JP6111306B2 - 光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法 - Google Patents
光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法 Download PDFInfo
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- JP6111306B2 JP6111306B2 JP2015198976A JP2015198976A JP6111306B2 JP 6111306 B2 JP6111306 B2 JP 6111306B2 JP 2015198976 A JP2015198976 A JP 2015198976A JP 2015198976 A JP2015198976 A JP 2015198976A JP 6111306 B2 JP6111306 B2 JP 6111306B2
- Authority
- JP
- Japan
- Prior art keywords
- photoacid
- independently
- generating
- repeating units
- repeating unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F228/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
- C08F228/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462062347P | 2014-10-10 | 2014-10-10 | |
| US62/062,347 | 2014-10-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016104849A JP2016104849A (ja) | 2016-06-09 |
| JP2016104849A5 JP2016104849A5 (https=) | 2017-02-16 |
| JP6111306B2 true JP6111306B2 (ja) | 2017-04-05 |
Family
ID=55655003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015198976A Active JP6111306B2 (ja) | 2014-10-10 | 2015-10-07 | 光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9606434B2 (https=) |
| JP (1) | JP6111306B2 (https=) |
| KR (1) | KR101786641B1 (https=) |
| CN (1) | CN105504118B (https=) |
| TW (1) | TWI589596B (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9557642B2 (en) | 2014-10-10 | 2017-01-31 | Rohm And Haas Electronic Materials Llc | Photoresist composition and associated method of forming an electronic device |
| US9527936B2 (en) | 2014-10-10 | 2016-12-27 | Rohm And Haas Electronic Materials Llc | Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method |
| US9551930B2 (en) | 2014-10-10 | 2017-01-24 | Rohm And Haas Electronic Materials Llc | Photoresist composition and associated method of forming an electronic device |
| JP6543222B2 (ja) * | 2016-06-03 | 2019-07-10 | 株式会社三共 | 遊技機 |
| JP6846127B2 (ja) * | 2016-06-28 | 2021-03-24 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| WO2018042810A1 (ja) * | 2016-08-31 | 2018-03-08 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| WO2018194123A1 (ja) * | 2017-04-20 | 2018-10-25 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
| JP7407576B2 (ja) * | 2019-12-03 | 2024-01-04 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
| CN111138410A (zh) * | 2019-12-28 | 2020-05-12 | 上海博栋化学科技有限公司 | 含金刚烷结构的光刻胶产酸树脂单体及其合成方法 |
| JP7719654B2 (ja) * | 2020-08-05 | 2025-08-06 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| JP7719653B2 (ja) * | 2020-08-05 | 2025-08-06 | 住友化学株式会社 | 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法 |
| US12393118B2 (en) | 2021-05-28 | 2025-08-19 | Dupont Electronic Materials International, Llc | Composition for photoresist underlayer |
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| DE3902115A1 (de) | 1989-01-25 | 1990-08-02 | Basf Ag | Strahlungsempfindliche polymere |
| JP3613491B2 (ja) | 1996-06-04 | 2005-01-26 | 富士写真フイルム株式会社 | 感光性組成物 |
| JP4866605B2 (ja) * | 2005-12-28 | 2012-02-01 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物 |
| US7569326B2 (en) | 2006-10-27 | 2009-08-04 | Shin-Etsu Chemical Co., Ltd. | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process |
| EP2101217B1 (en) | 2008-03-14 | 2011-05-11 | Shin-Etsu Chemical Co., Ltd. | Sulfonium salt-containing polymer, resist compositon, and patterning process |
| JP4998746B2 (ja) | 2008-04-24 | 2012-08-15 | 信越化学工業株式会社 | スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法 |
| JP5201363B2 (ja) | 2008-08-28 | 2013-06-05 | 信越化学工業株式会社 | 重合性アニオンを有するスルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法 |
| TWI400226B (zh) * | 2008-10-17 | 2013-07-01 | Shinetsu Chemical Co | 具有聚合性陰離子之鹽及高分子化合物、光阻劑材料及圖案形成方法 |
| JP5401910B2 (ja) | 2008-10-17 | 2014-01-29 | セントラル硝子株式会社 | 重合性アニオンを有する含フッ素スルホン塩類とその製造方法、含フッ素樹脂、レジスト組成物及びそれを用いたパターン形成方法 |
| JP5417150B2 (ja) * | 2008-12-18 | 2014-02-12 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、それを用いたパターン形成方法、及び樹脂 |
| JP5851688B2 (ja) * | 2009-12-31 | 2016-02-03 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 感光性組成物 |
| JP5782283B2 (ja) | 2010-03-31 | 2015-09-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 新規のポリマーおよびフォトレジスト組成物 |
| JP5578994B2 (ja) * | 2010-08-27 | 2014-08-27 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いたレジスト膜及びパターン形成方法 |
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| JP5521996B2 (ja) | 2010-11-19 | 2014-06-18 | 信越化学工業株式会社 | スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法、並びにスルホニウム塩単量体及びその製造方法 |
| EP2472322A2 (en) * | 2010-12-31 | 2012-07-04 | Rohm and Haas Electronic Materials LLC | Photoacid generating monomer and precursor thereof |
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| KR20130012053A (ko) | 2011-07-21 | 2013-01-31 | 도오꾜오까고오교 가부시끼가이샤 | 중합체, 레지스트 조성물 및 레지스트 패턴 형성 방법 |
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| JP6571912B2 (ja) * | 2012-12-31 | 2019-09-04 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 樹状化合物、フォトレジスト組成物、および電子デバイスを作製する方法 |
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| US9581901B2 (en) | 2013-12-19 | 2017-02-28 | Rohm And Haas Electronic Materials Llc | Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device |
| US20150346599A1 (en) * | 2014-05-29 | 2015-12-03 | Rohm And Haas Electronic Materials Llc | Photo-destroyable quencher and associated photoresist composition, and device-forming method |
| US10345700B2 (en) * | 2014-09-08 | 2019-07-09 | International Business Machines Corporation | Negative-tone resist compositions and multifunctional polymers therein |
| US9551930B2 (en) * | 2014-10-10 | 2017-01-24 | Rohm And Haas Electronic Materials Llc | Photoresist composition and associated method of forming an electronic device |
| US9557642B2 (en) * | 2014-10-10 | 2017-01-31 | Rohm And Haas Electronic Materials Llc | Photoresist composition and associated method of forming an electronic device |
| US9527936B2 (en) * | 2014-10-10 | 2016-12-27 | Rohm And Haas Electronic Materials Llc | Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method |
-
2015
- 2015-08-24 US US14/833,273 patent/US9606434B2/en active Active
- 2015-10-06 TW TW104132896A patent/TWI589596B/zh active
- 2015-10-07 KR KR1020150140861A patent/KR101786641B1/ko active Active
- 2015-10-07 JP JP2015198976A patent/JP6111306B2/ja active Active
- 2015-10-09 CN CN201510650560.6A patent/CN105504118B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI589596B (zh) | 2017-07-01 |
| CN105504118A (zh) | 2016-04-20 |
| TW201613985A (en) | 2016-04-16 |
| US20160102158A1 (en) | 2016-04-14 |
| JP2016104849A (ja) | 2016-06-09 |
| US9606434B2 (en) | 2017-03-28 |
| KR20160042776A (ko) | 2016-04-20 |
| CN105504118B (zh) | 2019-04-30 |
| KR101786641B1 (ko) | 2017-10-19 |
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