JP6178139B2 - Spring, microstructure and spring manufacturing method - Google Patents

Description

  The present invention relates to a spring, a microstructure, and a method for manufacturing the spring.

  In recent years, micro devices have been actively developed by MEMS (Micro Electro Mechanical System) technology. The MEMS technology is based on a manufacturing technology of a semiconductor integrated circuit in which a thin film is formed on a wafer such as a semiconductor substrate and this thin film is processed. Some MEMS elements manufactured by the MEMS technology include a movable structure such as a micro vibration element.

  The micro vibration element includes a vibrator that is movably supported by a spring. This micro vibration element can be integrated with other semiconductor devices, and has a feature that the area occupied by the vibrator is small. For this reason, utilization as an energy harvester that converts vibration energy in the environment into electrical energy has been studied. For example, a power generation element that generates minute electric power such as an electret minute power generation element has been proposed (for example, non- (See Patent Document 1). This power generation element includes a movable electrode formed on the vibrator, a fixed electrode electrically connected to the movable electrode via a spring that supports the vibrator, and an electret that holds electric charges. By doing so, the movable electrode and the electret are repeatedly brought close to and away from each other, and a current is generated by moving the electric charge between the movable electrode and the fixed electrode.

When the power generation element converts vibration energy into electric energy, the vibrator must resonate with vibration existing in the environment, and the majority of vibrations in the environment have a low frequency of several to several tens [kHz]. Therefore, it is desirable that the vibrator also resonates at a low frequency. For this reason, the spring that supports the vibrator is required to have a spring constant as small as possible (for example, see Non-Patent Documents 1 and 2). Therefore, in order to reduce the spring constant of the spring, it has been proposed to produce a high aspect ratio spring by MEMS technology (see, for example, Non-Patent Document 3). In this spring, by using Parelin (registered trademark) resin (Young's modulus: ~ 4 [GPa]) as a material, the spring constant can be reduced compared to conventional silicon (Young's modulus: 130 [GPa]), It is possible to resonate the vibrator at a low frequency of several to several tens [kHz].

  However, parylene resin is a non-conductive material. For this reason, when a spring made of a non-conductive material having a low Young's modulus, such as parylene resin, is used as a power generation element, the spring must be provided with a structure for electrically connecting the movable electrode and the fixed electrode. Don't be. Therefore, conventionally, it has been proposed to encapsulate conductive nanometal ink using a capillary phenomenon inside a hollow spring (see, for example, Non-Patent Document 4).

C. Marboutin, Y. Suzuki and N. Kasagi, "Optimal Design of Micro Electret Generator for Energy Harvesting", 7th Int. Workshop on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS 2007), Freiburg, Nov. 28- 29, 2007, pp. 141-144. K. Najafi, T. Galchev, E.E. Aktakka, R.L.Peterson, and J. McCullagh, “MICROSYSTEMS FOR ENERGY HARVESTING”, Digest Tech. Papers, TRANSDUCERS2011, p. 1845, Beijing, China, June 2011. Y. Suzuki and Y.-C. Tai, "Micromachined High-Aspect-Ratio Parylene Spring and Its Application to Low-frequency Accelerometers", J. Microelectromech. Syst., Vol. 15, No. 5, pp. 1364-1370 (2006). T. Tsutsumino, Y. Suzuki, N. Sakurai, N. Kasagi and Y. Sakane, "Nano-metal Ink Based Electrode Embedded in Parylene Structures with the Aid of the Capillary Effect", 20th IEEE Int. Conf. Micro Electro Mechanical Systems (MEMS 2007), Kobe, 2007, pp. 313-316. K. Machida et. Al., “Novel global planarization technology dielectrics using spin on glass film transfer and hot pressing”, J. Vac. Sci. Technol. B, Vol. 16, No. 3, pp. 1093-1097, 1998

  However, the configuration in which the nanometal ink is sealed inside the spring has a complicated manufacturing process, and when the nanometal ink enters or does not enter the hollow structure due to a manufacturing error of the hollow structure due to the use of capillary action. The yield was bad.

  Then, an object of this invention is to provide the manufacturing method of the spring which has an electroconductivity with a simple manufacturing process and a high yield, and a spring.

In order to solve the problems as described above, the spring according to the present invention, a spring body made of an elastic material, formed on the surface of the spring body, and a conductive layer made of conductive material, the elastic material, parylene It is made of (registered trademark) resin, and the conductive material is made of any one of water-dispersed polythiophene derivatives, polyaniline, polypyrrole, polythiophene, and polyacetylene having a Young's modulus lower than that of the elastic material.

  The microstructure according to the present invention is a microstructure including a vibrator, a spring having one end connected to the vibrator, and a support portion to which the other end of the spring is connected. It consists of the spring mentioned above, It is characterized by the above-mentioned.

  The spring manufacturing method according to the present invention includes a step of forming a spring body made of an elastic material and a step of forming a conductive layer made of a conductive material on the surface of the spring body. .

  According to the present invention, by forming a conductive layer on the surface of the main body, it is possible to realize a spring having a conductivity that is easy to manufacture and has a high yield.

FIG. 1 is a plan view showing a configuration of a microstructure provided with a spring according to the present embodiment. FIG. 2 is a cross-sectional view of a main part of the spring according to the present embodiment. 3 is a cross-sectional view taken along the line II of FIG. FIG. 4 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 5 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 6 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 7 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 8 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 9 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 10 is a diagram for explaining a manufacturing method of the microstructure including the spring according to the first embodiment of the present invention. FIG. 11 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 12 is a diagram for explaining a manufacturing method of the microstructure including the spring according to the first embodiment of the present invention. FIG. 13 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 14 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the first embodiment of the present invention. FIG. 15 is a diagram for explaining a manufacturing method of the microstructure including the spring according to the first embodiment of the present invention. FIG. 16 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the second embodiment of the present invention. FIG. 17 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the second embodiment of the present invention. FIG. 18 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the second embodiment of the present invention. FIG. 19 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the second embodiment of the present invention. FIG. 20 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the second embodiment of the present invention. FIG. 21 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the second embodiment of the present invention. FIG. 22 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the second embodiment of the present invention. FIG. 23 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the third embodiment of the present invention. FIG. 24 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the third embodiment of the present invention. FIG. 25 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the third embodiment of the present invention. FIG. 26 is a diagram for explaining a manufacturing method of a microstructure including a spring according to the fourth embodiment of the present invention.

[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings. In the following, a case where the spring according to the present embodiment is applied to a microstructure will be described as an example.

<Structure of microstructure>
The microstructure shown in FIGS. 1 to 3 is connected to a pair of opposite sides of the opening 1a and a frame member 1 having a substantially rectangular opening 1a formed in the center with a substantially rectangular opening 1a in plan view. A pair of springs 2 and a vibrator 3 that is formed in a substantially rectangular shape in plan view, the other ends of the springs 2 are connected to a pair of opposite sides, and are supported so as to be movable in the opening 1a.

The frame member 1 is a plate-like member that supports the vibrator 3 via the spring 2. As shown in FIG. 3 , the frame member 1 is composed of an annular base portion 11 and a conductive layer 12 that covers the surface of the base portion 11.
Here, as a material of the base 11, for example, silicon, polyimide, glass epoxy, PDMS (polydimethylsiloxane), glass, acrylic resin, or the like is used. As the conductive layer 12, a water-dispersed polythiophene derivative (PEDOT-PSS), polyaniline, polypyrrole, polythiophene, polyacetylene, or the like is used.

  The spring 2 is a spring member that supports the vibrator 3 so as to vibrate by connecting one end to the frame member 1 and the other end to the vibrator 3. Such a spring 2 includes a spring main body 21 made of an elastic material and a conductive layer 22 formed on the surface of the spring main body 21 and made of a conductive material.

As a material of the spring body 21, a material having a low Young's modulus is used in order to reduce the spring constant of the spring 2. For example, a paraxylylene-based polymer such as Parelin (registered trademark) resin (Young's modulus: ˜4 [GPa]) can be used. By using such a material, when the shape of the spring 2 is the same, the spring constant of the spring 2 can be reduced as compared with the case where a material having a high Young's modulus is used.
Further, as shown in FIG. 2, the spring main body 21 has an annular frame portion 21 a having a rectangular shape in plan view, one end connected to both ends of one long side of the frame portion 21 a, and the other end connected to the frame member 1. A pair of rod-shaped frame-member-side beam portions 21b and a pair of rod-shaped transducer-side beam portions whose one ends are connected in the vicinity of both ends of the other long side of the frame portion 21a and whose other ends are connected to the transducer 3. 21c.

On the other hand, as the material of the conductive layer 22, a material having conductivity and having a Young's modulus lower than that of the spring body 21 is used. For example, a water-dispersed polythiophene derivative (PEDOT-PSS), polyaniline, polypyrrole, polythiophene, polyacetylene, or the like can be used. Thereby, the influence which the conductive layer 22 has on the spring constant of the spring 2 can be ignored. That is, the spring constant of the spring 2 will be mainly dependent on the characteristics of the spring body 21, by using a low Young's modulus material to the material of the spring body 21, as described above, the spring constant is low spring 2 Can be realized.

The vibrator 3 is a member that causes natural vibration based on vibration energy received from the external environment, such as vibration of the microstructure. Such a vibrator 3 includes a base portion 31 that is substantially rectangular in plan view, and a conductive layer 32 that covers the surface of the base portion 31.
Here, as a material of the base 31, for example, silicon, polyimide, glass epoxy, PDMS (polydimethylsiloxane), glass, acrylic resin, or the like is used. As the conductive layer 12, a water-dispersed polythiophene derivative (PEDOT-PSS), polyaniline, polypyrrole, polythiophene, polyacetylene, or the like can be used.
On the other hand, as the material of the conductive layer 32, water-dispersed polythiophene derivative (PEDOT-PSS), polyaniline, polypyrrole, polythiophene, polyacetylene, or the like can be used.

  In such a microstructure, when the user receives vibration energy from the external environment, for example, when a user shakes a device including the microstructure, the vibrator 3 resonates and the vibrator 3 is relative to the frame member 1. Move on. Here, the vibrator 3 is electrically connected to the frame member 1 via the spring 2. Thereby, for example, a fixed electrode is formed on the frame member 1, and a movable electrode electrically connected to the fixed electrode via the conductive layer 22 of the spring 2 is formed on the frame member 1, and in the vicinity of the moving path of the vibrator 3. By providing an electret for holding charges and providing an electrode for electrostatically inducing the charges, the microstructure can function as a power generation element. In this case, when the vibrator 3 vibrates, the movable electrode and the electret are repeatedly approached and separated from each other, so that the charge is repeatedly moved between the movable electrode and the fixed electrode, and as a result, an alternating current is generated. Will be.

<Method for manufacturing microstructure>
Next, with reference to FIGS. 4-15, the manufacturing method of the microstructure provided with the spring 2 concerning this Embodiment is demonstrated.

First, as shown in FIG. 4, a substrate 100 is prepared in which first oxide films 101 and 102 are formed on an upper surface and a lower surface. In this embodiment, the substrate 100 is made of a silicon substrate having a thickness of 600 [μm], and the first oxide films 101 and 102 made of silicon oxide having a thickness of 2 [μm] are formed by thermally oxidizing the silicon substrate. Form.
Then, a resist material is applied onto the first oxide film 101 on the upper surface of the substrate 100, and the resist material is exposed using a mask having a desired pattern, whereby a desired material on the first oxide film 101 is exposed. A resist pattern 103 having an opening at a position is formed.

  After the resist pattern 103 is formed, the first oxide film 101 is selectively removed by etching using the resist pattern 103 as a mask, and the substrate 100 is exposed from the opening of the resist pattern 103 as shown in FIG. Here, the first oxide film 101 can be removed, for example, by wet etching with a buffered hydrofluoric acid solution.

After removing a part of the first oxide film 101, the substrate 100 is etched using the first oxide film 101 as a mask to form a groove 104 in the substrate 100 as shown in FIG. This groove 104 is the mold of the spring 2.
Here, the etching of the substrate 100 can be performed by known DRIE (Deep Reactive Ion Etching) such as ICP-RIE (ICP: Inductive Coupled Plasma, RIE: Reactive Ion Etching). In the present embodiment, the trench 104 having a depth of 450 [μm] is formed in the substrate 100 exposed from the opening of the first oxide film 101. At this time, the resist pattern 103 is ashed during the etching of the substrate 100 and disappears.

  After the trench 104 is formed, as shown in FIG. 7, the first oxide films 101 and 102 are removed by etching. Here, the first oxide films 101 and 102 can be removed, for example, by wet etching with a buffered hydrofluoric acid solution.

  After removing the first oxide films 101 and 102, as shown in FIG. 8, second oxide films 105 and 106 are formed on the upper surface of the substrate 100 including the inside of the trench 104 and the lower surface of the substrate 100. In this embodiment, the substrate 100 is thermally oxidized to form second oxide films 105 and 106 having a thickness of 2 [μm].

  After forming the second oxide films 105 and 106, as shown in FIG. 9, a resin 107 is deposited on the second oxide film 105 on the upper surface of the substrate 100 until the groove 104 is filled. In the present embodiment, Parylene (registered trademark) is deposited as the resin 107 by a known CVD (Chemical Vapor Deposition) method.

  After the resin 107 is deposited, only the resin 107 deposited on the upper surface of the substrate 100 is selectively removed as shown in FIG. Here, the resin 107 can be removed by, for example, a known etch back method using oxygen plasma.

  After removing the resin 107 on the upper surface of the substrate 100, a resist material is applied onto the second oxide film 106 on the lower surface side of the substrate 100, and the resist material is exposed using a mask having a desired pattern. As shown in FIG. 11, a resist pattern 108 having an opening formed at a desired position on the second oxide film 106 is formed.

After forming the resist pattern 108, as shown in FIG. 12, the second oxide film 106 is removed by etching using the resist pattern 108 as a mask. Thereafter, the holding substrate 109 is prepared, the upper surface of the substrate 100 is bonded to the upper surface of the holding substrate 109, and the substrate 100 is fixed on the holding substrate 109.
Here, the second oxide film 106 can be removed, for example, by wet etching with a buffered hydrofluoric acid solution. As the holding substrate 109, for example, a silicon substrate can be used. Further, the adhesion of the holding substrate 109 can be realized by using, for example, an adhesive.

  After fixing the substrate 100 to the holding substrate 109, as shown in FIG. 13, the substrate 100 is etched (over-etched) from the lower surface side using the second oxide film 106 as a mask. This etching can be performed by known DRIE such as ICP-RIE. In this embodiment, the substrate 100 is etched by about 600 [μm] by ICP-RIE. At this time, since the second oxide film 105 serves as a stop layer, the resin 107 formed on the upper surface side of the substrate 100 is not etched.

After the substrate 100 is etched, as shown in FIG. 14, after removing the substrate 100 from the holding substrate 109, the second oxide films 105 and 106 are selectively removed by etching. Here, the second oxide films 105 and 106 can be removed, for example, by wet etching with a buffered hydrofluoric acid solution. As a result, the groove 104 in which the resin 107 is embedded is removed, and the resin 107 is exposed.

After removing the second oxide films 105 and 106, a conductive layer 110 is formed on the surface of the substrate 100 as shown in FIG. In the present embodiment, the substrate 100 is immersed in a PEDOT-PSS solution (manufactured by Heraeus, Germany), pulled up, and heated in an oven at 120 [° C.] for 30 minutes, whereby the conductive layer 110 is formed on the surface of the substrate 100. Form.
Thereby, the microstructure provided with the spring 2 in which the conductive layer 22 is formed on the surface of the spring main body 21 is produced.

  As described above, according to the present embodiment, by forming the conductive layer 22 on the surface of the spring body 21 of the spring 2, it is possible to realize a spring having a conductivity that is easy to manufacture and has a high yield. Can do.

  Moreover, in this Embodiment, since the electroconductive layer 22 can be formed in the surface of the spring main body 21 by immersing, it can give a spring electroconductivity more easily.

[Second Embodiment]
Next, a second embodiment according to the present invention will be described. In the present embodiment, the structure corresponding to the resin 107 and the conductive layer 110 to be the spring 2 and the first embodiment is manufactured by the STP (Spin-coating film Transfer and hot-Pressing technology) method. It is. Therefore, in this embodiment, the same name and code are given to the same configuration as that of the first embodiment, and the description is omitted as appropriate.

<Method for manufacturing microstructure>
First, as shown in FIG. 8, the substrate 100 is prepared in which the second oxide films 105 and 106 are formed on the upper surface of the substrate 100 including the inside of the groove 104 and the lower surface of the substrate 100.

Next, as shown in FIG. 16, a non-conductive resin layer 201 is formed on the base film 200 by spin-coating a liquid non-conductive resin on the base film 200 and temporarily curing the resin.
In the present embodiment, a liquid Parylene (registered trademark) resin is applied as the non-conductive resin layer 201. As the base film 200, a transfer film (thickness 50 [μm]) manufactured by NTT-AT is used. Further, in order to facilitate the peeling of Parylene (registered trademark) resin from the base film 200 in a later step, a surface treatment agent (Film Conditioner S-101 manufactured by NTT-AT) is applied in advance to the upper surface of the base film 200. You may do it.

  After the nonconductive resin layer 201 is formed, the conductive resin layer 202 is formed by spin-coating a liquid conductive resin on the nonconductive resin layer 201. In the present embodiment, the conductive resin layer 202 is formed by spin coating a PEDOT-PSS solution (manufactured by Heraeus, Germany) on the non-conductive resin layer 201.

  After forming the conductive resin layer 202, as shown in FIG. 18, the base film 200 is thermocompression-bonded from the surface on the conductive resin layer 202 side onto the second oxide film 105 of the substrate 100 shown in FIG. . This thermocompression bonding can be performed, for example, by applying a load of 10 [kgf] for 1 minute in a processing chamber in which the pressure is reduced to 20 [Pa] and the temperature is set to 120 [° C.]. When thermocompression bonding is performed in a state where a vacuum is maintained in this way, the conductive resin layer 202 and the non-conductive resin layer 201 on the base film 200 have a second oxide film 105 on the surface as shown in FIG. It is embedded in the formed groove 104. As a result, a conductive resin layer 202 'is formed on the second oxide film 105, and a nonconductive resin layer 201' is formed on the conductive resin layer 202 '.

  After the thermocompression bonding, the base film 200 is peeled from the substrate 100 as shown in FIG. Subsequently, the non-conductive resin layer 201 ′ and the conductive resin layer 202 ′ are heated at 120 [° C.] for 1 hour. Then, as shown in FIG. 21, the non-conductive resin layer 201 ′ and the conductive resin layer 202 ′ are attached to the groove 104 having the second oxide film 105 formed on the surface.

Subsequently, as shown in FIG. 22, the non-conductive resin layer 201 ′ and the conductive resin layer 202 ′ on the upper surface of the substrate 100 are selectively removed to expose the second oxide film 105. The selective removal of the non-conductive resin layer 201 ′ and the conductive resin layer 202 ′ can be performed by, for example, an etch-back method using a known oxygen plasma.
The process after selectively removing the non-conductive resin layer 201 ′ and the conductive resin layer 202 ′ is the same as the process after FIG. 11 described in the first embodiment. In the steps after FIG. 11, the non-conductive resin layer 201 ′ and the conductive resin layer 202 ′ correspond to the resin 107 in the first embodiment, and the non-conductive resin layer 201 ′ and the conductive resin layer 201 ′ The resin layer 202 ′ is used as the spring body 21, and the conductive layer 22 is formed on the surface of the spring body 21.

  As described above, according to the present embodiment, the conductive layer 22 is formed on the surface of the spring main body 21 of the spring 2 by the STP method, whereby a spring having a conductivity that is easy to manufacture and has a high yield. Can be realized.

  When a spring having a high aspect ratio is manufactured, in general spin coating, bubbles (voids) enter, and therefore it is difficult to fill the groove with the material. Further, in the method using CVD, the target material is scattered also in the region other than the wafer, so that the material cost is high and the production takes time. On the other hand, in this embodiment, the spring 2 can be manufactured more easily by manufacturing the spring 2 having the conductive layer 22 on the surface of the spring body 21 by the STP method.

[Third Embodiment]
Next, a third embodiment according to the present invention will be described. In the present embodiment, an SOI (Silicon on Insulator) substrate is used as the substrate 100 in the first embodiment described above. Therefore, in the present embodiment, the same components as those in the first embodiment are denoted by the same names and reference numerals, and description thereof will be omitted as appropriate.

<Method for manufacturing microstructure>
First, an SOI substrate 300 is prepared (see FIG. 23) . The SOI substrate 300 is a substrate in which a surface silicon layer 303 is formed on a silicon base 301 via a buried insulating layer 302. The thickness of each layer of the SOI substrate 300 in this embodiment is 400 [μm] for the silicon base 301, 2 [μm] for the buried insulating layer 302, and 25 [μm] for the surface silicon layer 303.

  Then, the first oxide films 311 and 312 are formed on the upper surface and the lower surface of the SOI substrate 300 by thermally oxidizing the SOI substrate 300, and then the first method is performed by the same method as described with reference to FIG. A resist pattern having an opening formed at a desired position on the oxide film 311 is formed. Subsequently, the first oxide film 311 is selectively removed by etching using the resist pattern as a mask by a method equivalent to the method described with reference to FIG. 5, and the silicon of the SOI substrate 300 is opened from the opening of the resist pattern. The base 301 is exposed.

After the silicon base 301 is exposed, the silicon base 301 is etched using the first oxide film 311 as a mask and the buried insulating layer 302 as an etch stop layer, thereby forming a groove 104 in the silicon base 301 as shown in FIG. .
The removal of the silicon base 301 can be performed by a known DRIE such as ICP-RIE.

  After the silicon base 301 is etched, as shown in FIG. 24, the first oxide films 311 and 312 are removed by etching. Here, the first oxide films 311 and 312 can be removed, for example, by wet etching with a buffered hydrofluoric acid solution.

After removing the first oxide films 311 and 312, second oxide films 314 and 315 are formed on the upper and lower surfaces of the SOI substrate 300 including the inside of the trench 104, as shown in FIG. In this embodiment, the SOI substrate 300 is thermally oxidized to form second oxide films 314 and 315 having a thickness of 2 [μm].
The steps after the formation of the second oxide films 314 and 315 are equivalent to the steps after FIG. 9 described in the first embodiment.

  As described above, according to the present embodiment, by using the SOI substrate as the substrate 100 and forming the conductive layer 22 on the surface of the spring main body 21 of the spring 2, the manufacturing process is easy and the conductivity is high. A spring having the property can be realized.

  When forming a groove using a silicon substrate, the dependency of DRIE on the wafer surface occurs, and if a plurality of fine structures are produced in the wafer, the depth of the groove varies depending on the position in the wafer due to the microloading effect and the like. End up. On the other hand, in this embodiment, a trench having a desired depth can be more easily formed by using the buried insulating layer 302 in the SOI substrate 300 as an etch stop layer. Thereby, a yield can also be improved.

[Fourth Embodiment]
Next, a fourth embodiment according to the present invention will be described. Note that this embodiment uses the SOI substrate 300 in which the second oxide films 314 and 315 described in the third embodiment are formed in the second embodiment described above. Therefore, in the present embodiment, the same components and the same names as those in the first to third embodiments are denoted by the same names and reference numerals, and the description thereof is omitted as appropriate.

<Method for manufacturing microstructure>
First, with respect to the SOI substrate 300 on which the second oxide films 314 and 315 described with reference to FIG. 25 are formed, the non-conductive resin layer 201 and the conductive resin described with reference to FIGS. The base film 200 on which the layer 202 is formed is thermocompression bonded by a method equivalent to the method described with reference to FIGS. 18 and 19, and then the base film 200 is peeled as shown in FIG.
The process after peeling the base film 200 is equivalent to the process after FIG. 21 demonstrated in 2nd Embodiment mentioned above.

  As described above, according to the present embodiment, the conductive layer 22 is formed on the surface of the spring body 21 of the spring 2 by the STP method using the SOI substrate, so that the manufacturing process is easy and the yield is high. Can be realized.

  In particular, the spring 2 can be manufactured with a high yield by using an SOI substrate. Further, by using the STP method, the spring 2 having conductivity can be manufactured more easily.

  In the first to fourth embodiments, the spring body 21 of the spring 2 has a rectangular frame portion 21a having a rectangular shape in plan view, a pair of frame member side beam portions 21b connected to the frame portion 21a, and a pair of frames. Although the case where it was comprised from the vibrator side beam part 21c was demonstrated to the example, it cannot be overemphasized that the shape of the spring main body 21 is not limited to this but can be set freely suitably.

  In the first to fourth embodiments, the case where the microstructure is applied to the vibration structure of the power generation element has been described as an example. However, if the microstructure uses the spring 2 having conductivity, Can be applied.

  The present invention can be applied to various devices using a conductive spring such as a power generation element.

  DESCRIPTION OF SYMBOLS 1 ... Frame member, 2 ... Spring, 3 ... Vibrator, 21 ... Spring main body, 21a ... Frame part, 1b ... Frame member side beam part, 21c ... Vibrator side beam part, 22 ... Conductive layer, 100 ... Substrate, 101 , 102 ... second oxide film, 103 ... resist pattern, 104 ... groove, 105, 106 ... second oxide film, 107 ... resin, 108 ... resist pattern, 109 ... holding substrate, 110 ... conductive layer, 200 ... base Film, 201, 201 '... non-conductive resin layer, 202, 202' ... conductive resin layer, 300 ... SOI substrate, 301 ... silicon base, 302 ... buried insulating layer, 303 ... surface silicon layer, 311, 312 ... first 2 oxide films, 314, 315... Second oxide films.

Claims (3)

A spring body made of an elastic material;
Formed on the surface of the spring body, and comprising a conductive layer made of a conductive material,
The elastic material is
Made of parelin (registered trademark) resin,
The conductive material is
A spring comprising any one of water-dispersed polythiophene derivatives, polyaniline, polypyrrole, polythiophene, and polyacetylene having a Young's modulus lower than that of the elastic material. A microstructure including a vibrator, a spring having one end connected to the vibrator, and a support having the other end connected to the spring,
The spring is
It consists of the spring of Claim 1. The micro structure characterized by the above-mentioned. A spring body forming step for forming a spring body made of an elastic material;
A conductive layer forming step of forming a conductive layer on the surface of the spring body,
The spring body forming step includes:
A non-conductive resin applied on the film and a conductive resin applied on the non-conductive resin are thermocompression bonded to a mold in a vacuum, and the non-conductive resin is formed in the groove formed in the mold. Forming the spring body by embedding a conductive resin and a conductive resin,
The conductive layer forming step includes
After the spring body forming step, the method includes the step of removing the groove formed in the mold to expose the spring body, and forming a conductive layer on the exposed surface of the spring body,
The elastic material is
Made of parelin (registered trademark) resin,
The conductive material is
A method for producing a spring, comprising a water-dispersed polythiophene derivative, polyaniline, polypyrrole, polythiophene, or polyacetylene having a Young's modulus lower than that of the elastic material.

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