JP6111306B2 - 光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法 - Google Patents

光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法 Download PDF

Info

Publication number
JP6111306B2
JP6111306B2 JP2015198976A JP2015198976A JP6111306B2 JP 6111306 B2 JP6111306 B2 JP 6111306B2 JP 2015198976 A JP2015198976 A JP 2015198976A JP 2015198976 A JP2015198976 A JP 2015198976A JP 6111306 B2 JP6111306 B2 JP 6111306B2
Authority
JP
Japan
Prior art keywords
photoacid
independently
generating
repeating units
repeating unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015198976A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016104849A5 (https=
JP2016104849A (ja
Inventor
ポール・ジェイ・ラボーム
ヴィップル・ジェイン
ジェームズ・ダブリュ・サッカリー
ジェームズ・エフ・キャメロン
スザンヌ・エム・コーリー
エイミー・エム・クウォック
デイヴィット・エイ・ヴァレリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2016104849A publication Critical patent/JP2016104849A/ja
Publication of JP2016104849A5 publication Critical patent/JP2016104849A5/ja
Application granted granted Critical
Publication of JP6111306B2 publication Critical patent/JP6111306B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F228/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur
    • C08F228/02Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a bond to sulfur or by a heterocyclic ring containing sulfur by a bond to sulfur
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2015198976A 2014-10-10 2015-10-07 光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法 Active JP6111306B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462062347P 2014-10-10 2014-10-10
US62/062,347 2014-10-10

Publications (3)

Publication Number Publication Date
JP2016104849A JP2016104849A (ja) 2016-06-09
JP2016104849A5 JP2016104849A5 (https=) 2017-02-16
JP6111306B2 true JP6111306B2 (ja) 2017-04-05

Family

ID=55655003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015198976A Active JP6111306B2 (ja) 2014-10-10 2015-10-07 光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法

Country Status (5)

Country Link
US (1) US9606434B2 (https=)
JP (1) JP6111306B2 (https=)
KR (1) KR101786641B1 (https=)
CN (1) CN105504118B (https=)
TW (1) TWI589596B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9557642B2 (en) 2014-10-10 2017-01-31 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
US9527936B2 (en) 2014-10-10 2016-12-27 Rohm And Haas Electronic Materials Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method
US9551930B2 (en) 2014-10-10 2017-01-24 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
JP6543222B2 (ja) * 2016-06-03 2019-07-10 株式会社三共 遊技機
JP6846127B2 (ja) * 2016-06-28 2021-03-24 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
WO2018042810A1 (ja) * 2016-08-31 2018-03-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2018194123A1 (ja) * 2017-04-20 2018-10-25 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP7407576B2 (ja) * 2019-12-03 2024-01-04 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
CN111138410A (zh) * 2019-12-28 2020-05-12 上海博栋化学科技有限公司 含金刚烷结构的光刻胶产酸树脂单体及其合成方法
JP7719654B2 (ja) * 2020-08-05 2025-08-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7719653B2 (ja) * 2020-08-05 2025-08-06 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
US12393118B2 (en) 2021-05-28 2025-08-19 Dupont Electronic Materials International, Llc Composition for photoresist underlayer

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3902115A1 (de) 1989-01-25 1990-08-02 Basf Ag Strahlungsempfindliche polymere
JP3613491B2 (ja) 1996-06-04 2005-01-26 富士写真フイルム株式会社 感光性組成物
JP4866605B2 (ja) * 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
US7569326B2 (en) 2006-10-27 2009-08-04 Shin-Etsu Chemical Co., Ltd. Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process
EP2101217B1 (en) 2008-03-14 2011-05-11 Shin-Etsu Chemical Co., Ltd. Sulfonium salt-containing polymer, resist compositon, and patterning process
JP4998746B2 (ja) 2008-04-24 2012-08-15 信越化学工業株式会社 スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法
JP5201363B2 (ja) 2008-08-28 2013-06-05 信越化学工業株式会社 重合性アニオンを有するスルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法
TWI400226B (zh) * 2008-10-17 2013-07-01 Shinetsu Chemical Co 具有聚合性陰離子之鹽及高分子化合物、光阻劑材料及圖案形成方法
JP5401910B2 (ja) 2008-10-17 2014-01-29 セントラル硝子株式会社 重合性アニオンを有する含フッ素スルホン塩類とその製造方法、含フッ素樹脂、レジスト組成物及びそれを用いたパターン形成方法
JP5417150B2 (ja) * 2008-12-18 2014-02-12 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、それを用いたパターン形成方法、及び樹脂
JP5851688B2 (ja) * 2009-12-31 2016-02-03 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 感光性組成物
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 新規のポリマーおよびフォトレジスト組成物
JP5578994B2 (ja) * 2010-08-27 2014-08-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いたレジスト膜及びパターン形成方法
WO2012050015A1 (ja) * 2010-10-13 2012-04-19 セントラル硝子株式会社 重合性含フッ素スルホン酸塩類、含フッ素スルホン酸塩樹脂、レジスト組成物及びそれを用いたパターン形成方法
JP5521996B2 (ja) 2010-11-19 2014-06-18 信越化学工業株式会社 スルホニウム塩を含む高分子化合物、レジスト材料及びパターン形成方法、並びにスルホニウム塩単量体及びその製造方法
EP2472322A2 (en) * 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Photoacid generating monomer and precursor thereof
JP5802394B2 (ja) * 2011-01-17 2015-10-28 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び高分子化合物
JP5677135B2 (ja) * 2011-02-23 2015-02-25 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法および高分子化合物
JP5715890B2 (ja) * 2011-06-10 2015-05-13 東京応化工業株式会社 高分子化合物の製造方法
US20120322006A1 (en) 2011-06-20 2012-12-20 Central Glass Company, Limited Fluorine-Containing Sulfonate Resin, Resist Composition and Pattern Formation Method
KR20130012053A (ko) 2011-07-21 2013-01-31 도오꾜오까고오교 가부시끼가이샤 중합체, 레지스트 조성물 및 레지스트 패턴 형성 방법
JP6019849B2 (ja) * 2011-09-08 2016-11-02 セントラル硝子株式会社 含フッ素スルホン酸塩類、含フッ素スルホン酸塩樹脂、レジスト組成物及びそれを用いたパターン形成方法
JP6006928B2 (ja) * 2011-11-02 2016-10-12 東京応化工業株式会社 高分子化合物の製造方法
US8795948B2 (en) * 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
JP5783137B2 (ja) 2012-06-15 2015-09-24 信越化学工業株式会社 スルホニウム塩、高分子化合物、レジスト材料及びパターン形成方法
JP5913241B2 (ja) 2012-09-15 2016-04-27 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 複数の酸発生剤化合物を含むフォトレジスト
TWI498675B (zh) * 2012-09-15 2015-09-01 羅門哈斯電子材料有限公司 酸產生劑化合物及含該化合物之光阻劑
US8945814B2 (en) 2012-09-15 2015-02-03 Rohm And Haas Electronic Materials Llc Acid generators and photoresists comprising same
JP5790631B2 (ja) * 2012-12-10 2015-10-07 信越化学工業株式会社 スルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法、並びに該高分子化合物の製造方法
JP6106432B2 (ja) * 2012-12-28 2017-03-29 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物
JP6571912B2 (ja) * 2012-12-31 2019-09-04 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 樹状化合物、フォトレジスト組成物、および電子デバイスを作製する方法
US9164384B2 (en) * 2013-04-26 2015-10-20 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
US10179778B2 (en) * 2013-09-27 2019-01-15 Rohm And Haas Electronic Materials Llc Substituted aryl onium materials
US9581901B2 (en) 2013-12-19 2017-02-28 Rohm And Haas Electronic Materials Llc Photoacid-generating copolymer and associated photoresist composition, coated substrate, and method of forming an electronic device
US20150346599A1 (en) * 2014-05-29 2015-12-03 Rohm And Haas Electronic Materials Llc Photo-destroyable quencher and associated photoresist composition, and device-forming method
US10345700B2 (en) * 2014-09-08 2019-07-09 International Business Machines Corporation Negative-tone resist compositions and multifunctional polymers therein
US9551930B2 (en) * 2014-10-10 2017-01-24 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
US9557642B2 (en) * 2014-10-10 2017-01-31 Rohm And Haas Electronic Materials Llc Photoresist composition and associated method of forming an electronic device
US9527936B2 (en) * 2014-10-10 2016-12-27 Rohm And Haas Electronic Materials Llc Polymer comprising repeat units with photoacid-generating functionality and base-solubility-enhancing functionality, and associated photoresist composition and electronic device forming method

Also Published As

Publication number Publication date
TWI589596B (zh) 2017-07-01
CN105504118A (zh) 2016-04-20
TW201613985A (en) 2016-04-16
US20160102158A1 (en) 2016-04-14
JP2016104849A (ja) 2016-06-09
US9606434B2 (en) 2017-03-28
KR20160042776A (ko) 2016-04-20
CN105504118B (zh) 2019-04-30
KR101786641B1 (ko) 2017-10-19

Similar Documents

Publication Publication Date Title
JP6111306B2 (ja) 光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法
JP6286404B2 (ja) フォトレジスト組成物及び電子デバイスを形成する関連方法
JP6280529B2 (ja) フォトレジスト組成物及び電子デバイスを形成する関連方法
JP6220370B2 (ja) 光酸発生官能基及び塩基溶解度向上官能基を有する繰り返し単位を含むポリマー、関連フォトレジスト組成物、ならびに電子デバイスを形成する方法
JP5957499B2 (ja) 高分子化合物
TWI649616B (zh) 化學增幅正型光阻組成物及光阻圖案形成方法
TWI567052B (zh) 新穎鎓鹽化合物及光阻組成物與圖案形成方法
CN103534648B (zh) 正型抗蚀剂组合物和使用该组合物的抗蚀剂膜、涂有抗蚀剂的掩模坯、抗蚀剂图案形成方法和光掩模
TW201910311A (zh) 鋶鹽、聚合物、光阻組成物及圖案形成方法
JP2016108508A (ja) ポリマー、レジスト材料、及びパターン形成方法
CN102796223A (zh) 聚合物组合物以及包含所述聚合物的光刻胶
JP2000056459A (ja) レジスト組成物
JP4578971B2 (ja) フォトレジストとして有用なフッ素化ポリマーおよび微細平版印刷のための方法
KR101444111B1 (ko) 신규 아크릴계 단량체, 중합체 및 이를 포함하는 레지스트 조성물

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160928

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161007

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170110

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20170110

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170223

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170313

R150 Certificate of patent or registration of utility model

Ref document number: 6111306

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250