JP6207348B2 - Resin composition, pre-feed semiconductor encapsulant, and semiconductor device - Google Patents
Resin composition, pre-feed semiconductor encapsulant, and semiconductor device Download PDFInfo
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- JP6207348B2 JP6207348B2 JP2013231976A JP2013231976A JP6207348B2 JP 6207348 B2 JP6207348 B2 JP 6207348B2 JP 2013231976 A JP2013231976 A JP 2013231976A JP 2013231976 A JP2013231976 A JP 2013231976A JP 6207348 B2 JP6207348 B2 JP 6207348B2
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- 239000004065 semiconductor Substances 0.000 title claims description 45
- 239000011342 resin composition Substances 0.000 title claims description 42
- 239000008393 encapsulating agent Substances 0.000 title claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 6
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 3
- 229920001577 copolymer Polymers 0.000 claims description 3
- 239000000945 filler Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 150000001451 organic peroxides Chemical class 0.000 claims description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 23
- 230000002950 deficient Effects 0.000 description 16
- 239000000047 product Substances 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 238000011156 evaluation Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 8
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- HFBMWMNUJJDEQZ-UHFFFAOYSA-N acryloyl chloride Chemical compound ClC(=O)C=C HFBMWMNUJJDEQZ-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 239000005457 ice water Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- CGHIBGNXEGJPQZ-UHFFFAOYSA-N 1-hexyne Chemical compound CCCCC#C CGHIBGNXEGJPQZ-UHFFFAOYSA-N 0.000 description 1
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 description 1
- NREFJJBCYMZUEK-UHFFFAOYSA-N 2-[2-[4-[2-[4-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]phenyl]propan-2-yl]phenoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound C1=CC(OCCOCCOC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OCCOCCOC(=O)C(C)=C)C=C1 NREFJJBCYMZUEK-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- 0 C=CC(**(CC1)CC2C1C1C*CC2C1)=O Chemical compound C=CC(**(CC1)CC2C1C1C*CC2C1)=O 0.000 description 1
- GAIQDQRQYRNIBU-UHFFFAOYSA-N CC(C)(Cc1ccc(C)cc1)Cc1ccc(C)cc1 Chemical compound CC(C)(Cc1ccc(C)cc1)Cc1ccc(C)cc1 GAIQDQRQYRNIBU-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QUZSUMLPWDHKCJ-UHFFFAOYSA-N bisphenol A dimethacrylate Chemical class C1=CC(OC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OC(=O)C(C)=C)C=C1 QUZSUMLPWDHKCJ-UHFFFAOYSA-N 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N dimethylmethane Natural products CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- OTRIMLCPYJAPPD-UHFFFAOYSA-N methanol prop-2-enoic acid Chemical compound OC.OC.OC(=O)C=C.OC(=O)C=C OTRIMLCPYJAPPD-UHFFFAOYSA-N 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- OTLDLKLSNZMTTA-UHFFFAOYSA-N octahydro-1h-4,7-methanoindene-1,5-diyldimethanol Chemical compound C1C2C3C(CO)CCC3C1C(CO)C2 OTLDLKLSNZMTTA-UHFFFAOYSA-N 0.000 description 1
- 125000000864 peroxy group Chemical group O(O*)* 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Polymerisation Methods In General (AREA)
- Polymerization Catalysts (AREA)
- Graft Or Block Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Sealing Material Composition (AREA)
Description
本発明は、樹脂組成物、先供給型半導体封止剤および半導体装置に関する。 The present invention relates to a resin composition, a pre-feed semiconductor encapsulant, and a semiconductor device.
半導体チップ（半導体素子）を基板（またはパッケージ）に実装する手法の一つにフリップチップ実装がある。フリップチップ実装は、半導体チップと基板とをバンプ（はんだボール）を用いて電気的に接続する技術である。バンプの周辺を補強するため、半導体チップと基板の間には樹脂組成物（いわゆるアンダーフィル剤）が充填される。フリップチップ実装においては、従来、半導体チップと基板とを接続した後、半導体チップと基板との間隙（ギャップ）に樹脂組成物を充填させるプロセス（以下「後供給型」プロセスという）が広く用いられている。 One technique for mounting a semiconductor chip (semiconductor element) on a substrate (or package) is flip chip mounting. Flip chip mounting is a technique for electrically connecting a semiconductor chip and a substrate using bumps (solder balls). In order to reinforce the periphery of the bump, a resin composition (so-called underfill agent) is filled between the semiconductor chip and the substrate. In flip chip mounting, conventionally, a process of connecting a semiconductor chip and a substrate and then filling a resin composition into a gap between the semiconductor chip and the substrate (hereinafter referred to as a “post-feed type” process) has been widely used. ing.
製品の小型化や高信頼性化の要求から、ギャップをより狭くすることが求められている。このため、狭ギャップ化を実現するため、銅ピラーを用いたフリップチップ実装が開発されている。しかし、後供給型プロセスでは狭ギャップ化への対応に問題があった。これに対し、近年、基板上に樹脂組成物を塗布し、その上から半導体チップを載せ、その後、樹脂組成物の硬化および半導体チップと基板との接続を行うプロセス（以下「先供給型」プロセスという）が開発されている。先供給型プロセス用の樹脂組成物には、狭いギャップへの対応から低粘性であること、フラックス無しで接合できること等、後供給型プロセス用の樹脂組成物とは異なる特性が求められる。先供給型プロセス用の樹脂組成物として、例えば特許文献１に記載のエポキシ樹脂組成物が知られている。 In order to reduce the size and reliability of products, it is required to narrow the gap. Therefore, in order to realize a narrow gap, flip chip mounting using a copper pillar has been developed. However, the post-feed type process has a problem in dealing with the narrowing of the gap. On the other hand, in recent years, a process of applying a resin composition on a substrate, placing a semiconductor chip thereon, and then curing the resin composition and connecting the semiconductor chip and the substrate (hereinafter referred to as “first supply type” process). Has been developed. The resin composition for the pre-feed type process is required to have characteristics different from those of the resin composition for the post-feed type process, such as low viscosity due to the narrow gap and bonding without flux. As a resin composition for a pre-feed process, for example, an epoxy resin composition described in Patent Document 1 is known.
エポキシ樹脂組成物は熱膨張係数が相対的に大きいため、接合部に悪影響を与える場合があった。これに対し本発明は、先供給型プロセス用の非エポキシ系樹脂組成物を提供する。 Since the epoxy resin composition has a relatively large coefficient of thermal expansion, it may adversely affect the joint. In contrast, the present invention provides a non-epoxy resin composition for a pre-feed process.
本発明は、（Ａ）式（１）の化合物（ただし、Ｒ１およびＲ２はそれぞれ水素原子またはメチル基である）と、（Ｂ）式（２）の化合物と、（Ｃ）式（３）の化合物と、（Ｄ）有機過酸化物と、（Ｅ）ブタジエンと無水マレイン酸の共重合体と、（Ｆ）シリカフィラーとを含む樹脂組成物を提供する。 The present invention relates to (A) a compound of formula (1) (wherein R1 and R2 are each a hydrogen atom or a methyl group), (B) a compound of formula (2), and (C) of formula (3) Provided is a resin composition comprising a compound, (D) an organic peroxide, (E) a copolymer of butadiene and maleic anhydride, and (F) a silica filler.
前記（Ｄ）が、式（４）の化合物であってもよい。
前記（Ｄ）が、式（５）の化合物であってもよい。
この樹脂組成物は、（Ｇ）シランカップリング剤を含んでもよい。 This resin composition may contain (G) a silane coupling agent.
前記（Ｇ）が、式（６）および（７）の少なくとも一方を含んでもよい。
この樹脂組成物は、（Ｈ）ビスマレイミドを含んでもよい。 This resin composition may contain (H) bismaleimide.
また、本発明は、上記いずれかの樹脂組成物を含む先供給型半導体封止剤を提供する。 Moreover, this invention provides the pre-feed type semiconductor sealing agent containing one of the said resin compositions.
さらに、本発明は、上記の先供給型半導体封止剤を用いて封止された半導体素子を有する半導体装置を提供する。 Furthermore, the present invention provides a semiconductor device having a semiconductor element encapsulated using the above-mentioned pre-supplied semiconductor encapsulant.
本発明によれば、非エポキシ系樹脂組成物を用いて半導体素子を封止することができる。 According to the present invention, it is possible to seal a semiconductor element using a non-epoxy resin composition.
本発明の樹脂組成物は、（Ａ）ＥＯ変性ビスフェノールＡジメタクリレート（2.2 Bis〔4-(Methacryloxy Ethoxy)Phenyl〕Propane）と、（Ｂ）トリシクロデカンジメタノールジアクリレート（Tricylodecane Dimethanol Diacrylate）と、（Ｃ）トリシクロデカンジメチルモノアクリレート（Tricylodecane Dimethyl Monoacrylate）と、（Ｄ）有機過酸化物と、（Ｅ）ブタジエンと無水マレイン酸共重合体と、（Ｆ）シリカフィラーとを含む。 The resin composition of the present invention comprises (A) EO-modified bisphenol A dimethacrylate (2.2 Bis [4- (Methacryloxy Ethoxy) Phenyl] Propane), (B) Tricyclolodecane Dimethanol Diacrylate, (C) Tricyclodecane Dimethyl Monoacrylate, (D) an organic peroxide, (E) butadiene and a maleic anhydride copolymer, and (F) a silica filler.
（Ａ）成分としては、式（１）の化合物が用いられる。なお、「ＥＯ変性」とはエチレンオキシドユニット（−ＣＨ2−ＣＨ2−Ｏ−）のブロック構造を有することを意味する。ここで、Ｒ１およびＲ２それぞれ水素原子（Ｈ）またはメチル基（ＣＨ3）である。また、ｍ＋ｎ＝２．３〜４．０であることが好ましい。（Ａ）成分は、樹脂組成物の全質量に対し５〜２７質量％含まれることが好ましい。
（Ｂ）成分としては、式（２）の化合物が用いられる。（Ｂ）成分は、樹脂組成物の全質量に対し１〜２７質量％含まれることが好ましい。
（Ｃ）成分としては、式（３）の化合物が用いられる。（Ｃ）成分は、樹脂組成物の全質量に対し０．０１〜０．３質量％含まれることが好ましい。
（Ｄ）成分としては、例えば、２，５−ジメチル−２，５−ビス（ｔ−ブチルパーオキシ）ヘキサン（式（４））または２，５−ジメチル−２，５−ビス（ｔ−ブチルパーオキシ）ヘキシン（式（５））が用いられる。（Ｄ）成分は、樹脂組成物の全質量に対し０．１〜０．６質量％含まれることが好ましい。
（Ｅ）成分は、樹脂組成物の全質量に対し１．５〜１１質量％含まれることが好ましい。
（Ｆ）成分は、樹脂組成物の全質量に対し５０〜６５質量％含まれることが好ましい。
(E) It is preferable that a component contains 1.5-11 mass% with respect to the total mass of a resin composition.
(F) It is preferable that 50-65 mass% of component is contained with respect to the total mass of a resin composition.
樹脂組成物は、上記の（Ａ）、（Ｂ）、（Ｃ）、（Ｄ）、（Ｅ）、および（Ｆ）成分に加えて、（Ｇ）シランカップリング剤および（Ｉ）ビスマレイミドの少なくとも一方を含んでもよい。 In addition to the components (A), (B), (C), (D), (E), and (F), the resin composition comprises (G) a silane coupling agent and (I) bismaleimide. At least one of them may be included.
（Ｉ）成分としては、式（６）および（７）の少なくとも一方が用いられる。
この樹脂組成物は、例えば、原料を、所定の配合で、ライカイ機、ポットミル、三本ロールミル、回転式混合機、二軸ミキサー等の混合機に投入し、混合することにより製造される。なお、樹脂組成物は、これ以外の方法により製造されてもよい。 This resin composition is produced, for example, by putting raw materials in a predetermined blend into a mixer such as a likai machine, a pot mill, a three-roll mill, a rotary mixer, a twin screw mixer, and the like. In addition, the resin composition may be manufactured by other methods.
この樹脂組成物は、例えば、半導体素子等の電子デバイスの封止、特に、いわゆる先供給型（pre-applied）プロセスにおける電子デバイスの封止に用いられる。先供給型プロセスとは、まず、基板に封止剤を塗布し、その上に半導体素子を載せた後、封止剤の硬化と、半導体素子と基板の接続とを行うプロセスをいう。 This resin composition is used, for example, for sealing electronic devices such as semiconductor elements, in particular for sealing electronic devices in so-called pre-applied processes. The pre-feed process refers to a process in which a sealing agent is first applied to a substrate, a semiconductor element is placed thereon, and then the sealing agent is cured and the semiconductor element and the substrate are connected.
図１は、本実施形態に係る樹脂組成物を用いて封止された半導体素子を有する半導体装置１０を例示する図である。半導体装置１０は、半導体チップ１と、基板２とを有する。半導体チップ１および基板２には、それぞれ、銅ピラー３が設けられている。半導体チップ１の銅ピラー３および基板２の銅ピラー３の間には、バンプ（はんだボール）４が設けられている。まず基板２上に、樹脂組成物５が例えばディスペンサーを用いて塗布される。例えばフリップチップボンダーを用いて、半導体チップ１と基板２とが位置合わせさせる。その後、バンプ４の融点以上の温度に加熱しつつ、所定の荷重で半導体チップ１を基板２に押し付ける。こうして、半導体チップ１と基板２とを接続するとともに、軟化した樹脂組成物によりギャップが充填される。なお、図１の構成はあくまで一例であり、本実施形態に係る半導体装置の構成はこれに限定されるものではない。
FIG. 1 is a diagram illustrating a
（１）樹脂組成物の調整
表１および表２は、実施例１〜１０および比較例１〜４の樹脂組成物の組成、および後述する評価の結果を示す。表１および表２において、樹脂組成物の組成は質量部で表されている。また、評価結果は、（不良品数）／（試料数）で表されている。
(1) Adjustment of Resin Composition Tables 1 and 2 show the compositions of the resin compositions of Examples 1 to 10 and Comparative Examples 1 to 4, and the results of evaluation described later. In Table 1 and Table 2, the composition of the resin composition is expressed in parts by mass. The evaluation result is expressed by (number of defective products) / (number of samples).
（Ａ）成分としては、新中村化学工業株式会社製のＢＰＥ−８０Ｎ（ｍ＋ｎ＝２．３）、ＢＰＥ−１００（ｍ＋ｎ＝２．６）、ＢＰＥ−２００（ｍ＋ｎ＝４．０）、またはＢＰＥ−５００（ｍ＋ｎ＝１０）が用いられた。 As the component (A), BPE-80N (m + n = 2.3), BPE-100 (m + n = 2.6), BPE-200 (m + n = 4.0), or BPE manufactured by Shin-Nakamura Chemical Co., Ltd. −500 (m + n = 10) was used.
（Ｂ）成分としては、共栄社化学株式会社製のＤＣＰ−Ａが用いられた。 As the component (B), DCP-A manufactured by Kyoeisha Chemical Co., Ltd. was used.
（Ｃ）成分は、以下のように合成した。合成に際して、乾燥管（塩化カルシウム管）、滴下ロート、温度計、テフロン（登録商標）プロペラ式攪拌棒、４つ口セパラブルフラスコを用いた。まず、トリシクロデカンジメタノール（東京化成工業社製Ｃａｓ番号２６８９６−４８−０）を１９．６ｇ（０．１ｍｏｌ）、トリエチルアミン（東京化成工業社製Ｃａｓ番号１２１−４４−８）を１０．１ｇ（０．１ｍｏｌ）、テトラヒドロフラン（東京化成工業社製Ｃａｓ番号１０９−９９−９）を２００ｍｌ、フラスコ中に量り取り、攪拌し均一溶液にした。なお、トリエチルアミン、テトラヒドロフランは予めモレキュラーシーブ３Ａにて脱水させて、ろ過したものを使用した。 The component (C) was synthesized as follows. In the synthesis, a drying tube (calcium chloride tube), a dropping funnel, a thermometer, a Teflon (registered trademark) propeller type stirring rod, and a four-neck separable flask were used. First, 19.6 g (0.1 mol) of tricyclodecane dimethanol (Tokyo Chemical Industry Co., Ltd., Cas number 26896-48-0) and 10.1 g of triethylamine (Tokyo Chemical Industry Co., Ltd., Cas No. 121-44-8). (0.1 mol) and tetrahydrofuran (Cas number 109-99-9, manufactured by Tokyo Chemical Industry Co., Ltd.) were weighed into 200 ml of a flask and stirred to obtain a homogeneous solution. Triethylamine and tetrahydrofuran were dehydrated in advance with a molecular sieve 3A and filtered.
次に、均一にした溶液を氷水浴にて冷却し、攪拌しながら塩化アクリロイル溶液５０ｍｌを滴下ロートよりゆっくり滴下した。塩化アクリロイル溶液としては、脱水済みのテトラヒドロフランに塩化アクリロイル（和光純薬工業製Ｃａｓ番号８１４−６８−６）を１７．０質量％になるように溶解させたものを使用した。 Next, the homogenized solution was cooled in an ice-water bath, and 50 ml of acryloyl chloride solution was slowly dropped from the dropping funnel while stirring. As the acryloyl chloride solution, a solution obtained by dissolving acryloyl chloride (Cas number 814-68-6, manufactured by Wako Pure Chemical Industries, Ltd.) in dehydrated tetrahydrofuran to 17.0% by mass was used.
滴下終了後、溶液を攪拌しながら氷水浴中で１時間攪拌、その後室温で１０時間攪拌し、反応させた。沈殿をろ別後、ろ液を集めて減圧下で溶媒を除去した。残渣をクロロホルム５００ｍｌへ溶解後、０．５Ｎ塩酸、飽和食塩水、３％炭酸水素ナトリウム水、飽和食塩水の順で処理、分液した。硫酸マグネシウムで脱水処理後、ろ過しエバポレータで溶媒を除去。シリカゲルカラムで分離精製し、式（３）の化合物を合成した。 After completion of dropping, the solution was stirred for 1 hour in an ice-water bath and then stirred at room temperature for 10 hours to be reacted. After the precipitate was filtered off, the filtrate was collected and the solvent was removed under reduced pressure. The residue was dissolved in 500 ml of chloroform, treated with 0.5N hydrochloric acid, saturated brine, 3% aqueous sodium hydrogen carbonate and saturated brine in this order and separated. After dehydration with magnesium sulfate, it is filtered and the solvent is removed with an evaporator. Separation and purification on a silica gel column was performed to synthesize a compound of formula (3).
（Ｄ）成分としては、化合物ｄ１またはｄ２が用いられた。化合物ｄ１としては、日油株式会社製のバーヘキサ２５Ｂが用いられた。化合物ｄ２としては、日油株式会社製のバーヘキシン２５Ｂが用いられた。（Ｅ）成分としては、Ｃｒａｙ Ｖａｌｌｅｙ社製のＲｉｃｏｎ１３０ＭＡ８が用いられた。（Ｆ）成分としては、アドマテックス株式会社製のＳＯＥ２が用いられた。（Ｇ）成分としては、化合物ｇ１およびｇ２が用いられた。化合物ｇ１としては、信越化学工業株式会社製のＫＢＭ４０３が用いられた。化合物ｇ２としては、信越化学工業株式会社製のＫＢＭ５０３が用いられた。（Ｈ）成分としては、Ｄｅｓｉｇｎｅｒ Ｍｏｌｅｃｕｌｅｓ Ｉｎｃ．製のＢＭＩ−１５００が用いられた。 As component (D), compound d1 or d2 was used. As compound d1, Barhexa 25B manufactured by NOF Corporation was used. As compound d2, Barhexin 25B manufactured by NOF Corporation was used. As the component (E), Ricon130MA8 manufactured by Cray Valley was used. As component (F), SOE2 manufactured by Admatechs Co., Ltd. was used. As the component (G), compounds g1 and g2 were used. As the compound g1, KBM403 manufactured by Shin-Etsu Chemical Co., Ltd. was used. As the compound g2, KBM503 manufactured by Shin-Etsu Chemical Co., Ltd. was used. As the component (H), Designer Moleculars Inc. BMI-1500 made by the manufacturer was used.
（２）実装試験
実施例１〜１０および比較例１〜４に対し、実装試験を行った。試験に用いた試料は、所定の形状の半導体チップを所定の形状の基板に実装することにより作製した。図２は、試料の作成に用いた基板および半導体チップの概形を示している。実装には、パナソニックファクトリーソリューションズ株式会社製のフリップチップボンダーＦＣＢ３を用いた。実装の条件は以下のとおりである。ステージ温度７０℃、１２５℃で３０分で基板ベーク、半導体チップを基板に載せた後、図３の温度プロファイルに従って樹脂組成物の硬化および半導体チップと基板の接合を行った。荷重は１５Ｎであった。接合後、後硬化として、１６５℃で６０分熱処理した。
(2) Mounting test The mounting test was done with respect to Examples 1-10 and Comparative Examples 1-4. The sample used for the test was prepared by mounting a semiconductor chip having a predetermined shape on a substrate having a predetermined shape. FIG. 2 shows an outline of the substrate and the semiconductor chip used for preparing the sample. Flip chip bonder FCB3 manufactured by Panasonic Factory Solutions Co., Ltd. was used for mounting. The implementation conditions are as follows. After baking the substrate and the semiconductor chip on the substrate at a stage temperature of 70 ° C. and 125 ° C. for 30 minutes, the resin composition was cured and the semiconductor chip and the substrate were bonded according to the temperature profile of FIG. The load was 15N. After bonding, heat treatment was performed at 165 ° C. for 60 minutes as post-curing.
上記のように作製した試料について、超音波画像観察、顕微鏡観察（外周部および開口部）、および抵抗値測定により評価した。超音波画像観察は、超音波映像装置（Scanning Acoustic Tomography、ＳＡＴ）により得られた画像を用いて行った。７つの試料を観察し、半導体チップの下に樹脂組成物が全面に充填されているか、およびボイドが発生しているか、という点を確認した。樹脂組成物が全面に充填されていないもの、およびボイドが確認されたものを不良品と判断した。顕微鏡観察としては、まず７つの試料について、半導体チップ外周部のフィレットを顕微鏡で観察した。フィレットにクラックが確認されたものを不良品と判断した。次に、２つの試料について、半導体チップ部分を研磨により除去した後で、開口部を顕微鏡で観察した。開口部にボイドが確認されたものを不良品と判断した。抵抗値測定については、試料の抵抗値測定パッドを用いて抵抗値を測定した。７つの試料を測定し、２８〜３２Ωの抵抗値を示したものを良品と判断し、この範囲外の抵抗値を示したものを不良品と判断した。 About the sample produced as mentioned above, it evaluated by ultrasonic image observation, microscope observation (an outer peripheral part and opening part), and resistance value measurement. Ultrasonic image observation was performed using an image obtained by an ultrasonic imaging device (Scanning Acoustic Tomography, SAT). Seven samples were observed, and it was confirmed whether the resin composition was filled on the entire surface under the semiconductor chip and whether voids were generated. Those in which the resin composition was not filled over the entire surface and those in which voids were confirmed were judged as defective products. As for microscopic observation, first, the fillet on the outer periphery of the semiconductor chip was observed with a microscope for seven samples. Those in which cracks were confirmed in the fillet were judged as defective. Next, about two samples, after removing the semiconductor chip part by grinding | polishing, the opening part was observed with the microscope. Those in which voids were confirmed in the opening were judged as defective. About resistance value measurement, resistance value was measured using the resistance value measurement pad of the sample. Seven samples were measured, and those showing resistance values of 28 to 32Ω were judged as good products, and those showing resistance values outside this range were judged as defective products.
（３）ヒートショック試験
実施例１〜１０および比較例１〜４に対し、ヒートショック試験を行った。実装性の評価に用いた試料のうち５つ（半導体チップを研磨していないもの）の試料を、液槽ヒートサイクル試験機に投入した。液槽ヒートサイクル試験機においては、最低温度−５５℃、最高温度１２５℃（各５分）のヒートサイクルが繰り返された。ヒートサイクル数が１００回、２５０回、５００回、７５０回、および１０００回となったところで試料を液槽ヒートサイクル試験機から取り出し、超音波画像観察、顕微鏡観察（外周部）、および抵抗値測定により評価した。超音波画像観察においては、デラミネーション（樹脂組成物の剥がれ）が起きていたものを不良品と判断した。外周部の顕微鏡観察においては、フィレットにクラックが確認されたものを不良品と判断した。抵抗値測定においては、実装性の評価における抵抗値測定と同様、２８〜３２Ωの抵抗値を示したものを良品と判断し、この範囲外の抵抗値を示したものを不良品と判断した。
(3) Heat shock test The heat shock test was done with respect to Examples 1-10 and Comparative Examples 1-4. Of the samples used for the evaluation of mountability, five samples (those without polishing the semiconductor chip) were put into a liquid bath heat cycle tester. In the liquid bath heat cycle tester, the heat cycle of the minimum temperature of −55 ° C. and the maximum temperature of 125 ° C. (5 minutes each) was repeated. When the number of heat cycles is 100 times, 250 times, 500 times, 750 times, and 1000 times, the sample is taken out from the liquid bath heat cycle tester, and subjected to ultrasonic image observation, microscopic observation (outer peripheral portion), and resistance value measurement. It was evaluated by. In ultrasonic image observation, what had undergone delamination (peeling of the resin composition) was judged as a defective product. In the microscopic observation of the outer peripheral portion, a case where a crack was confirmed in the fillet was judged as a defective product. In the resistance value measurement, similarly to the resistance value measurement in the evaluation of mountability, those showing a resistance value of 28 to 32Ω were judged as non-defective products, and those showing resistance values outside this range were judged as defective products.
（４）評価結果
実施例１、２、９、および１０、並びに比較例３および４は、（Ａ）成分および（Ｂ）成分の含有量を異ならせた場合の評価結果を示している。（Ａ）成分を含有しない試料（比較例３）および（Ａ）成分を２７．３９質量％含有する試料（比較例４）においては、超音波画像観察、開口部の顕微鏡観察、および抵抗値測定の少なくとも１つにおいて不良品が発生したが、それ以外の試料（実施例１、２、９、および１０）においては不良品は発生せず、良好な特性を示した。 Examples 1, 2, 9, and 10 and Comparative Examples 3 and 4 show the evaluation results when the contents of the component (A) and the component (B) are varied. In the sample containing no component (A) (Comparative Example 3) and the sample containing 27.39% by mass of the component (A) (Comparative Example 4), ultrasonic image observation, microscopic observation of the opening, and resistance measurement A defective product was generated in at least one of the samples, but no defective product was generated in the other samples (Examples 1, 2, 9, and 10), and good characteristics were exhibited.
実施例１、４、および５は、（Ｃ）成分の含有量を異ならせた場合の評価結果を示している。実施例１および３は、（Ｇ）成分を異ならせた場合の評価結果を示している。比較例１は、（Ｃ）成分を含有しない場合の評価結果を示している。（Ｃ）成分を含有しない試料（比較例１）では、実装試験の開口部の顕微鏡観察において不良品が発生したが、それ以外の試料（実施例１および３〜５）においては、不良品は発生せず、良好な特性を示した。 Examples 1, 4, and 5 show the evaluation results when the content of the component (C) is varied. Examples 1 and 3 show the evaluation results when the component (G) is varied. The comparative example 1 has shown the evaluation result when not containing (C) component. In the sample (Comparative Example 1) that does not contain the component (C), a defective product was generated in the microscopic observation of the opening portion of the mounting test. In the other samples (Examples 1 and 3 to 5), the defective product was It did not occur and showed good characteristics.
実施例１、６、および７、並びに比較例２は、（Ａ）成分において、ｍ＋ｎの値を異ならせた場合の評価結果を示している。ｍ＋ｎ＝１０の（Ａ）成分を用いた試料（比較例２）では、超音波画像観察および抵抗値測定において不良品が発生したが、それ以外の試料（ｍ＋ｎ＝２．３〜４．０のもの）においては、不良品は発生せず、良好な特性を示した。 Examples 1, 6, and 7 and Comparative Example 2 show the evaluation results when the value of m + n is varied in the component (A). In the sample using the component (A) of m + n = 10 (Comparative Example 2), a defective product was generated in the ultrasonic image observation and the resistance value measurement, but the other samples (m + n = 2.3 to 4.0). No.) showed no defective product and showed good characteristics.
実施例１および８は、（Ｄ）成分を異ならせた場合の評価結果を示している。（Ｄ）成分として式（４）および（５）の化合物のいずれを用いても、不良品は発生せず、良好な特性を示した。 Examples 1 and 8 show the evaluation results when the component (D) is varied. When any of the compounds of the formulas (4) and (5) was used as the component (D), no defective product was generated and good characteristics were exhibited.
１…半導体チップ、２…基板、３…銅ピラー、４…バンプ、５…樹脂組成物 DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 2 ... Board | substrate, 3 ... Copper pillar, 4 ... Bump, 5 ... Resin composition
Claims (8)
（Ｅ）１．５〜１１質量％の、ブタジエンおよび無水マレイン酸の共重合体と、
（Ｆ）５０〜６５質量％のシリカフィラーと
を含む樹脂組成物。 And (A) of 5 to 27 mass%, the compound of formula (1) (wherein, R1 and R2 are Ri hydrogen atom or a methyl group der respectively, m + n = Ru 2.3 to 4.0 Der),
(E) 1.5-11% by weight of a copolymer of butadiene and maleic anhydride;
(F) The resin composition containing 50-65 mass% silica filler.
ことを特徴とする請求項１ないし３のいずれか一項に記載の樹脂組成物。 (G) A silane coupling agent is contained. The resin composition as described in any one of Claim 1 thru | or 3 characterized by the above-mentioned.
ことを特徴とする請求項１ないし５のいずれか一項に記載の樹脂組成物。 (H) Bismaleimide is contained. The resin composition as described in any one of Claim 1 thru | or 5 characterized by the above-mentioned.
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