JP6162851B2 - Semiconductor light emitting device - Google Patents

Description

The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device that can control current, optimize current density, and increase brightness.

  In order to increase the brightness of a light emitting diode (LED), a metal reflection layer is provided as a light reflection layer between a substrate and an active layer composed of a multi-quantum well (MQW) layer. The structure to be formed has been proposed. As a method for forming such a metal reflective layer, for example, a wafer bonding (sticking) technique for a substrate of a light emitting diode layer has been disclosed (see, for example, Patent Document 1 and Patent Document 2).

  On the other hand, LEDs that improve the external quantum efficiency by relatively reducing ineffective light emission directly under the electrodes by processing the surface electrode pattern shape have already been disclosed (see, for example, Patent Documents 3 and 4). ).

  In general, the luminous efficiency of an LED does not increase indefinitely even if the current density is increased. This occurs because of the cause of reduced luminescence recombination as the temperature increases. Therefore, it is necessary to make the luminous efficiency an optimum current density with respect to the chip size.

  However, it is difficult to increase the chip size when applying a high current because of the size of the product. Further, by connecting small chips in parallel, it is possible to disperse the current and achieve an optimum current density, but the package becomes large and the assembly and mounting process such as die bonding and wire bonding becomes complicated. Therefore, it has been impossible to perform optimal current density control with the conventional LED structure.

JP-A-6-302857 US Pat. No. 5,376,580 JP 05-145119 A Japanese Patent Laid-Open No. 06-005921

  Therefore, it becomes a problem to manufacture an LED structure that obtains an optimum current density by controlling the conduction current by a method in which the chip size is kept constant and small chips are not arranged.

  An object of the present invention is to provide a semiconductor light emitting device that can control a current, can optimize a current density, and can achieve high luminance.

  An object of the present invention is to provide a semiconductor light emitting device that can control current by using a wafer bonding technique, can optimize current density, and can achieve high luminance.

According to one aspect of the present invention for achieving the above object, a semiconductor substrate and said first metal layer disposed on the semiconductor surface of the first substrate, a second disposed on the second surface of the semiconductor substrate A semiconductor substrate structure including a metal layer; a third metal layer disposed on the semiconductor substrate structure; an insulating film disposed on the third metal layer; and a plurality of current control electrodes penetrating the insulating film a current control layer made of a, and an epitaxial growth layer disposed on the current control layer, the consist and the epitaxial growth layer being arranged on Ru surface electrode and the light emitting diode structure comprising a first metal layer and the second 3 through the metal layer, wherein the semiconductor substrate structure, the light emitting diode and a is bonded structure, the epitaxial growth layer has a rectangular plane pattern, the surface electrode is a plan of the rectangular Comprising a wire bonding electrode disposed on a part of the turn, and a plurality of peripheral electrodes electrically connected to the wire bonding electrode, the plurality of current control electrode, when viewed from the laminate direction of the epitaxial growth layer Distributed only in a region that does not overlap with either the wire bonding electrode or the peripheral electrode, and the peripheral electrode forms a plurality of regions surrounding some of the plurality of current control electrodes when viewed from the stacking direction of the epitaxial growth layer The plurality of current control electrodes is provided with a semiconductor light emitting element in which the distance between adjacent current control electrodes is less than the distance straddling the peripheral electrode and the wire bonding electrode. .

  According to the first embodiment of the present invention, the transparent insulating film is inserted between the substrate and the semiconductor epitaxial growth layer, and the transparent insulating film is patterned to limit the place where the current flows. Has characteristics.

  According to the semiconductor light emitting device of the present invention, it is possible to provide a semiconductor light emitting device capable of controlling the current, optimizing the current density, and increasing the luminance.

  According to the semiconductor light emitting device of the present invention, it is possible to provide a semiconductor light emitting device capable of controlling current by using wafer bonding technology, optimizing the current density, and increasing the luminance.

1 is a basic schematic cross-sectional structure diagram of a semiconductor light-emitting element according to a first embodiment of the present invention. The plane pattern block diagram of the surface electrode of the semiconductor light-emitting device which concerns on the 1st and 2nd embodiment of this invention. The plane pattern block diagram of the transparent insulating film of the semiconductor light-emitting device which concerns on the 1st and 2nd embodiment of this invention. BRIEF DESCRIPTION OF THE DRAWINGS It is basic explanatory drawing of the semiconductor light-emitting device based on the 1st Embodiment of this invention, Comprising: (a) The plane pattern structural example of the transparent insulating film of 4 division | segmentation LED, (b) Surface electrode of 4 division | segmentation LED Example of plane pattern configuration, (c) A diagram for explaining the upper and lower arrangement relationship between the surface electrode of the 4-split LED and the plane pattern of the transparent insulating film, (d) A schematic circuit configuration diagram of the 4-split LED, (e) Epitaxial growth layer 14 and a schematic bird's-eye view of a current control layer comprising a transparent insulating film 12 and a current control electrode 18 disposed on the epitaxial growth layer 14, (f) a semiconductor substrate 10 having metal layers formed on the upper and lower surfaces, and FIG. The typical bird's-eye view of the structure which laminated | stacked the structure by the bonding technique, (g) The typical bird's-eye view which formed the planar pattern structure of the surface electrode 16. FIG. In the semiconductor light-emitting device concerning the 1st Embodiment of this invention, (a) Large LED, (b) Typical block diagram of 4 division | segmentation LED. FIG. 6 is a characteristic diagram showing a relationship between a light flux Φ _W (lm) having a pitch size as a parameter and a forward current I _F (mA) in the semiconductor light emitting device according to the first embodiment of the present invention. The another plane pattern block diagram of the surface electrode of the semiconductor light-emitting device which concerns on the 1st and 2nd embodiment of this invention. FIG. 10 is still another plane pattern configuration diagram of the surface electrode of the semiconductor light emitting element according to the first and second embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS It is explanatory drawing of the manufacturing method of the semiconductor light-emitting device based on the 1st Embodiment of this invention, Comprising: (a) The current control layer (12,18) which consists of the transparent insulating film 12 and the current control electrode 18 on the epitaxial growth layer 14 ) And further forming the third metal layer 20, (b) a schematic bird's-eye view of the structure in which the third metal layer 20 is formed on the current control layers (12, 18), and (c) on the upper and lower surfaces. A schematic bird's-eye view of the semiconductor substrate 10 on which the first metal layer 21 and the second metal layer 22 are formed, (d) a schematic bird's-eye view of a structure in which the third metal layer 20 and the first metal layer 21 are bonded together by thermocompression bonding; e) A process diagram for forming the pattern of the surface electrode 16 on the epitaxial growth layer 14, and (f) a schematic bird's-eye view of the completed structure. It is explanatory drawing of the manufacturing method of the semiconductor light-emitting device based on the 2nd Embodiment of this invention, Comprising: (a) The current control layer (12,18) which consists of the transparent insulating film 12 and the current control electrode 18 on the epitaxial growth layer 14 ) And further forming the third metal layer 20, (b) a schematic bird's-eye view of the structure in which the third metal layer 20 is formed on the current control layers (12, 18), and (c) the epitaxial growth layer 14. The process figure which forms the pattern of the surface electrode 16 on it, (d) The typical bird's-eye view of the completed structure.

  Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and different from the actual ones. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  Further, the embodiment described below exemplifies an apparatus and a method for embodying the technical idea of the present invention. The technical idea of the present invention is the arrangement of each component as described below. It is not something specific. The technical idea of the present invention can be variously modified within the scope of the claims.

[First embodiment]
(Basic element structure)
FIG. 1 shows a basic schematic sectional view of a semiconductor light emitting device according to a first embodiment of the present invention.

  The basic schematic cross-sectional structure of the semiconductor light emitting device according to the first embodiment of the present invention includes a semiconductor substrate 10 and a metal layer disposed on the first surface of the semiconductor substrate 10 as shown in FIG. 22, a transparent insulating film 12 disposed on the second surface of the semiconductor substrate 10, an epitaxial growth layer 14 disposed on the transparent insulating film 12, and a surface electrode 16 disposed on the epitaxial growth layer 14. As will be described later, a plurality of current control electrodes 18 (FIG. 4) are formed on the transparent insulating film 12 to electrically connect the semiconductor substrate 10 and the epitaxial growth layer 14.

  As will be described later, the semiconductor substrate 10 and the epitaxial growth layer 14 are formed by using, for example, a wafer bonding technique (sticking technique).

  FIG. 2 shows a planar pattern configuration example of the surface electrode 16.

  As shown in FIG. 2, the epitaxial growth layer 14 has, for example, a rectangular plane pattern, and the surface electrode 16 is connected to the center electrode 24 disposed at the center of the rectangular plane pattern and the center electrode 24. , A coupling electrode 26 extending from the center electrode 24 in the diagonal direction of the rectangle, and peripheral electrodes 25 connected to the coupling electrode 26 and disposed at the four corners of the rectangle.

  The peripheral electrode 25 has an opening 28. In the example of FIG. 2, the opening 28 is rectangular.

  FIG. 3 shows a schematic plane pattern configuration example of the transparent insulating film 12.

  As shown in FIG. 3, a current control electrode 18 is formed in the patterned hole portion of the transparent insulating film 12. The distribution of the current control electrode 18 is arranged such that the density is high in the peripheral part of the rectangular pattern of the epitaxial growth layer 14 and the density is low in the central part. That is, in the pattern example of the transparent insulating film 12 shown in FIG. 3, the pattern of the current control electrode 18 is arranged so that no current flows in the central portion.

  After the transparent insulating film 12 is formed, when patterning for the current control electrode 18 for taking an ohmic contact is performed, a pattern arrangement in which the conduction current of the LED can be controlled is set. Further, when the surface electrode 16 is formed, it is formed in accordance with the pattern of the transparent insulating film 12.

  In combination with the planar pattern example of the surface electrode 16 shown in FIG. 2, it becomes easy to conduct the LED current from the central portion on the rectangular planar pattern of the epitaxial growth layer 14 toward the peripheral electrodes 25 arranged at the four corners.

  FIG. 4 is a basic explanatory view of the semiconductor light emitting device according to the first embodiment of the present invention, and FIG. 4A is a plan pattern configuration example of the transparent insulating film of the 4-split LED, FIG. FIG. 4B is a diagram illustrating a planar pattern configuration example of the surface electrode of the 4-split LED, and FIG. 4C is a diagram illustrating the upper and lower arrangement relationship between the surface electrode of the 4-split LED and the planar pattern of the transparent insulating film. 4D is a schematic circuit configuration diagram of a 4-split LED, and FIG. 4E is a schematic diagram of the current control layer including the epitaxial growth layer 14 and the transparent insulating film 12 disposed on the epitaxial growth layer 14 and the current control electrode 18. 4 (f) is a schematic bird's-eye view of a structure in which the semiconductor substrate 10 having metal layers formed on the upper and lower surfaces and the structure of FIG. 4 (e) are laminated by a bonding technique, FIG. 4 (g) Schematic in which a planar pattern structure of the surface electrode 16 is formed Show the's eye view.

  In the semiconductor light emitting device according to the first embodiment of the present invention, as shown in FIG. 4A, a pattern of a current control layer including a transparent insulating film 12 and a current control electrode 18 is used. The pattern of the surface electrode 16 shown in FIG. 4B is used, and as shown in FIG. 4C, one LED is virtually divided inside the element, and the four LEDs are arranged side by side and illuminated. It can be arranged similarly.

  As an example of chip division, for example, as shown in FIG. 4A, in the current control layers (12, 18), a pattern in which the resistance of the central portion is increased and the current path is divided into four is used.

  As shown in FIG. 4B, the pattern of the surface electrode 16 uses a pattern in which current flows through four paths.

  As a result, as shown in FIG. 4C and FIG. 4D, an LED similar to a state in which four LEDs virtually divided into four are connected in parallel is configured.

(Formation method)
(A) First, as shown in FIG. 4 (e), an epitaxial growth layer 14 is prepared, and a current control layer (12, 18) composed of the transparent insulating film 12 and the current control electrode 18 is formed on the epitaxial growth layer 14. . The transparent insulating film 12 is made of, for example, a silicon oxide film. The current control electrode 18 is made of, for example, a gold layer.
(B) Next, as shown in FIG. 4 (f), a semiconductor substrate 10 having metal layers 20 and 22 formed on the upper and lower surfaces is prepared, and bonded and laminated by the structure and bonding technique of FIG. 4 (e). Turn into. The metal layers 20 and 22 are made of, for example, a gold layer. That is, a current control layer (12, 18) composed of the transparent insulating film 12 and the current control electrode 18 is embedded between the semiconductor substrate 10 and the epitaxial growth layer 14 by using a bonding technique. The metal layer 20 used for the bonding functions as a gold (Au) mirror layer of the semiconductor light emitting device according to the first embodiment.
(C) Next, as shown in FIG. 4G, a planar pattern structure of the surface electrode 16 is formed on the epitaxial growth layer 14. The planar pattern of the surface electrode 16 is formed together with the planar pattern of the current control layer (12, 18) composed of the transparent insulating film 12 and the current control electrode 18.

  As a result, the current flow can be controlled by using the planar pattern of the current control layers (12, 18), and a semiconductor light-emitting element in which the four openings 28 emit light can be obtained.

(Optimization of chip size and current density)
FIG. 5 is a schematic configuration diagram of a large LED (FIG. 5A) and a four-part LED (FIG. 5B) in the semiconductor light emitting device according to the first embodiment of the present invention. Further, FIG. 6 shows the relationship between the luminous flux Φ _W (lm) having the pitch size as a parameter and the forward current I _F (mA) in the semiconductor light emitting device according to the first embodiment of the present invention.

In general, the luminous efficiency η _i of an LED is expressed by the following equation.

η _i = Bτ _n (p ₀ + n ₀ + τ _n J / qd) (1)

Here, B is the luminescence recombination constant, τ _n is the electron lifetime, p ₀ is the hole impurity density, n ₀ is the electron impurity density, J is the current density, q is the elementary charge amount, and d is the active layer. Indicates the thickness.

  In general, the luminous efficiency of an LED does not increase indefinitely even if the current density is increased.

For example, as shown in FIG. 6, even if the forward current density I _F (mA) is increased, the luminous flux Φ _W (lm) does not increase infinitely. Assuming that the pitch size is a parameter, the value of the luminous flux Φ _W (lm) has a peak value as shown in FIG. 6, and an appropriate value of the forward current I _F (mA) exists.

The reason for having such a peak value is that, as shown in FIG. 6, even if the forward current I _F (mA) is increased, the temperature rises, and as the temperature rises, luminescence recombination decreases.

  Therefore, it is necessary to make the luminous efficiency an optimum current density with respect to the chip size.

  By adopting the configuration of the divided LED (FIG. 5B) and optimizing the current density of the minute LED so that the luminous efficiency of each individual minute LED is optimized, the same current as a whole is obtained. Even if it is made conductive, higher luminance can be achieved as compared with a large LED (FIG. 5A). Obviously, the divided LED is not limited to four divisions.

  Arranging a plurality of LEDs requires a plurality of pads for wire bonding, complicating wiring, and causing difficulty in mounting, whereas the semiconductor according to the first embodiment of the present invention. In the light emitting element, the difficulty in mounting can be eliminated by using the current control layers (12, 18).

(Element structure)
FIG. 7 shows another plane pattern configuration diagram of the surface electrode of the semiconductor light emitting device according to the first embodiment of the present invention. FIG. 8 shows still another plane pattern configuration diagram of the surface electrode of the semiconductor light emitting device according to the first embodiment of the present invention.

  FIG. 9F shows a schematic bird's-eye view of the semiconductor light emitting device according to the first embodiment of the present invention.

  As shown in FIG. 9 (f), the semiconductor light emitting device according to the first embodiment of the present invention includes a semiconductor substrate 10, a metal layer 21 disposed on the first surface of the semiconductor substrate 10, and the semiconductor substrate 10. A semiconductor substrate structure including a metal layer 22 disposed on the second surface of the semiconductor substrate, a metal layer 20 disposed on the semiconductor substrate structure, disposed on the metal layer 20, and from the transparent insulating film 12 and the current control electrode 18. And a light-emitting diode structure including a current control layer (12, 18), an epitaxial growth layer 14 disposed on the current control layer (12, 18), and a surface electrode 16 disposed on the epitaxial growth layer 14. The

  The semiconductor light-emitting device according to the first embodiment of the present invention is characterized in that a semiconductor substrate structure and a light-emitting diode structure are attached using the metal layer 21 and the metal layer 20.

  As shown in FIGS. 2, 7 and 8, the epitaxial growth layer 14 has a rectangular plane pattern, and the surface electrode 16 includes a center electrode 24 arranged at the center of the rectangular plane pattern, A coupling electrode 26 connected to the central electrode 24 and extending from the central electrode 24 in a rectangular diagonal direction, and a peripheral electrode 25 connected to the coupling electrode 26 and disposed at the four corners of the rectangle.

  Further, as shown in FIGS. 2 and 7, the peripheral electrode may include an opening 28.

  Further, as shown in FIG. 2, the opening 28 may be rectangular.

  As shown in FIG. 7, the opening 28 may be a perfect circle, a substantially circle, an ellipse, an ellipse, or the like.

  Further, as shown in FIG. 8, the peripheral electrode 32 may include a portion orthogonal to the coupling electrode 26. A plurality of peripheral electrodes 32 may be arranged. When a plurality of peripheral electrodes are arranged, the lengths of the peripheral electrodes 32 may be different from each other.

  Further, although not shown here, the peripheral electrode 32 may be arranged in a fractal graphic structure.

  In the semiconductor light emitting device according to the first embodiment, the semiconductor substrate structure and the light emitting diode structure can be attached by attaching the first metal layer 21 and the third metal layer 20 by thermocompression bonding.

  The temperature condition for pasting is, for example, about 250 ° C. to 700 ° C., desirably 300 ° C. to 400 ° C., and the pressure for thermocompression bonding is, for example, about 10 MPa to 20 MPa.

  In the semiconductor light emitting device according to the first embodiment, the semiconductor substrate may be made of GaAs.

  In the semiconductor light emitting device according to the first embodiment, the metal layers 20, 21, 22, the current control electrode 18, and the surface electrode 16 may all be formed of a gold layer.

  In the semiconductor light emitting device according to the first embodiment, the transparent insulating film 12 may be formed of any one of a silicon oxide film, a silicon nitride film, a SiON film, a SiOxNy film, or a multilayer film thereof. .

(Production method)
FIG. 9 is an explanatory diagram of the method of manufacturing the semiconductor light emitting device according to the first embodiment of the invention.

  As shown in FIG. 9, the method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention includes a step of preparing a semiconductor substrate 10, and a first metal layer 21 on the first surface of the semiconductor substrate 10. A step of forming, a step of forming the second metal layer 22 on the second surface of the semiconductor substrate 10, a step of preparing the epitaxial growth layer 14, a step of forming the transparent insulating film 12 on the epitaxial growth layer 14, and a transparent A step of patterning the insulating film 12 to form a plurality of current control electrodes 18 connected to the epitaxial growth layer 14, and a current control layer (12, 18) comprising the transparent insulating film 12 and the plurality of current control electrodes 18 It has the process of forming the 3rd metal layer 20, and the process of affixing the 1st metal layer 21 and the 3rd metal layer 20 by thermocompression bonding.

The manufacturing process will be described below.
(A) First, as shown in FIG. 9A, a current control layer (12, 18) composed of the transparent insulating film 12 and the current control electrode 18 is formed on the epitaxial growth layer 14.
(B) Next, as shown in FIG. 9B, a metal layer 20 is formed on the current control layers (12, 18). The metal layer 20 can be formed by gold vapor deposition, for example.
(C) Next, as shown in FIG. 9C, the first metal layer 21 and the second metal layer 22 are formed on the upper and lower surfaces of the semiconductor substrate 10, respectively. The first metal layer 21 and the second metal layer 22 can also be formed by, for example, gold vapor deposition.
(D) Next, as shown in FIG. 9D, the third metal layer 20 and the first metal layer 21 are attached by thermocompression bonding, thereby attaching the semiconductor substrate structure and the light emitting diode structure. The temperature condition for pasting is, for example, about 250 ° C. to 700 ° C., desirably 300 ° C. to 400 ° C., and the pressure for thermocompression bonding is, for example, about 10 MPa to 20 MPa.
(E) Next, as shown in FIG. 9 (e), a pattern of the surface electrode 16 is formed on the epitaxial growth layer 14. The surface electrode 16 can also be formed by, for example, gold vapor deposition.
(F) Finally, as shown in FIG. 9F, a semiconductor light emitting device having a completed structure is obtained. As a result, the current flow can be controlled by using the planar pattern of the current control layers (12, 18), and a semiconductor light-emitting element in which the four openings 28 emit light can be obtained.

  In the method for manufacturing a semiconductor light emitting device according to the first embodiment of the present invention, a current control layer (12) including a transparent insulating film 12 and a plurality of current control electrodes 18 is provided between the epitaxial growth layer 14 and the semiconductor substrate 10. , 18). Such a current control layer (12, 18) cannot be formed by epitaxial growth on the epitaxial growth layer. For this reason, in the manufacturing method of the semiconductor light emitting element according to the first embodiment of the present invention, a pasting technique is used.

  Such a current control layer (12, 18) is characterized by interposing a high resistance material such as a silicon oxide film between the epitaxial growth layer 14 and the semiconductor substrate 10, particularly the central electrode 24 of the surface electrode 16. It is in the point which can make it difficult to flow an electric current directly under.

  According to the first embodiment of the present invention, it is possible to provide a semiconductor light emitting device capable of controlling the current density, optimizing the current density, and increasing the luminance, and a method for manufacturing the same.

  According to the first embodiment of the present invention, there is provided a semiconductor light emitting device capable of controlling current density, optimizing current density, and increasing brightness by using wafer bonding technology, and a method for manufacturing the same. Can be provided.

[Second Embodiment]
(Element structure)
FIG. 10D is a schematic bird's-eye view of the semiconductor light emitting element according to the second embodiment of the present invention.

  As shown in FIG. 10D, the semiconductor light emitting device according to the second embodiment of the present invention includes an epitaxial growth layer 14, a surface electrode 16 disposed on the first surface of the epitaxial growth layer 14, and the epitaxial growth layer 14. A transparent insulating film 12 disposed on the second surface, a current control electrode 18 disposed on the second surface by patterning the transparent insulating film 12, and a current control layer comprising the transparent insulating film 12 and the current control electrode 18 ( 12, 18) and a metal layer 20 disposed thereon.

  As shown in FIGS. 2, 7 and 8, the epitaxial growth layer 14 has a rectangular plane pattern, and the surface electrode 16 includes a center electrode 24 arranged at the center of the rectangular plane pattern, The coupling electrode 26 is connected to the central electrode 24 and extends from the central electrode 24 in a rectangular diagonal direction, and the peripheral electrodes 22 and 32 are connected to the coupling electrode 26 and arranged at the four corners of the rectangular planar pattern.

  Further, as shown in FIGS. 2 and 7, the peripheral electrode 22 has an opening 28.

  The opening 28 may be rectangular as shown in FIG.

  In addition, as shown in FIG. 7, the opening 28 may be a perfect circle, a substantially circular shape, or an ellipse, an ellipse, or the like.

  Further, as shown in FIG. 8, the peripheral electrode 32 may include a portion orthogonal to the coupling electrode 26. A plurality of peripheral electrodes 32 may be arranged. When a plurality of peripheral electrodes are arranged, the lengths of the peripheral electrodes 32 may be different from each other.

  Further, although not shown here, the peripheral electrode 32 may be arranged in a fractal graphic structure.

  In the semiconductor light emitting device according to the second embodiment of the present invention, the semiconductor epitaxial growth layer may be formed of a GaAs layer.

  Further, the surface electrode 16, the current control electrode 18, and the metal layer 20 may all be formed of a gold layer.

  In the semiconductor light emitting device according to the second embodiment of the present invention, the transparent insulating film 12 is formed of any one of a silicon oxide film, a silicon nitride film, a SiON film, a SiOxNy film, or a multilayer film thereof. .

(Production method)
FIG. 10 is an explanatory view of the method for manufacturing the semiconductor light emitting device according to the second embodiment of the present invention.

As shown in FIG. 10, the method for manufacturing a semiconductor light emitting device according to the second embodiment of the present invention is as follows.
A step of preparing the epitaxial growth layer 14, a step of forming the transparent insulating film 12 on the first surface of the epitaxial growth layer, and a patterning of the transparent insulating film 12 to form a current control electrode 18 on the first surface of the epitaxial growth layer 14. And a step of forming the surface electrode 16 on the second surface of the epitaxial growth layer 14.

The manufacturing process will be described below.
(A) First, as shown in FIG. 10A, a current control layer (12, 18) composed of the transparent insulating film 12 and the current control electrode 18 is formed on the epitaxial growth layer 14.
(B) Next, as shown in FIG. 10B, the metal layer 20 is formed on the current control layers (12, 18).
(C) Next, as shown in FIG. 10C, a pattern of the surface electrode 16 is formed on the epitaxial growth layer 14.
(D) Finally, as shown in FIG. 10D, a semiconductor light emitting device having a completed structure is obtained.

  According to the second embodiment of the present invention, it is possible to provide a semiconductor light emitting device capable of controlling the current density, optimizing the current density, and increasing the luminance, and a method for manufacturing the same.

[Other embodiments]
As described above, the present invention has been described according to the first to second embodiments. However, it should not be understood that the description and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  In the semiconductor light emitting device and the manufacturing method thereof according to the first to second embodiments of the present invention, description has been made mainly using a GaAs substrate as an example of the semiconductor substrate, but Si, Ge, SiGe, SiC, GaN substrate, or SiC The upper GaN epitaxial substrate and the like can be sufficiently used.

  As the semiconductor light emitting device according to the first to second embodiments of the present invention, description has been made mainly using the LED as an example. However, a laser diode (LD) may be configured. A laser (VCSEL: Vertical Cavity Surface Emitting Laser Diode), a distributed feedback (DFB) LD, a distributed Bragg reflection (DBR) LD, or the like may be configured.

  Further, in the semiconductor light emitting device and the manufacturing method thereof according to the first to second embodiments of the present invention, the example using the GaAs-based epitaxial growth layer has been described. For example, an AlInGaP-based material is applied. You can also.

  As described above, the present invention naturally includes various embodiments that are not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

  The semiconductor light emitting device and the method for manufacturing the same according to the embodiment of the present invention can be used for general semiconductor light emitting devices such as LED devices and LD devices having an opaque substrate such as a GaAs substrate or Si substrate.

DESCRIPTION OF SYMBOLS 10 ... Semiconductor substrate 12 ... Transparent insulating film 14 ... Epitaxial growth layer 16 ... Surface electrode 18 ... Current control electrode 20, 21, 22 ... Metal layer (Au layer)
24 ... center electrodes 25, 32 ... peripheral electrode 26 ... coupling electrode 28 ... opening

Claims (16)

A semiconductor substrate structure comprising: a semiconductor substrate; a first metal layer disposed on a first surface of the semiconductor substrate ; and a second metal layer disposed on a second surface of the semiconductor substrate ;
Wherein arranged in the semiconductor substrate structure, and a third metal layer, said third insulating disposed on the metal layer film, and the current control layer comprising a plurality of current control electrode penetrating the insulating layer, the current is composed of a light emitting diode structure including an epitaxial growth layer disposed on a control layer, and a surface electrode to which the Ru disposed epitaxial growth layer,
The semiconductor substrate structure and the light emitting diode structure are joined via the first metal layer and the third metal layer,
The epitaxial growth layer has a rectangular planar pattern;
The surface electrode is
A wire bonding electrode disposed on a part of the rectangular planar pattern;
A plurality of peripheral electrodes electrically connected to the wire bonding electrode;
With
The plurality of current control electrodes are distributed only in a region that does not overlap with either the wire bonding electrode or the peripheral electrode when viewed from the stacking direction of the epitaxial growth layer ,
The peripheral electrode forms a plurality of regions surrounding some of the plurality of current control electrodes when viewed from the stacking direction of the epitaxial growth layer,
The distance between the current control electrodes of the plurality of current control electrodes is such that a distance that does not straddle the distance between the peripheral electrode and the wire bonding electrode is smaller than a distance straddling the peripheral electrode and the wire bonding electrode . The semiconductor light emitting element according to claim 1, wherein a coupling electrode that electrically connects the wire bonding electrode and the peripheral electrode is interposed between the wire bonding electrode and the peripheral electrode. The coupling electrode extends in a diagonal direction of the rectangle from the wire bonding electrode,
The semiconductor light emitting element according to claim 2, wherein the peripheral electrodes are arranged at four corners of the rectangle. 4. The semiconductor light emitting element according to claim 1 , wherein the peripheral electrode has an opening. 5.   The semiconductor light emitting device according to claim 4, wherein the opening is rectangular.   The semiconductor light emitting device according to claim 4, wherein the opening is substantially circular. 4. The semiconductor light emitting element according to claim 1 , wherein the peripheral electrode has a portion orthogonal to the coupling electrode. 5. The semiconductor light emitting device according to claim 1, wherein the semiconductor substrate is made of GaAs. The semiconductor light emitting device according to claim 1, wherein the epitaxial growth layer is formed of a GaAs layer. The semiconductor light-emitting element according to claim 1, wherein the epitaxial growth layer includes an AlInGaP-based material. The first metal layer, the second metal layer, the third metal layer, the surface electrode, and the current control electrode are all formed of a gold layer. The semiconductor light emitting device according to item. 12. The semiconductor according to claim 1, wherein the insulating film is formed of any one of a silicon oxide film, a silicon nitride film, a SiON film, a SiOxNy film, or a multilayer film thereof. Light emitting element. The current control electrodes penetrating the insulating film are substantially arranged in a plurality of rows on a concentric circumference and spaced apart from each other at equal intervals. 13. The semiconductor light emitting device according to any one of items 12. The semiconductor light-emitting element according to claim 1, wherein a mirror surface made of a metal is formed under the current control layer. The semiconductor light emitting device according to claim 1, wherein lengths of the plurality of peripheral electrodes are different from each other. The semiconductor light emitting device according to claim 1, wherein the semiconductor substrate is a substrate formed of Si, Ge, SiGe, SiC, or GaN, or a GaN epitaxial substrate on SiC. element.

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