JP6562946B2 - ガス案内装置を備える真空チャンバのガス分配装置 - Google Patents
ガス案内装置を備える真空チャンバのガス分配装置 Download PDFInfo
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- 238000009826 distribution Methods 0.000 title claims description 50
- 238000005192 partition Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 description 154
- 238000000576 coating method Methods 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000009749 continuous casting Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000002730 additional effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
欧州特許第0444253号明細書(EP 0 444 253 B1)において、真空チャンバ内で陰極スパッタリング法を用いて基板上に薄膜を被着する装置が公知であり、コーティングすべき基板は、真空チャンバを通して移動可能である。スパッタリングすべき陰極と陽極との間には、スクリーンが配置されており、基板平面は、陽極の下を延びている。陰極平面に対して平行に、かつ陰極と陽極との間の領域に、複数の通路が設けられている中空形材(Hohlprofil)が設けられており、中空形材は、真空チャンバの壁により保持されており、調温媒体及びプロセスガスが貫流している。その際、プロセスガスのための通路は、開口を有しており、開口は、この通路の長手方向軸線に対して横方向に延びており、真空チャンバ内へのプロセスガスの流出を実現する。
本発明の課題は、単純かつ安価な構成でありながら、真空チャンバ内におけるガスの改善された分配、とりわけ動作信頼性の高い分配を実現する、真空チャンバのガス分配装置を提供することである。
図中、同一又は同種の構成要素には、同一の符号を付した。図は、例示にすぎず、限定的に解すべきものではない。
11 真空チャンバの内側領域
15 チャンバ壁
20 構成部材
20a 構成部材
21 ガイド板
25 主通路
25a 主ガス供給通路
26 主通路の内側領域
26a 主通路壁
27 ノズル
28 供給開口
30 チューニング通路
30a チューニングガス供給通路
30b チューニングガス供給通路
30c チューニングガス供給通路
30d チューニングガス供給通路
30e チューニングガス供給通路
31 チューニング通路の内側領域
31a チューニング通路壁
32 長手方向隔壁
36 ガイド板
37 ノズル
37’ ノズル
38 供給開口
40 供給ライン
41 真空フィードスルー
60 セグメント
60’ セグメント
70 横方向隔壁、セグメントプレート
Claims (14)
- 真空チャンバ(10)のガス分配装置であって、
前記ガス分配装置は、ガス案内装置を備え、前記ガス案内装置は、少なくとも1つの主通路(25)を有し、前記主通路(25)は、ノズル(27)を有し、前記ノズル(27)からガスが、前記真空チャンバ(10)内に分配可能であり、さらに
前記ガス分配装置は、ガス供給装置を備え、前記ガス供給装置により前記ガス案内装置に、ガスが供給可能であり、
前記少なくとも1つの主通路(25)は、中空形材としてワンピースに形成される構成部材(20)から形成されており、前記中空形材としてワンピースに形成される構成部材(20)により、前記ガス供給装置の少なくとも1つの主ガス供給通路(25a)及び少なくとも1つのチューニングガスを前記真空チャンバ(10)内に分配可能なチューニング通路ノズル(37,37’)を有する少なくとも1つのチューニング通路(30)も形成されている、
ガス分配装置において、
前記構成部材(20)は、連続鋳造形材として形成されている、
ことを特徴とするガス分配装置。 - 前記中空形材としてワンピースに形成される構成部材(20)により、少なくとも1つのチューニングガス供給通路(30a,...,30e)も形成されている、請求項1に記載の、ガス案内装置を備える真空チャンバ(10)のガス分配装置。
- 前記少なくとも1つのチューニング通路(30)は、通路長手延在方向に沿って相前後して配置される複数のチャンバ状のセグメント(60,60’)を有する、請求項1又は2に記載のガス分配装置。
- 少なくとも2つの連続するセグメント(60,60’)は、1つの共通の横方向隔壁(70)を有する、請求項3に記載のガス分配装置。
- 各セグメント(60,60’)に少なくとも1つのチューニングガス供給通路(30a,...,30e)を介してチューニングガスが別々に供給されるか、又は供給可能である、請求項3又は4に記載のガス分配装置。
- 主通路(25)及びチューニング通路(30)は、1つの共通の長手方向隔壁(32)を有する、請求項2から5までの少なくとも1項に記載のガス分配装置。
- 前記少なくとも1つの主ガス供給通路(25a)は、主通路壁(26a)の外側領域に配置されている、請求項2から6までの少なくとも1項に記載のガス分配装置。
- 前記少なくとも1つのチューニングガス供給通路(30a,...,30e)は、チューニング通路壁(31a)の外側領域に配置されている、請求項7に記載のガス分配装置。
- 前記少なくとも1つの主ガス供給通路(25a)は、前記主通路壁(26a)内に設けられた少なくとも1つの供給開口(28)を介して前記主通路(25)に接続されている、請求項8に記載のガス分配装置。
- 前記供給開口(28)は、前記主ガス供給通路(25a)を貫いて前記主通路の内側領域(26)内まで通される横方向孔として形成されており、前記横方向孔は、前記主ガス供給通路(25a)の壁内の、前記主通路(25)には通じない領域で閉鎖されている、請求項9に記載のガス分配装置。
- 前記少なくとも1つのチューニングガス供給通路(30a,...,30e)は、前記チューニング通路壁(31a)内に設けられた少なくとも1つの供給開口(38)を介して前記チューニング通路(30)に接続されている、請求項10に記載のガス分配装置。
- 前記供給開口(38)は、前記チューニングガス供給通路(30a,...,30e)を貫いて前記チューニング通路(30)の内側領域(31)内まで通される横方向孔として形成されており、前記横方向孔は、前記チューニングガス供給通路(30a,...,30e)の壁内の、前記チューニング通路(30)には通じない領域で閉鎖されている、請求項11に記載のガス分配装置。
- 前記主通路(25)の前記内側領域(26)及び/又は前記チューニング通路(30)の前記内側領域(31)は、長方形の横断面を有する、請求項12に記載のガス分配装置。
- 前記ガス案内装置は、前記真空チャンバ(10)の内側領域(11)に割り当てられている領域と、前記真空チャンバ(10)のチャンバ壁(15)に割り当てられている領域とを有し、
少なくとも1つの第1のチューニングガス供給通路(30a,...,30e)が、前記真空チャンバ(10)の前記内側領域(11)に割り当てられている領域内に配置されており、少なくとも1つの第2のチューニングガス供給通路(30a,...,30e)が、前記真空チャンバ(10)の前記チャンバ壁(15)に割り当てられている領域内に配置されている、
請求項2から13までのいずれか1項に記載のガス分配装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014105080 | 2014-04-09 | ||
DE102014105080.0 | 2014-04-09 | ||
PCT/EP2015/057115 WO2015155078A1 (de) | 2014-04-09 | 2015-03-31 | Gasverteilvorrichtung einer vakuumkammer mit einer gasführungseinrichtung |
Publications (2)
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JP2017510712A JP2017510712A (ja) | 2017-04-13 |
JP6562946B2 true JP6562946B2 (ja) | 2019-08-21 |
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JP2016561752A Active JP6562946B2 (ja) | 2014-04-09 | 2015-03-31 | ガス案内装置を備える真空チャンバのガス分配装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20170032934A1 (ja) |
EP (1) | EP3129522B1 (ja) |
JP (1) | JP6562946B2 (ja) |
KR (2) | KR20160145087A (ja) |
CN (1) | CN106414796B (ja) |
WO (1) | WO2015155078A1 (ja) |
Families Citing this family (1)
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US20180239969A1 (en) * | 2017-02-23 | 2018-08-23 | Ford Global Technologies, Llc | Free Space Detection Using Monocular Camera and Deep Learning |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197724A (ja) * | 1982-05-12 | 1983-11-17 | Toshiba Corp | 気相成長装置用ガス導入管 |
JPH01104768A (ja) * | 1987-10-15 | 1989-04-21 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
DE4006411C2 (de) * | 1990-03-01 | 1997-05-28 | Leybold Ag | Vorrichtung zum Aufbringen dünner Schichten auf ein Substrat |
GB9410567D0 (en) * | 1994-05-26 | 1994-07-13 | Philips Electronics Uk Ltd | Plasma treatment and apparatus in electronic device manufacture |
US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
JP4873820B2 (ja) * | 2002-04-01 | 2012-02-08 | 株式会社エフティーエル | 半導体装置の製造装置 |
US7166199B2 (en) * | 2002-12-18 | 2007-01-23 | Cardinal Cg Company | Magnetron sputtering systems including anodic gas distribution systems |
JP4267624B2 (ja) * | 2003-08-07 | 2009-05-27 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
DE102004029466A1 (de) * | 2004-06-18 | 2006-01-05 | Leybold Optics Gmbh | Medieninjektor |
KR101412643B1 (ko) * | 2012-06-29 | 2014-07-08 | 주식회사 티지오테크 | 복수의 가스를 공급하기 위한 가스 공급부 및 그 제조방법 |
KR20140036765A (ko) * | 2012-09-18 | 2014-03-26 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
CN103572209B (zh) * | 2013-11-05 | 2015-10-21 | 无锡英普林纳米科技有限公司 | 一种亚稳态二氧化钒薄膜的制备方法 |
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2015
- 2015-03-31 US US15/302,527 patent/US20170032934A1/en not_active Abandoned
- 2015-03-31 KR KR1020167031295A patent/KR20160145087A/ko not_active Application Discontinuation
- 2015-03-31 CN CN201580029436.6A patent/CN106414796B/zh active Active
- 2015-03-31 KR KR1020187026488A patent/KR20180105260A/ko not_active Application Discontinuation
- 2015-03-31 EP EP15715705.8A patent/EP3129522B1/de active Active
- 2015-03-31 JP JP2016561752A patent/JP6562946B2/ja active Active
- 2015-03-31 WO PCT/EP2015/057115 patent/WO2015155078A1/de active Application Filing
Also Published As
Publication number | Publication date |
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CN106414796B (zh) | 2022-01-11 |
US20170032934A1 (en) | 2017-02-02 |
KR20160145087A (ko) | 2016-12-19 |
CN106414796A (zh) | 2017-02-15 |
JP2017510712A (ja) | 2017-04-13 |
WO2015155078A1 (de) | 2015-10-15 |
KR20180105260A (ko) | 2018-09-27 |
EP3129522B1 (de) | 2018-02-28 |
EP3129522A1 (de) | 2017-02-15 |
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