JP6644115B2 - Mounting device and mounting method - Google Patents

Description

  The present invention relates to a mounting device and a mounting method.

  There are mounting devices and mounting methods in which semiconductor chips are bonded on a circuit board or a plurality of semiconductor chips are sequentially stacked and bonded. These mounting apparatuses and mounting methods use a TSV (through silicon via) technique after aligning the position of a circuit board or a semiconductor chip as an object to be bonded in a lower layer and a semiconductor chip as an object to be bonded in an upper layer. Joining is known. 2. Description of the Related Art In recent years, a so-called wireless TSV structure in which a signal is wirelessly transmitted using a short-range wireless communication between a stacked object to be joined and an object to be joined in a lower layer has been expanding. When the TSV is used or the short-range wireless communication is used, the mounting method is such that the position of the lower-layer object to be joined and the position of the upper-layer object to be joined are aligned before joining.

  Patent Literature 1 and Patent Literature 2 disclose a lower visual field portion for recognizing a position of a wafer or a wiring substrate which is a lower object to be bonded and an upper visual field portion for recognizing a position of a semiconductor chip which is an upper object to be bonded. There is described a mounting apparatus for recognizing the position of a lower-layer wafer or wiring board and an upper-layer semiconductor chip by using an upper and lower two-view camera having the above, and performing alignment and joining them. An alignment mark is provided on each of the wafer or the wiring substrate and the semiconductor chip in the upper and lower visual field directions of the upper and lower two visual field cameras.

  Patent Literature 3 discloses a mounting device including a visible light camera that recognizes the position of a wiring substrate that is a lower-layer object to be bonded and an infrared camera that recognizes a semiconductor chip that is an upper-layer object to be bonded. I have. In the infrared camera, the alignment mark on the front surface side is recognized by transmitting through the inside from the back surface side of the semiconductor chip facing the wiring substrate. In other words, this mounting device performs positioning and joining based on the results recognized by the visible light camera and the near infrared camera.

JP 2017-183628 A JP 2017-183451 A JP 2013-93509 A

  The mounting apparatuses described in Patent Literature 1 and Patent Literature 2 each have an upper and lower two-view camera that recognizes a wafer or a circuit board, which is an object to be bonded in a lower layer, and recognizes a semiconductor chip in an upper layer. Since the upper and lower two-view camera is a visible light camera, for example, the target cannot be recognized in an object to be joined which is disposed inside where the target corresponding to the alignment mark to be recognized cannot be directly viewed. There is a problem that they cannot be matched.

  Further, in the mounting device described in Patent Document 3, one of the cameras installed for alignment is capable of recognizing a target through a semiconductor chip. However, when the target is placed inside the object to be welded and cannot be directly viewed with the other visible light camera, the target cannot be recognized and the upper and lower layers cannot be aligned. There is a problem that.

  Therefore, the present invention has been made in order to solve such a problem, and the object to be joined, in which the target is arranged at a visible position, and the object to be joined, in which the target is not directly observable. It is intended to realize a mounting apparatus and a mounting method capable of recognizing a target of an upper layer object to be joined and a target of a lower layer object to be joined together, and capable of joining a plurality of layers of objects to be joined. It is.

  [1] A mounting device of the present invention is a mounting device for stacking and bonding a lower layer object to be bonded and an upper layer object to be bonded, and a bonding stage for holding the lower layer object to be bonded; A vertical tool having a bonding tool for holding the upper object to be bonded, a lower layer recognizing means for recognizing the target of the lower object to be bonded, and an upper layer recognizing means for recognizing the target of the upper object to be bonded; A two-view recognition optical system, wherein the upper and lower two-view recognition optical system further includes a first illumination unit for the lower layer target to be bonded and a target for the upper layer target to be bonded. , And the first lighting unit and the second lighting unit both have two types of light sources having different spectral wavelength ranges.

  The mounting device of the present invention has a first lighting unit and a second lighting unit, and both the first lighting unit and the second lighting unit have two types of light sources having different spectral wavelength ranges. I have. If one of the two types of light sources is in the visible light wavelength range and the other is in the near-infrared wavelength range, it is possible to recognize a target placed at a visible position of the workpiece in the visible light wavelength range. In the near-infrared wavelength region, it is possible to recognize a target placed inside the object to be joined. Therefore, it is possible to recognize both targets, that is, the target to be joined in which the target is placed at a position visible by the upper and lower two-view recognition optical system and the target to be joined in which the target is placed inside that cannot be directly viewed. It becomes possible to join a plurality of layers of objects to be joined. The lower-layer recognition unit and the upper-layer recognition unit are configured by an optical system such as a recognition camera described later.

  In addition, since the upper and lower two-view recognition optical system has two types of light sources having different spectral wavelength ranges, if optical adjustment such as luminance is performed at the time of initial operation, the target of the object to be bonded is disposed on the surface. Each time the arrangement of the target is changed, for example, whether the target is placed inside or inside, the light source is replaced with a light source having a spectral wavelength range corresponding to each target, and optical adjustment such as luminance does not have to be performed each time. Therefore, a single mounting apparatus can perform bonding of a plurality of layers, such as two, three, or four layers of objects to be bonded having different target arrangements.

  Here, the target is a metal part such as an electrode arranged on the surface or inside of the object to be joined, and includes an upper object (eg, a semiconductor chip) and a lower object (eg, a wiring board). In electronic components that transmit signals wirelessly using short-range wireless communication, a coil antenna or the like is used. In the embodiments described below, a target corresponding to an alignment mark and having a function such as a coil antenna is described as a target.

  [2] In the mounting apparatus of the present invention, both the first lighting unit and the second lighting unit are used when the target is on the light irradiation side surface of the object to be joined, or when the target is It is preferable to have an optical path conversion unit that switches to the light source having a different spectral wavelength range according to the case where the light source is inside the object to be joined.

  As described above, both the first lighting unit and the second lighting unit have two types of light sources having different spectral wavelength ranges. Therefore, by switching to a light source having an appropriate spectral wavelength range in accordance with the arrangement of the target of the object to be welded, the configuration in which the target is arranged at a position where the object to be welded can be visually recognized, It is possible to recognize both targets of the configuration arranged inside which cannot be visually recognized.

  [3] In the mounting device of the present invention, of the two types of light sources, the first light source has a spectral wavelength range of 570 nm to 680 nm, and a peak wavelength range of 620 nm to 630 nm. Is preferred.

  Since the spectral wavelength range of the first light source is the visible light wavelength range, it is possible to recognize the reflected light from the target arranged on the visible surface of the object to be joined. That is, the target can be recognized.

  [4] In the mounting device of the present invention, of the two types of light sources, the second light source has a spectral wavelength range of 1000 nm to 1600 nm and a peak wavelength range of 1050 nm to 1200 nm. Is preferred.

  As will be described in detail in the embodiments, when the object to be bonded is a semiconductor chip, an element portion including a target is formed on a silicon substrate. The spectral transmittance of silicon sharply increases when the spectral wavelength range exceeds 1000 nm. For example, in a semiconductor device component (hereinafter, referred to as a semiconductor chip) in which a device to be bonded has a device portion including a target on a silicon substrate, a second wavelength range of 1000 nm to 1600 nm is used. When the light source is used, the light transmitted through the silicon substrate or the element portion and reflected by the target can be recognized by the lower-layer recognition unit and the upper-layer recognition unit. It should be noted that the spectral transmittance of the element portion is also equivalent to that of silicon.

  [5] In the mounting apparatus according to the aspect of the invention, the upper and lower two-view recognition optical system further includes a first recognition camera for an upper view and a second recognition camera for a lower view, and the first recognition camera and the second recognition camera. It is preferable that both the two recognition cameras have an effective relative spectral sensitivity in a spectral wavelength range of 400 nm to 1600 nm.

  The first recognition camera and the second recognition camera are, for example, CCD cameras. Here, the effective relative spectral sensitivity is defined as spectral sensitivity having a resolution that can be recognized as a target by each recognition camera. Since the first recognition camera and the second recognition camera have an effective relative spectral sensitivity in a spectral wavelength range of 400 nm to 1600 nm, the spectral wavelength range of the first light source is 570 nm to 680 nm, and the spectral wavelength range of the second light source is. The target can be recognized in the range of 1000 nm to 1600 nm.

  [6] In the mounting apparatus of the present invention, the bonding stage has a stage Y-axis drive mechanism and a stage X-axis drive mechanism for moving the lower-layer-side workpiece in the horizontal direction. A vertical drive mechanism for raising and lowering the object to be joined in the upper layer and a θ drive mechanism for rotating horizontally, and the upper and lower two-view recognition optical system further includes the upper and lower fields of view for each of the targets. It is preferable to have an optical system Y-axis drive mechanism for moving to a recognizable position and a non-recognizable position.

  With such a configuration of the mounting apparatus, the upper and lower target objects to be bonded are recognized by the upper and lower two-view recognition optical system, and based on the recognition result, the upper target and the lower target are recognized. After the alignment with the above, it is possible to join the upper layer side object to the lower layer side object.

  [7] A mounting method according to the present invention is a mounting method in which objects to be bonded are stacked and bonded using the mounting device according to any one of [1] to [6], wherein the object to be bonded in the lower layer is provided. A step of switching to the light source having a different spectral wavelength range in accordance with an arrangement of the target of the upper-layer object to be bonded; a step of adsorbing the upper-layer object to be bonded to the bonding tool; Adsorbing the object to be bonded to the bonding stage, moving the upper field of view and the lower field of view to a position where the upper object to be bonded and the lower object to be bonded can be recognized, and Recognizing the target of the object to be bonded, recognizing the target of the object to be bonded in the lower layer, and aligning the object to be bonded in the upper layer with the object to be bonded in the lower layer. And alignment After including the step of retracting said on the field portion and the lower viewing portion to the non-recognition position, and joining the top layer of the bonding target in the bonded object of the lower layer, and characterized in that.

  According to the mounting method of the present invention, recognizing the targets of the upper and lower layers to be bonded by switching the light source in accordance with the arrangement of the target of the upper layer to be bonded and the target of the lower layer to be bonded. Becomes possible. Then, based on the recognition result, after positioning the upper-layer workpiece and the lower-layer workpiece, if the upper-layer workpiece and the lower-layer workpiece are bonded, the upper-layer workpiece is joined to the lower-layer workpiece. In both the configuration where the target is placed at a position where the object can be visually recognized and the configuration where the target is placed inside that is not directly visible, it is possible to recognize the position of both the upper and lower layer targets and perform alignment and join. It becomes possible.

  In addition, since it is possible to switch between two types of spectral wavelength ranges, the object to be bonded having the target disposed on the surface, and the light source corresponding to each of the objects to be bonded having the target disposed therein are replaced with light sources. It is not necessary to adjust the brightness and the like each time. Therefore, it is possible to perform bonding of a plurality of layers, such as two, three, or four or more layers of objects to be bonded having different positions of the targets, with one mounting apparatus.

FIG. 1 is a front view illustrating a schematic configuration of a mounting apparatus 1 according to an embodiment. FIG. 2 is a plan view of the upper and lower two visual field units 12 and the substrate holding unit 13 as viewed from above in FIG. FIG. 3 is a diagram illustrating a configuration of an upper and lower two-view recognition optical system 12. FIG. 3 is a partial cross-sectional view showing an example of a wiring board 2 in an enlarged manner. FIG. 2 is a partial cross-sectional view showing an example of a semiconductor chip 3 in an enlarged manner. 4 is a graph showing the relationship between the spectral wavelength range and the spectral transmittance of silicon. 5 is a graph illustrating a relationship between a spectral wavelength range of a first light source 52 and a relative intensity. 9 is a graph showing a relationship between a spectral wavelength range of a second light source 53 and a relative intensity. 6 is a graph showing a relationship between a spectral wavelength range and a relative sensitivity of the first recognition camera 17 and the second recognition camera 18. FIG. 4 is a process flowchart showing main processes of a first example of the mounting method according to the embodiment; It is explanatory drawing which represents the main process of a 1st example typically. It is a process flow figure showing the main process of the 2nd example of the mounting method. It is explanatory drawing which represents the main process of a 2nd example typically.

  Hereinafter, a mounting apparatus 1 and a mounting method according to an embodiment of the present invention will be described with reference to FIGS.

[Configuration of Mounting Device 1]
FIG. 1 is a front view showing a schematic configuration of a mounting apparatus 1 according to the embodiment. FIG. 2 is a plan view of the upper and lower two visual field unit 12 and the substrate holding unit 13 as viewed from above in FIG. FIG. 2 is a layout diagram showing the arrangement of main components. In the following description, the left-right direction in FIG. 1 is described as a Y direction or a Y-axis, the depth direction in the drawing is described as an X-direction or an X-axis, and the vertical direction in the drawing is described as a Z-axis. The mounting apparatus 1 is an apparatus for laminating and joining electronic components such as a wiring board, a semiconductor chip or a wafer as an object to be joined. In FIG. 1, as an example, among the objects to be joined, a lower object to be joined is referred to as a wiring board 2, and an upper object to be joined is referred to as a semiconductor chip 3.

  The mounting apparatus 1 has a base 11 arranged on a base frame 10 and recognizes, on the base 11, the wiring substrate 2 as a lower layer object to be bonded and the semiconductor chip 3 as an upper layer object to be bonded. It has an upper and lower two-view recognition optical system 12, a substrate holding unit 13 for holding the wiring substrate 2, and a bonding head 14 disposed above the substrate holding unit 13 for sucking and holding the semiconductor chip 3. The upper and lower two visual field recognition optical system 12 has a lower visual field section 15 for recognizing the wiring board 2 and an upper visual field section 16 for recognizing the semiconductor chip 3, and further inputs an image from each of the lower visual field section 15 and the upper visual field section. It has a first recognition camera 17 and a second recognition camera 18. The first recognition camera 17 and the second recognition camera 18 are CCD cameras.

  The lower visual field section 15, the upper visual field section 16, and the recognition cameras 17 and 18 are configured as a recognition camera unit 19 so as to be movable as one body in the Y direction and the X direction. The recognition camera unit 19 has an optical system Y-axis drive mechanism 20 that moves the recognition camera unit 19 in the Y direction and an optical system X-axis drive mechanism 21 that moves in the X direction. The optical system Y-axis drive mechanism 20 moves the lower field of view 15 and the upper field of view 16 on a line extending from the optical axis P connecting the wiring board 2 and the semiconductor chip 3 and a position retracting from the optical axis P (in FIG. 15) and (16). FIG. 2 shows a position where the lower visual field 15 and the upper visual field 16 are retracted from the optical axis P. The upper and lower two-view recognition optical system 12 further includes a pair of a first illumination unit 22 and a second illumination unit 23 (see FIG. 3 for details).

  As shown in FIG. 2, light in a predetermined spectral wavelength range emitted from the first illumination unit 22 is introduced from an optical fiber 24 and passes through a first beam splitter 25, a first prism 26, and a third prism 28. The semiconductor chip 3 in the upper layer is irradiated through the optical path window 32 serving as the field of view 15. The optical path of this light is represented by Ld. On the other hand, light in a predetermined spectral wavelength range emitted from the illumination unit 23 is introduced from the optical fiber 27, passes through the second beam splitter 29, the second prism 30, and the third prism 28, and becomes an optical path window 31 serving as the lower visual field 15. And irradiates the lower wiring substrate 2. The optical path of this light is represented by Lu. FIG. 2 illustrates the optical path window 32 of the upper visual field section 16. An optical system including the first recognition camera 17, the first beam splitter 25, the first prism 26, and the third prism 28 is referred to as an upper layer recognition unit. An optical system including the second recognition camera 18, the second beam splitter 29, and the second prism 28 is referred to as a lower layer recognition unit. The configuration and operation of the upper and lower two-view recognition optical system 12 will be described later in more detail with reference to FIG.

  The substrate holding unit 13 has a stage Y-axis drive mechanism 35 and a stage X-axis drive mechanism 36, which are stage drive mechanisms, on the base 11, and the lowermost layer of the object to be bonded is mounted on the stage X-axis drive mechanism 36. A bonding stage 37 for adsorbing and holding a certain wiring board 2 is arranged. Since the examples shown in FIGS. 1 and 2 have a two-layer configuration of the wiring board 2 and the semiconductor chip 3, the wiring board 2 is the lowermost layer to be bonded, and the upper layer is to be bonded to the semiconductor chip 3 to be bonded. Is the object to be joined in the lower layer.

  The bonding head 14 is fixed to a frame 41 extending over a support 40 fixed to both sides of the substrate holding unit 13 in the X direction. A bonding tool 42 for sucking and holding the semiconductor chip 3 is provided at a lower end portion of the bonding head 14. The bonding tool 42 is fixed to a bonding tool holder 43, and the bonding tool holder 43 further includes a holder holding section 44. It is fixed to. The bonding head 14 has a vertical drive mechanism 45 that raises and lowers the upper semiconductor chip 3 with respect to the wiring board 2 and a θ drive mechanism 46 that rotates the semiconductor chip 3 in a horizontal plane. The vertical drive mechanism 45 has a function of pressing the semiconductor chip 3 against the wiring board 2. A load cell 47 is arranged between the bonding tool holder 43 and the holder holder 44. The load cell 47 is provided to appropriately control the pressing force when joining the semiconductor chip 3 to the wiring board 2. drive mechanism 46 has a function of adjusting the horizontal attitude of semiconductor chip 3 to the horizontal attitude of wiring board 2. Subsequently, the configuration and operation of the upper and lower two-view recognition optical system 12 will be described with reference to FIG.

  FIG. 3 is a diagram showing the configuration of the upper and lower two-view recognition optical system 12. 3 (a) is a plan view, and FIG. 3 (b) is a side view of FIG. 3 (a) as viewed from the left side, showing the recognition camera unit 19. FIG. 3 is an explanatory diagram showing an arrangement of main components of the upper and lower two-view recognition optical system 12. The upper and lower two-view recognition optical system 12 includes a recognition camera unit 19, a first illumination unit 22 that irradiates light to the semiconductor chip 3 that is an upper object to be bonded, and the wiring board 2 that is a lower object to be bonded. And a second illumination unit 23 for irradiating the light with light.

  The first illumination unit 22 includes a first light source 52 and a second light source 53 having different spectral wavelength ranges, a reflection mirror 54, and an optical path conversion unit 55 for switching the position of the reflection mirror 54. The spectral wavelength range of the first light source 52 is a visible light wavelength range, and the spectral wavelength range of the second light source 53 is a near infrared wavelength range. The spectral wavelength ranges of the first light source 52 and the second light source will be described later with reference to FIGS. The optical path conversion unit 55 has a function of switching the position of the reflection mirror 54 between a position at which visible light emitted from the first light source 52 is reflected and a position at which near infrared light emitted from the second light source 53 is reflected. . That is, the optical path conversion unit 55 has a function of switching the spectral wavelength range of the emitted light to the visible light wavelength range or the near infrared wavelength range. FIG. 3A shows that the semiconductor chip 3 is irradiated with near-infrared light emitted from the second light source 53.

  Since the second lighting unit 23 has the same configuration as the first lighting unit 22, common parts are denoted by the same reference numerals as the first lighting unit 22, and detailed description will be omitted. In the second illumination unit 23, a reflection mirror 54 is arranged so that visible light emitted from the first light source 52 is irradiated and incident on the wiring board 2. The optical path conversion units 56 have the same configuration as the optical path conversion unit 55, but are controlled so as to be independently driven when selecting a spectral wavelength range. The reflection mirror 54 is formed with a coating such as Al or Cu having high reflection characteristics in a spectral wavelength range from a visible light wavelength range to a near infrared wavelength range.

  In the recognition camera unit 19, a first recognition camera 17 corresponding to the upper field of view 16 and a second recognition camera 18 corresponding to the lower field of view 15 are disposed in lens barrels 57 and 58, respectively. The first recognition camera 17 and the second recognition camera 18 can have the same specifications. The first beam splitter 25 is disposed on the left side of the lens barrel 57 in the figure, and the second beam splitter 29 is disposed on the left side of the lens barrel 58 in the figure. Although not shown, a first lens is disposed between the first beam splitter 25 and the first recognition camera 17, and a second lens is disposed between the second beam splitter 29 and the recognition camera 18. ing.

  The first prism 26 is disposed at the distal end of the lens barrel 57, the second prism 30 is disposed at the distal end of the lens barrel 58, and a third prism is disposed between the first prism 26 and the second prism 30. 28 are arranged. The first illumination unit 22 and the lens barrel 47 are connected by the optical fiber 24. On the other hand, the second illumination unit 23 and the lens barrel 58 are connected by the optical fiber 27.

  As shown in FIG. 3B, the wiring board 2 is disposed below the upper and lower two visual field recognition optical systems 12, that is, below the lower visual field section 15, and above the semiconductor chip 3 above the upper visual field section 16. Is arranged. The wiring board 2 is held by suction on a bonding stage 37. The bonding stage 37 is provided with a vacuum path 60 for suction. The semiconductor chip 3 is suction-held by the bonding tool 42. A vacuum path 61 is provided in the bonding tool 42. The wiring board 2 and the semiconductor chip 3 shown in FIG. 3 are illustrated in a simplified manner. Before describing the operation of the upper and lower two-view recognition optical system 12, the configurations of the wiring board 2 and the semiconductor chip 3 as objects to be joined will be described with reference to FIGS.

  FIG. 4 is a partial cross-sectional view showing an example of the wiring board 2 in an enlarged manner. The wiring board 2 is a rigid board, a flexible board, a wafer, or the like, and the target 66 is formed on the wiring board body 65. A wiring pattern (not shown) is formed on the wiring board 2, and the target 66 is a part of the wiring pattern. The target 66 does not protrude from the surface 65a of the wiring board main body 65. In this example, the surface of the target 66 is a light irradiation surface and serves as a light reflection surface. The number of the targets 66 varies depending on the number of the semiconductor chips 3 mounted on the wiring board 2. Further, in this example, since the back surface 65b side of the wiring board main body 65 is attracted by the bonding stage 37, the wiring board 2 is the lowermost object to be joined and the semiconductor chip 3 which is the upper object to be joined. Is the object to be joined in the lower layer.

  FIG. 5 is a partial cross-sectional view showing an example of the semiconductor chip 3 in an enlarged manner. Note that the semiconductor chip 3 shown in FIG. 5 is described with a different magnification in the thickness direction from the wiring board 2 shown in FIG. The semiconductor chip 3 has a device portion 68 formed on a silicon substrate 67, and a circuit device, a wiring pattern, and the like (not shown) and a target 69, which is one of these components, are formed on the device portion 68. The target 69 is formed inside the semiconductor chip 2 which cannot be seen from the outside. In this example, the surface of the target 69 on the side of the silicon substrate 67 is a light irradiation surface and serves as a light reflection surface. An adhesive layer 70 is formed on the back surface of the element portion 68 of the silicon substrate 67. As the adhesive layer 70, a thermosetting adhesive or a pressure-sensitive adhesive can be used. In this example, since the surface 68a of the element portion 68 is sucked by the bonding tool 42, the semiconductor chip 3 becomes an upper-layer object to be bonded to the lower-layer wiring board 2.

  Note that the target 66 on the wiring board 2 side and the target 69 on the semiconductor chip 3 side are metal parts of a part of a wiring pattern such as electrodes formed on the wiring board 2 and the semiconductor chip 3, and An electronic component that connects the upper semiconductor chip 3 by wireless communication using short-range wireless communication is a coil antenna. In this example, the targets 66 and 69 are used as alignment marks.

  Next, the operation of the upper and lower two-view recognition optical system 12 will be described with reference to FIG. Near-infrared light emitted from the second light source 53 of the first illumination unit 22 is reflected by the reflection mirror 54 in the X-axis direction as shown by a solid line in the drawing, and is irradiated on the first beam splitter 25. The near-infrared ray is reflected by the first beam splitter 25 in a direction parallel to the Y-axis, bent again by the first prism 26 in the X-axis direction, and further directed to the semiconductor chip 3 by the third prism 28. The near infrared rays irradiate the target 69 through the silicon substrate 67. The near-infrared ray is reflected by the target 69, passes through the third prism 28 and the first prism 26, passes through the first beep splitter 25, and reaches the first recognition camera 17 in a direction opposite to that at the time of incidence. In this manner, the first recognition camera 17 recognizes the target 69 of the semiconductor chip 3.

  On the other hand, the visible light emitted from the second light source 52 of the second illumination unit 23 is reflected in the X-axis direction by the reflection mirror 54 as shown by the dotted line, and is irradiated on the second beam splitter 29. The visible light is reflected by the second beam splitter 29 in a direction parallel to the Y-axis, is bent again by the second prism 30 in the X-axis direction, and further travels toward the wiring board 2 by the third prism 28. The visible light irradiates the target 66 of the wiring board 2. The visible light is reflected by the target 66, passes through the third prism 28 and the second prism 30, passes through the second beep splitter 29, and reaches the second recognition camera 18 in a direction opposite to that at the time of incidence. In this manner, the second recognition camera 18 recognizes the target 66 of the wiring board 2.

  Since the target 66 of the wiring board 2 and the target 69 of the semiconductor chip 3 are each recognized based on the same position reference, the target 66 recognized by the first recognition camera 17 and the target 66 recognized by the second recognition camera 18 are different. The displacement can be calculated by image processing. The image processing is performed by a control unit (not shown), and the control unit calculates the amount of displacement in the X direction and the Y direction and the amount of displacement of the angle θ with respect to the X axis or the Y axis, and corrects the amount of displacement (alignment). Do. After the positioning of the wiring board 2 and the semiconductor chip 3 in this manner, the two are joined. A mounting method using the mounting apparatus 1 will be described later with reference to FIGS.

  In a configuration in which the object to be bonded is disposed inside the target 69 to be recognized, which is not visible, like the semiconductor chip 3 described in FIG. 5, the irradiated light can pass through the silicon substrate 67. Must be in the spectral wavelength range. Therefore, a spectral wavelength range that can transmit through the silicon substrate 67 will be described with reference to FIG.

  FIG. 6 is a graph showing the relationship between the spectral wavelength range and the spectral transmittance of silicon. In FIG. 6, the horizontal axis represents the spectral wavelength (nm), and the vertical axis represents the spectral transmittance (ratio to the maximum spectral transmittance). As shown in FIG. 6, the spectral transmittance sharply increases when the spectral wavelength exceeds 1000 nm, and reaches 0.55 (55%) in a range from 1200 nm to 1600 nm. The region where the spectral wavelength range is 1000 nm to 1600 nm is the near infrared region. Therefore, if the spectral wavelength range of the second light source 53 is set in the range of 1000 nm to 1600 nm, the light can pass through the silicon substrate 67. The total thickness of the semiconductor chip 3 ranges from about 200 μm to 10 μm or less, and tends to be thin. The thickness of the silicon substrate 67 of the semiconductor chip 3 is about の of the total thickness. When the spectral wavelength range is in the visible light wavelength range (1000 nm or less), the light cannot pass through the silicon substrate 67. Therefore, an appropriate spectral wavelength range of the first light source 52 and the second light source 53 will be described with reference to FIGS.

  FIG. 7 is a graph showing the relationship between the spectral wavelength range of the first light source 52 and the spectral intensity. In FIG. 7, the horizontal axis represents the spectral wavelength (nm), and the vertical axis represents the relative intensity (ratio to the peak value). As shown in FIG. 7, the spectral characteristics of the first light source 52 preferably have a spectral wavelength range of 570 nm to 680 nm and a peak wavelength of 620 nm to 630 nm. Since the spectral wavelength range of the first light source 52 is the visible light wavelength range, the target 66 disposed on the visible surface of the wiring board 2 as the object to be bonded can be recognized.

  FIG. 8 is a graph showing the relationship between the spectral wavelength range of the second light source 53 and the spectral intensity. In FIG. 8, the horizontal axis represents the spectral wavelength (nm), and the vertical axis represents the relative intensity (ratio to the peak value). As shown in FIG. 8, the spectral characteristics of the second light source 53 preferably have a spectral wavelength range of 1000 nm to 1600 nm and a peak wavelength of 1050 nm to 1200 nm. Since the spectral wavelength range of the second light source 53 is a near-infrared wavelength range, light emitted from the second light source 53 is emitted from the silicon substrate 67 if the spectral wavelength range is 1000 nm or more, as described with reference to FIG. And the target 69 can be recognized. In addition, it has been confirmed that the spectral transmittance of the element section 68 is almost the same as that of the silicon substrate 67. The first recognition camera 17 and the second recognition camera 18 need to have sufficient spectral sensitivity in the spectral wavelength range of the first light source 52 and the second light source 53 described with reference to FIGS. . This will be described with reference to FIG.

  FIG. 9 is a graph illustrating the relationship between the spectral wavelength ranges of the first recognition camera 17 and the second recognition camera 18 and the relative sensitivity. In FIG. 9, the horizontal axis represents the spectral wavelength (nm), and the vertical axis represents the relative sensitivity (ratio to the peak value). As described with reference to FIGS. 7 and 8, the spectral wavelength range of the first light source 52 is 570 nm to 680 nm of the visible light wavelength range, and the spectral wavelength range of the second light source 53 is 1000 nm to 1600 nm of the near infrared wavelength range. It is. As shown in FIG. 9, both the first recognition camera 17 and the second recognition camera 18 having the same configuration can recognize the targets 66 and 69 in the spectral wavelength range of 570 nm to 680 nm and in the spectral wavelength range of 1000 nm to 1600 nm. Has relative sensitivity.

  In the mounting device 1 described above, the first lens, the second lens (both are not shown), the first beam splitter 25, the second beam splitter 29, the first prism 26, the second prism 30, and the third prism It is preferable to use an optical member having a high transmittance in a spectral wavelength range from visible light to near infrared light for an optical transmission component such as 28.

  The mounting apparatus 1 described above includes a bonding stage 37 that holds the wiring substrate 2 that is a lower bonding target, and an upper bonding target that is bonded to the wiring substrate 2 or the semiconductor chip 3A that is a lower bonding target. A bonding tool 42 for holding the semiconductor chip 3 as an object, a lower layer recognition means for recognizing a lower target 66 of the object to be bonded, an upper layer recognition means for recognizing a target 69 of the upper object to be bonded, And a two-view visual recognition optical system 12 having the following. The upper and lower two-view recognition optical system 12 further includes a first illumination unit 22 for a lower target 66 to be joined and a second illumination unit 23 for an upper target 69 to be joined. The first lighting unit 22 and the second lighting unit 23 both have a first light source 52 and a second light source 53 having different spectral wavelength ranges.

  If one first light source 52 of the two types of spectral wavelength ranges is a visible light wavelength range, and the other second light source 53 is a near-infrared wavelength range, in the visible light wavelength range, the lower layer which is the object to be bonded is formed. It is possible to recognize the target 66 arranged at a position where the wiring board 2 can be visually recognized. In the near-infrared wavelength region, it is possible to recognize the target 69 disposed inside the upper semiconductor chip 3 to be bonded. Therefore, it is possible to recognize the target in both the object to be joined in which the target 66 is arranged at a visible position and the object to be joined in which the target 69 is arranged inside which cannot be directly seen, and a multi-layer object to be joined is formed. An object can be joined.

  In addition, since the upper and lower two-view recognition optical system 12 has the first light source 52 and the second light source 53 having different spectral wavelength ranges, if optical adjustment such as luminance is performed at the time of the initial operation, it is possible to perform the bonding. Each time the position of the target changes, such as whether the target of the target is placed on the surface or inside, the light source is replaced with a light source having a spectral wavelength range corresponding to each target, and optical adjustment such as brightness is performed each time. You do not need to do it. Therefore, a single mounting apparatus 1 can join a plurality of layers such as two, three, or four or more objects to be joined having different target positions.

  Further, in the mounting apparatus 1, both the first lighting unit 22 and the second lighting unit 23 are used when the target 66 is on the light irradiation surface side of the object to be bonded (wiring board 2) or when the target 69 is used. Optical path conversion units 55 and 56 for switching between a first light source 52 and a second light source 53 having different spectral wavelength ranges corresponding to a case where the light source is inside the object to be bonded (semiconductor chip 3).

  Both the first lighting unit 22 and the second lighting unit 53 have a first light source 52 and a second light source 53 having different spectral wavelength ranges. Therefore, by switching to a light source having an appropriate spectral wavelength range in accordance with the arrangement of the target of the object to be welded, the configuration in which the target is arranged at a position where the object to be welded can be visually recognized, It is possible to recognize both targets having a configuration that is arranged inside which cannot be visually recognized.

  Further, among the two types of light sources, the spectral wavelength range of the first light source 52 is in the range of 570 nm to 680 nm, and the peak wavelength range is in the range of 620 nm to 630 nm. Since the spectral wavelength range of the first light source 52 is in the visible light wavelength range, it is possible to recognize the reflected light from the target 66 disposed on the visible surface of the wiring substrate 2 which is the lower object to be joined. It becomes possible. That is, the target 66 can be recognized.

  Further, among the two types of light sources, the spectral wavelength range of the second light source 53 is in the range of 1000 nm to 1600 nm, and the peak wavelength range is in the range of 1050 nm to 1200 nm. The spectral transmittance of silicon rises sharply when the spectral wavelength range exceeds 1000 nm, and when the second light source 53 having a spectral wavelength range of 1000 nm to 1600 nm is used, the silicon transmits through the silicon substrate 67 and is reflected by the target 69. It becomes possible for the first light to be recognized by the first recognition camera 17. Since the spectral transmittance of the element section 68 is equivalent to that of silicon, it is possible to recognize the target from both the silicon substrate 67 side and the element section 68 side.

  The upper and lower two-view recognition optical system 12 has a first recognition camera 17 for the upper view 16 and a second recognition camera 18 for the lower view 15, and both the first and second recognition cameras 17 and 18 are provided. Since the spectral wavelength range has an effective relative spectral sensitivity within the range of 400 nm to 1600 nm, the spectral wavelength range of the first light source 52 is 570 nm to 680 nm, and the spectral range of the second light source 53 is 1000 nm to 1600 nm. Makes it possible to recognize the target.

  The bonding stage 37 has a stage Y-axis driving mechanism 35 and a stage X-axis driving mechanism 36 for moving the wiring substrate 2 or the semiconductor chip 3A, which is an object to be bonded on the lower layer side, in the horizontal direction. Has a vertical drive mechanism 45 that raises and lowers the semiconductor chip 3 that is the object to be bonded in the upper layer, and a θ drive mechanism 46 that rotates horizontally along the upper surface of the bonding stage 37. The upper and lower two-view recognition optical system 12 further includes an optical system Y-axis drive mechanism 20 that moves the upper and lower fields 16 and 15 to a position where the lower target can be recognized and a position where the lower target cannot be recognized. .

  According to such a configuration, the upper and lower two-field recognition optical system 12 recognizes the targets of the objects to be joined on the upper layer side and the lower layer side, and then, based on the recognition result, the target on the upper layer side and the target on the lower layer side are recognized. After the alignment, the upper-side semiconductor chip 3 as the object to be bonded can be bonded to the wiring substrate 2 or the semiconductor chip 3A as the object to be bonded on the lower layer side.

[Implementation method]
Next, a mounting method using the mounting apparatus 1 will be described with reference to the drawings. An example in which a semiconductor chip 3 as an upper layer object to be bonded is joined to a wiring substrate 2 as a lower layer object to be bonded will be described as a first example.

  FIG. 10 is a process flow chart showing main steps of a first example of the mounting method according to the embodiment, and FIG. 11 is an explanatory diagram schematically showing main steps of the first example. FIG. 11 is an explanatory diagram showing a scale different from the actual scale. This will be described with reference to the process flow diagram shown in FIG. First, in the first illumination unit 22 and the second illumination unit 23, the spectral wavelength range of the light source corresponding to the target arrangement of the workpiece is switched (step S1). That is, one of the first light source 52 and the second light source 53 is selected. Specifically, in the first illumination unit 22, the position of the reflection mirror 54 is moved by the optical path conversion unit 55 onto the optical path of the second light source 53 in the near-infrared wavelength region. On the other hand, in the second illumination unit 23, the position of the reflection mirror 54 is moved by the optical path conversion unit 56 onto the optical path of the first light source 52 in the visible light wavelength range (the state shown in FIG. 3). This step is controlled by a program of the control device.

  Next, the upper semiconductor chip 3 is transported below the bonding tool 42 and sucked by the bonding tool 42 (step S2). In this step, the semiconductor chip 3 is transported from a chip tray (not shown) by a transporting device (not shown) so that the target 69 enters the area where the optical path window 32 is formed, and the bonding tool 42 is lowered and sucked.

  Next, the wiring substrate 2 in the lower layer is transported to and bonded to the bonding stage 37 (step S3). In this step, the bonding stage 37 transports and sucks the wiring substrate 2 from a substrate stocker (not shown) to a position where the wiring substrate 2 can be sucked. Next, the stage Y-axis driving mechanism 35 and the stage X-axis driving mechanism 36 are driven to move the wiring board 2 to a position where the second recognition camera 18 can recognize the wiring board 2, that is, the target 66 (step S4).

  Next, the optical system Y-axis drive mechanism 20 and the optical system X-axis drive mechanism 21 are driven, so that the upper visual field 16 and the lower visual field 15 can be recognized by the target 69 of the semiconductor chip 3 and the target 66 of the wiring board 2. To a new position (step S5). That is, the recognition camera unit 19 is moved so that the lower visual field 15 and the upper visual field 16 are arranged between the wiring board 2 and the semiconductor chip 3.

  Next, as shown in FIG. 11A, the target 69 of the semiconductor chip 3 is recognized by the first recognition camera 17 (Step S6), and then the target 66 of the wiring board 2 is recognized by the second recognition camera 18. (Step S7). The recognition camera unit 19 shown in FIG. 11A has been described with reference to FIGS. 3A and 3B, and a description thereof will be omitted. The same reference numerals as in FIG. 3 are used. The control unit calculates the direction and amount of the positional shift between the recognized target 69 and the target 66, and aligns the target 66 of the wiring board 2 with the target 69 of the semiconductor chip 3 based on the calculation result (step S <b> 8). . Positioning is sometimes referred to as correction. The displacement in the X-axis direction and the Y-axis direction is corrected by driving the stage Y-axis drive mechanism 35 and the stage X-axis drive mechanism 36, and the attitude (θ) with respect to the X axis or Y axis is determined by the bonding head 14. Is corrected by the θ drive mechanism 46 of FIG. When the target 66 of the wiring board 2 is larger than the target 69 of the semiconductor chip 3, if the target 69 is inside the target 66, it can be determined that the correction has been made.

  After the alignment is completed, the recognition camera unit 19 is moved by the optical system Y-axis drive mechanism 20, and the upper visual field 16 and the lower visual field 15 are retracted from the intersection area between the semiconductor chip 3 and the wiring board 2 (step S9). ).

  Next, as shown in FIG. 11B, the vertical movement mechanism 45 of the bonding head 14 is driven to move down the bonding tool 42 to press the semiconductor chip 3 against the wiring board 43 and join the semiconductor chip 3 with the adhesive layer 70 ( Step S10). The pressing force at the time of joining is appropriately controlled by the load cell 47. In a configuration in which one semiconductor chip 3 is bonded to the wiring board 2, the electronic component after bonding is removed (step S11), and the mounting process ends. After bonding the semiconductor chip 3 to the wiring board 2, the semiconductor chip can be further stacked and bonded. This will be described as a second example with reference to FIGS.

  FIG. 12 is a process flow chart showing main steps of the second example of the mounting method, and FIG. 13 is an explanatory diagram schematically showing main steps of the second example. FIG. 13 is an explanatory view showing a scale different from the actual scale. As shown in FIG. 13, the second example is such that the semiconductor chip 3 is further joined to the above-described first example (see FIG. 11) in which the semiconductor chip 3 is joined to the wiring board 2. Therefore, the lowermost object to be joined is referred to as the wiring board 2, and the object to be joined joined to the wiring board 2 is referred to as the semiconductor chip 3 </ b> A as the lower object to be joined, and the upper layer further joined to the semiconductor chip 3 </ b> A. Is referred to as a semiconductor chip 3B. This will be described with reference to the process flow diagram shown in FIG.

  First, in the first illumination unit 22 and the second illumination unit 23, the spectral wavelength range of the light source corresponding to the target arrangement of the workpiece is switched (step S1). That is, one of the first light source 52 and the second light source 53 is selected. Although illustration is omitted, description will be given with reference to FIG. In the first illumination unit 22, the position of the reflection mirror 54 is moved by the optical path conversion unit 55 onto the optical path of the second light source 53 in the near infrared wavelength range. On the other hand, also in the second illumination unit 23, the position of the reflection mirror 54 is moved by the optical path conversion unit 56 onto the optical path of the second light source 53 in the near infrared wavelength range.

  Next, the upper semiconductor chip 3B is transported below the bonding tool 42 and sucked by the bonding tool 42 (step S2). In this step, as in the first example, the semiconductor chip 3B is transported from a chip tray (not shown) by a transporting device (not shown) so that the target 69A enters the range where the optical path window 32 is formed, and is sucked by the bonding tool 42.

  Next, the wiring board 2 to which the semiconductor chip 3A has been joined is transported to and bonded to the bonding stage 37 (Step S3). In this step, as in the first example, the wiring substrate 2 is transported and sucked from a substrate stocker (not shown) to a position where the bonding stage 37 can be sucked by a transfer device such as a robot arm. Next, the stage Y-axis drive mechanism 35 and the stage X-axis drive mechanism 36 are driven, and the second recognition camera 18 moves to a position where the lower semiconductor chip 3A, that is, the target 66 can be recognized (step S4).

  Next, the optical system Y-axis drive mechanism 20 and the optical system X-axis drive mechanism 21 are driven so that the upper visual field 16 and the lower visual field 15 can be recognized by the target 69 of the semiconductor chip 3A and the target 69A of the semiconductor chip 3B. To a new position (step S5). That is, the recognition camera unit 19 is moved so that the lower visual field 15 and the upper visual field 16 are arranged between the semiconductor chip 3A and the semiconductor chip 3B. Although FIG. 13 shows a small gap between the lower visual field 15 (recognition camera unit 19) and the semiconductor chip 3A, actually, two or more layers are formed on the semiconductor chip 3B after bonding. Has a gap that can be stacked as three layers.

  Next, as shown in FIG. 13A, the target 69A of the semiconductor chip 3B as an object to be bonded in the upper layer is recognized by the first recognition camera 17 (step S6), and then the target of the lower semiconductor chip 3A is recognized. 69 is recognized by the second recognition camera 18 (step S7). The recognition camera unit 19 shown in FIG. 13A has been described with reference to FIGS. The same reference numerals as in FIG. 3 are used. The control unit calculates the direction and amount of displacement of the recognized target 69A and target 69B, and performs alignment between the target 69 of the semiconductor chip 3A and the target 69A of the semiconductor chip 3B based on the calculation result (step S8). . The displacement in the X-axis direction and the Y-axis direction is corrected by driving the stage Y-axis drive mechanism 35 and the stage X-axis drive mechanism 36, and the attitude (θ) with respect to the X axis or the Y axis is determined by the bonding head 14. Is corrected by the θ drive mechanism 46 of FIG. When the target 69 of the semiconductor chip 3A is larger than the target 69A of the semiconductor chip 3B, if the target 69A is inside the target 69, it can be determined that the correction has been made.

  After the alignment is completed, the recognition camera unit 19 is moved by the optical system Y-axis drive mechanism 20, and the upper visual field 16 and the lower visual field 15 are retracted from the intersection area between the semiconductor chip 3A and the semiconductor chip 3B (step S9). ).

  Next, as shown in FIG. 13B, the vertical movement mechanism 45 of the bonding head 14 is driven to lower the bonding tool 42 to press the semiconductor chip 3B against the semiconductor chip 3B, and join the semiconductor chip 3B with the adhesive layer 70 (step). S10). The pressing force at the time of joining is appropriately controlled by the load cell 47. In a configuration in which one semiconductor chip 3B is bonded to the semiconductor chip 3A bonded to the wiring board 2, the electronic component after bonding is removed (step S11), and the mounting process ends. However, in a configuration in which another semiconductor chip 3 is further laminated on and bonded to the semiconductor chip 3B after bonding, steps S2 to S10 are repeated, and when the predetermined number of semiconductor chips 3 have been bonded, the material is removed.

  In the first example of the mounting method described above, the arrangement of the target 69 of the semiconductor chip 3 as the upper-layer target and the target 66 of the wiring substrate 2 as the lower-layer target, that is, the target 66 is visible. In a configuration in which the target 69 is not visible, the first light source 52 having a visible light wavelength range and the second light source 53 having a near-infrared wavelength range are switched to form an upper layer. The target 69 of the semiconductor chip 3 and the target 66 of the lower wiring board 2 can be recognized. Then, based on the recognition result, the semiconductor chip 3 and the wiring board 2 are aligned and then joined. Therefore, in both the configuration in which the target 66 is disposed at a position where the target to be welded can be visually recognized and the configuration in which the target 69 is disposed inside that is not directly visible, the positions of both the upper layer side target and the lower layer side target 66 are recognized. And alignment can be performed.

  A second example of the mounting method is a mounting method in which a semiconductor chip 3 (this is referred to as a lower semiconductor chip 3A) is bonded to the wiring board 2 and a semiconductor chip 3B is further laminated and bonded. In other words, the wiring substrate 2 is the lowermost object to be joined, the semiconductor chip 3A is the lower object to be joined, and the semiconductor chip 3B is the upper object to be joined. Each of the semiconductor chips 3A and 3B has a target 69, 69A disposed at a position where the target 69, 69A cannot be visually recognized from the outside. Therefore, the targets 69, 69A are irradiated with light from the second light source 53 in the near-infrared wavelength range. 69A can be recognized by the first recognition camera 17 and the second recognition camera 18. According to the mounting method of the second example, it is possible to further join the semiconductor chip to the upper layer of the semiconductor chip 3B.

  In addition, since it is possible to switch between two types of spectral wavelength ranges, the object to be bonded where the target is disposed on the surface and the light source corresponding to each of the objects to be bonded where the target is disposed inside are replaced with light sources. It is not necessary to make optical adjustments such as brightness each time. Therefore, in one mounting apparatus 1, a configuration in which both targets of the lower layer and the upper layer to-be-bonded objects are disposed at a visible position, or a configuration in which both targets are not directly visible. Can be aligned. Further, it is possible to join a plurality of layers such as two, three, or four layers of objects to be joined having different positions of the targets.

  It should be noted that the present invention is not limited to the above-described embodiment, but includes modifications and improvements as long as the object of the present invention can be achieved. For example, in the above-described embodiment, the second light source 53 in the near-infrared wavelength region transmitting through the silicon substrate 67 is used. It is possible to use a light source having a wavelength range other than the near infrared wavelength range.

  DESCRIPTION OF SYMBOLS 1 ... Mounting apparatus, 2 ... Wiring board (lowest layer object to be joined), 3, 3A, 3B ... Semiconductor chip, 12 ... Upper and lower two-view recognition optical system, 15 ... Lower view part, 16 ... Upper view part, 17 ... first recognition camera, 18 ... second recognition camera, 19 ... recognition camera unit, 20 ... optical system Y-axis drive mechanism, 22 ... first lighting unit, 23 ... second lighting unit, 24, 27 ... optical fiber, 25 first beam splitter, 26 first prism, 28 third prism, 29 second beam splitter, 30 second prism, 31, 32 optical path window, 35 Y-axis drive mechanism, 36 stage X-axis drive mechanism, 37 bonding stage, 42 bonding tool, 45 vertical drive mechanism, 46 θ drive mechanism, 52 first light source, 53 second light source, 54 reflecting mirror, 55, 56 Light path Conversion unit, 66, 69, 69A ... target

Claims (6)

A mounting device for laminating and joining a lower layer object to be joined and an upper layer object to be joined,
A bonding stage for holding the lower layer object to be bonded,
A bonding tool that holds the object to be joined in the upper layer,
An upper and lower two-view recognition optical system having a lower-layer recognition unit for recognizing the target of the lower-layer object to be joined and an upper-layer recognition unit for recognizing the target of the upper-layer object to be joined;
Has,
The upper and lower two-view recognition optical system further includes a first illumination unit for a target of the lower-layer object to be bonded and a second illumination unit for a target of the upper-layer object to be bonded,
The first lighting unit and the second lighting unit both have two types of light sources having different spectral wavelength ranges ,
Both the first lighting unit and the second lighting unit correspond to the case where the target is on the light irradiation side surface of the object to be welded, or the case where the target is inside the object to be welded. Having an optical path conversion unit that switches to the light source having a different spectral wavelength range,
A mounting device, characterized in that: The mounting device according to claim 1 ,
Of the two types of light sources, the first light source has a spectral wavelength range of 570 nm to 680 nm, and a peak wavelength range of 620 nm to 630 nm.
A mounting device, characterized in that: The mounting device according to claim 1 ,
Of the two types of light sources, the spectral wavelength range of the second light source is in the range of 1000 nm to 1600 nm, and the peak wavelength range is in the range of 1050 nm to 1200 nm.
A mounting device, characterized in that: The mounting device according to any one of claims 1 to 3 ,
The upper and lower two-view recognition optical system further includes a first recognition camera for an upper view and a second recognition camera for a lower view,
Both the first recognition camera and the second recognition camera have an effective relative spectral sensitivity within a spectral wavelength range of 400 nm to 1600 nm.
A mounting device, characterized in that: The mounting device according to any one of claims 1 to 4 ,
The bonding stage has a stage Y-axis drive mechanism and a stage X-axis drive mechanism for moving the lower layer-side workpiece in the horizontal direction,
The bonding tool has an up-down drive mechanism that raises and lowers the object to be bonded in the upper layer and a θ drive mechanism that rotates horizontally,
The upper and lower two-view recognition optical system further has an optical system Y-axis drive mechanism for moving the upper and lower fields to a recognizable position and a non-recognized position of each of the targets.
A mounting device, characterized in that: A mounting method for stacking and joining objects to be joined using the mounting device according to claim 5 ,
A step of switching to the light source having a different spectral wavelength range in accordance with the arrangement of the target of the upper-layer target object and the target of the lower-layer target object,
A step of adsorbing the upper-layer object to be bonded to the bonding tool,
A step of adsorbing the lower layer object to be bonded to the bonding stage,
A step of moving the upper field of view and the lower field of view to a position where the target of the upper layer target to be bonded and the target of the lower layer target to be bonded can be recognized,
A step of recognizing a target of the object to be joined in the upper layer,
A step of recognizing a target of the lower object to be joined;
A step of aligning the upper-layer object to be bonded and the lower-layer object to be bonded,
Retreating the upper field of view and the lower field of view to an initial position after alignment,
Bonding the upper layer object to be bonded to the lower layer object to be bonded,
including,
A mounting method characterized by that:

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