JP6057926B2 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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JP6057926B2
JP6057926B2 JP2014002130A JP2014002130A JP6057926B2 JP 6057926 B2 JP6057926 B2 JP 6057926B2 JP 2014002130 A JP2014002130 A JP 2014002130A JP 2014002130 A JP2014002130 A JP 2014002130A JP 6057926 B2 JP6057926 B2 JP 6057926B2
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semiconductor device
material
sealing resin
semiconductor element
semiconductor
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JP2015130456A (en
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万里子 ▲高▼原
万里子 ▲高▼原
和弘 多田
和弘 多田
範之 別芝
範之 別芝
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三菱電機株式会社
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    • H01L24/39Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/371Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147Copper [Cu] as principal constituent
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    • H01L2924/1304Transistor
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Description

  The present invention relates to a semiconductor device mounted with a power semiconductor element, and more particularly to a mounting structure of a semiconductor device that operates at a high temperature with a large capacity.

  In a conventional case type semiconductor device, the periphery of a semiconductor element in a case is generally sealed with silicone gel. On the other hand, epoxy sealing has high heat cycle and power cycle reliability because the periphery of the chip is constrained by a hard resin. However, since the epoxy resin is hard, the stress generated at the interface is high, and the problem of peeling or cracking occurs, so the structure is very limited.

  In the semiconductor device described in Patent Document 1, the electrical connection between the semiconductor element and the outside is provided in the main terminal for connection to the main electrode of the semiconductor element, and in the control electrode of the semiconductor element and inside the semiconductor device. An insert case through a case material is used as a signal terminal for connection to sensors. When producing this insert case, it is produced by injecting a molten thermoplastic resin having a high temperature into a mold in which a terminal is set and cooling it. Since the main terminal needs to pass a large current, copper having a small volume resistance is generally used. However, a case material used for a power semiconductor device is made of a material having high heat resistance, and is molded by injecting a high-temperature resin at around 300 ° C. into a mold. Since copper is easily oxidized at a high temperature, the surface is oxidized when molding is performed at such a high temperature. Therefore, a nickel plated copper material is often used.

  In addition, in the semiconductor device described in Patent Document 2, the portion of the semiconductor element substrate to which the semiconductor element is bonded is exposed by a stress relaxation adhesive layer having a smaller elastic modulus than the sealing resin that covers the semiconductor element. By covering, peeling of the sealing resin is suppressed. Similarly to Patent Document 1, electrical connection between the semiconductor element and the outside is performed through terminals provided on the case for both the main terminal and the signal terminal.

JP 2008-258547 A International Publication WO2012 / 070261

  However, when sealing with an epoxy resin, there exists a problem that an epoxy resin has low adhesiveness with respect to the copper material which gave nickel plating. If the adhesiveness is low, peeling is likely to occur during the heat cycle, and peeling has a problem in shortening the life of the wire bond connecting portion.

  The present invention has been made to solve the above problems, and an object of the present invention is to obtain a device having high heat cycle reliability in a semiconductor device having a structure in which the inside of a case is covered with a sealing resin.

The present invention provides a semiconductor element substrate having a surface electrode on one surface of an insulating substrate and a back electrode on the other surface of the insulating substrate, and a bonding material on a surface of the surface electrode opposite to the insulating substrate. A first main terminal bonded to the surface electrode, a second main terminal bonded to the surface opposite to the surface electrode of the semiconductor element, and at least the semiconductor element inside In a semiconductor device comprising: a case in which signal terminals for inputting and outputting electrical signals are integrally molded; and a sealing resin that seals the inside of the case so as to cover at least the semiconductor element. The first main terminal and the second main terminal pass through the sealing resin and are exposed to the outside of the sealing resin, and the material of the signal terminal is different from the material of the first main terminal and the second main terminal. It is a thing.

  According to the present invention, the main terminal is not provided in the case, and the material of the signal terminal is different from the material of the main terminal. Therefore, the selection range of the material of the signal terminal is expanded, and the adhesiveness with the sealing resin is high. It is possible to select a material that can suppress the separation of the interface between the signal terminal and the sealing resin, which is a wire bond connecting part that dominates the heat cycle life. Therefore, a semiconductor device with high heat cycle reliability can be obtained.

1 is a side sectional view showing a configuration of a semiconductor device according to a first embodiment of the present invention. 1 is a top view of a semiconductor element substrate of a semiconductor device according to a first embodiment of the present invention. It is a top view of the state which removed the sealing resin of the semiconductor device by Embodiment 1 of this invention. It is side surface sectional drawing which shows the structure of the semiconductor device by Embodiment 2 of this invention. It is side surface sectional drawing which shows the structure of the semiconductor device by Embodiment 3 of this invention. It is side surface sectional drawing which shows the structure of the semiconductor device by Embodiment 4 of this invention. It is side surface sectional drawing which shows the structure of the semiconductor device by Embodiment 5 of this invention. It is a figure which shows the table | surface of the heat cycle test result by the Example of the semiconductor device of this invention.

Embodiment 1 FIG.
FIG. 1 is a side sectional view showing a configuration of a semiconductor device according to the first embodiment of the present invention. In FIG. 1, a single surface electrode 3b having no pattern is formed on one surface of an insulating substrate 3a such as ceramic, and a single back electrode 3c also having no pattern is formed on the other surface. Has been. The front electrode 3b and the back electrode 3c are thin plates made of a conductive material such as copper. The insulating substrate 3a on which the front electrode 3b and the back electrode 3c are formed is referred to as a semiconductor element substrate 3 here. The semiconductor elements 1a and 1b are fixed using a conductive bonding material 2 at a predetermined position on the opposite side of the surface electrode 3b of the semiconductor element substrate 3 from the insulating substrate 3a. One main electrode of the element 1b is electrically connected. Here, the semiconductor element 1a is a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal Oxide Semiconductor Field-Effect-Transistor). The semiconductor element 1b is, for example, a free-wheeling diode connected in parallel with the switching element.

A signal terminal 6 for inputting / outputting electric signals such as a gate electrode of the semiconductor element 1a which is a switching element and sensors such as a current sensor or a temperature sensor is integrally formed with the case 4. Electrical connection for signal transmission between the signal terminal 6 and the gate electrode and sensors of the semiconductor element 1 a is performed by a bonding wire 7. The main electrode (the other main electrode) formed on the surface opposite to the bonding surface with the surface electrode 3b of the semiconductor elements 1a and 1b has a conductive metal plate serving as the second main terminal 5b. It is fixed and electrically connected using the bonding material 8. On the other hand, the first main terminal 5a is electrically connected to the surface electrode 3b using a bonding material. The first main terminal 5a and the second main terminal 5b may be collectively referred to as the main terminal 5. The first main terminal 5a and the second main terminal 5b are terminals for allowing a current for power controlled by the semiconductor elements 1a and 1b to flow from the outside to the semiconductor elements 1a and 1b through these terminals.

  Case 4 is being fixed on the peripheral part of surface electrode 3b via the adhesive agent. The inside of the case 4 is sealed with a sealing resin 9 including the semiconductor elements 1 a and 1 b, the bonding wires 7 that are wiring members, and the main terminals 5. However, the first main terminal 5a and the second main terminal 5b of the wiring member penetrate through the sealing resin 9 and are exposed from the sealing resin 9 for electrical connection with the outside. .

  Next, details of each member will be described. The semiconductor elements 1a and 1b may be general elements based on silicone (Si), but the present invention aims at a suitable structure when applied to a semiconductor element operating at a higher temperature. The semiconductor elements 1a and 1b use semiconductor elements of a so-called wide band gap semiconductor material, particularly silicon carbide, which has a wider band gap than silicon carbide (SiC), gallium nitride (GaN) based materials, or silicone such as diamond. The present invention is suitable for semiconductor elements. Although it does not specifically limit as a device kind, Switching elements, such as IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field-Effect-Transistor), or a rectifier element like a diode can be considered.

  For example, when the semiconductor element 1a is a MOSFET, a drain electrode is formed on the surface of the semiconductor element 1a on the surface electrode 3b side. On the surface opposite to the drain electrode (upper side in FIG. 1), a gate electrode and a source electrode are formed in divided regions. Note that a composite metal film is formed on the surface of the drain electrode to improve the bonding with the bonding material. On the surface of the source electrode, a thin electrode film such as aluminum having a thickness of several μm and a thin film layer such as titanium, molybdenum, nickel, and gold are formed.

  Both the front surface electrode 3b and the back surface electrode 3c of the semiconductor element substrate 3 are solid conductive materials on which no pattern is formed. FIG. 2 shows a top view of the semiconductor element substrate 3, that is, a view seen from the surface electrode 3b side. As shown in FIG. 2, no pattern is formed on the surface electrode 3b, and the insulating substrate 3a is not exposed except in the periphery. As the insulating substrate 3a serving as the core material of the semiconductor element substrate 3, a ceramic material such as aluminum nitride, silicon nitride, boron nitride, and aluminum oxide (alumina) having excellent heat conductivity can be used. The front electrode 3b and the back electrode 3c are made of a conductive material such as copper or aluminum or an alloy material containing them as a main component, and are joined to the insulating substrate 3a with a brazing material or the like. A plating film such as nickel may be formed on the surfaces of the front electrode 3b and the back electrode 3c in consideration of oxidation prevention and wettability of the bonding material. By forming the front surface electrode 3b and the back surface electrode 3c symmetrically with respect to the insulating substrate 3a, the warp of the semiconductor element substrate 3 can be suppressed, and mounting of the semiconductor elements 1a and 1b using the bonding material 2 can be performed. It becomes easy.

  FIG. 3 shows a top view of the semiconductor device shown in FIG. 1 with the sealing resin 9 removed. Since the case 4 is formed on the surface electrode 3b, the semiconductor element substrate 3 in the case 4 has no portion where the insulating substrate 3a is exposed. Therefore, when the inside of the case 4 is sealed with the sealing resin 9, there is no portion where the sealing resin 9 contacts the insulating substrate 3a. For this reason, by making the sealing resin 9 have a thermal expansion coefficient close to that of the semiconductor element substrate 3 as a whole, peeling due to heat cycle is less likely to occur. In contrast to the semiconductor device of the present invention, for example, in the semiconductor device of Patent Document 1, a pattern is formed on the surface electrode, and there is a portion where the sealing resin and the ceramic that is the insulating substrate are in direct contact with each other. There was a risk of peeling.

  Further, for example, in a conventional semiconductor device such as Patent Document 1, a terminal for connecting a main electrode through which a large current of a semiconductor element flows and the outside of the semiconductor device is provided in a case, and a pattern is formed between the terminal and the main electrode. It was connected by a bonding wire or the like through the surface electrode on which was formed. On the other hand, in the semiconductor device of FIG. 1, since the pattern is not formed on the surface electrode 3b, a terminal for connecting the main electrode through which a large current of the semiconductor element 1a or 1b flows and the outside of the semiconductor device is used as the pattern of the surface electrode. The first main terminal 5a is not provided as a terminal provided in the case 4 but directly through the sealing resin 9 from the surface electrode 3b. Further, a terminal for leading out from the other main electrode of the semiconductor element 1a or 1b is not a surface electrode nor a terminal provided in the case 4, and the second terminal is directly pulled out through the sealing resin 9. The main terminal 5b is provided.

  As the bonding material 2 and the bonding material 8, a conductive bonding material having good thermal conductivity, such as solder, a sinter filler or brazing material mainly composed of silver, or a material in which copper is dispersed in tin, is applied. it can. Examples of the material of the bonding wire 7 as the wiring member include aluminum, copper, and gold. The main terminal 5 as the wiring member is made of a highly conductive metal because a large current flows. Of these, copper is the most suitable from the viewpoint of electrical resistance, workability and cost. The copper material may be nickel-plated from the viewpoint of preventing oxidation. However, since nickel plating is inferior in adhesion to the sealing resin 9, it is preferable that the copper material is handled and not plated so as not to be oxidized.

  For example, as described in Patent Document 1 and Patent Document 2, in a semiconductor device having a configuration in which the inside of a case is molded with a sealing resin, conventionally, wiring connected to the main electrode of the semiconductor element is mainly connected to the case. Terminals were provided and connected to the outside. On the other hand, signal terminals have also been conventionally provided in cases. Since a large current flows in the main terminal, it is necessary to use copper having high conductivity. For this reason, it was natural to use copper as the terminal including the signal terminal. In the present invention, the main terminal is not provided in the case, and the main terminal member electrically connected to the main electrode of the surface electrode 3b and the semiconductor elements 1a and 1b directly penetrates the sealing resin 9 and is exposed from the sealing resin 9. I made it. As a result, the terminal to be provided in the case is only the signal terminal, and it is not necessary to consider a large current as the material of the signal terminal, and it is a material different from the main terminal based on oxidation resistance and peeling resistance between the resin and the like. I was able to create a situation where I could choose.

  As described above, the signal terminal 6 as the wiring member does not flow a large current unlike the main terminal 5. On the other hand, since the signal terminal 6 is integrally formed with the case 4, it is necessary that the surface state does not change at a high temperature of about 300 ° C. when the case 4 is formed. Therefore, when a copper material is used, the surface is strongly oxidized at a high temperature of 300 ° C., and it is necessary to perform nickel plating on the surface as an oxidation prevention. However, the compatibility between the nickel plating and the epoxy resin is poor, and there is a problem that peeling occurs during the heat cycle and the peeling progresses to the bonding portion of the bonding wire 7 to cause the bonding wire 7 to be cut, thereby shortening the module life. . Therefore, a material other than copper that does not oxidize even at a high temperature of 300 ° C., specifically, an alloy containing iron and nickel such as an iron nickel alloy or iron nickel cobalt alloy is used. Examples of the iron-nickel alloy include a 42 alloy having a nickel content of 42% by weight and a material having a nickel content of 50% by weight. An example of the iron-nickel-cobalt alloy is Kovar of nickel 29% by weight cobalt 16%. Among them, 42 alloy having a nickel content of 42% by weight as an iron-nickel alloy is used as a lead frame material for ICs and has high adhesive strength with the sealing resin 9, and is therefore suitable as a material for the signal terminal 6 of the present invention. It is.

  The case 4 is formed integrally with the signal terminal 6 and is provided to prevent resin leakage when the sealing resin 9 is injected. The material of the case 4 may be a resin material having a melting point equal to or higher than at least the curing temperature of the sealing resin 9 and the temperature of the semiconductor device when the semiconductor elements 1a and 1b operate. Examples of materials that satisfy this condition include poly p-phenylene sulfide resin (PPS), polybutylene terephthalate resin (PBT), nylon resin, and liquid crystal polymer (LCP) that are often used as a case.

  The material of the sealing resin 9 is a mixture of ceramic particles such as fused silica or fillers such as fused silica in a thermosetting resin such as epoxy that shows liquid properties at room temperature, and has a coefficient of thermal expansion and an elastic modulus after curing. Adjusted material. At the time of injection, it can be injected in a temperature range in which a curing reaction does not occur with heating to improve fluidity. By setting the thermal expansion coefficient after curing of the sealing resin 9 to a thermal expansion coefficient close to the thermal expansion coefficient of the semiconductor element substrate 3, the stress generated at the interface can be reduced, and interface peeling and resin breakage can be prevented. Reliability can be improved. The thermal expansion coefficients of the insulating substrate 3a are 4.5 ppm / K for aluminum nitride, 3 ppm / K for silicon nitride, and 7.3 ppm / K for aluminum oxide. The thermal expansion coefficients of the front electrode 3b and the back electrode 3c are copper. Is 17 ppm / K, and aluminum is 24 ppm / K. Therefore, although depending on the thickness configuration of the insulating substrate 3a, the front electrode 3b, and the back electrode 3c, the thermal expansion coefficient of the semiconductor element substrate 3 as a whole in which the front electrode 3b and the back electrode 3c are joined to the insulating substrate 3a is 7 to 15 ppm / K. Therefore, it is desirable that the thermal expansion coefficient below the glass transition temperature of the sealing resin 9 is also 7 to 15 ppm / K.

  As described above, in the semiconductor device according to the first embodiment of the present invention, the main terminal provided in the case 4 does not provide the case with the material of the signal terminal 6 that transmits only an electric signal and does not need to pass a large current. The material other than copper, which is material No. 5, was used. In particular, if the material of the signal terminal 6 is an alloy containing iron and nickel, such as iron-nickel alloy or iron-nickel-cobalt alloy, it becomes possible to achieve both adhesion with the case material and the sealing resin. And the case material and the sealing resin can be prevented, and a highly reliable semiconductor device with high heat cycle resistance and power cycle resistance can be obtained. Further, since no pattern is formed on the surface electrode 3 b and there is no portion where the sealing resin 9 and the insulating substrate 3 a of the semiconductor element substrate 3 are in direct contact with each other, the sealing resin 9 is difficult to peel off from the semiconductor element substrate 3. Further, the first main terminal 5a electrically connected to the surface electrode 3b is exposed outside the sealing resin 9 through the sealing resin 9 without forming a pattern on the surface electrode 3b. did. The second main terminal 5b electrically connected to the main electrode for flowing the main current formed on the side opposite to the side bonded to the surface electrode 3b of the semiconductor elements 1a and 1b is also encapsulating resin 9 And exposed to the outside of the sealing resin 9. Conventionally, the main terminal is integrally formed with the case. However, in the semiconductor device according to the first embodiment of the present invention, the main terminal is not provided in the case but directly exposed from the sealing resin 9. There is an advantage that the degree of freedom is increased and it is not necessary to consider the oxidation of the main terminal due to the high temperature at the time of molding the case.

Embodiment 2. FIG.
FIG. 4 shows the configuration of the semiconductor device according to the second embodiment of the present invention. The configuration of the semiconductor device shown in FIG. 4 is substantially the same as that of the semiconductor device of FIG. 1, but a pattern is formed on the surface electrode 31b, and the main electrodes on the upper surfaces of the semiconductor elements 1a and 1b are connected via bonding wires 70. The second main terminal 5c is electrically connected to the pattern 32 formed on the surface electrode 31b to which the second main terminal 5c is fixed. The other configuration is the same as the configuration of FIG.

  Also in the semiconductor device having the configuration shown in FIG. 4, as in the first embodiment, the main terminal 5 is not provided in the case 4, but the first main terminal 5a and the second main terminal 5c that are directly drawn through the sealing resin 9 are provided. As provided. On the other hand, the signal terminal 6 is formed integrally with the case 4, and the electrical connection between the gate electrode and sensors of the semiconductor element 1 a and the signal terminal 6 is performed by a bonding wire 7. Also in this configuration, as in the first embodiment, the signal terminal 6 is not the same copper as the main terminal 5 but is made of a material other than copper, specifically an alloy containing iron and nickel. It is possible to achieve both the adhesion with each other, prevent peeling between the signal terminal 6 and the case material and the sealing resin, and to obtain a highly reliable semiconductor device having high heat cycle resistance and power cycle resistance. be able to.

Embodiment 3 FIG.
FIG. 5 is a side cross-sectional view showing the configuration of the semiconductor device according to the third embodiment of the present invention. The semiconductor device according to the third embodiment uses the semiconductor device shown in FIG. Are arranged on one surface of the plurality of heat radiating plates 10. The inside of the second case 12 provided in the peripheral portion of the heat radiating plate 10 is sealed with the second sealing resin 13. In addition, the main terminal 5 penetrating the sealing resin 9 and taken out of the sealing resin 9 is also exposed to the outside of the second sealing resin 13 through the second sealing resin 13. It has become. In FIG. 5, the semiconductor device shown in FIG. 1 is shown as an internal module arranged on one surface of a plurality of heat dissipation plates. However, the semiconductor device shown in FIG. It may be arranged on one side.

  In FIG. 5, the metal heat sink 10 is made of a metal material having good thermal conductivity, for example, a copper plate. It suffices if copper is a main component, and a metal other than copper may be contained. Also, aluminum or an alloy thereof having light weight and high thermal conductivity may be used. The heat sink 10 is bonded to the back electrode 3 c of the semiconductor element substrate 3 through the bonding material 11. The bonding material 11 between the heat radiating plate 10 and the back surface electrode 3c is similar to the bonding material between the semiconductor element 1 and the front surface electrode 3b, such as solder having good thermal conductivity, for example, a sinterable filler or brazing material containing silver as a main component. Can also be used. Furthermore, an insulating adhesive having good thermal conductivity may be used.

  The second case 12 is fixed to the heat sink 10 with an adhesive or the like. The second case 12 is provided to prevent resin leakage when the second sealing resin 13 before curing is injected. As the material of the second case 12, the same material as that described in the case 4 in the first embodiment can be used. The second sealing resin 13 may be any resin that exhibits fluidity at room temperature before curing, but seals the entire large module and prevents the generated stress from increasing after curing from the sealing resin 9. Also, a silicone or urethane soft resin having a low elastic modulus is preferable.

  The insulation of the creeping surface of the semiconductor element substrate 3 is ensured by the soft second sealing resin 13. If it is covered with an epoxy-based sealing resin, the semiconductor element substrate and the heat sink 10 made of copper or aluminum have different coefficients of thermal expansion. Causes problems such as resin cracks. Therefore, the stress is reduced by the elastic modulus smaller than that of the sealing resin, that is, the soft second sealing resin 13.

  The operation of the above semiconductor device will be described. When the semiconductor device is driven, current flows through various elements in the semiconductor device including the semiconductor elements 1a and 1b. At that time, electric resistance components and power loss due to switching are converted into heat and heat is generated. At this time, when a semiconductor element made of a semiconductor material capable of high-temperature operation such as SiC is used as the semiconductor elements 1a and 1b, the current is large and the temperature around the semiconductor elements 1a and 1b during operation reaches 300 ° C. As the temperature around the semiconductor element rises, the temperature of the entire semiconductor device also rises. If the portion where the signal terminal 6 and the bonding wire 7 are connected is peeled off due to this temperature rise, the electrical signal is interrupted and the semiconductor device does not function. However, in the semiconductor device according to the present invention, the signal terminal 6 is made of a material different from copper, which is the material of the main terminal 5, specifically, a material containing iron and nickel. It is possible to achieve both the adhesiveness. In particular, peeling at a portion where the signal terminal 6 and the bonding wire 7 are connected and in contact with the sealing resin 9 is suppressed. In addition, the circuit surface side of the semiconductor element substrate including the semiconductor elements 1a and 1b and circuit members such as bonding wires 7 and main terminals 5 as wiring members is restrained by an epoxy-based sealing resin 9, and the sealing resin Since the thermal expansion coefficient of 9 is adjusted to be close to the thermal expansion coefficient of the semiconductor element substrate, generation of thermal stress on the semiconductor element substrate and the circuit member can be suppressed. Therefore, it is possible to obtain a highly reliable semiconductor device having excellent heat dissipation characteristics.

Embodiment 4 FIG.
FIG. 6 is a side sectional view showing the configuration of the semiconductor device according to the fourth embodiment of the present invention. In the semiconductor device according to the fourth embodiment, the case 4 formed integrally with the signal terminal 6 using an alloy containing iron and nickel such as 42 alloy is joined to the heat sink 10 via an adhesive. The heat sink 10 is bonded to the back electrode 3 c of the semiconductor element substrate 3 through the bonding material 11. Further, the inside of the case 4 is sealed with a sealing resin 9. Further, as in the first embodiment, no pattern is formed on the front electrode 3b, and the front electrode 3b and the back electrode 3c are provided symmetrically with respect to the insulating substrate 3a. The first main terminal 5 a connected to the surface electrode 3 b penetrates the sealing resin 9 and is exposed to the outside of the sealing resin 9. Further, the second main terminal 5 b connected to the main electrode on the surface opposite to the surface electrode 3 b of the semiconductor elements 1 a and 1 b also penetrates the sealing resin 9 and is exposed to the outside of the sealing resin 9.

  As in the third embodiment, the heat radiating plate 10 is made of a metal material having good thermal conductivity, for example, a copper plate material. Also, aluminum or an alloy thereof having light weight and high thermal conductivity may be used. However, in the structure of the fourth embodiment, for example, the heat sink has a relatively high thermal expansion coefficient so as not to cause resin cracking during the heat cycle due to the difference in thermal expansion coefficients of the insulating substrate, the sealing resin, the bonding material, and the heat sink. It is preferable to use an aluminum alloy such as Al—SiC (thermal expansion coefficient≈10 to 16 ppm / K) having a small size. As the sealing resin 9, an epoxy resin may be used as in the first embodiment.

  In the semiconductor device of the fourth embodiment, the signal terminal 6 is made of a material different from that of the main terminal 5 which is usually made of copper, in particular, an alloy containing iron and nickel, such as iron-nickel alloy or iron-nickel-cobalt alloy. In addition, it becomes possible to achieve both adhesion with the sealing resin. Therefore, peeling between the signal terminal, the case material, and the sealing resin can be prevented, and a highly reliable semiconductor device with heat cycle characteristics and power cycle characteristics can be obtained.

Embodiment 5. FIG.
FIG. 7 is a side sectional view showing the structure of the semiconductor device according to the fifth embodiment of the present invention. In the semiconductor device according to the fifth embodiment, the surface electrode 33 b and the heat radiating plate 10 are joined via the insulating sheet 14.

  As the insulating sheet 14, for example, a thermosetting resin such as an epoxy resin filled with an inorganic powder filler with good thermal conductivity can be used. The insulating sheet 14 is important for heat dissipation. In order to improve heat dissipation, it is effective to use an inorganic powder filler having high thermal conductivity. For example, a filler having high thermal conductivity such as crystalline silica, alumina, boron nitride, and aluminum nitride can be used.

  In the semiconductor device according to the fifth embodiment, the case 4 is bonded onto the insulating sheet of the metal substrate in which the insulating sheet 14 and the surface electrode 33b are integrated on the heat sink 10, and the semiconductor elements 1a, 1b, The first main terminal 5a and the second main terminal 5b are joined. Thereafter, the inside of the case 4 is sealed with a sealing resin 9. The first main terminal 5 a and the second main terminal 5 b penetrate the sealing resin 9 and are exposed from the sealing resin 9 in order to make an electrical connection with the outside.

  As in the first to fourth embodiments, the semiconductor device according to the fifth embodiment uses an alloy containing iron and nickel, which are different materials from the main terminal 5, for the signal terminal 6. Can be made compatible with each other, separation of the signal terminal from the case material and the sealing resin can be prevented, and a highly reliable semiconductor device having heat cycle characteristics and power cycle characteristics can be obtained.

  Further, since the semiconductor device of the fifth embodiment uses an insulating sheet that is a resin base, the linear expansion coefficient is closer to the sealing resin and the heat radiating plate than the insulating substrate, and the heat cycle is higher than when ceramics are used. Can prevent resin cracking.

Example.
A semiconductor device having the structure of the fourth embodiment shown in FIG. 6 was fabricated and put into a heat cycle reliability test. What used 42 alloy as an example of the material of the present invention for the signal terminal 6 and what plated nickel to copper as a comparative example, and used copper, aluminum, and Al-SiC as a material of the heat sink 10 Was prepared as a test target.

  First, a specific configuration of the semiconductor device will be described. A semiconductor element substrate 3 is formed by forming a solid copper surface electrode 3b and a back electrode 3c having a thickness of 0.5 mm on the surface of an insulating substrate 3a (40 mm × 20 mm, thickness 0.32 mm) made of silicon nitride. As the semiconductor element 1, an IGBT chip having a size of 15 mm × 15 mm and a thickness of 0.25 mm and a diode chip having a size of 15 mm × 10 mm and a thickness of 0.25 mm are bonded to the semiconductor element substrate 3 using a solder bonding material 2. The first main terminal 5a and the second main terminal 5b made of copper (no nickel plating) are also bonded using a solder bonding material.

  As a comparative example, a signal terminal 6 in which copper is nickel-plated is used, and as an embodiment of the present invention, a PPS case 4 in which a signal terminal 6 made of 42 alloy is integrally molded is formed using a silicone adhesive. Bonded on the surface electrode 3 b of the substrate 3. Next, electrical wiring is performed with bonding wires 7 made of aluminum having a diameter of 0.15 mm.

  Thereafter, the semiconductor element substrate 3 is bonded to a predetermined position of the heat sink 10 using the solder bonding material 11. Next, an epoxy-based sealing resin 9 that is liquid at room temperature is injected into the case 4. The sealing resin 9 is cured.

  This semiconductor device is put into a heat cycle reliability test at −40 ° C. to 125 ° C. (held for 30 minutes each), taken out every 500 cycles, damaged in appearance, the operation of the semiconductor elements 1a and 1b, the semiconductor element substrate 3 An insulation test (2.5 kV, 1 minute application) was carried out to confirm whether there was any problem.

  As described above, a signal terminal 6 using 42 alloy as an example of the material of the present invention, a comparative example of copper plated with nickel, and a material of the heat sink 10 include copper, aluminum, A material using Al-SiC was produced. In FIG. 8, the result of the heat cycle reliability test for every 500 cycles is shown. The use of 42 alloy as the signal terminal 6 provides better reliability results than that using copper. When 1500 cycles is used as the target of the reliability test, all the signals using 42 alloy as the signal terminal 6 satisfy the target regardless of the type of the heat sink. Other alloys including iron and nickel are also superior to copper because they exhibit similar properties to 42 alloys in oxidation resistance due to high temperatures during case molding and adhesion to the case material and sealing resin. It is thought that it shows the characteristic.

  In the present invention, it is possible to freely combine the respective embodiments within the scope of the invention, to appropriately modify the respective embodiments, or to omit the constituent elements thereof.

1a, 1b Semiconductor element, 2, bonding material, 3 semiconductor element substrate, 3a insulating substrate, 3b surface electrode, 3c back electrode, 4 case, 5 main terminal, 5a first main terminal, 5b second main terminal, 6 Signal terminal, 8 bonding material, 9 sealing resin, 10 heat sink, 11 bonding material, 12 second case, 13 second sealing resin

Claims (6)

  1. A semiconductor element substrate in which a surface electrode is formed on one surface of the insulating substrate and a back electrode is formed on the other surface of the insulating substrate;
    A semiconductor element fixed to a surface of the surface electrode opposite to the insulating substrate via a bonding material;
    A first main terminal bonded to the surface electrode and a second main terminal bonded to a surface of the semiconductor element opposite to the surface electrode;
    A case in which at least the semiconductor element is included inside and a signal terminal for inputting and outputting an electric signal is integrally formed; and
    In a semiconductor device comprising a sealing resin for sealing the inside of the case so as to cover at least the semiconductor element,
    The first main terminal and the second main terminal penetrate through the sealing resin and are exposed to the outside of the sealing resin,
    The semiconductor device is characterized in that the material of the signal terminal is different from the material of the first main terminal and the second main terminal.
  2.   The semiconductor device according to claim 1, wherein a material of the signal terminal is an alloy containing iron and nickel.
  3.   The semiconductor device according to claim 2, wherein a material of the signal terminal is 42 alloy.
  4.   The case is provided in the periphery of the surface electrode, at least the surface electrode inside the case covers the entire insulating substrate, and the surface electrode and the back electrode are formed symmetrically with respect to the insulating substrate. The semiconductor device according to claim 1, wherein the semiconductor device is formed.
  5.   The semiconductor device according to claim 1, wherein the semiconductor element is formed of a wide band gap semiconductor.
  6.   The semiconductor device according to claim 5, wherein the wide band gap semiconductor is a semiconductor of silicon carbide, gallium nitride-based material, or diamond.
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