JP6499066B2 - Semiconductor device, inverter circuit, drive device, vehicle, and elevator - Google Patents

Description

  Embodiments described herein relate generally to a semiconductor device, an inverter circuit, a drive, a vehicle, and an elevator.

  For example, in a power semiconductor module such as a power conversion module, as the switching operation becomes faster, element breakdown and noise generation due to overvoltage at turn-off become a problem. The overvoltage at turn-off is proportional to the inductance in the circuit wiring and the time change rate (di / dt) of the current flowing through the power semiconductor module.

  If the switching time is increased in order to suppress the overvoltage, the switching operation is delayed. At the same time, the switching loss expressed by the time integration of the product of current and voltage is increased. In order to suppress overvoltage and reduce switching loss, it is desirable to reduce the inductance of the power semiconductor module. In order to reduce the inductance, there is a method of dividing the power semiconductor module into a plurality of circuit units.

JP 2014-67760 A

  The problem to be solved by the present invention is to provide a semiconductor device, an inverter circuit, a driving device, a vehicle, and an elevator capable of reducing inductance.

The semiconductor device of the embodiment includes a first electrode, a second electrode, a first switching element and a second switching electrically connected in series between the first electrode and the second electrode. A switching element unit having an element, and a capacitor electrically connected in parallel to the first switching element and the second switching element between the first electrode and the second electrode A plurality of circuit units having a capacitor unit stacked with a switching element unit, and in two adjacent circuit units, one switching element unit and the other capacitor unit are adjacent to each other, adjoin and a condenser portion and the other of the switching element portion disposed adjacent to the one of the first electrode and the other of said first electrode, said one of the second electrode and the other second The electrode adjacent.

1 is a schematic diagram of a semiconductor device according to a first embodiment. The equivalent circuit diagram of the circuit unit of 1st Embodiment. The schematic diagram of the semiconductor device of a comparison form. The figure which shows the direction of the electric current at the time of operation | movement of the semiconductor device of a comparison form and 1st Embodiment, and the direction of magnetic flux. The schematic plan view of the semiconductor device of 2nd Embodiment. The model perspective view of the drive device of 3rd Embodiment. The schematic diagram of the vehicle of 4th Embodiment. The schematic diagram of the vehicle of 5th Embodiment. The schematic diagram of the elevator of 6th Embodiment. Explanatory drawing of an Example.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same members and the like are denoted by the same reference numerals, and the description of the members and the like once described is omitted as appropriate.

(First embodiment)
The semiconductor device of this embodiment includes a first switching element and a second switching element that are electrically connected in series between the first electrode, the second electrode, and the first electrode and the second electrode. And a switching element unit having a capacitor electrically connected in parallel with the first switching element and the second switching element between the first electrode and the second electrode, and being stacked with the switching element unit. A plurality of circuit units having a capacitor portion. Then, in two adjacent circuit units, one switching element part and the other capacitor part are adjacent to each other, one capacitor part and the other switching element are adjacent to each other, and one first electrode and the other capacitor part are adjacent to each other. One electrode is adjacent, and one second electrode and the other second electrode are adjacent.

  In addition, the semiconductor device of this embodiment includes the first switching element and the second electrode electrically connected in series between the first electrode, the second electrode, and the first electrode and the second electrode. A switching element portion having a switching element, a switching element portion having a capacitor electrically connected in parallel to the first switching element and the second switching element between the first electrode and the second electrode; A first circuit knit having a capacitor portion to be stacked; and a second circuit unit. The switching element part of the first circuit unit and the capacitor part of the second circuit unit are adjacent to each other, the capacitor part of the first circuit unit and the switching element of the second circuit unit are adjacent to each other, and the first circuit unit The first electrode of the second circuit unit is adjacent to the first electrode of the second circuit unit, and the second electrode of the first circuit unit is adjacent to the second electrode of the second circuit unit.

  FIG. 1 is a schematic diagram of the semiconductor device of this embodiment. FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along the line AA ′ of FIG. The semiconductor device of this embodiment is a semiconductor module used for an inverter circuit.

  The semiconductor module 100 includes a plurality of circuit units 10a to 10f. The circuit units 10a to 10f include first electrodes 11a to 11f, second electrodes 12a to 12f, switching element units 13a to 13f, capacitor units 14a to 14f, and heat sinks 15a to 15f. The circuit units 10a to 10f include an AC electrode and a gate signal terminal (not shown).

  The circuit units 10a to 10f have a structure in which switching element portions 13a to 13f and capacitor portions 14a to 14f are stacked one above the other. Capacitor portions 14a to 14f are arranged above or below switching element portions 13a to 13f in each of circuit units 10a to 10f. The heat sinks 15a to 15f are provided on opposite sides of the capacitor portions 14a to 14f of the switching element portions 13a to 13f.

  The plurality of circuit units 10a to 10f are arranged side by side next to each other.

  In two adjacent circuit units, one switching element unit and the other capacitor unit are adjacent to each other, and one capacitor unit and the other switching element unit are adjacent to each other. For example, attention is paid to adjacent circuit units 10a and 10b. The switching element portion 13a of the circuit unit 10a and the capacitor portion 14b of the circuit unit 10b are adjacent to each other. Moreover, the capacitor | condenser part 14a of the circuit unit 10a and the switching element part 13b of the circuit unit 10b adjoin.

  In other words, in two adjacent circuit units, the distance between one switching element part and the other capacitor part is shorter than the distance between one switching element part and the other switching element part. In other words, two adjacent circuit units are arranged in a relationship in which the vertical direction is inverted. The same applies to the other two adjacent circuit units.

  In two adjacent circuit units, the first electrode and the first electrode are adjacent to each other, and the second electrode and the second electrode are adjacent to each other. For example, attention is paid to adjacent circuit units 10a and 10b. The first electrode 11a of the circuit unit 10a and the first electrode 11b of the circuit unit 10b are adjacent to each other. Further, the second electrode 12a of the circuit unit 10a and the second electrode 12b of the circuit unit 10b are adjacent to each other. The same applies to the other two adjacent circuit units.

A common potential is applied to the first electrodes 11a to 11f. Second electrodes 12a to 12f
Are applied with a common potential. The circuit units 10a to 10f are connected in parallel.

  A potential lower than that of the first electrodes 11a to 11f is applied to the second electrodes 12a to 12f. A positive potential is applied to the first electrodes 11a to 11f. The second electrodes 12a to 12f are grounded or given a negative potential.

  FIG. 2 is an equivalent circuit diagram of the circuit unit of the present embodiment. It is a circuit diagram equivalent to the circuit of circuit units 10a-10f.

  The circuit unit 10 includes a first electrode 11, a second electrode 12, a switching element unit 13, a capacitor unit 14, and an AC electrode (third electrode) 16.

  The switching element unit 13 includes a first switching element 18, a second switching element 20, a first diode 22, and a second diode 24. The first switching element 18, the second switching element 20, the first diode 22, and the second diode 24 are mounted on, for example, an insulating or conductive substrate (not shown).

  The first switching element 18 and the second switching element 20 are electrically connected in series between the first electrode 11 and the second electrode 12. The first switching element 18 and the second switching element 20 are, for example, SiC (silicon carbide) MOSFET (Metal Oxide Semiconductor Field Effect Transistor).

  The first diode 22 is connected in parallel to the first switching element 18. The second diode 24 is connected in parallel to the second switching element 20. The first diode 22 and the second diode 24 are freewheeling diodes.

  The capacitor unit 14 includes a capacitor 26. The capacitor 26 is electrically connected in parallel to the first switching element 18 and the second switching element 20 between the first electrode 11 and the second electrode 12.

  A potential lower than that of the first electrode 11 is applied to the second electrode 12. A positive potential is applied to the first electrode 11. The second electrode 12 is grounded or given a negative potential.

  The AC electrode 16 is connected between the first switching element 18 and the second switching element 20. By controlling the gate voltages of the first switching element 18 and the second switching element 20, an AC voltage is output from the AC electrode 16.

  While the second switching element 20 changes from the on state to the off state, a current flows through the first diode 22 in the direction indicated by the dotted arrow in FIG. In addition, while the first switching element 18 changes from the on state to the off state, a current flows through the second diode 24 in the direction indicated by the dotted arrow in FIG.

  Next, the operation and effect of the semiconductor device of this embodiment will be described.

  FIG. 3 is a schematic diagram of a semiconductor device of a comparative form. FIG. 3A is a plan view, and FIG. 3B is a cross-sectional view taken along the line AA ′ of FIG. The semiconductor device of the comparative form is a semiconductor module used for an inverter circuit.

  The semiconductor module 900 includes two adjacent circuit units, in which one switching element unit and the other switching element unit are adjacent to each other, and one capacitor unit and the other capacitor unit are adjacent to each other. Different from the semiconductor module 100. In other words, the two adjacent circuit units are different from the semiconductor module 100 of the present embodiment in that they are arranged in the same vertical relationship.

  The semiconductor module 900 is divided into a plurality of circuit units 10a to 10f, thereby reducing inductance. If the mutual inductances of the circuit units 10a to 10f are ignored, the inductance of the semiconductor module 900 is reduced to 1 / N by dividing the semiconductor module 900 into N circuit units. In the comparative form, since there are six circuit units, the inductance is reduced to 1/6.

  Therefore, the overvoltage at the time of turn-off proportional to the time change rate (di / dt) of the current flowing through the inductance and the power semiconductor module is suppressed. Therefore, it is possible to suppress element destruction and noise generation.

  FIG. 4 is a diagram showing the direction of current and the direction of magnetic flux during operation of the semiconductor device of the comparative example and this embodiment. FIG. 4A shows the case of comparison, and FIG. 4B shows the case of this embodiment. In the figure, black arrows indicate the direction of magnetic flux.

  As shown in FIG. 4A, in the semiconductor module 900 of the comparative form, the direction of magnetic flux of the circuit units 10a to 10f is the same and strengthens each other. Therefore, the mutual inductance is added to the inductance, and the inductance of the semiconductor module 900 increases.

  Also in the semiconductor module 100, the inductance is reduced by being divided into a plurality of circuit units 10a to 10f. Furthermore, as shown in FIG. 4B, in the semiconductor module 100 of the present embodiment, the directions of the magnetic fluxes of the circuit units 10a to 10f are opposite and cancel each other. Therefore, the mutual inductance is subtracted from the inductance, and the inductance is further reduced. Therefore, it is possible to further suppress element destruction and noise generation.

  In the semiconductor module 100 of the present embodiment, in two adjacent circuit units, the first electrode and the first electrode are adjacent to each other, and the second electrode and the second electrode are adjacent to each other. Therefore, the connection between the plurality of first electrodes and the connection between the plurality of second electrodes are easy.

  According to the present embodiment, a semiconductor module is realized in which inductance is reduced and element destruction and noise generation can be suppressed.

  Here, the case where there are six circuit units has been described as an example, but the number of circuit units is not limited to six. As long as there are two or more circuit units, any number can be used.

(Second Embodiment)
The semiconductor device of this embodiment is the same as that of the first embodiment except that the circuit units are arranged in a ring shape. Therefore, a part of the description overlapping the first embodiment is omitted.

  FIG. 5 is a schematic plan view of the semiconductor device of this embodiment. The semiconductor device of this embodiment is a semiconductor module used for an inverter circuit.

  In the semiconductor module 200, a plurality of circuit units 10a to 10h are annularly arranged. The circuit units 10a to 10h are arranged so that the direction connecting the first electrodes 11a to 11h and the second electrodes 12a to 12h of the circuit units 10a to 10h is radial. In other words, the circuit units 10a to 10h are arranged in a circle shape.

  For example, in the semiconductor module of the first embodiment shown in FIG. 1, the circuit units 10b to 10e other than the circuit unit 10a and the circuit unit 10f located at both ends are affected by magnetic flux from two adjacent circuit units. However, the circuit unit 10a and the circuit unit 10f located at both ends are affected only by the magnetic flux of one adjacent circuit unit. Therefore, the magnetic field distribution is non-uniform between the circuit units 10a to 10f, and the current distribution is non-uniform between the circuit units 10a to 10f.

  If the current distribution is non-uniform between the circuit units 10a to 10f, it is necessary to increase the design margin for the rated current of the semiconductor module. Therefore, the manufacturing cost of the semiconductor module may increase.

  As shown in FIG. 5, in the semiconductor module 200 of the present embodiment, all the circuit units 10a to 10h are similarly affected by magnetic flux from two adjacent circuit units. Therefore, the uniformity of the magnetic field distribution between the circuit units 10a to 10h is improved, and the uniformity of the current distribution is improved between the circuit units 10a to 10h.

  When the uniformity of the current distribution is improved between the circuit units 10a to 10h, the design margin for the rated current of the semiconductor module can be reduced. Therefore, it is possible to reduce the manufacturing cost of the semiconductor module.

  According to the present embodiment, a semiconductor module is realized in which inductance is reduced and element destruction and noise generation can be suppressed. Furthermore, the uniformity of the current distribution among the circuit units is improved, and the manufacturing cost of the semiconductor module can be reduced.

  Here, the case where there are eight circuit units has been described as an example, but the number of circuit units is not limited to eight. If the number of circuit units is four or more and an even number, the direction of the magnetic flux of adjacent circuit units is reversed, and any number can be set.

(Third embodiment)
The inverter circuit and drive device of this embodiment are drive devices provided with the semiconductor device of the second embodiment.

  FIG. 6 is a schematic perspective view of a drive device including the semiconductor device of the present embodiment. The driving device 300 includes a motor 40 and an inverter circuit 50.

  The inverter circuit 50 is provided on the back surface of the motor 40. The inverter circuit 50 includes three semiconductor modules 200a, 200b, and 200c having the same configuration as that of the semiconductor module 200 of the second embodiment. By connecting the three semiconductor modules 200a, 200b, and 200c in parallel, a three-phase inverter circuit 50 including three AC voltage output terminals U, V, and W is realized. The motor 40 is driven by the AC voltage output from the inverter circuit 50.

  Also in the inverter circuit 50 and the drive device 300 of the present embodiment, it is possible to suppress element destruction and noise generation. In addition, the manufacturing cost can be reduced. In addition, each of the semiconductor modules 200a, 200b, and 200c has a disk shape by arranging the circuit units in a circle shape. Therefore, it can be provided on the back surface of the motor 40, and the drive device 300 can be downsized.

(Fourth embodiment)
The vehicle according to the present embodiment is a vehicle including the semiconductor device according to the first embodiment.

  FIG. 7 is a schematic diagram of the vehicle according to the present embodiment. The vehicle 400 according to the present embodiment is a railway vehicle. The vehicle 400 includes a motor 140 and an inverter circuit 150.

  The inverter circuit 150 includes three semiconductor modules having the same configuration as that of the semiconductor module 100 of the first embodiment. By connecting three semiconductor modules in parallel, a three-phase inverter circuit 150 including three AC voltage output terminals U, V, and W is realized.

  The motor 140 is driven by the AC voltage output from the inverter circuit 150. The wheels 140 of the vehicle 400 are rotated by the motor 140.

  The vehicle 400 of this embodiment has high reliability by including the inverter circuit 150 in which element destruction and noise generation are suppressed.

(Fifth embodiment)
The vehicle according to the present embodiment is a vehicle including the semiconductor device according to the first embodiment.

  FIG. 8 is a schematic diagram of the vehicle according to the present embodiment. The vehicle 1000 of this embodiment is an automobile. The vehicle 1000 includes a motor 140 and an inverter circuit 150.

  The inverter circuit 150 includes three semiconductor modules having the same configuration as that of the semiconductor module 100 of the first embodiment. By connecting three semiconductor modules in parallel, a three-phase inverter circuit 150 including three AC voltage output terminals U, V, and W is realized.

  The motor 140 is driven by the AC voltage output from the inverter circuit 150. The wheels 140 of the vehicle 1000 are rotated by the motor 140.

  The vehicle 1000 of this embodiment has high reliability by including the inverter circuit 150 in which element destruction and noise generation are suppressed.

(Sixth embodiment)
The elevator according to the present embodiment is an elevator including the semiconductor device according to the first embodiment.

  FIG. 9 is a schematic diagram of an elevator (elevator) according to the present embodiment. The elevator 1100 of this embodiment includes a car 1010, a counterweight 1012, a wire rope 1014, a hoisting machine 1016, a motor 140, and an inverter circuit 150.

  The inverter circuit 150 includes three semiconductor modules having the same configuration as that of the semiconductor module 100 of the first embodiment. By connecting three semiconductor modules in parallel, a three-phase inverter circuit 150 including three AC voltage output terminals U, V, and W is realized.

  The motor 140 is driven by the AC voltage output from the inverter circuit 150. The hoisting machine 1016 is rotated by the motor 140 and the car 1010 is moved up and down.

  The elevator 1100 of this embodiment has high reliability by including the inverter circuit 150 in which element destruction and noise generation are suppressed.

  Examples will be described below.

  FIG. 10 is an explanatory diagram of the embodiment. FIG. 10A is an explanatory diagram of a structure in which simulation is performed. FIG. 10B is a diagram showing the result of simulation.

  As shown in FIG. 10A, the two inverted circuit units 10a and 10b were moved relatively in the vertical direction to change the displacement (t) of the wiring board surface of each circuit unit. The coupling coefficient (k) between the circuit units was determined by simulation while changing the deviation (t).

  It accounts for the relationship between the displacement (t) of the wiring board surface and the coupling coefficient (k). The coupling coefficient becomes negative when t is shifted in the positive direction (the direction in which the circuit unit 10b goes relatively upward in FIG. 10A) from the position (t = 0) where the wiring board surfaces coincide. I understand. That is, in two adjacent circuit units 10a and 10b, one switching element portion 13a and the other capacitor portion 14b are adjacent to each other, and one capacitor portion 14a and the other switching element portion 13b are adjacent to each other. As a result, the coupling coefficient becomes negative. When the coupling coefficient becomes negative, the mutual inductance is subtracted from the inductance, and the inductance is reduced.

  The effect of the embodiment has been clarified by examples.

  As described above, in the first to third embodiments, the first switching element and the second switching element have been described by taking the MOSFET as an example. It is also possible to apply.

  In the first to third embodiments, SiC (silicon carbide) is described as an example of the semiconductor material of the first switching element and the second switching element. However, Si (silicon) or GaN (gallium nitride) is used. Etc. can also be applied.

  Further, in the fourth to sixth embodiments, the case where the semiconductor device of the present invention is applied to a vehicle or an elevator has been described as an example. It is also possible to do.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. For example, a component in one embodiment may be replaced or changed with a component in another embodiment. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 10 Circuit unit 10a-h Circuit unit 11 1st electrode 11a-h 1st electrode 12 2nd electrode 12a-h 2nd electrode 13 Switching element part 13a-f Switching element part 14 Capacitor part 14a-f Capacitor part 15a to f heat sink 16 AC electrode (third electrode)
18 First switching element 20 Second switching element 22 First diode 24 Second diode 26 Capacitor 40 Motor 50 Inverter circuit 100 Semiconductor module (semiconductor device)
140 Motor 150 Inverter circuit 200 Semiconductor module (semiconductor device)
200a-c Semiconductor module (semiconductor device)
300 Driving device 400 Vehicle 1000 Vehicle 1100 Elevator

Claims (20)

A first electrode, a second electrode, a switching element portion having a first switching element and a second switching element electrically connected in series between the first electrode and the second electrode; A capacitor electrically connected in parallel to the first switching element and the second switching element is provided between the first electrode and the second electrode, and is stacked with the switching element unit. A plurality of circuit units having a capacitor unit,
In two adjacent circuit units, one of the switching element portions and the other capacitor portion are adjacent to each other, one of the capacitor portions and the other switching element portion are adjacent to each other, A semiconductor device in which an electrode and the other first electrode are adjacent to each other, and one of the second electrode and the other second electrode are adjacent to each other.   The semiconductor device according to claim 1, wherein the first electrodes are connected to each other and the second electrodes are connected to each other.   In the two adjacent circuit units, the distance between one switching element part and the other capacitor part is shorter than the distance between one switching element part and the other switching element part. The semiconductor device according to claim 2.   4. The semiconductor device according to claim 1, wherein the circuit unit includes a third electrode connected between the first switching element and the second switching element. 5.   5. The semiconductor device according to claim 1, further comprising a heat sink on an opposite side of the switching element portion across the capacitor portion. 6.   The semiconductor device according to claim 1, wherein the circuit unit is arranged in a ring shape.   The semiconductor device according to claim 1, wherein the first switching element and the second switching element are MOSFETs or IGBTs.   The semiconductor device according to claim 1, wherein in two adjacent circuit units, the direction of one magnetic flux is opposite to the direction of the other magnetic flux. A first electrode, a second electrode, a switching element portion having a first switching element and a second switching element electrically connected in series between the first electrode and the second electrode; A capacitor electrically connected in parallel to the first switching element and the second switching element is provided between the first electrode and the second electrode, and is stacked with the switching element unit. the capacitor section, the first circuit units and the second circuit unit includes a with,
The switching element portion of the first circuit unit and the capacitor portion of the second circuit unit are adjacent to each other, and the capacitor portion of the first circuit unit and the switching element portion of the second circuit unit are Are adjacent to each other, the first electrode of the first circuit unit and the first electrode of the second circuit unit are adjacent to each other, and the second electrode and the second electrode of the first circuit unit are adjacent to each other. A semiconductor device adjacent to the second electrode of the circuit unit.   The semiconductor device according to claim 9, wherein the first electrodes are connected to each other and the second electrodes are connected to each other.   The distance between the switching element part of the first circuit unit and the capacitor part of the second circuit unit is such that the switching element part of the first circuit unit and the switching element part of the second circuit unit The semiconductor device according to claim 9, wherein the semiconductor device is shorter than the distance between the semiconductor device and the semiconductor device.   The semiconductor device according to claim 9, further comprising a third electrode connected between the first switching element and the second switching element.   13. The semiconductor device according to claim 9, further comprising a heat sink on an opposite side of the switching element portion across the capacitor portion. The semiconductor device according to claim 9, wherein the first and second circuit units are annularly arranged.   The semiconductor device according to claim 9, wherein the first switching element and the second switching element are MOSFETs or IGBTs.   The semiconductor device according to claim 9, wherein a direction of magnetic flux of the first circuit unit is opposite to a direction of magnetic flux of the second circuit unit. An inverter circuit comprising the semiconductor device according to any one of claims 1 to 16 . Driving device comprising a semiconductor device according to any one of claims 1 to claim 1 6. A vehicle comprising the semiconductor device according to any one of claims 1 to 16 . An elevator comprising the semiconductor device according to any one of claims 1 to 16 .

Images