JP6474078B2 - 窒化チタン薄膜熱電半導体の製造方法 - Google Patents
窒化チタン薄膜熱電半導体の製造方法 Download PDFInfo
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- JP6474078B2 JP6474078B2 JP2015060270A JP2015060270A JP6474078B2 JP 6474078 B2 JP6474078 B2 JP 6474078B2 JP 2015060270 A JP2015060270 A JP 2015060270A JP 2015060270 A JP2015060270 A JP 2015060270A JP 6474078 B2 JP6474078 B2 JP 6474078B2
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- thin film
- partial pressure
- titanium nitride
- thermoelectric semiconductor
- pressure ratio
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims description 59
- 239000010409 thin film Substances 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000007789 gas Substances 0.000 claims description 47
- 238000004544 sputter deposition Methods 0.000 claims description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 12
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 5
- 239000000395 magnesium oxide Substances 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Description
ここで、前記スパッタはマグネトロンスパッタにより行ってよい。
また、前記スパッタは窒化チタンターゲットを使用してよい。
また、前記アルゴン分圧比は10%から40%または70%から100%であってよい。
また、前記アルゴン分圧比は20%〜40%または80%から100%であってよい。
本発明の他の側面によれば、上記何れかの製造方法により製造された窒化チタン薄膜熱電半導体が与えられる。
本発明のさらに他の側面によれば、上記窒化チタン薄膜熱電半導体を使用した熱電発電素子が与えられる。
試料基板には酸化マグネシウム(MgO)単結晶を用い,アセトン中で10分間の超音波洗浄を行った。試料基板は,コンビナトリアル・スパッタ装置の試料ホルダーに固定し,到達圧力が5.0×10−5Pa以下となるまで真空排気を行った。マグネトロンスパッタリングにより基板の加熱なしで常温にて成膜を行った。成膜条件は,ターゲット:TiN,RFスパッタ電力:100W,Arガス分圧比(Ar/(N2+Ar)):10〜100%,膜厚:400nmとした。熱起電力(ゼーベック係数)は,熱電性能評価装置(ZEM−3,アルバック理工)により測定した。測定条件は,直流4端子法により室温(約25℃)〜573℃とした。成膜条件を以下の表にまとめて示す。
・ターゲット:TiN
・高周波電力:100W
・試料−ターゲット間距離:55mm
・温度:300K
・バイアス電位:フローティング
・試料基板:MgO(100)4×22×1.5mm3
・プロセスガス:N2+Ar
・作動圧力:0.4Pa
・膜厚:400nm
以下では、TiN薄膜のスパッタの際のプロセスガス分圧比と、作製されたTiN薄膜のゼーベック係数、抵抗率、出力因子(power factor)、熱伝導度及び熱電変換性能指数(無次元性能指数ZT)との関係を示す。
100%−N2ガス分圧比
として簡単に換算することができる。
Claims (5)
- 窒素及びアルゴンからなるプロセスガスを使用して基板上にスパッタを行うことにより窒化チタン薄膜熱電半導体を製造する方法において、
製造される窒化チタン薄膜熱電半導体の結晶配向及び出力因子を前記プロセスガス中のアルゴン分圧比を設定することにより制御する、窒化チタン薄膜熱電半導体の製造方法。 - 前記スパッタはマグネトロンスパッタにより行う、請求項1に記載の窒化チタン薄膜熱電半導体の製造方法。
- 前記スパッタは窒化チタンターゲットを使用する、請求項1または2に記載の窒化チタン薄膜熱電半導体の製造方法。
- 前記アルゴン分圧比は10%から40%または70%から100%である、請求項3に記載の窒化チタン薄膜熱電半導体の製造方法。
- 前記アルゴン分圧比は20%〜40%または80%から100%である、請求項4に記載の窒化チタン薄膜熱電半導体の製造方法。
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JP2021516291A (ja) * | 2018-03-09 | 2021-07-01 | ザ ガバメント オブ ザ ユナイテッド ステイツ オブ アメリカ,アズ リプレゼンテッド バイ ザ セクレタリー オブ ザ ネイビー | 高温スパッタによる化学量論的窒化チタン薄膜 |
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JPS59182208A (ja) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | 高融点金属窒化膜の形成方法 |
JPS59182207A (ja) * | 1983-03-31 | 1984-10-17 | Fujitsu Ltd | 高融点金属窒化膜の形成方法 |
JPH05102328A (ja) * | 1991-10-04 | 1993-04-23 | Mitsubishi Electric Corp | 窒化チタン膜の成膜方法および半導体装置の製造方法ならびに半導体装置 |
KR101178166B1 (ko) * | 2009-04-28 | 2012-08-30 | 캐논 아네르바 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
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