JP6364120B2 - 放射線検出器およびそれを用いた放射線検出装置 - Google Patents
放射線検出器およびそれを用いた放射線検出装置 Download PDFInfo
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- 230000005855 radiation Effects 0.000 title claims description 155
- 238000001514 detection method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 151
- 239000012535 impurity Substances 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 39
- 230000005684 electric field Effects 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 4
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- G01T1/16—Measuring radiation intensity
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- G—PHYSICS
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- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Description
図1は、本発明の実施の形態1における放射線検出器の断面構造を示す説明図である。本実施の形態1による放射線検出器は、第1導電型(n型)の高不純物濃度(n+)SiC基板1上に形成される第1導電型の低不純物濃度(n−)SiC放射線有感層2と、第2導電型(p型)の高不純物濃度(p+)半導体領域3と、p+半導体領域3表面に設けられた第1電極4と、n+SiC基板1裏面に設けられた第2電極5とを備えているpn接合を有する放射線検出器である。さらに、この放射線検出器には、第1電極4と比べて第2電極5に高い電圧が動作時にかかっており、n−SiC放射線有感層2の深さ方向全体に空乏層が広がって電界がかかっている。
数式1において、qは素電荷、εは比誘電率、ε0は真空の誘電率を示す。
図8に、本発明の実施の形態2における放射線検出器の断面構造を示す。実施の形態2は、放射線有感層として半絶縁性SiC基板を用いるものである。
1’ n+不純物
2 n−SiC放射線有感層
3 p+半導体領域
3’ p+不純物
4 第1電極
4’ 金属
5 第2電極
5’ 金属
6 マスク材
7 半絶縁性SiC基板
8 n+半導体領域
9 放射線検出器
11 高圧電源
12 プリアンプ
13 メインアンプ
14 多重波高分析装置
15 解析装置
Claims (14)
- 炭化珪素からなり、放射線の入射によって電子正孔対を生成する放射線有感層と、
前記放射線有感層の第1主面で接し、少なくとも前記放射線有感層と接する領域において第1不純物濃度を有する第1半導体領域と、
前記第1主面と反対側の第2主面で接し、少なくとも前記放射線有感層と接する領域において第2不純物濃度を有する第2半導体領域と、
前記第1半導体領域と接続する第1電極と、
前記第2半導体領域と接続する第2電極と、を備え、
前記第1主面を境として、前記第1半導体領域と隣接する前記放射線有感層内の不純物濃度が前記第1不純物濃度と不連続であり、
前記第2主面を境として、前記第2半導体領域と隣接する前記放射線有感層内の不純物濃度が前記第2不純物濃度と不連続であり、
前記放射線有感層が動作時の電圧において深さ方向全体に電界がかかっており、
前記第1電極は不透明電極であり、前記第1半導体領域を覆っており、
前記第2電極は不透明電極であり、前記第2半導体領域を覆っており、
前記第1半導体領域と前記第2半導体領域の少なくとも一方はエピタキシャル成長層で形成されている
ことを特徴とする放射線検出器。 - 請求項1に記載の放射線検出器において、
前記第1半導体領域が第1導電型を有し、前記第2半導体領域が前記第1導電型と反対の第2導電型を有することを特徴とする放射線検出器。 - 請求項1に記載の放射線検出器において、
前記放射線有感層が第1導電型の第3不純物濃度を有する半導体であることを特徴とする放射線検出器。 - 請求項3に記載の放射線検出器において、
前記第3不純物濃度は前記第1不純物濃度よりも低いことを特徴とする放射線検出器。 - 請求項4に記載の放射線検出器において、
前記第1半導体領域が第1導電型の炭化珪素基板であり、
前記放射線有感層が第1導電型のエピタキシャル成長層であり、
前記第2半導体領域が第2導電型のエピタキシャル成長層であることを特徴とする放射線検出器。 - 請求項2に記載の放射線検出器において、
前記放射線有感層が半絶縁性の炭化珪素基板であり、
前記第1半導体領域が第1導電型のエピタキシャル成長層であり、
前記第2半導体領域が第2導電型のエピタキシャル成長層であることを特徴とする放射線検出器。 - 請求項6に記載の放射線検出器において、
前記半絶縁性の炭化珪素基板が1×105Ωcm以上の抵抗率を有することを特徴とする放射線検出器。 - 請求項1に記載の放射線検出器において、
前記第1半導体領域と前記第2半導体領域の少なくともどちらか一方に各導電型と同一極性となる不純物をイオン注入によって添加し、前記イオン注入によって添加する不純物の注入深さは前記第1半導体領域もしくは前記第2半導体領域の厚さよりも浅いことを特徴とする放射線検出器。 - 請求項1に記載の放射線検出器において、
前記動作時の電圧が、1000V以下であることを特徴とする放射線検出器。 - 請求項1に記載の放射線検出器と、前記第1電極と前記第2電極との間に電圧を加える高圧電源と、を備える放射線検出装置。
- 請求項11に記載の放射線検出装置において、更に、
検出電流から波高の分布を測定する波高分析装置を備える放射線検出装置。 - 炭化珪素の放射線有感層と、
前記放射線有感層の第1主面で接し、少なくとも前記放射線有感層と接する領域において第1不純物濃度を有する第1半導体領域と、
前記第1主面と反対側の第2主面で接し、少なくとも前記放射線有感層と接する領域において第2不純物濃度を有する第2半導体領域と、
前記第1半導体領域を覆う第1不透明電極と、
前記第2半導体領域を覆う第2不透明電極と、を備え、
前記第1主面を境として、前記第1半導体領域と隣接する前記放射線有感層内の不純物濃度が前記第1不純物濃度と不連続であり、
前記第2主面を境として、前記第2半導体領域と隣接する前記放射線有感層内の不純物濃度が前記第2不純物濃度と不連続であり、
前記第1半導体領域と前記第2半導体領域の少なくとも一方はエピタキシャル成長層で形成されている
ことを特徴とする放射線検出器。 - 請求項13に記載の放射線検出器と、前記第1不透明電極と前記第2不透明電極との間に電圧を加える高圧電源と、を備える放射線検出装置。
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PCT/JP2015/056790 WO2016143020A1 (ja) | 2015-03-09 | 2015-03-09 | 放射線検出器およびそれを用いた放射線検出装置 |
PCT/JP2015/069453 WO2016143156A1 (ja) | 2015-03-09 | 2015-07-06 | 放射線検出器およびそれを用いた放射線検出装置 |
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DE112010005980T5 (de) * | 2010-11-08 | 2013-08-14 | Hitachi, Ltd. | Halbleiterelement |
TWI489414B (zh) * | 2011-07-25 | 2015-06-21 | Realtek Semiconductor Corp | 2d轉3d影像轉換裝置及其方法 |
DE112012005039B4 (de) * | 2011-12-01 | 2021-01-14 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
US20140023419A1 (en) * | 2012-07-17 | 2014-01-23 | Clover Technologies Group, Llc | Print cartridge with sensor pins |
JP5608714B2 (ja) * | 2012-07-30 | 2014-10-15 | 京セラドキュメントソリューションズ株式会社 | 定着装置及び画像形成装置 |
US9423359B2 (en) * | 2013-06-26 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer charging electromagnetic inspection tool and method of using |
US9515211B2 (en) * | 2013-07-26 | 2016-12-06 | University Of South Carolina | Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer |
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WO2016143020A1 (ja) | 2016-09-15 |
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