JP6552948B2 - ウエーハの加工方法、及び加工装置 - Google Patents

ウエーハの加工方法、及び加工装置 Download PDF

Info

Publication number
JP6552948B2
JP6552948B2 JP2015231825A JP2015231825A JP6552948B2 JP 6552948 B2 JP6552948 B2 JP 6552948B2 JP 2015231825 A JP2015231825 A JP 2015231825A JP 2015231825 A JP2015231825 A JP 2015231825A JP 6552948 B2 JP6552948 B2 JP 6552948B2
Authority
JP
Japan
Prior art keywords
laser beam
devices
electrode pads
processing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015231825A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017098492A (ja
Inventor
圭司 能丸
圭司 能丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2015231825A priority Critical patent/JP6552948B2/ja
Priority to TW105132910A priority patent/TWI704612B/zh
Priority to KR1020160154774A priority patent/KR102463653B1/ko
Priority to CN201611059362.3A priority patent/CN106881535B/zh
Publication of JP2017098492A publication Critical patent/JP2017098492A/ja
Application granted granted Critical
Publication of JP6552948B2 publication Critical patent/JP6552948B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
JP2015231825A 2015-11-27 2015-11-27 ウエーハの加工方法、及び加工装置 Active JP6552948B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015231825A JP6552948B2 (ja) 2015-11-27 2015-11-27 ウエーハの加工方法、及び加工装置
TW105132910A TWI704612B (zh) 2015-11-27 2016-10-12 晶圓的加工方法及加工裝置
KR1020160154774A KR102463653B1 (ko) 2015-11-27 2016-11-21 웨이퍼의 가공 방법 및 가공 장치
CN201611059362.3A CN106881535B (zh) 2015-11-27 2016-11-25 晶片的加工方法和加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015231825A JP6552948B2 (ja) 2015-11-27 2015-11-27 ウエーハの加工方法、及び加工装置

Publications (2)

Publication Number Publication Date
JP2017098492A JP2017098492A (ja) 2017-06-01
JP6552948B2 true JP6552948B2 (ja) 2019-07-31

Family

ID=58803843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015231825A Active JP6552948B2 (ja) 2015-11-27 2015-11-27 ウエーハの加工方法、及び加工装置

Country Status (4)

Country Link
JP (1) JP6552948B2 (zh)
KR (1) KR102463653B1 (zh)
CN (1) CN106881535B (zh)
TW (1) TWI704612B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2618942T3 (es) * 2012-04-04 2017-06-22 Kuraray Co., Ltd. Copolímero, composición de caucho que usa el mismo, y neumático
CN108422109A (zh) * 2018-05-15 2018-08-21 广东工业大学 一种可控椭圆度微孔的激光加工装置与激光加工方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2690466B2 (ja) * 1995-01-11 1997-12-10 住友電気工業株式会社 レーザビームスピンナ
JPH1097715A (ja) * 1996-07-31 1998-04-14 Asahi Komagu Kk 磁気記録媒体用基板および磁気記録媒体
US7259354B2 (en) * 2004-08-04 2007-08-21 Electro Scientific Industries, Inc. Methods for processing holes by moving precisely timed laser pulses in circular and spiral trajectories
JP4787091B2 (ja) * 2006-06-27 2011-10-05 株式会社ディスコ ビアホールの加工方法
JP5016876B2 (ja) * 2006-09-06 2012-09-05 株式会社ディスコ ビアホールの加工方法
JP5030535B2 (ja) * 2006-11-02 2012-09-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2008186870A (ja) * 2007-01-26 2008-08-14 Disco Abrasive Syst Ltd ビアホールの加工方法
JP2008212999A (ja) * 2007-03-06 2008-09-18 Disco Abrasive Syst Ltd レーザー加工装置
KR100829593B1 (ko) * 2007-04-30 2008-05-14 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
KR101092840B1 (ko) * 2008-10-07 2011-12-14 주식회사 에스엠이씨 레이저를 이용한 비아홀 가공장치
US8263899B2 (en) * 2010-07-01 2012-09-11 Sunpower Corporation High throughput solar cell ablation system
JP5861494B2 (ja) * 2012-02-23 2016-02-16 三菱マテリアル株式会社 レーザ加工装置およびレーザ加工方法
CN102769087B (zh) * 2012-07-09 2016-12-07 上海大学 基于通孔封装技术的发光二极管及其制造工艺
JP6071641B2 (ja) * 2013-02-27 2017-02-01 三菱重工業株式会社 加工装置、加工方法

Also Published As

Publication number Publication date
TW201729273A (zh) 2017-08-16
CN106881535B (zh) 2020-06-30
CN106881535A (zh) 2017-06-23
TWI704612B (zh) 2020-09-11
KR20170062385A (ko) 2017-06-07
KR102463653B1 (ko) 2022-11-03
JP2017098492A (ja) 2017-06-01

Similar Documents

Publication Publication Date Title
KR102251261B1 (ko) 칩 제조 방법
KR101975607B1 (ko) 레이저 가공 장치
JP5036276B2 (ja) レーザー加工装置
KR101322845B1 (ko) 레이저 가공장치
KR102316369B1 (ko) 레이저 가공 방법 및 레이저 가공 장치
JP4977411B2 (ja) レーザー加工装置
JP5395411B2 (ja) ウエーハのレーザー加工方法
KR101953918B1 (ko) 레이저 가공 장치
JP2012240114A (ja) レーザー加工装置
KR101941291B1 (ko) 레이저 가공 장치
JP2008036667A (ja) レーザー光線照射装置およびレーザー加工機
JP2010123723A (ja) ウエーハのレーザー加工方法
JP2008296254A (ja) レーザー加工装置
JP2008036695A (ja) レーザー光線照射装置およびレーザー加工機
JP7123652B2 (ja) レーザー加工装置
JP7307001B2 (ja) レーザ加工装置および方法、チップ転写装置および方法
JP6721439B2 (ja) レーザー加工装置
US9149886B2 (en) Modified layer forming method
JP6552948B2 (ja) ウエーハの加工方法、及び加工装置
JP2008186870A (ja) ビアホールの加工方法
JP7037425B2 (ja) レーザー光線の焦点位置検出方法
JP6068882B2 (ja) レーザー加工装置
JP6230870B2 (ja) レーザー加工装置
JP6510829B2 (ja) レーザー加工装置
JP7032147B2 (ja) 加工装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180928

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190611

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190703

R150 Certificate of patent or registration of utility model

Ref document number: 6552948

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250