JP6072708B2 - デバイス - Google Patents
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- JP6072708B2 JP6072708B2 JP2014022192A JP2014022192A JP6072708B2 JP 6072708 B2 JP6072708 B2 JP 6072708B2 JP 2014022192 A JP2014022192 A JP 2014022192A JP 2014022192 A JP2014022192 A JP 2014022192A JP 6072708 B2 JP6072708 B2 JP 6072708B2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 116
- 229910002601 GaN Inorganic materials 0.000 claims description 110
- 230000004888 barrier function Effects 0.000 claims description 44
- 239000012212 insulator Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 27
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 14
- 239000011777 magnesium Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 238000005121 nitriding Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 177
- 238000000034 method Methods 0.000 description 28
- 230000010287 polarization Effects 0.000 description 28
- 238000010586 diagram Methods 0.000 description 26
- 230000008901 benefit Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 230000001965 increasing effect Effects 0.000 description 11
- 230000009977 dual effect Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 108091006149 Electron carriers Proteins 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- -1 magnesium nitride compound Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
を含む方法を開示する。方法のステップはプロセッサによって実行される。
Claims (10)
- デバイスであって、
電子電荷を送り出すソースと、
前記電子電荷を受け取るドレインと、
前記ソースと前記ドレインとの間の伝導経路の少なくとも一部を与える第1のスタックであって、前記第1のスタックは第1の極性の第1の1組の層を含み、前記第1の1組は前記第1の極性の第1の窒化ガリウム層を含む、第1のスタックと、
前記ソースと前記ドレインとの間の前記伝導経路の少なくとも一部を与える第2のスタックであって、前記第2のスタックは第2の極性の第2の1組の層を含み、前記第2の1組は前記第2の極性の第2の窒化ガリウム層を含み、前記第1の極性は前記第2の極性とは異なる、第2のスタックと、
前記第1のスタックと前記第2のスタックとの間に堆積される中間層と、
前記デバイスの動作中に、前記伝導経路が前記第1の窒化ガリウム層内に形成される第1の2次元電子ガスチャネルと、前記第2の窒化ガリウム層内に形成される第2の2次元電子ガスチャネルとを含むように、前記電子電荷の伝導を制御する、少なくとも前記第1のスタックに動作可能に接続される少なくとも1つのゲートと、
を備える、デバイス。 - 前記中間層は、窒化アルミニウム/酸化アルミニウム絶縁体を含む、
請求項1に記載のデバイス。 - 前記中間層は、ドーピング層を含む、
請求項1に記載のデバイス。 - 前記ドーピング層は、マグネシウム+窒化処理によって形成される、
請求項3に記載のデバイス。 - 前記少なくとも1つのゲートは、前記第1のスタックに電気的に接続される第1のゲートと、前記第2のスタックに電気的に接続される第2のゲートとを含む、
請求項1に記載のデバイス。 - 前記第1のスタックは、N極性障壁層と、N極性窒化ガリウム層と、N極性バッファ層とを含み、
前記第2のスタックは、Ga極性障壁層と、Ga極性窒化ガリウム層と、Ga極性バッファ層とを含む、
請求項1に記載のデバイス。 - 前記第1のスタックは、Ga極性バッファ層と、前記Ga極性バッファ層上に堆積される第1のGa極性障壁層と、前記第1のGa極性障壁層上に堆積されるGa極性窒化ガリウム層と、前記Ga極性窒化ガリウム層上に堆積される第2のGa極性障壁層と、前記第2のGa極性障壁層上に堆積される第1の絶縁体層とを含み、
前記第2のスタックは、第2の絶縁体層と、前記第2の絶縁体層上に堆積される第1のN極性障壁層と、前記第1のN極性障壁層上に堆積されるN極性窒化ガリウム層と、前記N極性窒化ガリウム層上に堆積される第2のN極性障壁層と、前記第2のN極性障壁層上に堆積されるN極性窒化ガリウムバッファとを含み、
前記少なくとも1つのゲートは、前記第1のスタックに電気的に接続される第1のゲートと、前記第2のスタックに電気的に接続される第2のゲートとを含み、
前記第1のスタックの前記第1の絶縁体層は、前記第1のゲートに近接して配置され、
前記第2のスタックの前記第2の絶縁体層は、前記第2のゲートに近接して配置される、
請求項1に記載のデバイス。 - 前記第1の絶縁体層の厚み及び前記第2の絶縁体層の厚みは、前記デバイスの動作中に、前記伝導経路が前記Ga極性層内に形成される第1の反転キャリアチャネルと、前記N極性層内に形成される第2の反転キャリアチャネルとを含むように選択される、
請求項7に記載のデバイス。 - 前記第1の絶縁体層の厚み及び前記第2の絶縁体層の厚みは、前記第1の絶縁体層及び前記第2の絶縁体層の材料の誘電率に比例する、
請求項7に記載のデバイス。 - 前記第1の絶縁体層又は前記第2の絶縁体層の厚みは、前記第1の2次元電子ガスチャネル又は前記第2の2次元電子ガスチャネルを作り出すのに十分な最小電圧が第1の反転キャリアチャネル又は第2の反転キャリアチャネルを作り出すのにも十分であるように選択される、
請求項7に記載のデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/833,864 US8907378B2 (en) | 2013-03-15 | 2013-03-15 | High electron mobility transistor with multiple channels |
US13/833,864 | 2013-03-15 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014183311A JP2014183311A (ja) | 2014-09-29 |
JP2014183311A5 JP2014183311A5 (ja) | 2016-11-24 |
JP6072708B2 true JP6072708B2 (ja) | 2017-02-01 |
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JP2014022192A Active JP6072708B2 (ja) | 2013-03-15 | 2014-02-07 | デバイス |
Country Status (3)
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US (1) | US8907378B2 (ja) |
JP (1) | JP6072708B2 (ja) |
CN (1) | CN104051519B (ja) |
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US8907378B2 (en) | 2014-12-09 |
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