JP6267980B2 - 樹脂組成物、先供給型半導体封止剤および半導体装置 - Google Patents
樹脂組成物、先供給型半導体封止剤および半導体装置 Download PDFInfo
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- JP6267980B2 JP6267980B2 JP2014017725A JP2014017725A JP6267980B2 JP 6267980 B2 JP6267980 B2 JP 6267980B2 JP 2014017725 A JP2014017725 A JP 2014017725A JP 2014017725 A JP2014017725 A JP 2014017725A JP 6267980 B2 JP6267980 B2 JP 6267980B2
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- 239000011342 resin composition Substances 0.000 title claims description 53
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 239000008393 encapsulating agent Substances 0.000 title claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 34
- 239000003822 epoxy resin Substances 0.000 claims description 29
- 229920000647 polyepoxide Polymers 0.000 claims description 29
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 9
- 150000001451 organic peroxides Chemical class 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000945 filler Substances 0.000 claims description 4
- 239000005062 Polybutadiene Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 229920002857 polybutadiene Polymers 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 16
- 230000002950 deficient Effects 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- -1 amino, vinyl Chemical group 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000006254 rheological additive Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 230000003254 anti-foaming effect Effects 0.000 description 1
- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical class C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N dimethylmethane Natural products CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- OTRIMLCPYJAPPD-UHFFFAOYSA-N methanol prop-2-enoic acid Chemical compound OC.OC.OC(=O)C=C.OC(=O)C=C OTRIMLCPYJAPPD-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PXQLVRUNWNTZOS-UHFFFAOYSA-N sulfanyl Chemical class [SH] PXQLVRUNWNTZOS-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
表1および2は、実施例1〜9および比較例1〜3の樹脂組成物の組成、および後述する評価の結果を示す。表1および2において、樹脂組成物の組成は質量部で表されている。
実施例1〜9および比較例1〜3に対し、実装試験を行った。試験に用いた試料は、所定の形状の半導体チップを所定の形状の基板に実装することにより作製した。図2は、試料の作成に用いた基板および半導体チップの概形を示している。実装には、パナソニックファクトリーソリューションズ株式会社製のフリップチップボンダーFCB3を用いた。実装の条件は以下のとおりである。まず、基板を125℃で30分、ベークした。ベーク後、基板をステージ上に載せ、ディスペンサーで基板上に樹脂組成物を塗布した。樹脂組成物の塗布後、ステージ温度を70℃とし、半導体チップを基板に載せた後、図3の温度プロファイルに従って樹脂組成物の硬化および半導体チップと基板の接合を行った。荷重は15Nであった。接合後、後硬化として、165℃で60分熱処理した。
実施例1〜9および比較例1〜3に対し、吸湿リフロー試験を行った。実装性の評価に用いた試料のうち5つ(半導体チップを研磨していないもの)の試料を、下記条件の恒温恒湿槽に入れ、吸湿させた。なお下記の条件は、JDEC(Joint Electron Device Engineering Council)の耐湿レベル試験(IPC/JEDEC J-STD-20 Moisture Sensitivity Levels)のレベル3、2a、および2に相当する条件である。
(i)条件L.3
温度30℃、相対湿度60%で192時間
(ii)条件L.2a
温度30℃、相対湿度60%で696時間
(iii)条件L.2
温度85℃、相対湿度60%で168時間
吸湿後、最高温度260℃のリフロー炉に、試料を3回繰り返して通過させた後で、超音波画像観察を行った。さらに、吸湿とリフローを同条件で3回繰り返し、超音波画像観察を行った。超音波画像観察においてデラミネーション(樹脂組成物の剥がれ)が起きていたものを不良品と判断した。また、超音波画像観察に加え、抵抗値測定を行った。抵抗値測定においては、実装性の評価における抵抗値測定と同様、28〜32Ωの抵抗値を示したものを良品と判断し、この範囲外の抵抗値を示したものを不良品と判断した。
実施例1〜9および比較例1〜3に対し、bHAST(bias HAST、HASTはHighly Accelerated Temperature and Humidity Stress Testを示す)試験を行った。具体的には、ポリイミド上に形成された櫛歯型電極を用意した。電極の幅は30μm、電極間の空隙の幅は30μmであった。電極材料としては銅(Cu)を用い、表面をOSP(Organic Solderability Preservative)処理した。この櫛歯型電極に樹脂組成物を塗布し、165℃で60分、熱処理して硬化させた。さらに、電極の両端に電圧印加用のリード線をはんだ付けした。こうして得られた試料に対し、下記の条件で電圧を印加し、抵抗値が1×106Ω以下になるまでの時間を測定した。
印加条件:温度130℃、相対湿度85%、電圧3.5V
Claims (8)
- (A)式(1)の化合物(ただし、m+n=2.3〜4.0であり、R1およびR2はそれぞれ水素原子またはメチル基である)と、
(D)有機過酸化物と、
(E)シリカフィラーと、
(F)当該樹脂組成物の全重量に対し1〜8質量%のエポキシ樹脂と、
(G)シランカップリング剤と
を含む樹脂組成物。 - 前記(G)が、式(3)および式(4)の化合物の少なくとも1つを含む
- 前記(D)が、式(5)の化合物を含む
- 前記(D)が、式(6)の化合物を含む
- 前記(F)が、式(8)の化合物を含む
- (H)式(9)の化合物
- 請求項1ないし6のいずれか一項に記載の樹脂組成物を含む先供給型半導体封止剤。
- 請求項7に記載の先供給型半導体封止剤を用いて封止された半導体素子を有する半導体装置。
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JP2006332262A (ja) * | 2005-05-25 | 2006-12-07 | Showa Highpolymer Co Ltd | Led封止用硬化性樹脂組成物及びそれを用いたledパッケージ |
JP2010215786A (ja) * | 2009-03-17 | 2010-09-30 | Hitachi Chem Co Ltd | 樹脂ペースト組成物及びそれを用いた半導体装置 |
JP2012072305A (ja) * | 2010-09-29 | 2012-04-12 | Hitachi Chemical Co Ltd | 樹脂ペースト組成物 |
JP2012188465A (ja) * | 2011-03-08 | 2012-10-04 | Hitachi Chemical Co Ltd | 樹脂ペースト組成物及び半導体装置 |
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