JP6090154B2 - スライス方法 - Google Patents

スライス方法 Download PDF

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Publication number
JP6090154B2
JP6090154B2 JP2013269043A JP2013269043A JP6090154B2 JP 6090154 B2 JP6090154 B2 JP 6090154B2 JP 2013269043 A JP2013269043 A JP 2013269043A JP 2013269043 A JP2013269043 A JP 2013269043A JP 6090154 B2 JP6090154 B2 JP 6090154B2
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JP
Japan
Prior art keywords
wire
coolant
copper
concentration
wafer
Prior art date
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Active
Application number
JP2013269043A
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English (en)
Japanese (ja)
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JP2015126069A (ja
Inventor
幸司 北川
幸司 北川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2013269043A priority Critical patent/JP6090154B2/ja
Priority to KR1020167016404A priority patent/KR102109894B1/ko
Priority to PCT/JP2014/005983 priority patent/WO2015097989A1/ja
Priority to DE112014005468.2T priority patent/DE112014005468B4/de
Priority to CN201480070306.2A priority patent/CN105849872B/zh
Priority to TW103143685A priority patent/TWI583487B/zh
Publication of JP2015126069A publication Critical patent/JP2015126069A/ja
Application granted granted Critical
Publication of JP6090154B2 publication Critical patent/JP6090154B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0633—Grinders for cutting-off using a cutting wire
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP2013269043A 2013-12-26 2013-12-26 スライス方法 Active JP6090154B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2013269043A JP6090154B2 (ja) 2013-12-26 2013-12-26 スライス方法
KR1020167016404A KR102109894B1 (ko) 2013-12-26 2014-12-01 슬라이스 방법
PCT/JP2014/005983 WO2015097989A1 (ja) 2013-12-26 2014-12-01 スライス方法
DE112014005468.2T DE112014005468B4 (de) 2013-12-26 2014-12-01 Schneidverfahren
CN201480070306.2A CN105849872B (zh) 2013-12-26 2014-12-01 切片方法
TW103143685A TWI583487B (zh) 2013-12-26 2014-12-15 Slicing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013269043A JP6090154B2 (ja) 2013-12-26 2013-12-26 スライス方法

Publications (2)

Publication Number Publication Date
JP2015126069A JP2015126069A (ja) 2015-07-06
JP6090154B2 true JP6090154B2 (ja) 2017-03-08

Family

ID=53477901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013269043A Active JP6090154B2 (ja) 2013-12-26 2013-12-26 スライス方法

Country Status (6)

Country Link
JP (1) JP6090154B2 (zh)
KR (1) KR102109894B1 (zh)
CN (1) CN105849872B (zh)
DE (1) DE112014005468B4 (zh)
TW (1) TWI583487B (zh)
WO (1) WO2015097989A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112829096A (zh) * 2020-12-30 2021-05-25 镇江耐丝新型材料有限公司 一种表面无黄铜镀层的切割钢丝及其制备方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW311108B (en) * 1996-02-02 1997-07-21 Nippei Toyama Corp The slurry managing system and method for wire saws
JP3244426B2 (ja) 1996-03-26 2002-01-07 信越半導体株式会社 ワイヤソー用ワイヤの製造方法及びワイヤソー用ワイヤ
JP3219142B2 (ja) * 1997-12-17 2001-10-15 信越半導体株式会社 半導体シリコンウエーハ研磨用研磨剤及び研磨方法
US6884721B2 (en) * 1997-12-25 2005-04-26 Shin-Etsu Handotai Co., Ltd. Silicon wafer storage water and silicon wafer storage method
JP3255103B2 (ja) * 1997-12-25 2002-02-12 信越半導体株式会社 シリコンウエーハの保管用水及び保管する方法
JP2002270568A (ja) * 2001-03-12 2002-09-20 Mimasu Semiconductor Industry Co Ltd 半導体ウエーハの製造方法および金属モニタリング装置
JP3768891B2 (ja) * 2002-01-31 2006-04-19 三益半導体工業株式会社 廃スラッジの再利用システム
JP2004075859A (ja) * 2002-08-19 2004-03-11 Chubu Kiresuto Kk 研磨スラリーの清浄化法
JP2005057054A (ja) 2003-08-04 2005-03-03 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハおよびその製造方法
US20090211167A1 (en) * 2008-02-21 2009-08-27 Sumco Corporation Slurry for wire saw
JP2010040935A (ja) * 2008-08-07 2010-02-18 Sumco Corp エピタキシャルシリコンウェーハおよびその製造方法
EP2662432A1 (en) * 2008-12-31 2013-11-13 MEMC Singapore Pte. Ltd. Methods to recover and purify silicon particles from saw kerf
JP2011005561A (ja) * 2009-06-23 2011-01-13 Shin Etsu Handotai Co Ltd シリコンインゴットの切断方法および切断システム
JP2011016185A (ja) * 2009-07-08 2011-01-27 Sumco Corp スラリー流通経路の洗浄液およびその洗浄方法
JP5515593B2 (ja) * 2009-10-07 2014-06-11 株式会社Ｓｕｍｃｏ ワイヤーソーによるシリコンインゴットの切断方法およびワイヤーソー
WO2011105255A1 (ja) * 2010-02-26 2011-09-01 株式会社Sumco 半導体ウェーハの製造方法
JP5656132B2 (ja) * 2010-04-30 2015-01-21 株式会社Sumco シリコンウェーハの研磨方法
JP5495981B2 (ja) * 2010-06-29 2014-05-21 京セラ株式会社 半導体基板の製造方法
JP2012024866A (ja) * 2010-07-21 2012-02-09 Sumco Corp ワイヤソー切断スラッジの回収方法およびその装置
JP2013146802A (ja) * 2012-01-17 2013-08-01 Panasonic Corp シリコン加工粉不純物除去装置及び方法

Also Published As

Publication number Publication date
JP2015126069A (ja) 2015-07-06
DE112014005468B4 (de) 2023-03-23
WO2015097989A1 (ja) 2015-07-02
CN105849872B (zh) 2019-04-19
TW201531376A (zh) 2015-08-16
CN105849872A (zh) 2016-08-10
TWI583487B (zh) 2017-05-21
KR20160101927A (ko) 2016-08-26
DE112014005468T5 (de) 2016-08-18
KR102109894B1 (ko) 2020-05-12

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