JP6454711B2 - オプトエレクトロニクス部品、オプトエレクトロニクス装置、および、オプトエレクトロニクス装置の製造方法 - Google Patents
オプトエレクトロニクス部品、オプトエレクトロニクス装置、および、オプトエレクトロニクス装置の製造方法 Download PDFInfo
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- JP6454711B2 JP6454711B2 JP2016539459A JP2016539459A JP6454711B2 JP 6454711 B2 JP6454711 B2 JP 6454711B2 JP 2016539459 A JP2016539459 A JP 2016539459A JP 2016539459 A JP2016539459 A JP 2016539459A JP 6454711 B2 JP6454711 B2 JP 6454711B2
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- optoelectronic component
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- circuit board
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- 230000005693 optoelectronics Effects 0.000 title claims description 155
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 8
- 238000005476 soldering Methods 0.000 claims description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 230000013011 mating Effects 0.000 description 25
- 239000012212 insulator Substances 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000002918 waste heat Substances 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Description
110 ハウジング
200 基部
201 上面
202 下面
210 第1のはんだ接触パッド
215 第1のボンディングワイヤ
220 第2のはんだ接触パッド
225 第2のボンディングワイヤ
230 プラットホーム
235 チップ実装面
240 キャリア
250 キャビティ
260 導電ピン
265 絶縁体
300 キャップ
310 窓部
320 溶接接続部
400 レーザチップ
401 上面
402 下面
410 第1の電気接触パッド
420 第2の電気接触パッド
430 放射方向
500 オプトエレクトロニクス装置
600 プリント回路基板
601 前面
602 後面
610 第1の相手側接触パッド(アノード)
615 第1の外部接触パッド
620 第2の相手側接触パッド(カソード)
625 第2の外部接触パッド
630 直列回路ストリング
Claims (12)
- 上面(201)および下面(202)を有する基部(200)、ならびに、キャップ(300)を備えるハウジング(110)と、
前記基部(200)の前記上面(201)と前記キャップ(300)との間に配置されているレーザチップ(400)と、を有し、
導電ピン(260)が前記上面(201)と前記下面(202)との間を前記基部(200)を通って延在し、
前記導電ピン(260)は、前記基部(200)の残部から電気的に絶縁され、
第1のはんだ接触パッド(210)および第2のはんだ接触パッド(220)が前記基部(200)の前記下面(202)上に形成されており、
前記導電ピン(260)は、前記第1のはんだ接触パッド(210)に電気接続し、
前記レーザチップ(400)は、第1の電気接触パッド(410)と、第2の電気接触パッド(420)とを有し、
前記第1の電気接触パッド(410)は、第1のボンディングワイヤ(215)によって前記導電ピン(260)に電気接続し、
前記第2の電気接触パッド(420)は、第2のボンディングワイヤ(225)によって、前記基部(200)の前記第2のはんだ接触パッド(220)に電気接続している部分に電気接続している、オプトエレクトロニクス部品(100)。 - 前記第2のはんだ接触パッド(220)は、前記第1のはんだ接触パッド(210)をリング状に包囲している、請求項1に記載のオプトエレクトロニクス部品(100)。
- プラットホーム(230)が前記基部(200)の前記上面(201)上に形成され、
前記レーザチップ(400)は、前記プラットホーム(230)上に配置されている、請求項1又は2に記載のオプトエレクトロニクス部品(100)。 - 前記レーザチップ(400)は、前記レーザチップ(400)の放射方向(430)が前記基部(200)の前記下面(202)に対して直交するように配置されている、請求項1〜3のいずれか一項に記載のオプトエレクトロニクス部品(100)。
- 前記基部(200)および/または前記キャップ(300)は、鉄鋼を含む、請求項1〜4のいずれか一項に記載のオプトエレクトロニクス部品(100)。
- 前記キャップ(300)は、窓部(310)を有する、請求項1〜5のいずれか一項に記載のオプトエレクトロニクス部品(100)。
- 前記キャップ(300)は、前記基部(200)に溶接されている、請求項1〜6のいずれか一項に記載のオプトエレクトロニクス部品(100)。
- プリント回路基板(600)と、
請求項1〜7のいずれか一項に記載のオプトエレクトロニクス部品(100)と、を有し、
前記オプトエレクトロニクス部品(100)は、前記プリント回路基板(600)の前面(601)上に配置されている、オプトエレクトロニクス装置(500)。 - 前記オプトエレクトロニクス装置(500)は、複数の、請求項1〜7のいずれか一項に記載のオプトエレクトロニクス部品(100)を有し、
前記複数のオプトエレクトロニクス部品(100)は、直列回路(630)内に配置されている、請求項8に記載のオプトエレクトロニクス装置(500)。 - − プリント回路基板(600)を設けるステップと、
− 請求項1〜7のいずれか一項に記載のオプトエレクトロニクス部品(100)を設けるステップと、
− 前記オプトエレクトロニクス部品(100)を前記プリント回路基板(600)の
前面(601)上に配置するステップと、を含む、オプトエレクトロニクス装置(500
)の製造方法。 - 前記オプトエレクトロニクス部品(100)は、表面実装によって前記プリント回路基
板(600)の前記前面(601)上に配置される、請求項10に記載の方法。 - 前記オプトエレクトロニクス部品(100)は、リフローはんだ付けによって前記プリ
ント回路基板(600)の前記前面(601)上に配置される、請求項11に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201310217796 DE102013217796A1 (de) | 2013-09-05 | 2013-09-05 | Optoelektronisches Bauelement, optoelektronische Vorrichtung und Verfahren zum Herstellen einer optoelektronischen Vorrichtung |
DE102013217796.8 | 2013-09-05 | ||
PCT/EP2014/067448 WO2015032603A1 (de) | 2013-09-05 | 2014-08-14 | Optoelektronisches bauelement, optoelektronische vorrichtung und verfahren zum herstellen einer optoelektronischen vorrichtung |
Publications (2)
Publication Number | Publication Date |
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JP2016532306A JP2016532306A (ja) | 2016-10-13 |
JP6454711B2 true JP6454711B2 (ja) | 2019-01-16 |
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JP2016539459A Active JP6454711B2 (ja) | 2013-09-05 | 2014-08-14 | オプトエレクトロニクス部品、オプトエレクトロニクス装置、および、オプトエレクトロニクス装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9509117B2 (ja) |
JP (1) | JP6454711B2 (ja) |
CN (1) | CN105594078A (ja) |
DE (1) | DE102013217796A1 (ja) |
TW (1) | TWI566490B (ja) |
WO (1) | WO2015032603A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102016102327B4 (de) | 2016-02-10 | 2018-02-08 | Schott Ag | Gehäuse für ein elektronisches Bauelement sowie Lasermodul |
DE102018106504B4 (de) * | 2018-03-20 | 2020-03-12 | Schott Ag | Anordnung mit einem TO-Gehäuse, Verfahren zu dessen Herstellung sowie optisches Datenübertragungssystem |
TWI659585B (zh) * | 2018-05-24 | 2019-05-11 | 南茂科技股份有限公司 | 雷射二極體封裝結構 |
US20200136611A1 (en) | 2018-10-30 | 2020-04-30 | Excelitas Canada, Inc. | High Speed Switching Circuit Configuration |
US11264778B2 (en) | 2018-11-01 | 2022-03-01 | Excelitas Canada, Inc. | Quad flat no-leads package for side emitting laser diode |
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JP3410193B2 (ja) * | 1994-02-07 | 2003-05-26 | 三菱電機株式会社 | 気密封止型光半導体装置 |
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JP2002043676A (ja) * | 2000-07-25 | 2002-02-08 | Ricoh Co Ltd | サブマウント及びその製造方法並びに半導体レーザ装置 |
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-
2013
- 2013-09-05 DE DE201310217796 patent/DE102013217796A1/de active Pending
-
2014
- 2014-08-14 JP JP2016539459A patent/JP6454711B2/ja active Active
- 2014-08-14 US US14/916,660 patent/US9509117B2/en active Active
- 2014-08-14 WO PCT/EP2014/067448 patent/WO2015032603A1/de active Application Filing
- 2014-08-14 CN CN201480048907.3A patent/CN105594078A/zh active Pending
- 2014-08-29 TW TW103129785A patent/TWI566490B/zh active
Also Published As
Publication number | Publication date |
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TWI566490B (zh) | 2017-01-11 |
JP2016532306A (ja) | 2016-10-13 |
WO2015032603A1 (de) | 2015-03-12 |
DE102013217796A1 (de) | 2015-03-05 |
TW201517427A (zh) | 2015-05-01 |
US9509117B2 (en) | 2016-11-29 |
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CN105594078A (zh) | 2016-05-18 |
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