imprint processing.

以下、図面を参照して本発明の実施形態について詳細に説明する。なお、本発明は以下の実施形態に限定されるものではなく、本発明の実施に有利な具体例を示すにすぎない。また、以下の実施形態の中で説明されている特徴の組み合わせの全てが本発明の課題解決のために必須のものであるとは限らない。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. It should be noted that the present invention is not limited to the following embodiments, but merely shows specific examples advantageous for carrying out the present invention. In addition, not all combinations of features described in the following embodiments are essential for solving the problems of the present invention.

＜第１実施形態＞
図１は、本実施形態に係るインプリント装置の構成を示す図である。このインプリント装置は、本実施形態では、紫外線の照射によってインプリント材を硬化させる光硬化法を採用するが、これに限定されるものではなく、例えば入熱によってインプリント材を硬化させる熱硬化法を採用することもできる。 <First Embodiment>
FIG. 1 is a diagram showing a configuration of an imprint device according to the present embodiment. In this embodiment, this imprinting apparatus employs a photocuring method in which the imprinting material is cured by irradiation with ultraviolet rays, but the present invention is not limited to this, and for example, the imprinting material is cured by heat input. The law can also be adopted.

インプリント装置は、パターンが形成された型を用いて基板の上のインプリント材を成形する。同図に示すように、基板保持部５は基板ステージ７上に配置されており、基板保持部５の上には基板２が吸着されている。基板２はまず、不図示のアライメント光学系によって、基板２上のアライメントマークを観察して位置ずれ情報を取得するが、同時に高さ測定装置１５によって、高さ測定装置１５から基板２上面までの距離を測定する。一方、型１は型保持部４によって保持され、また、型１のパターン面と高さ測定装置１５との相対高さは、事前に計測されているため、基板２上面から型１のパターン面までの距離が算出可能となる。ディスペンサ１４はインプリント材３として光硬化樹脂を基板２上に供給する。型１を駆動部１２により下降させて基板２上に供給されたインプリント材３と接触させると、インプリント材３はパターンの彫り込まれた溝に流入する。型１は、インプリント材を硬化させる光（紫外線）に対して透明な材料で形成されている。光源２０から発せられた紫外線は、ハーフミラー１９で反射され、型１を通過して基板２上のインプリント材３に入射する。こうして紫外線を照射されたインプリント材は硬化する。その後、型１を駆動部１２により上昇させることにより、硬化したインプリント材３から型１が引き離され、硬化したインプリント材による型１のパターンの反転像が基板上に形成される。観察光学系１８は、基板２のショット領域の全体を観察するスコープである。観察光学系１８は、インプリント処理の状態、例えば、型１の押印状態や型１へのインプリント材３の充填状態などの確認に用いられる。制御部５０は、これらインプリント処理に係る各部を統括的に制御する。 The imprinting apparatus molds the imprint material on the substrate using a patterned mold. As shown in the figure, the substrate holding portion 5 is arranged on the substrate stage 7, and the substrate 2 is adsorbed on the substrate holding portion 5. First, the substrate 2 observes the alignment mark on the substrate 2 by an alignment optical system (not shown) to acquire the positional deviation information, and at the same time, the height measuring device 15 extends from the height measuring device 15 to the upper surface of the substrate 2. Measure the distance. On the other hand, since the mold 1 is held by the mold holding portion 4 and the relative height between the pattern surface of the mold 1 and the height measuring device 15 is measured in advance, the pattern surface of the mold 1 is measured from the upper surface of the substrate 2. The distance to can be calculated. The dispenser 14 supplies the photocurable resin on the substrate 2 as the imprint material 3. When the mold 1 is lowered by the drive unit 12 and brought into contact with the imprint material 3 supplied on the substrate 2, the imprint material 3 flows into the groove in which the pattern is engraved. The mold 1 is made of a material that is transparent to light (ultraviolet rays) that cures the imprint material. The ultraviolet rays emitted from the light source 20 are reflected by the half mirror 19, pass through the mold 1, and enter the imprint material 3 on the substrate 2. The imprint material irradiated with ultraviolet rays in this way is cured. After that, by raising the mold 1 by the drive unit 12, the mold 1 is separated from the cured imprint material 3, and an inverted image of the pattern of the mold 1 by the cured imprint material is formed on the substrate. The observation optical system 18 is a scope for observing the entire shot region of the substrate 2. The observation optical system 18 is used for confirming the imprint processing state, for example, the imprinting state of the mold 1 and the filling state of the imprint material 3 in the mold 1. The control unit 50 comprehensively controls each unit related to these imprint processes.

上記した駆動部１２は、型１を基板２に対して上下させる機構であるが、型１と基板２との間隔を相対的に変化させる機構であればよい。例えば、基板２を型１に対して上下させる機構であってもよいし、あるいは型１と基板２をそれぞれ上下させる機構を備えていてもよい。 The drive unit 12 described above is a mechanism for moving the mold 1 up and down with respect to the substrate 2, but any mechanism may be used as long as the distance between the mold 1 and the substrate 2 is relatively changed. For example, it may be a mechanism for moving the substrate 2 up and down with respect to the mold 1, or it may be provided with a mechanism for raising and lowering the mold 1 and the substrate 2, respectively.

基板保持部５は、例えば、真空吸着により基板２を保持する。図２（ａ）は、基板保持部５を型１側から見た図である。図２（ａ）に示されるように、基板保持部５は、基板２の下面と接する面には、複数の吸着領域５ａ〜５ｉ（部分保持領域）が同心円状に形成されている。図３に、図２のＡ−Ａ’線に沿う断面図を示す。複数の吸着領域５ａ〜５ｉはそれぞれ、空気圧調整機構に接続される（図３では吸着領域５ｃ〜５ｉについてはその接続構成の図示は省略した。）。ここでは代表的に、吸着領域５ａについて説明する。吸着領域５ａには配管３１が接続されている。配管３１は途中で流路切替弁３２によって二股に別れ、一方はレギュレータ３３を介して不図示の真空ポンプに接続され、他方はレギュレータ３４を介して不図示のコンプレッサに接続される。 The substrate holding portion 5 holds the substrate 2 by, for example, vacuum suction. FIG. 2A is a view of the substrate holding portion 5 as viewed from the mold 1 side. As shown in FIG. 2A, a plurality of adsorption regions 5a to 5i (partial holding regions) are concentrically formed on the surface of the substrate holding portion 5 in contact with the lower surface of the substrate 2. FIG. 3 shows a cross-sectional view taken along the line AA'of FIG. Each of the plurality of suction regions 5a to 5i is connected to the air pressure adjusting mechanism (in FIG. 3, the connection configuration of the suction regions 5c to 5i is not shown). Here, the adsorption region 5a will be typically described. A pipe 31 is connected to the suction region 5a. The pipe 31 is bifurcated by a flow path switching valve 32 on the way, one is connected to a vacuum pump (not shown) via a regulator 33, and the other is connected to a compressor (not shown) via a regulator 34.

基板２を吸着保持する場合、制御部５０は、流路切替弁３２を真空ポンプ側に切り替える。これにより、吸着領域５ａ内の空気が配管３１、流路切替弁３２、レギュレータ３３を介して真空ポンプへ吸引され、吸着領域５ａ内は負圧となって基板２が吸着される。このとき、レギュレータ３３は、制御部５０の制御の下、吸着力（基板保持部５が基板を引き付ける力、基板を保持する力）を制御することができる。 When the substrate 2 is sucked and held, the control unit 50 switches the flow path switching valve 32 to the vacuum pump side. As a result, the air in the suction region 5a is sucked into the vacuum pump via the pipe 31, the flow path switching valve 32, and the regulator 33, and the inside of the suction region 5a becomes a negative pressure and the substrate 2 is sucked. At this time, the regulator 33 can control the suction force (the force of the substrate holding unit 5 to attract the substrate and the force to hold the substrate) under the control of the control unit 50.

基板２の吸着保持を解除する場合、制御部５０は、流路切替弁３２をコンプレッサ側に切り替える。これにより、コンプレッサからの空気がレギュレータ３４、流路切替弁３２、配管３１を介して吸着領域５ａに供給され、吸着領域５ａ内は正圧となって基板２が基板保持部５から離脱する。 When releasing the suction holding of the substrate 2, the control unit 50 switches the flow path switching valve 32 to the compressor side. As a result, air from the compressor is supplied to the suction region 5a via the regulator 34, the flow path switching valve 32, and the pipe 31, and the pressure inside the suction region 5a becomes positive and the substrate 2 is separated from the substrate holding portion 5.

他の吸着領域５ｂ〜５ｉについても同様の構成であるので、説明を省略する。このように本実施形態の基板保持部５は、複数の吸着領域５ａ〜５ｉにおける吸着力をそれぞれ独立に制御可能な構成となっている。 Since the other adsorption regions 5b to 5i have the same configuration, the description thereof will be omitted. As described above, the substrate holding portion 5 of the present embodiment has a configuration in which the suction forces in the plurality of suction regions 5a to 5i can be independently controlled.

次に、図４（ａ）〜（ｄ）を参照して、本実施形態におけるインプリント処理を説明する。本実施形態は、基板２の全面に相当するショット領域のパターンが型１に形成され、基板２の全面に一括してインプリントを行う場合を想定する。また、本実施形態では、型１の上部と型保持部４との間には密閉空間Ａが形成されており、制御部５０の制御の下、圧力調整部６によって、密閉空間Ａ内の空気圧が調整されうる。図４（ａ）は、インプリント処理を開始する前の初期状態を表している。このとき、密閉空間Ａは大気圧状態にされている。 Next, the imprint process in the present embodiment will be described with reference to FIGS. 4 (a) to 4 (d). In this embodiment, it is assumed that a pattern of a shot region corresponding to the entire surface of the substrate 2 is formed on the mold 1 and imprinting is performed collectively on the entire surface of the substrate 2. Further, in the present embodiment, a closed space A is formed between the upper portion of the mold 1 and the mold holding portion 4, and the air pressure in the closed space A is controlled by the pressure adjusting unit 6 under the control of the control unit 50. Can be adjusted. FIG. 4A shows an initial state before the imprint process is started. At this time, the closed space A is in an atmospheric pressure state.

型１のパターン部を基板２上に塗布されたインプリント材３に接触させるとき、圧力調整部６により密閉空間Ａ内を加圧して、型１を基板２に対して凸形に変形させる。この状態が図４（ｂ）に示されている。その後、駆動部１２により型１を基板２に接近させていき、型１のパターン部が基板２上のインプリント材３に接触するのに応じて、密閉空間Ａ内の圧力を下げ、型を平面に戻していく。この状態が図４（ｃ）に示されている。これにより、型１とインプリント材３との間の気体が外側へ順次押し出され、型１とインプリント材３との間に気泡が混入することが防止される。 When the pattern portion of the mold 1 is brought into contact with the imprint material 3 coated on the substrate 2, the pressure adjusting portion 6 pressurizes the inside of the closed space A to deform the mold 1 into a convex shape with respect to the substrate 2. This state is shown in FIG. 4 (b). After that, the mold 1 is brought closer to the substrate 2 by the drive unit 12, and the pressure in the closed space A is lowered in response to the pattern portion of the mold 1 coming into contact with the imprint material 3 on the substrate 2, and the mold is molded. Return to the plane. This state is shown in FIG. 4 (c). As a result, the gas between the mold 1 and the imprint material 3 is sequentially pushed outward, and bubbles are prevented from being mixed between the mold 1 and the imprint material 3.

次に、光源２０からの紫外線を基板２上のインプリント材３に照射することでインプリント材３を硬化させた後、駆動部１２により型１を硬化したインプリント材３から引き離す離型を行う。型１を基板２の延在方向と垂直な方向（ｚ方向）に直線的に引き離す場合、図４（ｃ）のように、型１は基板２に向かう引張り力を受け、すり鉢状に変形しようとする。それにより型１とインプリント材３は、基板２の最外周より剥離し始め、型１と基板２の距離が広がるにつれて、基板２の中心に向かって剥離して行く。このとき、型１とインプリント材３がまさに剥離しようとしている位置（剥離位置）は、基板２の外周円の同心円状になる。剥離位置の直下にある基板保持部５の吸着領域の吸着力を他の吸着領域よりも弱めると、図４（ｄ）のように、基板２の剥離位置近傍は基板保持部５から浮き上がる。これにより、型１とインプリント材３との界面に生じる応力が低減し、パターンの歪みによる欠陥を減少させることができる。 Next, the imprint material 3 is cured by irradiating the imprint material 3 on the substrate 2 with ultraviolet rays from the light source 20, and then the mold 1 is separated from the cured imprint material 3 by the drive unit 12. Do. When the mold 1 is linearly separated in the direction perpendicular to the extending direction (z direction) of the substrate 2, the mold 1 receives a tensile force toward the substrate 2 and deforms into a mortar shape as shown in FIG. 4 (c). And. As a result, the mold 1 and the imprint material 3 begin to peel off from the outermost periphery of the substrate 2, and as the distance between the mold 1 and the substrate 2 increases, the mold 1 and the imprint material 3 peel off toward the center of the substrate 2. At this time, the position (peeling position) where the mold 1 and the imprint material 3 are about to be peeled off is concentric with the outer peripheral circle of the substrate 2. When the suction force of the suction region of the substrate holding portion 5 immediately below the peeling position is weaker than that of the other suction regions, the vicinity of the peeling position of the substrate 2 rises from the substrate holding portion 5 as shown in FIG. 4D. As a result, the stress generated at the interface between the mold 1 and the imprint material 3 can be reduced, and defects due to pattern distortion can be reduced.

離型が進むに従って、剥離位置は基板２の外周より中心へと移動する。そこで本実施形態では、離型の進行に応じて、外周側の吸着領域から中心の吸着領域に向かって順次、吸着領域のレギュレータ３３を調節して吸着力を弱めていく。例えば、剥離位置の直下にある吸着領域のレギュレータ３３を調節する。いったん吸着力を弱めた後、当該剥離位置での剥離が完了するであろう時間を待って、吸着力を元に戻す。これにより、基板２が基板保持部５から浮き上がるのは、剥離位置の近傍のみとなり、基板２が基板保持部５から脱落するという問題が生じ難くなる。また、型１と基板２の変形も小さくなるので、変形により各部材が破損する可能性を低減できる。 As the mold release progresses, the peeling position moves from the outer circumference of the substrate 2 to the center. Therefore, in the present embodiment, the regulator 33 in the suction region is sequentially adjusted from the suction region on the outer peripheral side toward the suction region in the center in accordance with the progress of the mold release to weaken the suction force. For example, the regulator 33 in the suction region immediately below the peeling position is adjusted. After weakening the suction force once, the suction force is restored after waiting for a time when the peeling at the peeling position will be completed. As a result, the substrate 2 is lifted from the substrate holding portion 5 only in the vicinity of the peeling position, and the problem that the substrate 2 falls off from the substrate holding portion 5 is less likely to occur. Further, since the deformation of the mold 1 and the substrate 2 is also small, the possibility that each member is damaged by the deformation can be reduced.

上述の本実施形態によれば、基板全面を一括でインプリントする場合において、型及び基板の変形による破損や、基板の基板保持部からの脱落を生じることなく、パターンの欠陥を減少させることが可能になる。 According to the above-described embodiment, when the entire surface of the substrate is imprinted at once, pattern defects can be reduced without damage due to deformation of the mold and the substrate or dropping of the substrate from the substrate holding portion. It will be possible.

なお、上述の実施形態では、基板２の全面を一括でインプリントする場合を想定した。しかし、本発明は、基板の部分領域ごとに分割してインプリントする場合にも適用可能である。例えば、図２（ｂ）に示すように、図２（ａ）のように、同心円状に分割して形成された複数の吸着領域を、複数の部分領域にそれぞれ設け、上記と同様に離型時に各領域の吸着圧力を制御する。これにより、基板の部分領域ごとにインプリントする場合に、各部分領域において吸着力の部分的な制御が可能になる。 In the above-described embodiment, it is assumed that the entire surface of the substrate 2 is imprinted at once. However, the present invention is also applicable to the case of imprinting by dividing each partial region of the substrate. For example, as shown in FIG. 2B, as shown in FIG. 2A, a plurality of adsorption regions formed by being divided into concentric circles are provided in each of the plurality of partial regions, and the mold is released in the same manner as described above. Sometimes the suction pressure in each region is controlled. This makes it possible to partially control the suction force in each partial region when imprinting each partial region of the substrate.

また、上述の実施形態では、基板保持部の複数の吸着領域を同心円状に分割して形成した。しかし、外側の形状が内側の形状を順次包含するように領域分割されていればよく、円形ではなく例えば楕円形や多角形など他の形状であってもよい。 Further, in the above-described embodiment, the plurality of adsorption regions of the substrate holding portion are formed by dividing them concentrically. However, the outer shape may be regionally divided so as to sequentially include the inner shape, and may be another shape such as an ellipse or a polygon instead of a circle.

型１には互いに隣接しない複数のパターンを形成しておき、これらを一度にインプリント処理することでスループットを向上させる方法もある。図５は、この場合の基板２を上から見た図であり、同図のように、互いに隣接しない複数のパターン領域２ａが一括でインプリント処理される。ここで、パターン領域２ａ間の距離が大きくなると、大きい面積を一括でインプリントする場合と同様の問題が生じうる。しかし、本実施形態によれば、上記例と同様に、型及び基板の変形による破損や、基板のチャックからの脱落を生じることなく、パターンの欠陥を減少させることが可能になる。 There is also a method of forming a plurality of patterns that are not adjacent to each other in the mold 1 and imprinting these patterns at once to improve the throughput. FIG. 5 is a view of the substrate 2 in this case as viewed from above, and as shown in the figure, a plurality of pattern regions 2a that are not adjacent to each other are collectively imprinted. Here, if the distance between the pattern regions 2a becomes large, the same problem as in the case of imprinting a large area at once may occur. However, according to the present embodiment, as in the above example, it is possible to reduce the defects of the pattern without causing damage due to deformation of the mold and the substrate or dropping of the substrate from the chuck.

なお本実施形態では、基板保持部５は真空吸着により基板２を保持する構成であったが、静電吸着などの他の方法で基板２を保持する構成としても、本発明を適用可能である。 In the present embodiment, the substrate holding portion 5 has a configuration of holding the substrate 2 by vacuum adsorption, but the present invention can also be applied to a configuration of holding the substrate 2 by another method such as electrostatic adsorption. ..

＜第２実施形態＞
次に、第２実施形態におけるインプリント処理を説明する。第１実施形態で説明した構成要素には共通の参照符号を付し、それらの説明は省略する。 <Second Embodiment>
Next, the imprint process in the second embodiment will be described. The components described in the first embodiment are designated by common reference numerals, and their description will be omitted.

図７は、本実施形態における基板保持部５を型１側から見た図である。図７に示されるように、基板２と接する面には、基板２の中心線と平行な複数の線によって区分される複数の吸着領域が形成されている。この基板保持部５も、図３と同様な構成により、複数の吸着領域における吸着力をそれぞれ独立に制御可能である。 FIG. 7 is a view of the substrate holding portion 5 in the present embodiment as viewed from the mold 1 side. As shown in FIG. 7, a plurality of adsorption regions divided by a plurality of lines parallel to the center line of the substrate 2 are formed on the surface in contact with the substrate 2. The substrate holding portion 5 also has a configuration similar to that shown in FIG. 3, and can independently control the suction forces in the plurality of suction regions.

本実施形態では、型１を基板２上のインプリント材３に接触させた後、インプリント材３を硬化させるまでの工程は、第１実施形態と同様である。その後、離型するとき、図６（ａ）に示すように、駆動部１２により型１を基板２の一端のみを引き離す。すると型１とインプリント材３は、基板２の一端より剥離を始める。さらに、型１と基板２との距離を広げていくと、型１とインプリント材３は剥離を開始した一端から他端へ向かって剥離していく。このとき、型１とインプリント材３の剥離位置は、円形の基板２の中心線に平行な線状になる。剥離位置の直下にある基板保持部５の吸着領域を他の吸着領域よりも弱めると、図６（ｂ）のように、基板２の剥離位置近傍は基板保持部５から浮き上がる。これにより、第１実施形態と同様に、型１とインプリント材３との界面に生じる応力が低減し、パターンの歪みによる欠陥を減少させることができる。また、型及び基板の変形による破損や、基板の基板保持部からの脱落を防止する効果も第１実施形態と同様である。 In the present embodiment, the steps from bringing the mold 1 into contact with the imprint material 3 on the substrate 2 until the imprint material 3 is cured are the same as those in the first embodiment. After that, when the mold is released, as shown in FIG. 6A, the drive unit 12 separates the mold 1 from only one end of the substrate 2. Then, the mold 1 and the imprint material 3 start peeling from one end of the substrate 2. Further, as the distance between the mold 1 and the substrate 2 is increased, the mold 1 and the imprint material 3 are peeled from one end to the other end where the peeling is started. At this time, the peeling position between the mold 1 and the imprint material 3 becomes a linear shape parallel to the center line of the circular substrate 2. When the suction region of the substrate holding portion 5 immediately below the peeling position is weakened compared to the other suction regions, the vicinity of the peeling position of the substrate 2 rises from the substrate holding portion 5 as shown in FIG. 6B. As a result, as in the first embodiment, the stress generated at the interface between the mold 1 and the imprint material 3 can be reduced, and defects due to pattern distortion can be reduced. Further, the effect of preventing damage due to deformation of the mold and the substrate and dropping of the substrate from the substrate holding portion is the same as that of the first embodiment.

＜第３実施形態＞
図８に、第３実施形態に係る基板保持部５を型１側から見た図である。本実施形態のインプリント装置の他の構成は、上述した第１又は第２実施形態と同様である。図８に示されるように、基板２と接する面には、格子状に区画された複数の吸着領域が形成されている。なお、複数の吸着領域の区分形状は格子状に限定されるものではなく、その形状は問わない。この基板保持部５も、図３と同様な構成により、複数の吸着領域における吸着力をそれぞれ独立に制御可能である。 <Third Embodiment>
FIG. 8 is a view of the substrate holding portion 5 according to the third embodiment as viewed from the mold 1 side. Other configurations of the imprinting apparatus of this embodiment are the same as those of the first or second embodiment described above. As shown in FIG. 8, a plurality of adsorption regions divided in a grid pattern are formed on the surface in contact with the substrate 2. The division shape of the plurality of adsorption regions is not limited to a grid pattern, and the shape is not limited. The substrate holding portion 5 also has a configuration similar to that shown in FIG. 3, and can independently control the suction forces in the plurality of suction regions.

本実施形態では、型１を基板２上のインプリント材３に接触させ、インプリント材３を硬化させた後、離型を行う。このとき、型１は、第１実施形態と同様、基板２上のインプリント材３から、基板２の最外周より剥離し始め、離型が進むに従って、剥離位置は環状で基板２の外周より中心へと移動する。これに同期して、図８の斜線部の吸着領域のように、基板保持部５の剥離位置の直下で環状を形成する吸着領域の吸着力を弱めていく。これにより、基板２が基板保持部５から浮き上がるのは、剥離位置の近傍のみとなる。以上により、第１実施形態と同様に、パターンの歪みによる欠陥を減少させる効果、及び、型、基板の変形による破損や基板がチャックより脱落するという問題を抑制できる。 In the present embodiment, the mold 1 is brought into contact with the imprint material 3 on the substrate 2, the imprint material 3 is cured, and then the mold is released. At this time, as in the first embodiment, the mold 1 starts to peel off from the imprint material 3 on the substrate 2 from the outermost circumference of the substrate 2, and as the mold release progresses, the peeling position is annular and from the outer circumference of the substrate 2. Move to the center. In synchronization with this, the suction force of the suction region forming an annular shape immediately below the peeling position of the substrate holding portion 5 is weakened as in the suction region of the shaded portion in FIG. As a result, the substrate 2 is lifted from the substrate holding portion 5 only in the vicinity of the peeling position. As described above, as in the first embodiment, the effect of reducing defects due to pattern distortion, and the problems of damage due to deformation of the mold and substrate and the problem that the substrate falls off from the chuck can be suppressed.

また、本実施形態において、第２実施形態と同様に、型１又は基板２の一端のみを引き離す離型を行った場合、型１とインプリント材３の剥離位置は、基板２の中心線に平行な線状になる。このとき、剥離位置の直下にある基板保持部５の線状の吸着領域の吸着力を弱めることで、第２実施形態と同様の効果が得られる。 Further, in the present embodiment, as in the second embodiment, when the mold 1 or the substrate 2 is released by pulling away only one end, the peeling position between the mold 1 and the imprint material 3 is located at the center line of the substrate 2. It becomes a parallel line. At this time, the same effect as that of the second embodiment can be obtained by weakening the suction force of the linear suction region of the substrate holding portion 5 immediately below the peeling position.

さらに、本実施形態では、基板保持部５の吸着力を弱める領域の組み合わせを任意に変えることができる。そのため、基板の全面一括でインプリントをする場合でも、基板の部分領域でインプリントする場合でも、同一の基板保持部で対応できるという利点がある。 Further, in the present embodiment, the combination of regions for weakening the suction force of the substrate holding portion 5 can be arbitrarily changed. Therefore, there is an advantage that the same board holding portion can be used regardless of whether imprinting is performed on the entire surface of the board or in a partial area of the board.

基板保持部５の吸着領域が型１のパターン領域の形状と相似形でない場合、離型力の分布に不均一性や、離型速度にムラを生じうる。そこで、駆動部１２により型１と基板２を平行に保つように制御しつつ離型を行う。また、離型させる際に、インプリント材と接触する型１のパターン領域の面積が徐々に減るのに伴い、駆動部１２が一定の力で制御するのではなく、離型速度が一定となるように制御を行ってもよい。このような制御を行うことで、離型時に生じる欠陥を抑制することが可能である。 When the suction region of the substrate holding portion 5 is not similar in shape to the shape of the pattern region of the mold 1, the distribution of the mold release force may be non-uniform and the mold release speed may be uneven. Therefore, the mold is released while being controlled by the drive unit 12 so as to keep the mold 1 and the substrate 2 parallel. Further, when the mold is released, the area of the pattern region of the mold 1 in contact with the imprint material is gradually reduced, and the drive unit 12 is not controlled by a constant force, but the mold release speed becomes constant. It may be controlled as follows. By performing such control, it is possible to suppress defects that occur at the time of mold release.

＜物品の製造方法の実施形態＞
本発明の実施形態における物品の製造方法は、例えば、半導体デバイス等のマイクロデバイスや微細構造を有する素子等の物品を製造するのに好適である。本実施形態の物品の製造方法は、上記のリソグラフィ装置（露光装置やインプリント装置、描画装置など）を用いて基板に原版のパターンを転写する工程と、かかる工程でパターンが転写された基板を加工する工程とを含む。更に、かかる製造方法は、他の周知の工程（酸化、成膜、蒸着、ドーピング、平坦化、エッチング、レジスト剥離、ダイシング、ボンディング、パッケージング等）を含む。本実施形態の物品の製造方法は、従来の方法に比べて、物品の性能・品質・生産性・生産コストの少なくとも１つにおいて有利である。 <Embodiment of manufacturing method of article>
The method for manufacturing an article according to the embodiment of the present invention is suitable for producing an article such as a microdevice such as a semiconductor device or an element having a fine structure. The method for manufacturing an article of the present embodiment includes a step of transferring a pattern of an original plate to a substrate using the above-mentioned lithography apparatus (exposure apparatus, imprint apparatus, drawing apparatus, etc.) and a substrate to which the pattern is transferred in such a step. Including the process of processing. Further, such a manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, flattening, etching, resist peeling, dicing, bonding, packaging, etc.). The method for producing an article of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

＜他の実施形態＞
本発明は、上述の実施形態の１以上の機能を実現するプログラムを、ネットワーク又は記憶媒体を介してシステム又は装置に供給し、そのシステム又は装置のコンピュータにおける１つ以上のプロセッサがプログラムを読出し実行する処理でも実現可能である。また、１以上の機能を実現する回路（例えば、ＡＳＩＣ）によっても実現可能である。 <Other embodiments>
The present invention supplies a program that realizes one or more functions of the above-described embodiment to a system or device via a network or storage medium, and one or more processors in the computer of the system or device reads and executes the program. It can also be realized by the processing to be performed. It can also be realized by a circuit (for example, ASIC) that realizes one or more functions.

１：型、２：基板、３：インプリント材、４：型保持部、５：基板保持部 1: Die, 2: Substrate, 3: Imprint material, 4: Die holding part, 5: Board holding part

Claims (7)

基板上の未硬化のインプリント材と型とを互いに接触させた状態で前記インプリント材を硬化させる装置であって、
前記基板を吸着する複数の吸着領域を有する基板保持部と、
前記複数の吸着領域のそれぞれにおける吸着力を制御する制御部と、
を有し、
前記複数の吸着領域は、吸着される基板の外周円と同心円状に区分されており、
前記制御部は、硬化した前記インプリント材から前記型を引き離す際に、前記型と前記インプリント材とが剥離された領域と前記型と前記インプリント材とが剥離されていない領域との境界の位置である剥離位置が前記基板の外側から中心に向かって移動するのに合わせて、前記同心円状に形成された前記複数の吸着領域のうち外周側の吸着領域から中心の吸着領域に向かって順次、吸着力を弱めていくとともに、各吸着領域において、当該吸着領域の吸着力を弱めてから、当該吸着領域の上で前記型と前記インプリント材との剥離が完了するものとして予め定められた時間が経過した後に、当該吸着領域の吸着力を強める
ことを特徴とする装置。 A device that cures the imprint material in a state where the uncured imprint material on the substrate and the mold are in contact with each other.
A substrate holding portion having a plurality of adsorption regions for adsorbing the substrate,
A control unit that controls the suction force in each of the plurality of suction regions,
Have,
The plurality of adsorption regions are divided into concentric circles with the outer peripheral circle of the substrate to be adsorbed.
When the mold is separated from the cured imprint material, the control unit is a boundary between a region where the mold and the imprint material are peeled off and a region where the mold and the imprint material are not peeled off. As the peeling position, which is the position of, moves from the outside of the substrate toward the center, the suction region on the outer peripheral side of the plurality of the suction regions formed concentrically toward the center It is predetermined that the adsorption force is sequentially weakened, and in each adsorption region, the adsorption force of the adsorption region is weakened, and then the separation between the mold and the imprint material is completed on the adsorption region. after time has elapsed, and wherein the <br/> that Ru strengthening the suction force of the suction region. 基板上の未硬化のインプリント材と型とを互いに接触させた状態で前記インプリント材を硬化させる装置であって、
前記基板を吸着する複数の吸着領域を有する基板保持部と、
前記複数の吸着領域のそれぞれにおける吸着力を制御する制御部と、
を有し、
前記複数の吸着領域は、吸着される基板の中心線に平行な複数の線によって区分されており、
前記制御部は、硬化した前記インプリント材から前記型を引き離す動作を実行している間に、前記型と前記インプリント材とが剥離された領域と前記型と前記インプリント材とが剥離されていない領域との境界の位置である剥離位置が前記基板の一端から他端に向かって移動するのに合わせて、前記複数の吸着領域のうち前記一端から前記他端に向かって順次、吸着力を弱めていくとともに、各吸着領域において、当該吸着領域の吸着力を弱めてから、当該吸着領域の上で前記型と前記インプリント材との剥離が完了するものとして予め定められた時間が経過した後に、当該吸着領域の吸着力を強める
ことを特徴とする装置。 A device that cures the imprint material in a state where the uncured imprint material on the substrate and the mold are in contact with each other.
A substrate holding portion having a plurality of adsorption regions for adsorbing the substrate,
A control unit that controls the suction force in each of the plurality of suction regions,
Have,
The plurality of adsorption regions are divided by a plurality of lines parallel to the center line of the substrate to be adsorbed.
While the control unit is executing the operation of pulling the mold away from the cured imprint material, the region where the mold and the imprint material are peeled off, the mold and the imprint material are peeled off. As the peeling position, which is the position of the boundary with the non-existing region, moves from one end to the other end of the substrate, the adsorption force of the plurality of adsorption regions is sequentially applied from one end to the other end. we intend weakened, in each adsorption zone, the weakening the suction force of the suction region, the predetermined time has elapsed as peeling of the mold on the suction region and the imprint material is complete after, and wherein the <br/> that Ru strengthening the suction force of the suction region. 基板上の未硬化のインプリント材と型とを互いに接触させた状態で前記インプリント材を硬化させる装置であって、
前記基板を吸着する複数の吸着領域を有する基板保持部と、
前記複数の吸着領域のそれぞれにおける吸着力を制御する制御部と、
を有し、
前記複数の吸着領域は、格子状に区分されており、
前記制御部は、硬化した前記インプリント材から前記型を引き離す動作を実行している間に、前記型と前記インプリント材とが剥離された領域と前記型と前記インプリント材とが剥離されていない領域との境界の位置である剥離位置が前記基板の外側から中心に向かって移動するのに合わせて、前記複数の吸着領域のうち基板の外周側の吸着領域から中心の吸着領域に向かって順次、吸着力を弱めていくとともに、各吸着領域において、当該吸着領域の吸着力を弱めてから、当該吸着領域の上で前記型と前記インプリント材との剥離が完了するものとして予め定められた時間が経過した後に、当該吸着領域の吸着力を強める
ことを特徴とする装置。 A device that cures the imprint material in a state where the uncured imprint material on the substrate and the mold are in contact with each other.
A substrate holding portion having a plurality of adsorption regions for adsorbing the substrate,
A control unit that controls the suction force in each of the plurality of suction regions,
Have,
The plurality of adsorption regions are divided in a grid pattern.
While the control unit is executing the operation of pulling the mold away from the cured imprint material, the region where the mold and the imprint material are peeled off, the mold and the imprint material are peeled off. As the peeling position, which is the position of the boundary with the non-existing region, moves from the outside of the substrate toward the center, the adsorption region on the outer peripheral side of the substrate among the plurality of adsorption regions moves toward the central adsorption region. In each adsorption region, the adsorption force of the adsorption region is weakened, and then the separation between the mold and the imprint material is completed on the adsorption region. after of time has elapsed, and wherein the <br/> that Ru strengthening the suction force of the suction region. 前記制御部は、硬化した前記インプリント材から前記型を引き離す際に、前記剥離位置の移動に同期して前記複数の吸着領域の吸着力を部分的に弱めることを特徴とする請求項１乃至３のいずれか１項に記載の装置。 The control unit is characterized in that when the mold is separated from the cured imprint material, the adsorption force of the plurality of adsorption regions is partially weakened in synchronization with the movement of the peeling position. The device according to any one of 3. 前記制御部は、硬化した前記インプリント材から前記型を引き離す際に、前記複数の吸着領域のうち、前記剥離位置の直下にある吸着領域の吸着力を、他の吸着領域よりも弱めることを特徴とする請求項１乃至３のいずれか１項に記載の装置。 When the mold is pulled away from the cured imprint material, the control unit makes the adsorption force of the adsorption region directly below the peeling position of the plurality of adsorption regions weaker than that of the other adsorption regions. The apparatus according to any one of claims 1 to 3, wherein the apparatus is characterized. 前記型は前記基板上の全面に供給されたインプリント材と接触し、前記基板上の全面に一括して前記インプリント材を硬化させることを特徴とする請求項１乃至５のいずれか１項に記載の装置。 Any one of claims 1 to 5, wherein the mold comes into contact with the imprint material supplied to the entire surface of the substrate and collectively cures the imprint material over the entire surface of the substrate. The device described in. 請求項１乃至６のいずれか１項に記載の装置を用いて、基板上に硬化したインプリント材のパターンを形成する工程と、
前記工程で前記パターンが形成された前記基板を加工する工程と、
を有することを特徴とする物品の製造方法。 A step of forming a pattern of a cured imprint material on a substrate by using the apparatus according to any one of claims 1 to 6.
The step of processing the substrate on which the pattern is formed in the step and
A method of manufacturing an article, which comprises having.
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